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APT58M50JCU2
ISOTOP® Boost chopper
MOSFET + SiC chopper diode
Power module
VDSS = 500V
RDSon = 65m Max @ Tj = 25°C
ID = 58A @ Tc = 25°C
Application
 AC and DC motor control
 Switched Mode Power Supplies
 Power Factor Correction
 Brake switch
K
D
Features

G
S
G
 SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
K
S
Power MOS 8™ MOSFET
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated



D
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
 Outstanding performance at high frequency
operation
 Stable temperature behavior
 Very rugged
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Easy paralleling due to positive TC of VCEsat
 RoHS Compliant
ISOTOP
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Tc = 25°C
Max ratings
500
58
43
270
±30
65
543
42
Unit
V
A
V
m
W
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-6
APT58M50JCU2 – Rev 1 October, 2012
Symbol
VDSS
APT58M50JCU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Test Conditions
Tj = 25°C
VDS = 500V
VGS = 0V
Tj = 125°C
VGS = 10V, ID = 42A
VGS = VDS, ID = 2.5mA
VGS = ±30 V
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Min
3
Typ
4
Max
250
1000
65
5
±100
Unit
Max
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 42A
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Min
Turn-off Delay Time
Fall Time
pF
340
nC
75
155
60
Resistive switching @ 25°C
VGS = 15V
VBus = 333V
ID = 42A
RG = 2.2
Rise Time
Typ
10800
1164
148
70
ns
155
50
SiC chopper diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
Test Conditions
VR=600V
Min
600
Tj = 25°C
Tj = 175°C
Tc = 100°C
Tj = 25°C
Tj = 175°C
Typ
Max
100
200
20
1.6
2
400
2000
IF
DC Forward Current
VF
Diode Forward Voltage
IF = 20A
QC
Total Capacitive Charge
IF = 20A, VR = 300V
di/dt =800A/µs
28
C
Total Capacitance
f = 1MHz, VR = 200V
130
f = 1MHz, VR = 400V
100
Unit
V
µA
A
1.8
2.4
V
nC
pF
Thermal and package characteristics
Min
RthJC
Junction to Case Thermal Resistance
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
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Typ
Mosfet
SiC Diode
2500
-40
Max
0.23
1.35
20
Unit
°C/W
V
150
300
1.5
29.2
°C
N.m
g
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APT58M50JCU2 – Rev 1 October, 2012
Symbol Characteristic
APT58M50JCU2
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
1.95 (.077)
2.14 (.084)
3.3 (.129)
3.6 (.143)
Drain
Cathode
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
38.0 (1.496)
38.2 (1.504)
Source
Gate
Dimensions in Millimeters and (Inches)
Typical Mosfet Performance Curve
0.9
0.2
0.7
0.15
0.5
0.1
0.3
0.05
0.1
Single P ulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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3-6
APT58M50JCU2 – Rev 1 October, 2012
Thermal Impedance (°C/W)
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
0.25
APT58M50JCU2
Low Voltage Output Characteristics
250
160
VGS=7,8 &10V
140
TJ=25°C
200
ID, Drain Current (A)
150
100
TJ=125°C
50
6.5V
120
100
6V
80
5.5V
60
40
20
0
TJ=125°C
0
0
5
10
15
20
0
5
20
25
30
2.5
VGS=10V
ID=42A
1.5
1
Transfert Characteristics
125
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
100
ID, Drain Current (A)
RDSon, Drain to Source ON resistance
Normalized RDSon vs. Temperature
TJ=125°C
75
50
25
TJ=25°C
0.5
25
50
75
100
125
0
150
0
1
TJ, Junction Temperature (°C)
Gate Charge vs Gate to Source
3
4
5
6
C, Capacitance (pF)
VDS=250V
8
VDS=400V
6
7
Capacitance vs Drain to Source Voltage
100000
VDS=100V
ID=42A
TJ=25°C
10
2
VGS, Gate to Source Voltage (V)
12
VGS, Gate to Source Voltage
15
VDS, Drain to Source Voltage (V)
VDS, Drain to Source Voltage (V)
2
10
4
2
Ciss
10000
1000
Coss
Crss
100
10
0
0
60
120
180
240
300
360
0
50
100
150
200
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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4-6
APT58M50JCU2 – Rev 1 October, 2012
ID, Drain Current (A)
VGS=10V
Low Voltage Output Characteristics
APT58M50JCU2
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.4
0.9
1.2
1
0.7
0.8
0.5
0.6
0.3
0.4
0.1
0.2
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
40
400
30
TJ=75°C
IR Reverse Current (µA)
IF Forward Current (A)
TJ=25°C
TJ=175°C
20
TJ=125°C
10
0
0
0.5
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V)
TJ=175°C
350
300
TJ=125°C
250
200
TJ=75°C
150
100
TJ=25°C
50
0
200
300
400 500 600 700
VR Reverse Voltage (V)
800
Capacitance vs.Reverse Voltage
C, Capacitance (pF)
800
600
400
200
0
10
100
VR Reverse Voltage
1000
ISOTOP® is a registered trademark of ST Microelectronics NV
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5-6
APT58M50JCU2 – Rev 1 October, 2012
1
APT58M50JCU2
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without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
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Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
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application in which the failure of the Seller's Product could create a situation where personal injury, death or property
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Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
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expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
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APT58M50JCU2 – Rev 1 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.