BGX7100 3D HV QF N2 4 Transmitter IQ modulator Rev. 5 — 3 September 2012 Product data sheet 1. General description The BGX7100 device combines high performance, high linearity I and Q modulation paths for use in radio frequency up-conversion. It supports RF frequency outputs in the range from 400 MHz to 4000 MHz. The BGX7100 IQ modulator is performance independent of the IQ common mode voltage. The modulator provides a typical output power at 1 dB gain compression (PL(1dB)) value of 12 dBm and a typical 27 dBm output third-order intercept point (IP3o). Unadjusted sideband suppression and carrier feedthrough are 50 dBc and 45 dBm respectively. A hardware control pin provides a fast power-down/power-up mode functionality which allows significant power saving. 2. Features and benefits 400 MHz to 4000 MHz frequency operating range Stable performance across 0.25 V to 3.3 V common-mode voltage input Independent low-current power-down hardware control pin 12 dBm output 1 dB compression point 27 dBm output third-order intercept point (typical) Integrated active biasing Single 5 V supply 180 differential IQ input impedance Matched 50 single-ended RF output impedance ESD protection at all pins 3. Applications Mobile network infrastructure Microwave and broadband RF and IF applications Industrial applications 4. Device family The BGX7100 operates in the RF frequency range of 400 MHz to 4000 MHz with modulation bandwidths up to 400 MHz. BGX7100 NXP Semiconductors Transmitter IQ modulator 5. Ordering information Table 1. Ordering information Type number BGX7100HN Package Name Description Version HVQFN24 plastic thermal enhanced very thin quad flat package; no leads; 24 terminals; body 4 4 0.85 mm SOT616-3 6. Functional diagram BGX7100 I MODULATION IN LOCAL OSCILLATOR IN 0° 90° RF OUT Q MODULATION IN 001aao016 Fig 1. Functional block diagram Differential I and Q baseband inputs are each fed to an associated upconverter mixer. The Local Oscillator (LO) carrier input is buffered and split into 0 degree and 90 degree signals. The in-phase signal is passed to the I mixer and the 90 degree phase-changed signal is passed to the Q mixer. The outputs of the mixers are summed to produce the resulting RF output signal. 7. Pinning information 7.1 Pinning The BGX7100 device pinout is designed to allow easy interfacing when mounted on a Printed-Circuit Board (PCB). When viewing the device from above, the two differential IQ baseband input paths are at the top and bottom. The common LO input is at the left and the RF output at the right. Multiple power and ground pins allow for independent supply domains, improving isolation between blocks. A small package footprint is chosen to reduce bond-wire induced series inductance in the RF ports. The input and output pin matching is described in Section 12 “Application information”. BGX7100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 2 of 38 BGX7100 NXP Semiconductors 19 i.c. 20 RFGND 21 MODI_P 22 MODI_N terminal 1 index area 23 i.c. 24 VCC_LO(5V0) Transmitter IQ modulator POFF_P 1 18 VCC_RF(5V0) LOGND 2 17 RFGND LO_P 3 LO_N 4 LOGND 5 14 RFGND LOGND 6 13 i.c. 16 RFOUT 15 i.c. RFGND 12 9 MODQ_N RFGND 11 8 RFGND MODQ_P 10 7 RFGND BGX7100 001aan769 Transparent top view Fig 2. Pin configuration 7.2 Pin description BGX7100 Product data sheet Table 2. Pin description Symbol Pin Type[1] Description POFF_P 1 I active HIGH logic input to power-down modulator LOGND 2 G LO ground LO_P 3 I LO positive input[2] LO_N 4 I LO negative input[2] LOGND 5 G LO ground LOGND 6 G LO ground RFGND 7 G RF ground RFGND 8 G RF ground MODQ_N 9 I modulator quadrature negative input MODQ_P 10 I modulator quadrature positive input RFGND 11 G RF ground RFGND 12 G RF ground i.c. 13 - internally connected; to be tied to ground RFGND 14 G RF ground i.c. 15 - internally connected; to be tied to ground RFOUT 16 O modulator single-ended RF output[2] RFGND 17 G RF ground VCC_RF(5V0) 18 P RF analog power supply 5 V i.c. 19 - internally connected; to be tied to ground RFGND 20 G RF ground MODI_P 21 I modulator in-phase positive input MODI_N 22 I modulator in-phase negative input All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 3 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator Table 2. Pin description …continued Symbol Pin Type[1] Description i.c. 23 - internally connected; to be tied to ground VCC_LO(5V0) 24 P LO analog power supply 5 V Exposed die pad - G exposed die pad; must be connected to RF ground [1] G = ground; I = input; O = output; P = power. [2] AC coupling required as shown in Figure 4 “Typical wideband application diagram”. 8. Functional description 8.1 General Each IQ baseband input has a 180 differential input impedance allowing straightforward matching, from the DAC output through the baseband filter. The device allows operation with IQ input common-mode voltages between 0.25 V and 3.3 V allowing direct connection to a broad family of DACs. The LO and RF ports provide broadband 50 termination to RF source and loads. The chip can be placed in inactive mode (see Section 8.2 “Shutdown control”). 8.2 Shutdown control Table 3. Shutdown control Mode Mode description Functional description POFF_P Idle modulator fully off; minimal supply current shutdown enabled > 1.5 V Active modulator active mode shutdown disabled < 0.5 V The modulator can be placed into inactive mode by the voltage level at power-up disable pin (pin 1, POFF_P). The time required to pass between active and low-current states is less than 1 s. The shutdown feature of IQ modulator during switching does not induce any unlock of the LO synthesizer in base station application thanks to the low impedance variation of the LO input. The graph (see Figure 3) describes the impact on LO impedance variation during the switching time. BGX7100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 4 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator aaa-004637 -13.55 S11 (dB) -13.57 off -13.59 -13.61 on on -13.63 -13.65 0 2 4 6 8 10 t (μs) Fig 3. LO input return loss variation (S11_LO) 9. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BGX7100 Product data sheet Symbol Parameter VCC Conditions Min Max Unit supply voltage - 5.5 V Pi(lo) local oscillator input power - 16 dBm Po(RF) RF output power - 20 dBm Tmb mounting base temperature 40 +85 C Tj junction temperature - +150 C Tstg storage temperature 65 +150 C VESD electrostatic discharge voltage EIA/JESD22-A114 (HBM) 2500 +2500 V EIA/JESD22-C101 (FCDM) 650 All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 +650 V © NXP B.V. 2012. All rights reserved. 5 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator Table 4. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit active HIGH logic input to power-down modulator - 3.5 V 0 5 V 2 +2 V Pin POFF_P Vi input voltage Pins MODI_N, MODI_P, MODQ_N and MODQ_P Vi input voltage VID differential input voltage DC 10. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-mb) Conditions thermal resistance from junction to mounting base Typ Unit 10 K/W 11. Characteristics Table 6. Characteristics Modulation source resistance per pin = 90 ; POFF_P connected to GND (shutdown disabled); VCC = 5 V; Tmb range = 40 C to +85 C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz unless otherwise stated. Symbol Parameter VCC supply voltage ICC(tot) total supply current Conditions Min Typ Max Unit 4.75 5 5.25 V flo = 900 MHz - 165 - mA flo = 2 GHz - 173 - mA flo = 2.5 GHz - 178 - mA flo = 3.5 GHz - 184 - mA - 6 - mA modulator in active mode modulator in inactive mode; Tmb = 25 C flo Pi(lo) local oscillator frequency [1] 400 - 4000 MHz local oscillator input power [1] 9 0 +6 dBm Pins MODI_x and MODQ_x[2] Vi(cm) common-mode input voltage 0.25 - 3.3 V S22_RF RF output return loss - 10 - dB S11_LO LO input return loss - 12 - dB - 400 - MHz MODI and MODQ[3] BWmod modulation bandwidth gain fall off < 1 dB; RS = 90 Ri(dif) differential input resistance - 180 - Ci(dif) differential input capacitance - 1.8 - pF [1] Operation outside this range is possible but parameters are not guaranteed. [2] x = N or P. [3] MODI = MODI_P MODI_N and MODQ = MODQ_P MODQ_N. BGX7100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 6 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator Table 7. Characteristics at 750 MHz Modulation source resistance per pin = 90 ; POFF_P connected to GND (shutdown disabled); VCC = 5 V; Tmb range = 40 C to +85 C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz unless otherwise stated. Symbol Parameter Conditions Min Typ Max Unit Po output power 1 V (p-p) differential on MODI and MODQ[1] - 0.2 - dBm PL(1dB) output power at 1 dB gain compression - 11.5 - dBm IP3o output third-order intercept point IQ frequency 1 = 4.5 MHz; IQ frequency 2 = 5.5 MHz; output power per tone = 10 dBm - 29 - dBm IP2o output second-order intercept point IQ frequency 1 = 4.5 MHz; IQ frequency 2 = 5.5 MHz; output power per tone = 10 dBm - 71 - dBm Nflr(o) output noise floor no modulation present - 159 - dBm/Hz modulation at MODI and MODQ[1]; Po(RF) = 10 dBm - 158.5 - dBm/Hz SBS sideband suppression unadjusted - 55 - dBc CF carrier feedthrough unadjusted - 55 - dBm [1] MODI = MODI_P MODI_N and MODQ = MODQ_P MODQ_N. Table 8. Characteristics at 910 MHz Modulation source resistance per pin = 90 ; POFF_P connected to GND (shutdown disabled); VCC = 5 V; Tmb range = 40 C to +85 C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz unless otherwise stated. Symbol Parameter Conditions Min Typ Max Unit Po output power 1 V (p-p) differential on MODI and MODQ[1] - 0.2 - dBm PL(1dB) output power at 1 dB gain compression - 11.5 - dBm IP3o output third-order intercept point IQ frequency 1 = 4.5 MHz; IQ frequency 2 = 5.5 MHz; output power per tone = 10 dBm - 29 - dBm IP2o output second-order intercept point IQ frequency 1 = 4.5 MHz; IQ frequency 2 = 5.5 MHz; output power per tone = 10 dBm - 72 - dBm Nflr(o) output noise floor no modulation present - 159 - dBm/Hz modulation at MODI and MODQ[1]; Po(RF) = 10 dBm - 158.5 - dBm/Hz SBS sideband suppression unadjusted - 49 - dBc CF carrier feedthrough unadjusted - 55 - dBm [1] MODI = MODI_P MODI_N and MODQ = MODQ_P MODQ_N. BGX7100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 7 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator Table 9. Characteristics at 1.840 GHz Modulation source resistance per pin = 90 ; POFF_P connected to GND (shutdown disabled); VCC = 5 V; Tmb range = 40 C to +85 C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz unless otherwise stated. Symbol Parameter Conditions Min Typ Max Unit Po output power 1 V (p-p) differential on MODI and MODQ[1] - 0.2 - dBm PL(1dB) output power at 1 dB gain compression - 11.5 - dBm IP3o output third-order intercept point IQ frequency 1 = 4.5 MHz; IQ frequency 2 = 5.5 MHz; output power per tone = 10 dBm - 27 - dBm IP2o output second-order intercept point IQ frequency 1 = 4.5 MHz; IQ frequency 2 = 5.5 MHz; output power per tone = 10 dBm - 69 - dBm Nflr(o) output noise floor no modulation present - 158.5 - dBm/Hz modulation at MODI and MODQ[1]; Po(RF) = 10 dBm - 158 - dBm/Hz SBS sideband suppression unadjusted - 47 - dBc CF carrier feedthrough unadjusted - 50 - dBm [1] MODI = MODI_P MODI_N and MODQ = MODQ_P MODQ_N. Table 10. Characteristics at 1.960 GHz Modulation source resistance per pin = 90 ; POFF_P connected to GND (shutdown disabled); VCC = 5 V; Tmb range = 40 C to +85 C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz unless otherwise stated. Symbol Parameter Conditions Min Typ Max Unit Po output power 1 V (p-p) differential on MODI and MODQ[1] - 0.2 - dBm PL(1dB) output power at 1 dB gain compression - 11.5 - dBm IP3o output third-order intercept point IQ frequency 1 = 4.5 MHz; IQ frequency 2 = 5.5 MHz; output power per tone = 10 dBm - 27 - dBm IP2o output second-order intercept point IQ frequency 1 = 4.5 MHz; IQ frequency 2 = 5.5 MHz; output power per tone = 10 dBm - 72.5 - dBm Nflr(o) output noise floor no modulation present - 158.5 - dBm/Hz modulation at MODI and MODQ[1]; Po(RF) = 10 dBm - 158 - dBm/Hz SBS sideband suppression unadjusted - 49 - dBc CF carrier feedthrough unadjusted - 48 - dBm [1] MODI = MODI_P MODI_N and MODQ = MODQ_P MODQ_N. BGX7100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 8 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator Table 11. Characteristics at 2.140 GHz Modulation source resistance per pin = 90 ; POFF_P connected to GND (shutdown disabled); VCC = 5 V; Tmb range = 40 C to +85 C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz unless otherwise stated. Symbol Parameter Conditions Min Typ Max Unit Po output power 1 V (p-p) differential on MODI and MODQ[1] - 0.2 - dBm PL(1dB) output power at 1 dB gain compression - 11.5 - dBm IP3o output third-order intercept point IQ frequency 1 = 4.5 MHz; IQ frequency 2 = 5.5 MHz; output power per tone = 10 dBm - 27 - dBm IP2o output second-order intercept point IQ frequency 1 = 4.5 MHz; IQ frequency 2 = 5.5 MHz; output power per tone = 10 dBm - 74 - dBm Nflr(o) output noise floor no modulation present - 158.5 - dBm/Hz modulation at MODI and MODQ[1]; Po(RF) = 10 dBm - 158 - dBm/Hz SBS sideband suppression unadjusted - 51 - dBc CF carrier feedthrough unadjusted - 45 - dBm [1] MODI = MODI_P MODI_N and MODQ = MODQ_P MODQ_N. Table 12. Characteristics at 2.650 GHz Modulation source resistance per pin = 90 ; POFF_P connected to GND (shutdown disabled); VCC = 5 V; Tmb range = 40 C to +85 C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz unless otherwise stated. Symbol Parameter Conditions Min Typ Max Unit Po output power 1 V (p-p) differential on MODI and MODQ[1] - 0.2 - dBm PL(1dB) output power at 1 dB gain compression - 11.5 - dBm IP3o output third-order intercept point IQ frequency 1 = 4.5 MHz; IQ frequency 2 = 5.5 MHz; output power per tone = 10 dBm - 26 - dBm IP2o output second-order intercept point IQ frequency 1 = 4.5 MHz; IQ frequency 2 = 5.5 MHz; output power per tone = 10 dBm - 62 - dBm Nflr(o) output noise floor no modulation present - 158 - dBm/Hz modulation at MODI and MODQ[1]; Po(RF) = 10 dBm - 158 - dBm/Hz SBS sideband suppression unadjusted - 60 - dBc CF carrier feedthrough unadjusted - 45 - dBm [1] MODI = MODI_P MODI_N and MODQ = MODQ_P MODQ_N. BGX7100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 9 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator Table 13. Characteristics at 3.650 GHz Modulation source resistance per pin = 90 ; POFF_P connected to GND (shutdown disabled); VCC = 5 V; Tmb range = 40 C to +85 C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz unless otherwise stated. Symbol Parameter Conditions Min Typ Max Unit Po output power 1 V (p-p) differential on MODI and MODQ[1] - 0.2 - dBm PL(1dB) output power at 1 dB gain compression - 11.5 - dBm IP3o output third-order intercept point IQ frequency 1 = 4.5 MHz; IQ frequency 2 = 5.5 MHz; output power per tone = 10 dBm - 25 - dBm IP2o output second-order intercept point IQ frequency 1 = 4.5 MHz; IQ frequency 2 = 5.5 MHz; output power per tone = 10 dBm - 60 - dBm Nflr(o) output noise floor no modulation present - 158 - dBm/Hz modulation at MODI and MODQ[1]; Po(RF) = 10 dBm - 158 - dBm/Hz SBS sideband suppression unadjusted - 53 - dBc CF carrier feedthrough unadjusted - 43 - dBm [1] MODI = MODI_P MODI_N and MODQ = MODQ_P MODQ_N. BGX7100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 10 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator 12. Application information modulator in-phase positive input VCC MODI_P RFGND 24 MODI_N POFF_P i.c. VCC_LO(5V0) 22 pF 23 22 21 20 i.c. modulator in-phase negative input 100 nF 19 1 18 VCC VCC_RF(5V0) 22 pF LOGND LO input 1 5 O PRIMARY O TC1-1-43A+ 3 18 pF BGX7100 2 17 LO_P 3 16 RFOUT 0° 90° 0.3 pF LO_N 4 4 100 nF RFGND 39 pF RFOUTPUT 0.4 pF 18 pF 15 i.c. LOGND 5 14 13 MODQ_N 10 11 12 RFGND 9 RFGND 8 MODQ_P 7 RFGND 6 RFGND LOGND RFGND i.c. modulator quadrature negative input modulator quadrature positive input Fig 4. aaa-002965 Typical wideband application diagram Figure 4 shows a typical wideband (from 0.4 GHz to 4 GHz) application circuit. Refer to the application note for narrowband optimum component values. 12.1 External DAC interfacing Nominal DAC single-ended output currents are between 0 mA and 20 mA. If the DAC outputs are only designed for 1 V peak-to-peak differential (250 mV peak-single) then the single-ended impedance at the DAC needs to be limited to 25 . This can be split as 50 load resistors at the DAC outputs and a 225 differential resistor in parallel to the modulator inputs (see Figure 5). In this way, the differential filter can be properly terminated by 100 at both ends. If the DAC outputs can withstand a higher swing without performance degradation, then 90 load resistors can be placed at the DAC outputs. No external resistors are needed in this case, only the differential filter needs to be designed to have 180 at both ends (see Figure 6). BGX7100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 11 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator filter location I 225 Ω 180 Ω diff BGX7100 DAC 50 Ω Q aaa-001501 Fig 5. Typical low-power interface filter location I 180 Ω diff BGX7100 DAC 90 Ω Q aaa-001502 Fig 6. Typical high-power interface 12.2 RF Good RF port matching typically requires some reactive components to tune-out residual inductance or capacitance. As the LO inputs and RF output are internally DC biased, both pins need a series AC-coupling capacitor. BGX7100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 12 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator 13. Test information Parameters for the following drawings: VCC = 5 V; Tmb = 25 C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz; IQ amplitude = 0.5 V (p-p) differential sine wave; Vi(cm) = 0.5 V; broadband output match; unless otherwise specified. aaa-002818 0.22 current consumption (mA) 0.18 (1) (2) (3) 0.14 0.10 400 1600 2800 4000 LO frequency (MHz) (1) Tmb = +25C. (2) Tmb = 40 C. (3) Tmb = +85 C. Fig 7. Current consumption versus flo and Tmb BGX7100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 13 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator Parameters for the five following drawings: VCC = 5 V; Tmb = 25 C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz; IQ amplitude = 0.5 V (p-p) differential sine wave; Vi(cm) = 0.5 V; broadband output match; unless otherwise specified. aaa-002819 1 output power (dBm) aaa-002820 1 output power (dBm) -3 -3 -7 -7 (1) (1) (2) (2) (3) (3) -11 -11 -15 400 1600 -15 400 2800 4000 LO frequency (MHz) 1600 (1) Tmb = +25 C. (1) VCC = 5 V. (2) Tmb = 40 C. (2) VCC = 4.75 V. (3) Tmb = +85 C. (3) VCC = 5.25 V. Fig 8. Po versus flo and Tmb Fig 9. aaa-002821 1 output power (dBm) Po versus flo and VCC aaa-002822 1 output power (dBm) -3 -3 -7 -7 (1) (1) (2) (2) (3) (3) -11 -15 400 2800 4000 LO frequency (MHz) (4) -11 1600 2800 4000 LO frequency (MHz) -15 400 1600 (1) Pi(lo) = 0 dBm. (1) Vi(cm) = 0.5 V. (2) Pi(lo) = 3 dBm. (2) Vi(cm) = 0.25 V. (3) Pi(lo) = +3 dBm. (3) Vi(cm) = 1.5 V. 2800 4000 LO frequency (MHz) (4) Vi(cm) = 2.5 V. Fig 10. Po versus flo and Pi(lo) BGX7100 Product data sheet Fig 11. Po versus flo and Vi(cm) All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 14 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator aaa-002823 20 output power (dBm) 0 -20 -40 10-2 10-1 1 10 baseband voltage differential (V (p-p)) (1) flo = 2140 MHz. Fig 12. Po versus baseband voltage at 2140 MHz BGX7100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 15 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator Parameters for the four following drawings: VCC = 5 V; Tmb = 25 C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz; IQ amplitude = 0.5 V (p-p) differential sine wave; Vi(cm) = 0.5 V; broadband output match; unless otherwise specified. aaa-002824 14 PL(1dB) (dBm) 12 10 aaa-002825 14 PL(1dB) (dBm) 12 10 (1) (1) (2) 8 (2) 8 (3) (3) 6 6 4 4 2 2 0 400 1600 2800 4000 LO frequency (MHz) 0 400 1600 (1) Tmb = +25 C. (1) VCC = 5 V. (2) Tmb = 40 C. (2) VCC = 4.75 V. (3) Tmb = +85 C. (3) VCC = 5.25 V. Fig 13. PL(1dB) versus flo and Tmb Fig 14. PL(1dB) versus flo and VCC aaa-002826 14 PL(1dB) (dBm) 12 10 aaa-002827 14 PL(1dB) (dBm) 12 10 (1) (1) (2) (2) 8 2800 4000 LO frequency (MHz) (3) 8 (3) (4) 6 6 4 4 2 2 0 400 1600 2800 4000 LO frequency (MHz) 0 400 1600 (1) Pi(lo) = 0 dBm. (1) Vi(cm) = 0.5 V. (2) Pi(lo) = 3 dBm. (2) Vi(cm) = 0.25 V. (3) Pi(lo) = +3 dBm. (3) Vi(cm) = 1.5 V. 2800 4000 LO frequency (MHz) (4) Vi(cm) = 2.5 V. Fig 15. PL(1dB) versus flo and Pi(lo) BGX7100 Product data sheet Fig 16. PL(1dB) versus flo and Vi(cm) All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 16 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator Parameters for the four following drawings: VCC = 5 V; Tmb = 25 C; Pi(lo) = 0 dBm; two tones; tone 1: IQ frequency = 4.5 MHz and tone 2: IQ frequency = 5.5 MHz; Po per tone = 10 dBm; Vi(cm) = 0.5 V; broadband output match; unless otherwise specified. aaa-002828 30 IP3O (dBm) IP3O (dBm) (1) 20 (1) (2) 20 (3) (2) (3) 10 0 400 aaa-002829 30 10 1600 2800 4000 LO frequency (MHz) 0 400 1600 (1) Tmb = +25 C. (1) VCC = 5 V. (2) Tmb = 40 C. (2) VCC = 4.75 V. (3) Tmb = +85 C. (3) VCC = 5.25 V. Fig 17. IP3o versus flo and Tmb Fig 18. IP3o versus flo and VCC aaa-002830 30 2800 4000 LO frequency (MHz) IP3O (dBm) aaa-002831 30 IP3O (dBm) (1) (1) (2) 20 (2) 20 (3) (3) (4) 10 0 400 10 1600 2800 4000 LO frequency (MHz) 0 400 1600 (1) Pi(lo) = 0 dBm. (1) Vi(cm) = 0.5 V. (2) Pi(lo) = 3 dBm. (2) Vi(cm) = 0.25 V. (3) Pi(lo) = +3 dBm. (3) Vi(cm) = 1.5 V. 2800 4000 LO frequency (MHz) (4) Vi(cm) = 2.5 V. Fig 19. IP3o versus flo and Pi(lo) BGX7100 Product data sheet Fig 20. IP3o versus flo and Vi(cm) All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 17 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator Parameters for the four following drawings: VCC = 5 V; Tmb = 25 C; Pi(lo) = 0 dBm; two tones; tone 1: IQ frequency = 4.5 MHz and tone 2: IQ frequency = 5.5 MHz; Po per tone = 10 dBm; Vi(cm) = 0.5 V; broadband output match; unless otherwise specified. aaa-002832 100 IP2O (dBm) aaa-002833 100 IP2O (dBm) 80 80 60 60 (1) (1) (2) (2) (3) (3) 40 40 20 20 0 400 1600 2800 4000 LO frequency (MHz) 0 400 1600 (1) Tmb = +25 C. (1) VCC = 5 V. (2) Tmb = 40 C. (2) VCC = 4.75 V. (3) Tmb = +85 C. (3) VCC = 5.25 V. Fig 21. IP2o versus flo and Tmb Fig 22. IP2o versus flo and VCC aaa-002834 100 IP2O (dBm) aaa-002835 100 IP2O (dBm) 80 80 60 60 (1) (1) (2) (2) (3) (3) 40 40 20 20 0 400 2800 4000 LO frequency (MHz) 1600 2800 4000 LO frequency (MHz) 0 400 (4) 1600 (1) Pi(lo) = 0 dBm. (1) Vi(cm) = 0.5 V. (2) Pi(lo) = 3 dBm. (2) Vi(cm) = 0.25 V. (3) Pi(lo) = +3 dBm. (3) Vi(cm) = 1.5 V. 2800 4000 LO frequency (MHz) (4) Vi(cm) = 2.5 V. Fig 23. IP2o versus flo and Pi(lo) BGX7100 Product data sheet Fig 24. IP2o versus flo and Vi(cm) All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 18 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator Parameters for the five following drawings: VCC = 5 V; Tmb = 25 C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz; IQ amplitude = 0.5 V (p-p) differential sine wave; Vi(cm) = 0.5 V; broadband output match; unless otherwise specified. aaa-002836 0 unadjusted carrier feedthrough (dBm) unadjusted carrier feedthrough (dBm) -20 -20 -40 -40 -60 aaa-002837 0 -60 (1) (1) (2) (2) (3) -80 400 1600 (3) 2800 4000 LO frequency (MHz) -80 400 1600 (1) Tmb = +25 C. (1) VCC = 5 V. (2) Tmb = 40 C. (2) VCC = 4.75 V. (3) Tmb = +85 C. (3) VCC = 5.25 V. Fig 25. Unadjusted CF versus flo and Tmb Fig 26. Unadjusted CF versus flo and VCC aaa-002838 0 2800 4000 LO frequency (MHz) aaa-002839 0 unadjusted carrier feedthrough (dBm) unadjusted carrier feedthrough (dBm) -20 -20 (1) (2) (3) -40 (4) -40 (1) (2) -60 -80 400 -60 (3) 1600 2800 4000 LO frequency (MHz) -80 400 1600 (1) Pi(lo) = 0 dBm. (1) Vi(cm) = 0.5 V. (2) Pi(lo) = 3 dBm. (2) Vi(cm) = 0.25 V. (3) Pi(lo) = +3 dBm. (3) Vi(cm) = 1.5 V. 2800 4000 LO frequency (MHz) (4) Vi(cm) = 2.5 V. Fig 27. Unadjusted CF versus flo and Pi(lo) BGX7100 Product data sheet Fig 28. Unadjusted CF versus flo and Vi(cm) All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 19 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator aaa-002840 0 adjusted carrier feedthrough (dBm) -20 (1) -40 (2) (3) -60 -80 -100 495 1695 2895 4095 LO frequency (MHz) (1) Tmb = +25 C. (2) Tmb = 40 C. (3) Tmb = +85 C. Fig 29. Adjusted CF versus flo and Tmb after nulling at 25 C BGX7100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 20 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator Parameters for the five following drawings: VCC = 5 V; Tmb = 25 C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz; IQ amplitude = 0.5 V (p-p) differential sine wave; Vi(cm) = 0.5 V; broadband output match; unless otherwise specified. aaa-002841 80 unadjusted sideband suppression (dBc) aaa-002842 80 unadjusted sideband suppression (dBc) 60 60 (1) (1) (2) 40 (2) 40 (3) (3) 20 0 400 20 1600 2800 4000 LO frequency (MHz) 0 400 1600 (1) Tmb = +25 C. (1) VCC = 5 V. (2) Tmb = 40 C. (2) VCC = 4.75 V. (3) Tmb = +85 C. (3) VCC = 5.25 V. Fig 30. Unadjusted SBS versus flo and Tmb Fig 31. Unadjusted SBS versus flo and VCC aaa-002843 80 2800 4000 LO frequency (MHz) unadjusted sideband suppression (dBc) aaa-002844 80 unadjusted sideband suppression (dBc) 60 60 (1) (2) (1) (2) 40 (3) 40 (4) (3) 20 0 400 20 1600 2800 4000 LO frequency (MHz) 0 400 1600 (1) Pi(lo) = 0 dBm. (1) Vi(cm) = 0.5 V. (2) Pi(lo) = 3 dBm. (2) Vi(cm) = 0.25 V. (3) Pi(lo) = +3 dBm. (3) Vi(cm) = 1.5 V. 2800 4000 LO frequency (MHz) (4) Vi(cm) = 2.5 V. Fig 32. Unadjusted SBS versus flo and Pi(lo) BGX7100 Product data sheet Fig 33. Unadjusted SBS versus flo and Vi(cm) All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 21 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator aaa-002845 120 sideband suppression (dB) 80 (1) (2) (3) 40 0 495 1695 2895 4095 LO frequency (MHz) (1) Tmb = +25 C. (2) Tmb = 40 C. (3) Tmb = +85 C. Fig 34. Adjusted SBS versus flo and Tmb after nulling at 25 C BGX7100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 22 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator Parameters for the six following drawings: VCC = 5 V; Tmb = 25 C; LO = 0 dBm; IQ frequency = 5 MHz; IQ amplitude = 0.25 V (p-p) single-ended sine wave; Vi(cm) = 0.5 V; broadband output match; unless otherwise specified. aaa-002939 0 adjusted sideband suppression (dB) -20 -40 aaa-002940 0 adjusted sideband suppression (dB) -20 -40 -60 -60 (1) (2) (3) (1) (2) (3) -80 -80 -100 670 710 750 790 830 LO frequency (MHz) -100 860 Adjusted at 750 MHz and after nulling Tmb at 25 C 900 (1) Tmb = +25 C. (2) Tmb = 40 C. (2) Tmb = 40 C. (3) Tmb = +85 C. (3) Tmb = +85 C. aaa-002941 0 adjusted sideband suppression (dB) -20 -40 980 1020 LO frequency (MHz) Adjusted at 942.5 MHz and after nulling Tmb at 25 C (1) Tmb = +25 C. Fig 35. Adjusted CF versus flo and Tmb (750 LTE band) 940 Fig 36. Adjusted CF versus flo and Tmb (GSM band) aaa-002942 0 adjusted sideband suppression (dB) -20 -40 (1) (2) (3) (1) (2) (3) -60 -60 -80 -80 -100 1880 1920 1960 2000 2040 LO frequency (MHz) Adjusted at 1840 MHz and after nulling Tmb at 25 C -100 2060 2100 (1) Tmb = +25 C. (2) Tmb = 40 C. (2) Tmb = 40 C. (3) Tmb = +85 C. Fig 37. Adjusted CF versus flo and Tmb (PCS band) BGX7100 Product data sheet 2180 2220 LO frequency (MHz) Adjusted at 2140 MHz and after nulling Tmb at 25 C (1) Tmb = +25 C. (3) Tmb = +85 C. 2140 Fig 38. Adjusted CF versus flo and Tmb (UMTS band) All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 23 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator aaa-002943 0 adjusted sideband suppression (dB) aaa-002944 0 adjusted carrier feedthrough (dBm) -20 -40 -40 (1) (2) (3) (1) (2) (3) -60 -80 -80 -120 2500 2540 2580 2620 2660 2700 LO frequency (MHz) Adjusted at 2600 MHz and after nulling Tmb at 25 C -100 3400 3440 (1) Tmb = +25 C. (2) Tmb = 40 C. (2) Tmb = 40 C. (3) Tmb = +85 C. (3) Tmb = +85 C. BGX7100 Product data sheet 3520 3560 3600 LO frequency (MHz) Adjusted at 3500 MHz and after nulling Tmb at 25 C (1) Tmb = +25 C. Fig 39. Adjusted CF versus flo and Tmb (2.6 GHz LTE band) 3480 Fig 40. Adjusted CF versus flo and Tmb (Wi MAX/LTE band) All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 24 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator Parameters for the six following drawings: VCC = 5 V; Tmb = 25 C; LO = 0 dBm; IQ frequency = 5 MHz; IQ amplitude = 0.25 V (p-p) single-ended sine wave; Vi(cm) = 0.5 V; broadband output match; unless otherwise specified. aaa-002945 100 adjusted sideband suppression (dB) 80 aaa-002946 100 adjusted sideband suppression (dB) 80 (1) (2) (3) (1) (2) (3) 60 60 40 40 20 20 0 670 710 750 790 830 LO frequency (MHz) 0 860 Adjusted at 750 MHz and after nulling Tmb at 25 C 900 (1) Tmb = +25 C. (2) Tmb = 40 C. (2) Tmb = 40 C. (3) Tmb = +85 C. (3) Tmb = +85 C. aaa-002947 100 adjusted sideband suppression (dB) 80 (1) (2) Fig 42. Adjusted SBS versus flo and Tmb (GSM900 band) (3) 60 40 40 20 20 1920 aaa-002948 100 adjusted sideband suppression (dB) 80 60 0 1880 1960 2000 2040 LO frequency (MHz) Adjusted at 1840 MHz and after nulling Tmb at 25 C (1) 0 2060 2100 (1) Tmb = +25 C. (2) Tmb = 40 C. (2) Tmb = 40 C. (3) Tmb = +85 C. (3) Tmb = +85 C. Fig 43. Adjusted SBS versus flo and Tmb (PCS band) Product data sheet (2) (3) 2140 2180 2220 LO frequency (MHz) Adjusted at 2140 MHz and after nulling Tmb at 25 C (1) Tmb = +25 C. BGX7100 980 1020 LO frequency (MHz) Adjusted at 942.5 MHz and after nulling Tmb at 25 C (1) Tmb = +25 C. Fig 41. Adjusted SBS versus flo and Tmb (750 LTE band) 940 Fig 44. Adjusted SBS versus flo and Tmb (UMTS band) All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 25 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator aaa-002949 120 adjusted sideband suppression (dB) (1) (2) (3) aaa-002950 100 adjusted sideband suppression (dB) 80 (1) 80 (3) 60 (2) 40 40 20 0 2500 2540 2580 2620 2660 2700 LO frequency (MHz) Adjusted at 2600 MHz and after nulling Tmb at 25 C 0 3400 3440 (1) Tmb = +25 C. (2) Tmb = 40 C. (2) Tmb = 40 C. (3) Tmb = +85 C. (3) Tmb = +85 C. BGX7100 Product data sheet 3520 3560 3600 LO frequency (MHz) Adjusted at 3500 MHz and after nulling Tmb at 25 C (1) Tmb = +25 C. Fig 45. Adjusted SBS versus flo and Tmb(2.6 GHz LTE band) 3480 Fig 46. Adjusted SBS versus flo and Tmb (Wi MAX/LTE band) All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 26 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator Parameters for the three following drawings: noise floor without baseband; VCC = 5 V; Tmb = 25 C; Pi(lo) = 0 dBm; offset frequency = 20 MHz; input baseband ports terminated in 50 ; unless otherwise specified. aaa-002846 -144 aaa-002847 -144 output noise floor (dBm/Hz) output noise floor (dBm/Hz) -154 -154 (1) (1) (2) -164 -174 400 (3) 1600 (2) -164 (3) -174 400 2800 4000 LO frequency (MHz) 1600 (1) Tmb = +25 C. (1) VCC = 5 V. (2) Tmb = 40 C. (2) VCC = 4.75 V. (3) Tmb = +85 C. (3) VCC = 5.25 V. Fig 47. Nflr(o) versus flo and Tmb 2800 4000 LO frequency (MHz) Fig 48. Nflr(o) versus flo and supply voltage aaa-002848 -144 output noise floor (dBm/Hz) -154 (1) (2) -164 (3) -174 400 1600 2800 4000 LO frequency (MHz) (1) Pi(lo) = 0 dBm. (2) Pi(lo) = 3 dBm. (3) Pi(lo) = +3 dBm. Fig 49. Nflr(o) versus flo and Pi(lo) BGX7100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 27 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator Parameters for the two following drawings: noise floor with baseband; VCC = 5 V; Tmb = 25 C; Pi(lo) = 0 dBm; input baseband ports terminated on short circuit to ground for MODI_N, MODI_P and MODQ_N; DC signal on MODQ_P; unless otherwise specified. aaa-002849 -150 RFoutput noise floor (dBm/Hz) aaa-002850 -152 RFoutput noise floor (dBm/Hz) -152 -154 -154 (1) (2) -156 (3) (1) -156 (2) (3) -158 -158 -160 -30 -20 -10 0 10 RF output power (dBm) -160 -30 -20 (1) Pi(lo) = 0 dBm. (1) RF = 1840 MHz. (2) Pi(lo) = 3 dBm. (2) RF = 942.5 MHz. (3) Pi(lo) = +3 dBm. (3) RF = 2140 MHz. Fig 50. Nflr(o) versus Po at Pi(lo) = 0 dBm and fRF = 2140 MHz with 30 MHz offset BGX7100 Product data sheet -10 0 10 RF output power (dBm) Fig 51. Nflr(o) versus Po at Pi(lo) = 0 dBm All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 28 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator Parameters for the following drawing: Tmb = 25 C; Pi(lo) = 0 dBm; two tones for IM3, IM5, wanted and IP3o; tone 1: IQ frequency = 4.5 MHz and tone 2: IQ frequency = 5.5 MHz; Vi(cm) = 0.5 V; for noise floor measurement see preceding conditions; noise floor measurement has been integrated in 3.84 MHz bandwidth; unless otherwise specified. aaa-002851 noise floor contribution no more negligeable BGX7100 30 dBm (1) beginning of strong swing non linearity 10 Pout = -10 dBm -10 (2) -30 frequency 2.14 GHz 3 dB slope area (4) -50 -70 (3) (6) (5) -90 (7) -110 I/Q input level (1) Measured IP3o. (2) Pout/Tone 1 dB step. (3) Measured IM3. (4) Trendline IM3. (5) Noise floor in 3.84 MHz. (6) Measured IM5. (7) Trendline IM5. Fig 52. IP3o, wanted, IM3, IM5 tone and noise floor 14. Marking Table 14. Marking codes Type number Marking code BGX7100HN 7100 15. Package information The BGX7100 uses an HVQFN 24-pin package with underside heat spreader ground. BGX7100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 29 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator 16. Package outline HVQFN24: plastic thermal enhanced very thin quad flat package; no leads; 24 terminals; body 4 x 4 x 0.85 mm A B D SOT616-3 terminal 1 index area A A1 E c detail X e1 C 1/2 e e 7 12 y y1 C v M C A B w M C b L 13 6 e e2 Eh 1/2 e 1 18 terminal 1 index area 24 19 X Dh 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A(1) max. A1 b c D (1) Dh E (1) Eh e e1 e2 L v w y y1 mm 1 0.05 0.00 0.30 0.18 0.2 4.1 3.9 2.75 2.45 4.1 3.9 2.75 2.45 0.5 2.5 2.5 0.5 0.3 0.1 0.05 0.05 0.1 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT616-3 --- MO-220 --- EUROPEAN PROJECTION ISSUE DATE 04-11-19 05-03-10 Fig 53. Package outline SOT616-3 (HVQFN24) BGX7100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 30 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator 17. Soldering of SMD packages This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description”. 17.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both the mechanical and the electrical connection. There is no single soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization. 17.2 Wave and reflow soldering Wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. The wave soldering process is suitable for the following: • Through-hole components • Leaded or leadless SMDs, which are glued to the surface of the printed circuit board Not all SMDs can be wave soldered. Packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. Also, leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased probability of bridging. The reflow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature profile. Leaded packages, packages with solder balls, and leadless packages are all reflow solderable. Key characteristics in both wave and reflow soldering are: • • • • • • Board specifications, including the board finish, solder masks and vias Package footprints, including solder thieves and orientation The moisture sensitivity level of the packages Package placement Inspection and repair Lead-free soldering versus SnPb soldering 17.3 Wave soldering Key characteristics in wave soldering are: • Process issues, such as application of adhesive and flux, clinching of leads, board transport, the solder wave parameters, and the time during which components are exposed to the wave • Solder bath specifications, including temperature and impurities BGX7100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 31 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator 17.4 Reflow soldering Key characteristics in reflow soldering are: • Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see Figure 54) than a SnPb process, thus reducing the process window • Solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board • Reflow temperature profile; this profile includes preheat, reflow (in which the board is heated to the peak temperature) and cooling down. It is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). In addition, the peak temperature must be low enough that the packages and/or boards are not damaged. The peak temperature of the package depends on package thickness and volume and is classified in accordance with Table 15 and 16 Table 15. SnPb eutectic process (from J-STD-020C) Package thickness (mm) Package reflow temperature (C) Volume (mm3) < 350 350 < 2.5 235 220 2.5 220 220 Table 16. Lead-free process (from J-STD-020C) Package thickness (mm) Package reflow temperature (C) Volume (mm3) < 350 350 to 2000 > 2000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245 Moisture sensitivity precautions, as indicated on the packing, must be respected at all times. Studies have shown that small packages reach higher temperatures during reflow soldering, see Figure 54. BGX7100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 32 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator maximum peak temperature = MSL limit, damage level temperature minimum peak temperature = minimum soldering temperature peak temperature time 001aac844 MSL: Moisture Sensitivity Level Fig 54. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description”. 18. Abbreviations Table 17. BGX7100 Product data sheet Abbreviations Acronym Description DAC Digital-to-Analog Converter DC Direct Current ESD ElectroStatic Discharge FCDM Field-induced Charged-Device Model HBM Human Body Model IF Intermediate Frequency LO Local Oscillator PCB Printed-Circuit Board RF Radio Frequency TDD Time Division Duplex All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 33 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator 19. Revision history Table 18. Revision history Document ID Release date Data sheet status Change notice Supersedes BGX7100 v.5 20120903 Product data sheet - BGX7100 v.4 Modifications: • • Table 6: updated Pi(lo) values Section 8.2: updated BGX7100 v.4 20120808 Product data sheet - BGX7100 v.3 BGX7100 v.3 20120425 Product data sheet - BGX7100 v.2 BGX7100 v.2 20120214 Preliminary data sheet - BGX7100 v.1 BGX7100 v.1 20110621 Objective data sheet - - BGX7100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 34 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator 20. Legal information 20.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 20.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 20.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. BGX7100 Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 35 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 20.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 21. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BGX7100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 36 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator 22. Tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Ordering information . . . . . . . . . . . . . . . . . . . . .2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . .3 Shutdown control . . . . . . . . . . . . . . . . . . . . . . . .4 Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . .5 Thermal characteristics . . . . . . . . . . . . . . . . . . .6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . .6 Characteristics at 750 MHz . . . . . . . . . . . . . . . .7 Characteristics at 910 MHz . . . . . . . . . . . . . . . .7 Characteristics at 1.840 GHz . . . . . . . . . . . . . . .8 Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Characteristics at 1.960 GHz . . . . . . . . . . . . . . 8 Characteristics at 2.140 GHz . . . . . . . . . . . . . . 9 Characteristics at 2.650 GHz . . . . . . . . . . . . . . 9 Characteristics at 3.650 GHz . . . . . . . . . . . . . . 10 Marking codes . . . . . . . . . . . . . . . . . . . . . . . . . 29 SnPb eutectic process (from J-STD-020C) . . . 32 Lead-free process (from J-STD-020C) . . . . . . 32 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . 33 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 34 23. Figures Fig 1. Fig 2. Fig 3. Fig 4. Fig 5. Fig 6. Fig 7. Fig 8. Fig 9. Fig 10. Fig 11. Fig 12. Fig 13. Fig 14. Fig 15. Fig 16. Fig 17. Fig 18. Fig 19. Fig 20. Fig 21. Fig 22. Fig 23. Fig 24. Fig 25. Fig 26. Fig 27. Fig 28. Fig 29. Fig 30. Fig 31. Fig 32. Fig 33. Fig 34. Fig 35. Fig 36. Fig 37. Fig 38. Fig 39. Fig 40. Functional block diagram . . . . . . . . . . . . . . . . . . . .2 Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . .3 LO input return loss variation (S11_LO). . . . . . . . .5 Typical wideband application diagram . . . . . . . . . 11 Typical low-power interface . . . . . . . . . . . . . . . . .12 Typical high-power interface . . . . . . . . . . . . . . . .12 Current consumption versus flo and Tmb . . . . . . .13 Po versus flo and Tmb . . . . . . . . . . . . . . . . . . . . . .14 Po versus flo and VCC . . . . . . . . . . . . . . . . . . . . . .14 Po versus flo and Pi(lo) . . . . . . . . . . . . . . . . . . . . .14 Po versus flo and Vi(cm) . . . . . . . . . . . . . . . . . . . . .14 Po versus baseband voltage at 2140 MHz. . . . . .15 PL(1dB) versus flo and Tmb . . . . . . . . . . . . . . . . . . .16 PL(1dB) versus flo and VCC . . . . . . . . . . . . . . . . . .16 PL(1dB) versus flo and Pi(lo) . . . . . . . . . . . . . . . . . .16 PL(1dB) versus flo and Vi(cm) . . . . . . . . . . . . . . . . .16 IP3o versus flo and Tmb . . . . . . . . . . . . . . . . . . . .17 IP3o versus flo and VCC . . . . . . . . . . . . . . . . . . . .17 IP3o versus flo and Pi(lo) . . . . . . . . . . . . . . . . . . . .17 IP3o versus flo and Vi(cm) . . . . . . . . . . . . . . . . . . .17 IP2o versus flo and Tmb . . . . . . . . . . . . . . . . . . . .18 IP2o versus flo and VCC . . . . . . . . . . . . . . . . . . . .18 IP2o versus flo and Pi(lo) . . . . . . . . . . . . . . . . . . . .18 IP2o versus flo and Vi(cm) . . . . . . . . . . . . . . . . . . .18 Unadjusted CF versus flo and Tmb . . . . . . . . . . . .19 Unadjusted CF versus flo and VCC . . . . . . . . . . . .19 Unadjusted CF versus flo and Pi(lo) . . . . . . . . . . .19 Unadjusted CF versus flo and Vi(cm) . . . . . . . . . . .19 Adjusted CF versus flo and Tmb after nulling at 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 Unadjusted SBS versus flo and Tmb . . . . . . . . . . .21 Unadjusted SBS versus flo and VCC . . . . . . . . . .21 Unadjusted SBS versus flo and Pi(lo) . . . . . . . . . .21 Unadjusted SBS versus flo and Vi(cm) . . . . . . . . .21 Adjusted SBS versus flo and Tmb after nulling at 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 Adjusted CF versus flo and Tmb (750 LTE band) .23 Adjusted CF versus flo and Tmb (GSM band). . . .23 Adjusted CF versus flo and Tmb (PCS band) . . . .23 Adjusted CF versus flo and Tmb (UMTS band) . . .23 Adjusted CF versus flo and Tmb (2.6 GHz LTE band) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24 Adjusted CF versus flo and Tmb (Wi MAX/LTE BGX7100 Product data sheet band) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Fig 41. Adjusted SBS versus flo and Tmb (750 LTE band) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Fig 42. Adjusted SBS versus flo and Tmb (GSM900 band) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Fig 43. Adjusted SBS versus flo and Tmb (PCS band). . . 25 Fig 44. Adjusted SBS versus flo and Tmb (UMTS band) . 25 Fig 45. Adjusted SBS versus flo and Tmb(2.6 GHz LTE band) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Fig 46. Adjusted SBS versus flo and Tmb (Wi MAX/LTE band) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Fig 47. Nflr(o) versus flo and Tmb . . . . . . . . . . . . . . . . . . . 27 Fig 48. Nflr(o) versus flo and supply voltage . . . . . . . . . . . 27 Fig 49. Nflr(o) versus flo and Pi(lo) . . . . . . . . . . . . . . . . . . . 27 Fig 50. Nflr(o) versus Po at Pi(lo) = 0 dBm and fRF = 2140 MHz with 30 MHz offset. . . . . . . . . . . 28 Fig 51. Nflr(o) versus Po at Pi(lo) = 0 dBm . . . . . . . . . . . . 28 Fig 52. IP3o, wanted, IM3, IM5 tone and noise floor . . . . 29 Fig 53. Package outline SOT616-3 (HVQFN24) . . . . . . . 30 Fig 54. Temperature profiles for large and small components. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 All information provided in this document is subject to legal disclaimers. Rev. 5 — 3 September 2012 © NXP B.V. 2012. All rights reserved. 37 of 38 BGX7100 NXP Semiconductors Transmitter IQ modulator 24. Contents 1 2 3 4 5 6 7 7.1 7.2 8 8.1 8.2 9 10 11 12 12.1 12.2 13 14 15 16 17 17.1 17.2 17.3 17.4 18 19 20 20.1 20.2 20.3 20.4 21 22 23 24 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device family . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 4 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Shutdown control . . . . . . . . . . . . . . . . . . . . . . . 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5 Thermal characteristics . . . . . . . . . . . . . . . . . . 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Application information. . . . . . . . . . . . . . . . . . 11 External DAC interfacing . . . . . . . . . . . . . . . . 11 RF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Test information . . . . . . . . . . . . . . . . . . . . . . . . 13 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Package information . . . . . . . . . . . . . . . . . . . . 29 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 30 Soldering of SMD packages . . . . . . . . . . . . . . 31 Introduction to soldering . . . . . . . . . . . . . . . . . 31 Wave and reflow soldering . . . . . . . . . . . . . . . 31 Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 31 Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 32 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 34 Legal information. . . . . . . . . . . . . . . . . . . . . . . 35 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 35 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Contact information. . . . . . . . . . . . . . . . . . . . . 36 Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 3 September 2012 Document identifier: BGX7100