View

CD5820
thru
CD5822
and
CD3A20
thru
CD3A40
JANHC AND JANKC PER MIL-PRF-19500/620
• 3 AMP SCHOTTKY BARRIER RECTIFIER CHIPS
• SILICON DIOXIDE PASSIVATED
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER REFLOW
64 MILS
MAXIMUM RATINGS
64 MILS
Operating Temperature: -65°C to +125°C
Storage Temperature: -65°C to +150°C
Average Recti½ed Forward Current: 3.0 AMP @ +55°C
Derating: 43 mA / °C above +55°C
53 MILS
• 1N5822 AVAILABLE IN
BACKSIDE IS CATHODE
FIGURE 1
CDI
TYPE
NUMBER
WORKING PEAK
REVERSE
VOLTAGE
MAXIMUM FORWARD VOLTAGE
VRWM
[email protected]
[email protected]
MAXIMUM REVERSE
LEAKAGE CURRENT
AT RATED VOLTAGE
I R@25°C
I R@100°C
DESIGN DATA
VOLTS
VOLTS
VOLTS
mA
mA
CD5820
20
0.45
0.55
0.10
12.5
CD5821
30
0.45
0.55
0.10
12.5
CD5822
40
0.45
0.55
0.10
12.5
JHC, JKC
40
0.40
0.50
0.10
12.5
AL THICKNESS....... .........25,000 Å Min
CD3A20
20
0.45
0.55
0.10
12.5
GOLD THICKNESS... .........4,000 Å Min
CD3A30
30
0.45
0.55
0.10
12.5
CD3A40
40
0.45
0.55
0.10
12.5
METALLIZATION:
Top: (Anode) .......................Al
Back:(Cathode) ..................Au
5822
CHIP THICKNESS............. .........10 Mils
TOLERANCES: ALL
Dimensions + 2 mils
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
215
CD5820
thru
CD5822
and
CD3A20
thru
TYPICAL REVERSE LEAKAGE CURRENT AT RATED PIV (PULSED)
IR, REVERSE CURRENT (mA)
10.0
1.0
0.1
CD5822
CD5821
CD5820
0.01
0.001
+25
+50
+75
+100
+125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 1
IF, FORWARD CURRENT, INSTANTANEOUS (AMPS)
TYPICAL FORWARD VOLTAGE
100.0
10.0
1.0
0.1
0.01
0.1 0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
VF, FORWARD VOLTAGE, INSTANTANEOUS (VOLTS)
FIGURE 2
216
CD3A40