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APT50N60JCCU2
ISOTOP® Boost chopper
VDSS = 600V
RDSon = 45mΩ max @ Tj = 25°C
ID = 50A @ Tc = 25°C
Super Junction
MOSFET Power Module
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
• Brake switch
K
D
Features
•
G
-
S
D
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
•
•
•
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Absolute maximum ratings
Symbol
VDSS
SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
600
50
38
130
±20
45
290
15
3
1900
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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1-4
APT50N60JCCU2 – Rev 3 October, 2012
G
•
K
S
Ultra low RDSon
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
APT50N60JCCU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Test Conditions
Min
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Typ
Tj = 25°C
Tj = 125°C
VGS = 0V,VDS = 600V
VGS = 10V, ID = 22.5A
VGS = VDS, ID = 3mA
VGS = ±20 V, VDS = 0V
2.1
40
3
Max
250
500
45
3.9
100
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Test Conditions
VGS = 0V ; VDS = 25V
f = 1MHz
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
nF
34
nC
51
30
Tj=25°C
VGS = 10V
VBus = 400V
ID = 44A
RG = 3.3Ω
Turn-off Delay Time
Typ
6.8
0.32
150
VGS = 10V
VBus = 300V
ID = 44A
Rise Time
Eon
Min
20
ns
100
20
Tj=25°C
VGS = 10V ; VBus = 400V
ID = 44A ; RG = 3.3Ω
Tj=125°C
VGS = 10V ; VBus = 400V
ID = 44A ; RG = 3.3Ω
405
µJ
520
660
µJ
635
VGS = 0V, IS = - 44A
IS = - 44A
Tj = 25°C
VR = 400V
Tj = 25°C
diS/dt = 100A/µs
0.9
1.2
V
600
ns
17
µC
SiC chopper diode ratings and characteristics
Test Conditions
IRM
Maximum Reverse Leakage Current
VR=600V
IF(AV)
Maximum Average Forward Current
50% duty cycle
Min
600
Tj = 25°C
Tj = 175°C
Tc = 125°C
Tj = 25°C
Tj = 175°C
Typ
Max
100
200
20
1.6
2
400
2000
VF
Diode Forward Voltage
IF = 20A
QC
Total Capacitive Charge
IF = 20A, VR = 300V
di/dt =800A/µs
28
Q
Total Capacitance
f = 1MHz, VR = 200V
130
f = 1MHz, VR = 400V
100
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Unit
V
µA
A
1.8
2.4
V
nC
pF
2-4
APT50N60JCCU2 – Rev 3 October, 2012
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APT50N60JCCU2
Thermal and package characteristics
Symbol Characteristic
Min
RthJC
Junction to Case Thermal Resistance
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Junction to Ambient (IGBT & Diode)
Typ
CoolMos
SiC Diode
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
2500
-40
Max
0.43
1.4
20
Unit
°C/W
V
150
300
1.5
29.2
°C
N.m
g
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
Cathode
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
Drain
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
38.0 (1.496)
38.2 (1.504)
Source
Gate
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
ISOTOP® is a registered trademark of ST Microelectronics NV
www.microsemi.com
3-4
APT50N60JCCU2 – Rev 3 October, 2012
Dimensions in Millimeters and (Inches)
APT50N60JCCU2
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application in which the failure of the Seller's Product could create a situation where personal injury, death or property
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Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
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expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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4-4
APT50N60JCCU2 – Rev 3 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.