Features • Fast Read Access Time – 70 ns • 5-volt Only Reprogramming • Page Program Operation • • • • • • • • • – Single Cycle Reprogram (Erase and Program) – Internal Address and Data Latches for 64 Bytes Internal Program Control and Timer Hardware and Software Data Protection Fast Program Cycle Times – Page (64 Byte) Program Time – 10 ms – Chip Erase Time – 10 ms DATA Polling for End of Program Detection Low-power Dissipation – 50 mA Active Current – 300 µA CMOS Standby Current Typical Endurance > 10,000 Cycles Single 5V ± 10% Supply CMOS and TTL Compatible Inputs and Outputs Commercial and Industrial Temperature Ranges 256K (32K x 8) 5-volt Only Flash Memory AT29C256 Description The AT29C256 is a five-volt-only in-system Flash programmable and erasable read only memory (PEROM). Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 275 mW. When the device is deselected, the CMOS standby current is less than 300 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. TSOP Top View Type 1 Pin Configurations Pin Name Function A0 - A14 Addresses CE Chip Enable OE Output Enable WE Write Enable I/O0 - I/O7 Data Inputs/Outputs NC No Connect DC Don’t Connect OE A11 A9 A8 A13 A14 VCC WE A12 A7 A6 A5 A4 A3 22 23 24 25 26 27 28 1 2 3 4 5 6 7 21 20 19 18 17 16 15 14 13 12 11 10 9 8 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 29 28 27 26 25 24 23 22 21 14 15 16 17 18 19 20 5 6 7 8 9 10 11 12 13 A8 A9 A11 NC OE A10 CE I/O7 I/O6 I/O1 I/O2 GND DC I/O3 I/O4 I/O5 A6 A5 A4 A3 A2 A1 A0 NC I/O0 4 3 2 1 32 31 30 A7 A12 WE DC VCC A14 A13 PLCC and LCC Top View Note: PLCC package pins 1 and 17 are DON’T CONNECT. Rev. 0046P–FLASH–10/04 1 To allow for simple in-system reprogrammability, the AT29C256 does not require high input voltages for programming. Five-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from a static RAM. Reprogramming the AT29C256 is performed on a page basis; 64 bytes of data are loaded into the device and then simultaneously programmed. The contents of the entire device may be erased by using a six-byte software code (although erasure before programming is not needed). During a reprogram cycle, the address locations and 64 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a program cycle, the device will automatically erase the page and then program the latched data using an internal control timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the end of a program cycle has been detected a new access for a read, program or chip erase can begin. Block Diagram Device Operation READ: The AT29C256 is accessed like a static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high impedance state whenever CE or OE is high. This dual-line control gives designers flexibility in preventing bus contention. BYTE LOAD: A byte load is performed by applying a low pulse on the WE or CE input with CE or WE low (respectively) and OE high. The address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the first rising edge of CE or WE. Byte loads are used to enter the 64 bytes of a page to be programmed or the software codes for data protection and chip erasure. 2 AT29C256 0046P–FLASH–10/04 AT29C256 PROGRAM: The device is reprogrammed on a page basis. If a byte of data within a page is to be changed, data for the entire page must be loaded into the device. Any byte that is not loaded during the programming of its page will be indeterminate. Once the bytes of a page are loaded into the device, they are simultaneously programmed during the internal programming period. After the first data byte has been loaded into the device, successive bytes are entered in the same manner. Each new byte to be programmed must have its high-to-low transition on WE (or CE) within 150 µs of the low-tohigh transition of WE (or CE) of the preceding byte. If a high-to-low transition is not detected within 150 µs of the last low-to-high transition, the load period will end and the internal programming period will start. A6 to A14 specify the page address. The page address must be valid during each high-to-low transition of WE (or CE). A0 to A5 specify the byte address within the page. The bytes may be loaded in any order; sequential loading is not required. Once a programming operation has been initiated, and for the duration of tWC, a read operation will effectively be a polling operation. SOFTWARE DATA PROTECTION: A software controlled data protection feature is available on the AT29C256. Once the software protection is enabled a software algorithm must be issued to the device before a program may be performed. The software protection feature may be enabled or disabled by the user; when shipped from Atmel, the software data protection feature is disabled. To enable the software data protection, a series of three program commands to specific addresses with specific data must be performed. After the software data protection is enabled the same three program commands must begin each program cycle in order for the programs to occur. All software program commands must obey the page program timing specifications. Once set, the software data protection feature remains active unless its disable command is issued. Power transitions will not reset the software data protection feature, however the software feature will guard against inadvertent program cycles during power transitions. Once set, software data protection will remain active unless the disable command sequence is issued. After setting SDP, any attempt to write to the device without the three-byte command sequence will start the internal write timers. No data will be written to the device; however, for the duration of tWC, a read operation will effectively be a polling operation. After the software data protection’s three-byte command code is given, a byte load is performed by applying a low pulse on the WE or CE input with CE or WE low (respectively) and OE high. The address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the first rising edge of CE or WE. The 64 bytes of data must be loaded into each sector by the same procedure as outlined in the program section under device operation. HARDWARE DATA PROTECTION: Hardware features protect against inadvertent programs to the AT29C256 in the following ways: (a) VCC sense – if VCC is below 3.8V (typical), the program function is inhibited; (b) V CC power on delay – once V CC has reached the VCC sense level, the device will automatically time out 5 ms (typical) before programming; (c) Program inhibit – holding any one of OE low, CE high or WE high inhibits program cycles; and (d) Noise filter – pulses of less than 15 ns (typical) on the WE or CE inputs will not initiate a program cycle. 3 0046P–FLASH–10/04 PRODUCT IDENTIFICATION: The product identification mode identifies the device and manufacturer and may be accessed by a hardware operation. For details, see Operating Modes or Product Identification. DATA POLLING: The AT29C256 features DATA polling to indicate the end of a program cycle. During a program cycle an attempted read of the last byte loaded will result in the complement of the loaded data on I/O7. Once the program cycle has been completed, true data is valid on all outputs and the next cycle may begin. DATA polling may begin at any time during the program cycle. TOGGLE BIT: In addition to DATA polling the AT29C256 provides another method for determining the end of a program or erase cycle. During a program or erase operation, successive attempts to read data from the device will result in I/O6 toggling between one and zero. Once the program cycle has completed, I/O6 will stop toggling and valid data will be read. Examining the toggle bit may begin at any time during a program cycle. OPTIONAL CHIP ERASE MODE: The entire device can be erased by using a six-byte software code. Please see Software Chip Erase application note for details. Absolute Maximum Ratings* Temperature Under Bias................................ -55°C to +125°C Storage Temperature ..................................... -65°C to +150°C All Input Voltages (including NC Pins) with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground .............................-0.6V to VCC + 0.6V *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Voltage on OE with Respect to Ground ...................................-0.6V to +13.5V 4 AT29C256 0046P–FLASH–10/04 AT29C256 DC and AC Operating Range Operating Temperature (Case) Com. Ind. VCC Power Supply Note: AT29C256-70 AT29C256-90 AT29C256-12 AT29C256-15 0°C - 70°C 0°C - 70°C 0°C - 70°C 0°C - 70°C -40°C - 85°C -40°C - 85°C -40°C - 85°C -40°C - 85°C 5V ± 5% 5V± 10% 5V± 10% 5V± 10% Not recommended for New Designs. Operating Modes Mode Read Program (2) 5V Chip Erase Standby/Write Inhibit CE OE WE Ai I/O VIL VIL VIH Ai DOUT VIL VIH VIL Ai DIN VIL VIH VIL Ai X (1) VIH X X Write Inhibit X X VIH Write Inhibit X VIL X Output Disable X VIH X VIL VH(3) VIL X VIL VIL VIH A1-A14 = VIL, A9 = VH, A0 = VIL Manufacturer Code(4) A1-A14 = VIL, A9 = VH, A0 = VIH Device Code(4) High Voltage Chip Erase High Z High Z High Z Product Identification Hardware Software(5) Notes: 1. 2. 3. 4. 5. A0 = VIL Manufacturer Code(4) A0 = VIH Device Code(4) X can be VIL or VIH. Refer to AC Programming Waveforms. VH = 12.0V ± 0.5V. Manufacturer Code: 1F, Device Code: DC. See details under Software Product Identification Entry/Exit. DC Characteristics Symbol Parameter Condition ILI Input Load Current ILO Min Max Units VIN = 0V to VCC 10 µA Output Leakage Current VI/O = 0V to VCC 10 µA ISB1 VCC Standby Current CMOS CE = VCC - 0.3V to VCC 300 µA ISB2 VCC Standby Current TTL CE = 2.0V to VCC 3 mA ICC VCC Active Current f = 5 MHz; IOUT = 0 mA 50 mA VIL Input Low Voltage 0.8 V VIH Input High Voltage VOL Output Low Voltage IOL = 2.1 mA VOH1 Output High Voltage IOH = -400 µA 2.4 V VOH2 Output High Voltage CMOS IOH = -100 µA; VCC = 4.5V 4.2 V 2.0 V 0.45 V 5 0046P–FLASH–10/04 AC Read Characteristics Symbol Parameter tACC AT29C256-70 AT29C256-90 AT29C256-12 AT29C256-15 Min Min Min Min Max Max Max Max Units Address to Output Delay 70 90 120 150 ns (1) CE to Output Delay 70 90 120 150 ns tOE(2) OE to Output Delay 0 40 0 40 0 50 0 70 ns tDF(3)(4) CE or OE to Output Float 0 25 0 25 0 30 0 40 ns tOH Output Hold from OE, CE or Address, whichever occurred first 0 tCE Note: 0 0 0 ns Not recommended for New Designs. AC Read Waveforms(1)(2)(3)(4) Notes: 6 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC. 2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change without impact on tACC. 3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF). 4. This parameter is characterized and is not 100% tested. AT29C256 0046P–FLASH–10/04 AT29C256 Input Test Waveforms and Measurement Level tR, tF < 5 ns Output Test Load Pin Capacitance f = 1 MHz, T = 25°C(1) Symbol Typ Max Units Conditions CIN 4 6 pF VIN = 0V COUT 8 12 pF VOUT = 0V Note: 1. This parameter is characterized and is not 100% tested. 7 0046P–FLASH–10/04 AC Byte Load Characteristics Symbol Parameter Min Max Units tAS, tOES Address, OE Set-up Time 0 ns tAH Address Hold Time 50 ns tCS Chip Select Set-up Time 0 ns tCH Chip Select Hold Time 0 ns tWP Write Pulse Width (WE or CE) 90 ns tDS Data Set-up Time 35 ns tDH,tOEH Data, OE Hold Time 0 ns tWPH Write Pulse Width High 100 ns AC Byte Load Waveforms WE Controlled CE Controlled 8 AT29C256 0046P–FLASH–10/04 AT29C256 Program Cycle Characteristics Symbol Parameter Min Max Units tWC Write Cycle Time 10 ms tAS Address Set-up Time 0 ns tAH Address Hold Time 50 ns tDS Data Set-up Time 35 ns tDH Data Hold Time 0 ns tWP Write Pulse Width 90 ns tBLC Byte Load Cycle Time tWPH Write Pulse Width High 150 100 µs ns Program Cycle Waveforms(1)(2)(3) Notes: 1. A6 through A14 must specify the page address during each high-to-low transition of WE (or CE). 2. OE must be high when WE and CE are both low. 3. All bytes that are not loaded within the page being programmed will be indeterminate. 9 0046P–FLASH–10/04 Software Data Protection Enable Algorithm(1) LOAD DATA AA TO ADDRESS 5555 LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA A0 TO ADDRESS 5555 WRITES ENABLED(2) LOAD DATA 80 TO ADDRESS 5555 ENTER DATA PROTECT STATE LOAD DATA AA TO ADDRESS 5555 LOAD DATA TO PAGE (64 BYTES)(4) Notes: Software Data Protection Disable Algorithm(1) 1. Data Format: I/O7 - I/O0 (Hex); Address Format: A14 - A0 (Hex). 2. Data Protect state will be re-activated at end of program cycle. 3. Data Protect state will be deactivated at end of program period. 4. 64 bytes of data MUST BE loaded. LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA 20 TO ADDRESS 5555 EXIT DATA PROTECT STATE(3) LOAD DATA TO PAGE (64 BYTES)(4) Software Protected Program Cycle Waveform(1)(2)(3) Notes: 10 1. A6 through A14 must specify the page address during each high-to-low transition of WE (or CE) after the software code has been entered. 2. OE must be high when WE and CE are both low. 3. All bytes that are not loaded within the page being programmed will be indeterminate. AT29C256 0046P–FLASH–10/04 AT29C256 Data Polling Characteristics(1) Symbol Parameter tDH Data Hold Time 0 ns tOEH OE Hold Time 10 ns tOE OE to Output Delay(2) tWR Write Recovery Time Notes: Min Typ Max Units ns 0 ns 1. These parameters are characterized and not 100% tested. 2. See tOE spec in AC Read Characteristics. Data Polling Waveforms Toggle Bit Characteristics(1) Symbol Parameter tDH Data Hold Time tOEH OE Hold Time Min OE to Output Delay tOEHP OE High Pulse tWR Write Recovery Time Notes: Max Units 0 ns 10 ns (2) tOE Typ ns 150 ns 0 ns 1. These parameters are characterized and not 100% tested. 2. See tOE spec in AC Read Characteristics. Toggle Bit Waveforms(1)(2)(3) Notes: 1. Toggling either OE or CE or both OE and CE will operate toggle bit. 2. Beginning and ending state of I/O6 will vary. 3. Any address location may be used but the address should not vary. 11 0046P–FLASH–10/04 Software Product Identification Entry(1) LOAD DATA AA TO ADDRESS 5555 LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA 90 TO ADDRESS 5555 LOAD DATA F0 TO ADDRESS 5555 PAUSE 10 mS Notes: 12 Software Product Identification Exit(1) ENTER PRODUCT IDENTIFICATION MODE(2)(3)(5) PAUSE 10 mS EXIT PRODUCT IDENTIFICATION MODE(4) 1. Data Format: I/O7 - I/O0 (Hex); Address Format: A14 - A0 (Hex). 2. A1 - A14 = VIL. Manufacturer Code is read for A0 = VIL; Device Code is read for A0 = VIH. 3. The device does not remain in identification mode if powered down. 4. The device returns to standard operation mode. 5. Manufacturer Code is 1F. The Device Code is DC. AT29C256 0046P–FLASH–10/04 AT29C256 NORMALIZED SUPPLY CURRENT vs. TEMPERATURE 1.4 N O R M A L I Z E D 1.3 1.2 1.1 1.0 I 0.9 C C 0.8 -55 -25 5 35 65 95 125 TEMPERATURE (C) NORMALIZED SUPPLY CURRENT vs. ADDRESS FREQUENCY 1.1 N O R M 1.0 A L I 0.9 Z E D I C C VCC = 5V T = 25C 0.8 0.7 0 1 2 3 4 5 6 7 FREQUENCY (MHz) NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGE 1.4 N O R M 1.2 A L I 1.0 Z E D I C C 0.8 0.6 4.50 4.75 5.00 5.25 5.50 SUPPLY VOLTAGE (V) 13 0046P–FLASH–10/04 Ordering Information ICC (mA) tACC (ns) Active Standby Ordering Code Package 70 50 0.3 AT29C256-70JC AT29C256-70TC 32J 28T Commercial (0° to 70°C) AT29C256-70JI AT29C256-70TI 32J 28T Industrial (-40° to 85°C) AT29C256-90JC AT29C256-90TC 32J 28T Commercial (0° to 70°C) AT29C256-90JI AT29C256-90TI 32J 28T Industrial (-40° to 85°C) AT29C256-12JC AT29C256-12TC 32J 28T Commercial (0° to 70°C) AT29C256-12JI AT29C256-12TI 32J 28T Industrial (-40° to 85°C) AT29C256-15JC AT29C256-15TC 32J 28T Commercial (0° to 70°C) AT29C256-15JI AT29C256-15TI 32J 28T Industrial (-40° to 85°C) 90 120 150 Note: 50 50 50 0.3 0.3 0.3 Operation Range Not recommended for New Designs. Package Type 32J 32-Lead, Plastic J-Leaded Chip Carrier (PLCC) 28T 28-lead, Plastic Thin Small Outline Package (TSOP) 14 AT29C256 0046P–FLASH–10/04 AT29C256 Packaging Information 32J – PLCC 1.14(0.045) X 45˚ PIN NO. 1 IDENTIFIER 1.14(0.045) X 45˚ 0.318(0.0125) 0.191(0.0075) E1 E2 B1 E B e A2 D1 A1 D A 0.51(0.020)MAX 45˚ MAX (3X) COMMON DIMENSIONS (Unit of Measure = mm) D2 Notes: 1. This package conforms to JEDEC reference MS-016, Variation AE. 2. Dimensions D1 and E1 do not include mold protrusion. Allowable protrusion is .010"(0.254 mm) per side. Dimension D1 and E1 include mold mismatch and are measured at the extreme material condition at the upper or lower parting line. 3. Lead coplanarity is 0.004" (0.102 mm) maximum. SYMBOL MIN NOM MAX A 3.175 – 3.556 A1 1.524 – 2.413 A2 0.381 – – D 12.319 – 12.573 D1 11.354 – 11.506 D2 9.906 – 10.922 E 14.859 – 15.113 E1 13.894 – 14.046 E2 12.471 – 13.487 B 0.660 – 0.813 B1 0.330 – 0.533 e NOTE Note 2 Note 2 1.270 TYP 10/04/01 R 2325 Orchard Parkway San Jose, CA 95131 TITLE 32J, 32-lead, Plastic J-leaded Chip Carrier (PLCC) DRAWING NO. REV. 32J B 15 0046P–FLASH–10/04 28T – TSOP PIN 1 0º ~ 5º c Pin 1 Identifier Area D1 D L b e L1 A2 E A GAGE PLANE SEATING PLANE COMMON DIMENSIONS (Unit of Measure = mm) A1 MIN NOM MAX A – – 1.20 A1 0.05 – 0.15 A2 0.90 1.00 1.05 D 13.20 13.40 13.60 D1 11.70 11.80 11.90 Note 2 E 7.90 8.00 8.10 Note 2 L 0.50 0.60 0.70 SYMBOL Notes: 1. This package conforms to JEDEC reference MO-183. 2. Dimensions D1 and E do not include mold protrusion. Allowable protrusion on E is 0.15 mm per side and on D1 is 0.25 mm per side. 3. Lead coplanarity is 0.10 mm maximum. L1 NOTE 0.25 BASIC b 0.17 0.22 0.27 c 0.10 – 0.21 e 0.55 BASIC 12/06/02 R 16 2325 Orchard Parkway San Jose, CA 95131 TITLE 28T, 28-lead (8 x 13.4 mm) Plastic Thin Small Outline Package, Type I (TSOP) DRAWING NO. REV. 28T C AT29C256 0046P–FLASH–10/04 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Biometrics/Imaging/Hi-Rel MPU/ High Speed Converters/RF Datacom Avenue de Rochepleine BP 123 38521 Saint-Egreve Cedex, France Tel: (33) 4-76-58-30-00 Fax: (33) 4-76-58-34-80 Zone Industrielle 13106 Rousset Cedex, France Tel: (33) 4-42-53-60-00 Fax: (33) 4-42-53-60-01 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 0QR, Scotland Tel: (44) 1355-803-000 Fax: (44) 1355-242-743 Literature Requests www.atmel.com/literature Disclaimer: The information in this document is provided in connection with Atmel products. No license, express or implied, by estoppel or otherwise, to any intellectual property right is granted by this document or in connection with the sale of Atmel products. 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