Bulletin PD-20998 rev. C 08/01 65PQ015 SCHOTTKY RECTIFIER 65 Amps Major Ratings and Characteristics Characteristics Description/Features 65PQ015 Units The 65PQ015 Schottky rectifier module has been optimized for ultra low forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems. IF(AV) Rectangular 65 A VRRM 15 V IFSM @ tp = 5 µs sine 1500 A VF @ 65Apk, TJ=125°C 0,46 V 125°C TJ operation (VR < 5V) Single diode configuration TJ range - 55 to 125 °C Ultra low forward voltage drop waveform TO-247 package Optimized for OR-ing applications Guard ring for enhanced ruggedness and long term reliability High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Case Styles 65PQ015 Base Cathode 2 1 Anode 3 Anode TO-247AC 1 65PQ015 Bulletin PD-20998 rev. C 08/01 Voltage Ratings Part number 65PQ015 VR Max. DC Reverse Voltage (V) @ TJ = 100 °C 15 VR Max. DC Reverse Voltage (V) @ TJ = 125 °C 5 Absolute Maximum Ratings Parameters 60PQ015 Units IF(AV) Max. Average Forward Current IFSM 65 Max. Peak One Cycle Non-Repetitive 1500 Surge Current 400 A A EAS Non-Repetitive Avalanche Energy 9 mJ IAR Repetitive Avalanche Current 2 A Conditions 50% duty cycle @ TC = 83°C, rectangular wave form Following any rated load condition and with 10ms Sine or 6ms Rect. pulse rated VRRM applied 5µs Sine or 3µs Rect. pulse TJ = 25 °C, IAS = 2 Amps, L = 4.5 mH Current decaying linearly to zero in 1 µsec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM 65PQ015 Units Forward Voltage Drop (1) IRM Reverse Leakage Current (1) VF(TO) Threshold Voltage Conditions 0,50 0,71 0,46 V V V @ 65A @ 130A @ 65A 0,76 V @ 130A 18 mA TJ = 25 °C 870 mA TJ = 100 °C TJ = 25 °C TJ = 125 °C VR = rated VR 1.2 A TJ = 125 °C 0,137 mV TJ = TJ max. VR = 5V mΩ rt Forward Slope Resistance 4,9 CT Max. Junction Capacitance 4300 pF VR = 5VDC, (test signal range 100Khz to 1Mhz) 25°C LS Typical Series Inductance 8 nH Measured lead to lead 5mm from package body 10000 V/ µs dv/dt Max. Voltage Rate of Change (Rated VR) (1) Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications Parameters 65PQ015 Units TJ Max. Junction Temperature Range -55 to 125 Tstg Max. Storage Temperature Range Conditions °C -55 to 150 °C RthJC Max. Thermal Resistance Junction to Case 0.8 °C/W DC operation RthCS Typical Thermal Resistance, Case to Heatsink 0.3 °C/W Mounting surface , smooth and greased 6 (0.21) g (oz.) wt Approximate Weight T MountingTorque Case Style 2 Min. 6 (5) Max. 12 (10) Kg-cm Non-lubricated threads (Ibf-in) TO-247AC(TO-3P) JEDEC www.irf.com 65PQ015 Bulletin PD-20998 rev. C 08/01 1000 10 0 0 Reve rse C urren t - I R (m A ) 100 75 C 100 50 C 10 25 C 1 0 2 4 6 8 10 12 14 16 Reverse V olta ge - VR (V ) Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage T = 12 5 C 1 0 00 0 J T = 10 0 C (p F) J 10 T = 25 C T J = 25 C T J J unction C ap a citan ce - C In st a nt an e ous Fo rw a rd C urre nt - I F (A) T J = 100 C 10 0 0 1 0 0 .5 1 1 .5 Forw a rd V olta g e D ro p - V (V ) 2 2 4 6 8 10 12 14 16 Reverse V olta ge - VR (V ) FM Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Therm al Im pedance Z thJC ( C /W ) 1 D D D D D = = = = = 0 .75 0 .50 0 .33 0 .25 0 .2 0 PD M 0 .1 t1 Notes: Sin g le P u lse (Th erm a l R esista nc e) 0.0 1 0 .0 000 1 0.00 0 1 0.00 1 0 .01 t2 1. D uty factor D = t 1/ t 2 2. Peak TJ = PD M x Z thJC+ T C 0 .1 1 10 1 00 t 1 , R ec ta n g ula r Pu lse Du ra tio n (Seco n d s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics www.irf.com 3 65PQ015 Bulletin PD-20998 rev. C 08/01 80 A ve ra ge P ow er Loss - (W atts) A llo wab le C ase Tem p eratur e - ( C ) 150 120 DC 90 Sq ua re w ave (D = 0.50) 5 V a pp lied 60 30 D D D D D 60 = = = = = 0.20 0.25 0.33 0.50 0.75 40 RM S Lim it DC 20 se e no te (2) 0 0 0 20 40 60 80 10 0 0 Averag e Forw a rd C urrent - I F(AV ) (A ) 20 40 60 80 1 00 Averag e Forw a rd C urrent - I F (AV ) (A ) Fig. 6 - Forward Power Loss Characteristics Fig. 5 - Maximum Allowable Case Temperature Vs. Average Forward Current N on -Repe titive Surge C urre nt - I FSM (A ) 10000 At An y Rated Load C ond ition An d W ith Rated V RRM Ap plied Follow in g Surg e 1000 100 10 100 1000 10000 Sq uare W ave Pulse D uration - t p (m icrosec) Fig. 7 - Maximum Non-Repetitive Surge Current L IRFP460 D UT Rg = 25 ohm C URRE NT M O N ITO R H IG H-SPE ED SW ITC H FR EE-W H E EL D IO D E + V d = 25 V olt 40H FL40 S02 Fig. 8 - Unclamped Inductive Test Circuit (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 5 V 4 www.irf.com 65PQ015 Bulletin PD-20998 rev. C 08/01 Outline Table 15 .90 (0 .626 ) 3. 65 (0 .14 4) 3. 55 (0 .13 9) DIA. 15 .30 (0 .602 ) 5. 30 (0 .20 9) 4.70 ( 0.185) 2.5 ( 0.098) 1.5 ( 0.059) 5. 70 (0 .22 5) Base Cathode 5.30 ( 0.208) 20 .30 (0 .800 ) 2 19 .70 (0 .775 ) 5.50 ( 0.217) 4. 50 (0 .17 7) 1 2 (2 PLCS.) 3 14. 80 ( 0.583) 14 .20 (0 .559 ) 1 4. 30 (0 .17 0) Anode 3 Anode 3. 70 (0 .14 5) 2. 20 (0 .08 7) 1. 40 (0 .05 6) 1. 00 (0 .03 9) 2. 40 (0 .09 5) MAX. MAX. 0.80 ( 0.032) 0. 40 (0 .21 3) 10. 94 ( 0.430) 10 .86 (0 .427 ) Conform to JEDEC outline TO-247AC (TO-3P) Dimensions in millimeters and (inches) Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 08/01 www.irf.com 5