BAP55L Silicon PIN diode Rev. 01 — 5 April 2005 Preliminary data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882 leadless ultra small plastic SMD package. 1.2 Features ■ High speed switching for RF signals ■ Low diode capacitance ■ Low forward resistance ■ Very low series inductance ■ For applications up to 3 GHz 1.3 Applications ■ RF attenuators and switches 2. Pinning information Table 1: Discrete pinning Pin Description 1 cathode 2 anode Simplified outline Symbol [1] 1 2 sym006 Transparent top view [1] The marking bar indicates the cathode. 3. Ordering information Table 2: Ordering information Type number Package BAP55L Name Description Version - leadless ultra small plastic package; 2 terminals; body 1.0 × 0.6 × 0.5 mm SOD882 BAP55L Philips Semiconductors Silicon PIN diode 4. Marking Table 3: Marking Type number Marking code BAP55L E6 5. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VR reverse voltage Conditions - 50 V IF forward current - 100 mA Ptot total power dissipation - 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C Typ Unit 100 K/W Ts = 90 °C 6. Thermal characteristics Table 5: Thermal characteristics Symbol Parameter Conditions Rth(j-sp) thermal resistance from junction to soldering point 7. Characteristics Table 6: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter VF forward voltage IR reverse current Cd rD diode capacitance diode forward resistance Conditions Min Typ Max Unit IF = 50 mA - 0.95 1.1 V VR = 20 V - - 10 nA VR = 50 V - - 0.1 µA VR = 0 V - 0.27 - pF VR = 1 V - 0.23 - pF VR = 20 V - 0.18 0.28 pF IF = 0.5 mA - 3.4 4.5 Ω IF = 1 mA - 2.3 3.3 Ω IF = 10 mA - 0.8 1.2 Ω IF = 100 mA - 0.4 0.7 Ω f = 1 MHz; Figure 2 f = 100 MHz; Figure 1 9397 750 14811 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 5 April 2005 2 of 8 BAP55L Philips Semiconductors Silicon PIN diode Table 6: Characteristics …continued Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions |s12|2 VR = 0 V; Figure 4 |s21|2 isolation insertion loss Min Typ Max Unit f = 900 MHz - 17.6 - dB f = 1800 MHz - 13 - dB f = 2450 MHz - 11.1 - dB f = 900 MHz - 0.25 - dB f = 1800 MHz - 0.27 - dB f = 2450 MHz - 0.29 - dB f = 900 MHz - 0.17 - dB f = 1800 MHz - 0.19 - dB f = 2450 MHz - 0.21 - dB f = 900 MHz - 0.07 - dB f = 1800 MHz - 0.09 - dB f = 2450 MHz - 0.12 - dB f = 900 MHz - 0.05 - dB f = 1800 MHz - 0.07 - dB f = 2450 MHz - 0.09 - dB - 0.28 - µs - 0.6 - nH IF = 0.5 mA; Figure 3 IF = 1 mA; Figure 3 IF = 10 mA; Figure 3 IF = 100 mA; Figure 3 τL charge carrier life time LS series inductance when switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA 9397 750 14811 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 5 April 2005 3 of 8 BAP55L Philips Semiconductors Silicon PIN diode 001aac628 102 001aac629 400 Cd (fF) rD (Ω) 300 10 200 1 100 10−1 10−1 1 102 10 0 0 5 10 15 IF (mA) f = 100 MHz; Tj = 25 °C. f = 1 MHz; Tj = 25 °C. Fig 1. Forward resistance as a function of forward current; typical values 001aac630 0 |S21|2 (dB) Fig 2. Diode capacitance as a function of reverse voltage; typical values 001aac631 0 (1) |S12|2 (dB) (2) (3) −0.25 20 VR (V) −10 (4) −0.50 −20 −0.75 −30 −1.00 −40 0 1 2 3 0 f (MHz) 1 2 3 f (MHz) Diode zero biased and inserted in series with a 50 Ω stripline circuit. (1) IF = 100 mA. (2) IF = 10 mA. Tamb = 25 °C. (3) IF = 1 mA. (4) IF = 0.5 mA. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb = 25 °C. Fig 3. Insertion loss (|s21|2) of the diode as a function of frequency; typical values Fig 4. Isolation (|s12|2) of the diode as a function of frequency; typical values 9397 750 14811 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 5 April 2005 4 of 8 BAP55L Philips Semiconductors Silicon PIN diode 8. Package outline Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm L SOD882 L 1 2 b e1 A A1 E D (2) 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b D E e1 L mm 0.50 0.46 0.03 0.55 0.47 0.62 0.55 1.02 0.95 0.65 0.30 0.22 Notes 1. Including plating thickness 2. The marking bar indicates the cathode OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-04-16 03-04-17 SOD882 Fig 5. Package outline SOD882 9397 750 14811 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 5 April 2005 5 of 8 BAP55L Philips Semiconductors Silicon PIN diode 9. Revision history Table 7: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BAP55L_1 20050405 Preliminary data sheet - 9397 750 14811 - 9397 750 14811 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 5 April 2005 6 of 8 BAP55L Philips Semiconductors Silicon PIN diode 10. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions 12. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14811 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 5 April 2005 7 of 8 BAP55L Philips Semiconductors Silicon PIN diode 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description. . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . . . . . . . . . . . . . Ordering information . . . . . . . . . . . . . . . . . . . . . Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . Thermal characteristics. . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . Package outline . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information . . . . . . . . . . . . . . . . . . . . . 1 1 1 1 1 1 2 2 2 2 5 6 7 7 7 7 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 5 April 2005 Document number: 9397 750 14811 Published in The Netherlands