CD5820 thru CD5822 and CD3A20 thru CD3A40 JANHC AND JANKC PER MIL-PRF-19500/620 • 3 AMP SCHOTTKY BARRIER RECTIFIER CHIPS • SILICON DIOXIDE PASSIVATED • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF SOLDER REFLOW 64 MILS MAXIMUM RATINGS 64 MILS Operating Temperature: -65°C to +125°C Storage Temperature: -65°C to +150°C Average Recti½ed Forward Current: 3.0 AMP @ +55°C Derating: 43 mA / °C above +55°C 53 MILS • 1N5822 AVAILABLE IN BACKSIDE IS CATHODE FIGURE 1 CDI TYPE NUMBER WORKING PEAK REVERSE VOLTAGE MAXIMUM FORWARD VOLTAGE VRWM [email protected] [email protected] MAXIMUM REVERSE LEAKAGE CURRENT AT RATED VOLTAGE I R@25°C I R@100°C DESIGN DATA VOLTS VOLTS VOLTS mA mA CD5820 20 0.45 0.55 0.10 12.5 CD5821 30 0.45 0.55 0.10 12.5 CD5822 40 0.45 0.55 0.10 12.5 JHC, JKC 40 0.40 0.50 0.10 12.5 AL THICKNESS....... .........25,000 Å Min CD3A20 20 0.45 0.55 0.10 12.5 GOLD THICKNESS... .........4,000 Å Min CD3A30 30 0.45 0.55 0.10 12.5 CD3A40 40 0.45 0.55 0.10 12.5 METALLIZATION: Top: (Anode) .......................Al Back:(Cathode) ..................Au 5822 CHIP THICKNESS............. .........10 Mils TOLERANCES: ALL Dimensions + 2 mils 6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841 PHONE (978) 620-2600 FAX (978) 689-0803 WEBSITE: http://www.microsemi.com 215 CD5820 thru CD5822 and CD3A20 thru TYPICAL REVERSE LEAKAGE CURRENT AT RATED PIV (PULSED) IR, REVERSE CURRENT (mA) 10.0 1.0 0.1 CD5822 CD5821 CD5820 0.01 0.001 +25 +50 +75 +100 +125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 1 IF, FORWARD CURRENT, INSTANTANEOUS (AMPS) TYPICAL FORWARD VOLTAGE 100.0 10.0 1.0 0.1 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VF, FORWARD VOLTAGE, INSTANTANEOUS (VOLTS) FIGURE 2 216 CD3A40