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•
1N5819 AND 1N6761 AVAILABLE IN
JANHC AND JANKC PER MIL
PRF-19500/586
• 1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS
• SILICON DIOXIDE PASSIVATED
CD6759 thru CD6761
and
CD1A20 thru CD1A100
and
CD5817 thru CD5819
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER REFLOW
MAXIMUM RATINGS
Operating Temperature: -55°C to +125°C
Storage Temperature: -55°C to +150°C
Average Recti½ed Forward Current: 1.0 AMP @ +55°C
Derating: 14.3 mA / °C above +55°C
BACKSIDE IS CATHODE
FIGURE 1
CDI
TYPE
NUMBER
WORKING PEAK
REVERSE
VOLTAGE
MAXIMUM FORWARD VOLTAGE
VRWM
[email protected]
[email protected]
MAXIMUM REVERSE
LEAKAGE CURRENT
AT RATED VOLTAGE
I R@25°C
I R@100°C
VOLTS
VOLTS
VOLTS
mA
mA
CD5817
20
0.36
0.60
0.10
5.0
CD5818
30
0.36
0.60
0.10
5.0
CD5819
40
0.36
0.60
0.10
5.0
JHC, JKC
45
0.34
0.49
0.05
5.0
DESIGN DATA
METALLIZATION:
Top: (Anode) ........................Al
Back: (Cathode) ....................Au
AL THICKNESS................25,000 Å Min
GOLD THICKNESS... .........4,000 Å Min
5819
CD6759
60
0.38
0.75
0.10
6.0
CD6760
80
0.38
0.75
0.10
6.0
CD6761
100
0.38
0.75
0.10
6.0
JHC, JKC
100
0.38
0.69
0.10
12.0
CD1A20
20
0.36
0.60
0.10
5.0
CD1A30
30
0.36
0.60
0.10
5.0
CD1A40
40
0.36
0.60
0.10
5.0
CD1A50
50
0.36
0.60
0.10
5.0
CD1A60
60
0.38
0.75
0.10
12.0
CHIP THICKNESS.............. ........10 Mils
TOLERANCES: ALL
Dimensions + 2 mils
6761
CD1A80
80
0.38
0.75
0.10
12.0
CD1A100
100
0.38
0.75
0.10
12.0
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
219
CD6759
CD1A20
CD5817
thru CD6761
and
thru CD1A100
and
thru
CD5819
TYPICAL REVERSE LEAKAGE CURRENT AT RATED PIV (PULSED)
10.0
IR, REVERSE CURRENT (mA)
1.0
0.1
CD5819
CD5818
CD5817
0.01
0.001
+25
+50
+75
+100
+125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 1
TYPICAL FORWARD VOLTAGE
IF, FORWARD CURRENT, INSTANTANEOUS (AMPS)
100.0
10.0
1.0
0.1
0.01
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE, INSTANTANEOUS (VOLTS)
220
FIGURE 2
1.1