Features • Permanent and Reversible Software Write Protection for the First-half of the Array – Software Procedure to Verify Write Protect Status • Hardware Write Protection for the Entire Array • Low-voltage and Standard-voltage Operation • • • • • • • • • • • – 1.7 (VCC = 1.7V to 5.5V) Internally Organized 256 x 8 Two-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bidirectional Data Transfer Protocol 100 kHz (1.7V) and 400 kHz (2.7V and 5.0V) Compatibility 16-byte Page Write Modes Partial Page Writes Are Allowed Self-timed Write Cycle (5 ms max) High-reliability – Endurance: 1 Million Write Cycles – Data Retention: 100 Years 8-lead JEDEC SOIC, 8-lead Ultra Thin Mini-MAP (MLP 2x3), 8-lead TSSOP, and 8-ball dBGA2 Packages Die Sales: Wafer Form, Tape and Reel, and Bumped Wafers Two-wire Serial EEPROM with Permanent and Reversible Software Write Protect 2K (256 x 8) Description The AT34C02C provides 2048 bits of serial electrically-erasable and programmable read only memory (EEPROM) organized as 256 words of 8 bits each. The first-half of the device incorporates a permanent and a reversible software write protection feature while hardware write protection for the entire array is available via an external pin. Once the permanent software write protection is enabled, by sending a special command to the device, it cannot be reversed. However, the reversible software write protection is enabled and can be reversed by sending a special command. The hardware write protection is controlled with the WP pin and can be used to protect the entire array, whether or not the software write protection has been enabled. This allows the user to protect none, first-half, or all of the array depending on the application. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operations are essential. The AT34C02C is available in space saving 8-lead JEDEC SOIC, 8-lead Ultra Thin Mini-MAP (MLP 2x3), 8-lead TSSOP, and 8-ball dBGA2 packages and is accessed via a Two-wire serial interface. It is available in 1.7V (1.7V to 5.5V). AT34C02C 8-lead Ultra Thin Mini-MAP 8-ball dBGA2 8-lead TSSOP A0 A1 A2 GND 1 2 3 4 8 7 6 5 VCC WP SCL SDA VCC WP SCL SDA 8 1 7 2 6 3 5 4 A0 A1 A2 GND Bottom View 8 7 6 5 VCC WP SCL SDA 1 2 3 4 A0 A1 A2 GND (MLP 2x3) Bottom View 8-lead SOIC A0 A1 A2 GND 1 2 3 4 8 7 6 5 VCC WP SCL SDA Rev. 5185D–SEEPR–1/08 Table 0-1. Pin Configurations Pin Name Function A0 - A2 Address Inputs SDA Serial Data SCL Serial Clock Input WP Write Protect 1. Absolute Maximum Ratings* Operating Temperature..................................–55°C to +125 °C *NOTICE: Storage Temperature .....................................–65°C to +150°C Voltage on Any Pin with Respect to Ground .................................... –1.0V to +7.0V Maximum Operating Voltage .......................................... 6.25V DC Output Current........................................................ 5.0 mA Figure 1-1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Block Diagram VCC GND WP START STOP LOGIC SCL SDA SERIAL CONTROL LOGIC WRITE PROTECT CIRCUITRY EN H.V. PUMP/TIMING LOAD A2 A1 A0 R/W COMP LOAD DATA WORD ADDR/COUNTER DATA RECOVERY SOFTWARE WRITE PROTECTED AREA (00H - 7FH) INC X DEC DEVICE ADDRESS COMPARATOR EEPROM Y DEC DIN SERIAL MUX DOUT/ACK LOGIC DOUT 2 AT34C02C 5185D–SEEPR–1/08 AT34C02C 2. Pin Description SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each EEPROM device and negative edge clock data out of each device. SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is opendrain driven and may be wire-ORed with any number of other open-drain or open collector devices. DEVICE/PAGE ADDRESSES (A2, A1, A0): The A2, A1, and A0 pins are device address inputs that are hardwired (directly to GND or to Vcc) for compatibility with other AT24Cxx devices. When the pins are hardwired, as many as eight 2K devices may be addressed on a single bus system. (Device addressing is discussed in detail under “Device Addressing,” page 9.) A device is selected when a corresponding hardware and software match is true. If these pins are left floating, the A2, A1, and A0 pins will be internally pulled down to GND. However, due to capacitive coupling that may appear during customer applications, Atmel recommends always connecting the address pins to a known state. When using a pull-up resistor, Atmel recommends using 10kΩ or less. WRITE PROTECT (WP): The write protect input, when connected to GND, allows normal write operations. When WP is connected directly to Vcc, all write operations to the memory are inhibited. If the pin is left floating, the WP pin will be internally pulled down to GND. However, due to capacitive coupling that may appear during customer applications, Atmel recommends always connecting the WP pins to a known state. When using a pull-up resistor, Atmel recommends using 10kΩ or less. Table 2-1. AT34C02C Write Protection Modes WP Pin Status Permanent Write Protect Register Reversible Write Protect Register Part of the Array Write Protected VCC – – Full Array (2K) GND or Floating Not Programmed Not Programmed Normal Read/Write GND or Floating Programmed – First-Half of Array (1K: 00H - 7FH) GND or Floating – Programmed First-Half of Array (1K: 00H - 7FH) Table 2-2. Pin Capacitance(1) Applicable over recommended operating range from TA = 25°C, f = 100 kHz, VCC = +1.7V Symbol Test Condition CI/O CIN Note: Max Units Conditions Input/Output Capacitance (SDA) 8 pF VI/O = 0V Input Capacitance (A0, A1, A2, SCL) 6 pF VIN = 0V 1. This parameter is characterized and is not 100% tested. 3 5185D–SEEPR–1/08 Table 2-3. DC Characteristics Applicable over recommended operating range from: TAI = –40°C to +85°C, VCC = +1.7V to +5.5V, (unless otherwise noted) Symbol Parameter Test Condition VCC Supply Voltage ICC Supply Current VCC = 5.0V READ at 100 kHz ICC Supply Current VCC = 5.0V ISB1 Max Units 5.5 V 0.4 1.0 mA WRITE at 100 kHz 2.0 3.0 mA Standby Current VCC = 1.7V VIN = VCC or VSS 0.6 3.0 µA ISB2 Standby Current VCC = 3.6V VIN = VCC or VSS 1.6 4.0 µA ISB3 Standby Current VCC = 5.5V VIN = VCC or VSS 8.0 18.0 µA ILI Input Leakage Current VIN = VCC or VSS 0.10 3.0 µA ILO Output Leakage Current VOUT = VCC or VSS 0.05 3.0 µA Typ 1.7 (1) –0.6 VCC x 0.3 V (1) VCC x 0.7 VCC + 0.5 V Input Low Level VIL Min VIH Input High Level VOL2 Output Low Level VCC = 3.0V IOL = 2.1 mA 0.4 V Output Low Level VCC = 1.7V IOL = 0.15 mA 0.2 V VOL1 Note: 1. VIL min and VIH max are reference only and are not tested. Table 2-4. AC Characteristics Applicable over recommended operating range from TAI = –40°C to +85°C, VCC = +1.7V to +5.5V, CL = 1 TTL Gate and 100 pF (unless otherwise noted) 1.7V Symbol Parameter Min fSCL Clock Frequency, SCL tLOW Clock Pulse Width Low tHIGH Clock Pulse Width High 2.7V, 5.0V Max Min 100 Max Units 400 kHz 4.7 1.2 µs 4.0 0.6 µs (1) tI Noise Suppression Time 100 tAA Clock Low to Data Out Valid 0.1 tBUF Time the bus must be free before a new transmission can start(1) 4.7 1.2 µs tHD.STA Start Hold Time 4.0 0.6 µs tSU.STA Start Set-up Time 4.7 0.6 µs tHD.DAT Data In Hold Time 0 0 µs tSU.DAT Data In Set-up Time 200 100 ns (1) 4.5 0.1 50 ns 0.9 µs tR Inputs Rise Time 1.0 0.3 µs tF Inputs Fall Time(1) 300 300 ns tSU.STO Stop Set-up Time 4 4.7 0.6 µs AT34C02C 5185D–SEEPR–1/08 AT34C02C Table 2-4. AC Characteristics Applicable over recommended operating range from TAI = –40°C to +85°C, VCC = +1.7V to +5.5V, CL = 1 TTL Gate and 100 pF (unless otherwise noted) 1.7V Symbol Parameter Min tDH Data Out Hold Time 100 tWR Write Cycle Time Endurance(1) 25°C, Page Mode Note: 2.7V, 5.0V Max Min 50 5 1M Max ns 5 1M Units ms Write Cycles 1. This parameter is characterized and is not 100% tested. 3. Memory Organization AT34C02C, 2K Serial EEPROM: The 2K is internally organized with 16 pages of 16 bytes each. Random word addressing requires a 8-bit data word address. 5 5185D–SEEPR–1/08 4. Device Operation CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external device. Data on the SDA pin may change only during SCL low time periods (see Figure 4-3 on page 7). Data changes during SCL high periods will indicate a start or stop condition as defined below. START CONDITION: A high-to-low transition of SDA with SCL high is a start condition which must precede any other command (see Figure 4-4 on page 7). STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a read sequence, the stop command will place the EEPROM in a standby power mode (see Figure 4-4 on page 7). ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the EEPROM in 8-bit words. The EEPROM sends a zero to acknowledge that it has received each word. This happens during the ninth clock cycle. STANDBY MODE: The AT34C02C features a low-power standby mode which is enabled: (a) upon power-up or (b) after the receipt of the STOP bit and the completion of any internal operations. MEMORY RESET: After an interruption in protocol, power loss or system reset, any Two-wire part can be reset by following these steps: (a) Clock up to 9 cycles, (b) look for SDA high in each cycle while SCL is high and then (c) create a start condition. Figure 4-1. 6 Bus Timing SCL: Serial Clock SDA: Serial Data I/O AT34C02C 5185D–SEEPR–1/08 AT34C02C Figure 4-2. Write Cycle Timing SCL: Serial Clock SDA: Serial Data I/O SCL SDA 8th BIT ACK WORDn (1) twr STOP CONDITION Note: START CONDITION 1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle. Figure 4-3. Data Validity Figure 4-4. Start and Stop Condition 7 5185D–SEEPR–1/08 Figure 4-5. Output Acknowledge 5. Device Addressing The 2K EEPROM device requires an 8-bit device address word following a start condition to enable the chip for a read or write operation (see Figure 8-1 on page 13). The device address word consists of a mandatory one-zero sequence for the first four most-significant bits (1010) for normal read and write operations and 0110 for writing to the write protect register. The next 3 bits are the A2, A1 and A0 device address bits for the AT34C02C EEPROM. These 3 bits must compare to their corresponding hard-wired input pins. The eighth bit of the device address is the read/write operation select bit. A read operation is initiated if this bit is high and a write operation is initiated if this bit is low. Upon a compare of the device address, the EEPROM will output a zero. If a compare is not made, the chip will return to a standby state. The device will not acknowledge if the write protect register has been programmed and the control code is 0110. 6. Write Operations BYTE WRITE: A write operation requires an 8-bit data word address following the device address word and acknowledgment. Upon receipt of this address, the EEPROM will again respond with a zero and then clock in the first 8-bit data word. Following receipt of the 8-bit data word, the EEPROM will output a zero and the addressing device, such as a microcontroller, must terminate the write sequence with a stop condition. At this time the EEPROM enters an internally-timed write cycle, tWR, to the nonvolatile memory. All inputs are disabled during this write cycle and the EEPROM will not respond until the write is complete (see Figure 8-2 on page 13). The device will acknowledge a write command, but not write the data, if the software or hardware write protection has been enabled. The write cycle time must be observed even when the write protection is enabled. PAGE WRITE: The 2K device is capable of 16-byte page write. 8 AT34C02C 5185D–SEEPR–1/08 AT34C02C A page write is initiated the same as a byte write, but the microcontroller does not send a stop condition after the first data word is clocked in. Instead, after the EEPROM acknowledges receipt of the first data word, the microcontroller can transmit up to fifteen more data words. The EEPROM will respond with a zero after each data word received. The microcontroller must terminate the page write sequence with a stop condition (see Figure 1 on page 13). The data word address lower four bits are internally incremented following the receipt of each data word. The higher data word address bits are not incremented, retaining the memory page row location. When the word address, internally generated, reaches the page boundary, the following byte is placed at the beginning of the same page. If more than sixteen data words are transmitted to the EEPROM, the data word address will “roll over” and previous data will be overwritten. The address “roll over” during write is from the last byte of the current page to the first byte of the same page. The device will acknowledge a write command, but not write the data, if the software or hardware write protection has been enabled. The write cycle time must be observed even when the write protection is enabled. ACKNOWLEDGE POLLING: Once the internally-timed write cycle has started and the EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a start condition followed by the device address word. The read/write bit is representative of the operation desired. Only if the internal write cycle has completed will the EEPROM respond with a zero allowing the read or write sequence to continue. 7. Write Protection The software write protection, once enabled, write protects only the first-half of the array (00H 7FH) while the hardware write protection, via the WP pin, is used to protect the entire array. PERMANENT SOFTWARE WRITE PROTECTION: The software write protection is enabled by sending a command, similar to a normal write command, to the device which programs the permanent write protect register. This must be done with the WP pin low. The write protect register is programmed by sending a write command with the device address of 0110 instead of 1010 with the address and data bit being don’t cares (see Figure 7-1 on page 10). Once the software write protection has been enabled, the device will no longer acknowledge the 0110 control byte. The software write protection cannot be reversed even if the device is powered down. The write cycle time must be observed. REVERSIBLE SOFTWARE WRITE PROTECTION: The reversible software write protection is enabled by sending a command, similar to a normal write command, to the device which programs the reversible write protect register. This must be done with the WP pin low. The write protect register is programmed by sending a write command 01100010 with pins A2 and A1 tied to ground or don't connect and pin A0 connected to VHV (see Figure 7-2). The reversible write protection can be reversed by sending a command 01100110 with pin A2 tied to ground or no connect, pin A1 tied to VCC and pin A0 tied to VHV (see Figure 7-3). HARDWARE WRITE PROTECTION: The WP pin can be connected to VCC, GND, or left floating. Connecting the WP pin to VCC will write protect the entire array, regardless of whether or not the software write protection has been enabled. The software write protection register cannot be programmed when the WP pin is connected to VCC. If the WP pin is connected to GND or left floating, the write protection mode is determined by the status of the software write protect register. 9 5185D–SEEPR–1/08 Figure 7-1. Setting Permanent Write Protect Register (PSWP) S T A R T SDA LINE CONTROL BYTE WORD ADDRESS S T O P DATA 0 1 1 0 A2 A1 A0 0 A C K A C K A C K = Don't Care Figure 7-2. Setting Reversible Write Protect Register (RSWP) S T A R T SDA LINE CONTROL BYTE WORD ADDRESS S T O P DATA 0 1 1 0 0 0 1 0 A C K A C K A C K = Don't Care Figure 7-3. Clearing Reversible Write Protect Register (RSWP) S T A R T SDA LINE CONTROL BYTE WORD ADDRESS S T O P DATA 0 1 1 0 0 1 1 0 A C K A C K A C K = Don't Care Table 7-1. Write Protection Pin RW Command A2 A1 A0 B7 B6 B5 B4 B3 B2 B1 B0 Set PSWP A2 A1 A0 0 1 1 0 A2 A1 A0 0 Set RSWP 0 0 VHV 0 1 1 0 0 0 1 0 Clear RSWP 0 1 VHV 0 1 1 0 0 1 1 0 Table 7-2. VHV VHV Note: 10 Preamble Min Max Units 7 10 V VHV - VCC > 4.8V AT34C02C 5185D–SEEPR–1/08 AT34C02C Table 7-3. WP Connected to GND or Floating WP Connected to GND or Floating Command R/W Bit Permanent Write Protect Register PSWP 1010 R X X ACK 1010 W Programmed X ACK Can write to second Half (80H - FFH) only 1010 W X Programmed ACK Can write to second Half (80H - FFH) only 1010 W Not Programmed Not Programmed ACK Can write to full array Read PSWP R Programmed X No ACK STOP - Indicates permanent write protect register is programmed Read PSWP R Not Programmed X ACK Read out data don't care. Indicates PSWP register is not programmed Set PSWP W Programmed X No ACK STOP - Indicates permanent write protect register is programmed Set PSWP W Not Programmed X ACK Read RSWP R X Programmed No ACK STOP - Indicates reversible write protect register is programmed Read RSWP R X Not Programmed ACK Read out data don't care. Indicates RSWP register is not programmed Set RSWP W X Programmed No ACK STOP - Indicates reversible write protect register is programmed Set RSWP W X Not Programmed ACK Program reversible write protect register (reversible) Clear RSWP W Programmed X No ACK STOP - Indicates permanent write protect register is programmed Clear RSWP W Not Programmed X ACK Table 7-4. Reversible Write Protect Register RSWP Acknowledgme nt from Device Action from Device Program permanent write protect register (irreversible) Clear (unprogram) reversible write protect register (reversible) WP Connected to Vcc WP Connected to Vcc R/W Bit Permanent Write Protect Register PSWP Reversible Write Protect Register RSWP Acknowledgme nt from Device 1010 R X X ACK Read array 1010 W X X ACK Device Write Protect Read PSWP R Programmed X No ACK STOP - Indicates permanent write protect register is programmed Read PSWP R Not Programmed X ACK Read out data don't care. Indicates PSWP register is not programmed Comman d Action from Device 11 5185D–SEEPR–1/08 WP Connected to Vcc Set PSWP W Programmed X No ACK Set PSWP W Not Programmed X ACK Read RSWP R X Programmed No ACK Read RSWP R X Not Programmed ACK Set RSWP W X Programmed No ACK Set RSWP W X Not Programmed ACK Clear RSWP W Programmed X No ACK Clear RSWP W Not Programmed X ACK STOP - Indicates permanent write protect register is programmed Cannot program write protect registers STOP - Indicates reversible write protect register is programmed Read out data don't care. Indicates RSWP register is not programmed STOP - Indicates reversible write protect register is programmed Cannot program write protect registers STOP - Indicates permanent write protect register is programmed Cannot write to write protect registers 8. Read Operations Read operations are initiated the same way as write operations with the exception that the read/write select bit in the device address word is set to one. There are three read operations: current address read, random address read and sequential read. CURRENT ADDRESS READ: The internal data word address counter maintains the last address accessed during the last read or write operation, incremented by one. This address stays valid between operations as long as the chip power is maintained. The address “roll over” during read is from the last byte of the last memory page to the first byte of the first page. Once the device address with the read/write select bit set to one is clocked in and acknowledged by the EEPROM, the current address data word is serially clocked out. To end the command, the microcontroller does not respond with an input zero but does generate a following stop condition (see Figure 8-3 on page 14). RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data word address. Once the device address word and data word address are clocked in and acknowledged by the EEPROM, the microcontroller must generate another start condition. The microcontroller now initiates a current address read by sending a device address with the read/write select bit high. The EEPROM acknowledges the device address and serially clocks out the data word. To end the command, the microcontroller does not respond with a zero but does generate a following stop condition (see Figure 8-4 on page 14). SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a random address read. After the microcontroller receives a data word, it responds with an acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment the data word address and serially clock out sequential data words. When the memory address limit is reached, the data word address will “roll over” and the sequential read will continue. The sequential read operation is terminated when the microcontroller does not respond with a zero but does generate a following stop condition (see Figure 8-5 on page 14). 12 AT34C02C 5185D–SEEPR–1/08 AT34C02C PERMANENT WRITE PROTECT REGISTER (PSWP) STATUS: To find out if the register has been programmed, the same procedure is used as to program the register except that the R/W bit is set to 1. If the device sends an acknowledge, then the permanent write protect register has not been programmed. Otherwise, it has been programmed and the device is permanently write protected at the first half of the array. Table 8-1. PSWP Status Pin Preamble RW Command A2 A1 A0 B7 B6 B5 B4 B3 B2 B1 B0 Read PSWP A2 A1 A0 0 1 1 0 A2 A1 A0 1 REVERSIBLE WRITE PROTECT REGISTER(RSWP) STATUS: To find out if the register has been programmed, the same procedure is used as to program the register except that the R/W bit is set to 1. If the sends an device acknowledge, then the reversible write protect register has not been programmed. Otherwise, it has been programmed and the device is write protected (reversible) at the first half of the array. Figure 8-1. Device Address Figure 8-2. Byte Write Figure 1. Page Write 13 5185D–SEEPR–1/08 Figure 8-3. Current Address Read Figure 8-4. Random Read Figure 8-5. Sequential Read 14 AT34C02C 5185D–SEEPR–1/08 AT34C02C AT34C02C Ordering Information Ordering Code Package (1) (NiPdAu Lead Finish) 8S1 AT34C02CN-SH-T (NiPdAu Lead Finish) 8S1 AT34C02CN-SH-B (2) (1) (NiPdAu Lead Finish) 8A2 AT34C02C-TH-T(2) (NiPdAu Lead Finish) 8A2 (2) 8Y6 (2) 8U3-1 AT34C02C-TH-B AT34C02CY6-YH-T (NiPdAu Lead Finish) AT34C02CU3-UU-T Notes: Operation Range Lead-free/Halogen-free/ Industrial Temperature (–40°C to 85°C) 1. “-B” denotes bulk. 2. “-T” denotes tape and reel. SOIC = 4K per reel; TSSOP, Ultra Thin Mini MAP and dBGA2 = 5K per reel. Package Type 8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC) 8A2 8-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP) 8Y6 8-lead, 2.00 mm x 3.00 mm Body, 0.50 mm Pitch, Ultra Thin Mini-MAP, Dual No Lead Package (DFN), (MLP 2x3 mm) 8U3-1 8-ball, die Ball Grid Array Package (dBGA2) Options –1.7 Low Voltage (1.7V to 5.5V) 15 5185D–SEEPR–1/08 9. New part marking 9.3 8-TSSOP TOP MARK Pin 1 Indicator (Dot) | |---|---|---|---| * H Y W W |---|---|---|---|---| 3 4 C 1 * |---|---|---|---|---| BOTTOM MARK |---|---|---|---|---|---|---| C 0 0 |---|---|---|---|---|---|---| A A A A A A A |---|---|---|---|---|---|---| <- Pin 1 Indicator Y = 6: 7: 8: 9: 16 SEAL YEAR 2006 0: 2010 2007 1: 2011 2008 2: 2012 2009 3: 2013 Country of Origin Atmel Lot # WW = SEAL WEEK 02 = Week 2 04 = Week 4 :: : :::: : :: : :::: :: 50 = Week 50 52 = Week 52 AT34C02C 5185D–SEEPR–1/08 AT34C02C 9.4 8-SOIC Seal Year | Seal Week | | | |---|---|---|---|---|---|---|---| A T M L H Y W W |---|---|---|---|---|---|---|---| 3 4 C 1 |---|---|---|---|---|---|---|---| * Lot Number |---|---|---|---|---|---|---|---| | Pin 1 Indicator (Dot) TOP MARK Y = 6: 7: 8: 9: SEAL YEAR 2006 0: 2010 2007 1: 2011 2008 2: 2012 2009 3: 2013 WW = SEAL WEEK 02 = Week 2 04 = Week 4 :: : :::: : :: : :::: :: 50 = Week 50 52 = Week 52 Lot Number to Use ALL Characters in Marking BOTTOM MARK No Bottom Mark 17 5185D–SEEPR–1/08 9.5 8-Ultra Thin Mini MAP TOP MARK |---|---|---| 3 4 C |---|---|---| H 1 |---|---|---| Y X X |---|---|---| * | Pin 1 Indicator (Dot) Y = YEAR OF ASSEMBLY XX = ATMEL LOT NUMBER TO COORESPOND WITH NSEB TRACE CODE LOG BOOK. (e.g. XX = AA, AB, AC,...AX, AY, AZ) Y = 6: 7: 8: 9: 18 SEAL YEAR 2006 0: 2010 2007 1: 2011 2008 2: 2012 2009 3: 2013 AT34C02C 5185D–SEEPR–1/08 AT34C02C 9.6 dBGA2 TOP MARK LINE 1-------> LINE 2-------> Y 4: 5: 6: 34CU YMTC |<-- Pin 1 This Corner = ONE DIGIT YEAR CODE 2004 7: 2007 2005 8: 2008 2006 9: 2009 M = SEAL MONTH (USE ALPHA DESIGNATOR A-L) A = JANUARY B = FEBRUARY " " """"""" J = OCTOBER K = NOVEMBER L = DECEMBER TC = TRACE CODE (ATMEL LOT NUMBERS TO CORRESPOND WITH ATK TRACE CODE LOG BOOK) 19 5185D–SEEPR–1/08 10. Packaging Information 8S1 – JEDEC SOIC C 1 E E1 L N ∅ Top View End View e B COMMON DIMENSIONS (Unit of Measure = mm) A SYMBOL A1 D Side View MIN NOM MAX A 1.35 – 1.75 A1 0.10 – 0.25 b 0.31 – 0.51 C 0.17 – 0.25 D 4.80 – 5.00 E1 3.81 – 3.99 E 5.79 – 6.20 e NOTE 1.27 BSC L 0.40 – 1.27 ∅ 0˚ – 8˚ Note: These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc. 10/7/03 R 20 1150 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 TITLE 8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing Small Outline (JEDEC SOIC) DRAWING NO. 8S1 REV. B AT34C02C 5185D–SEEPR–1/08 AT34C02C 8A2 – TSSOP 3 2 1 Pin 1 indicator this corner E1 E L1 N L Top View End View COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL A b D MIN NOM MAX NOTE 2.90 3.00 3.10 2, 5 4.40 4.50 3, 5 E E1 e D A2 6.40 BSC 4.30 A – – 1.20 A2 0.80 1.00 1.05 b 0.19 – 0.30 e Side View L 0.65 BSC 0.45 L1 Notes: 4 0.60 0.75 1.00 REF 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances, datums, etc. 2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed 0.15 mm (0.006 in) per side. 3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm (0.010 in) per side. 4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between protrusion and adjacent lead is 0.07 mm. 5. Dimension D and E1 to be determined at Datum Plane H. 5/30/02 R 2325 Orchard Parkway San Jose, CA 95131 TITLE 8A2, 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP) DRAWING NO. 8A2 REV. B 21 5185D–SEEPR–1/08 8Y6 – Mini-MAP D2 A b (8X) E E2 Pin 1 Index Area Pin 1 ID L (8X) D A2 e (6X) A1 1.50 REF. COMMON DIMENSIONS (Unit of Measure = mm) A3 SYMBOL MIN D 1.50 1.60 E2 - - 1.40 A - - 0.60 A1 0.0 0.02 0.05 A2 - - 0.55 L 0.20 REF 0.20 e b NOTE 3.00 BSC 1.40 A3 Notes: MAX 2.00 BSC E D2 NOM 0.30 0.40 0.50 BSC 0.20 0.25 0.30 2 1. This drawing is for general information only. Refer to JEDEC Drawing MO-229, for proper dimensions, tolerances, datums, etc. 2. Dimension b applies to metallized terminal and is measured between 0.15 mm and 0.30 mm from the terminal tip. If the terminal has the optional radius on the other end of the terminal, the dimension should not be measured in that radius area. 3. Soldering the large thermal pad is optional, but not recommended. No electrical connection is accomplished to the device through this pad, so if soldered it should be tied to ground 10/16/07 R 22 2325 Orchard Parkway San Jose, CA 95131 DRAWING NO. TITLE 8Y6, 8-lead 2.0 x 3.0 mm Body, 0.50 mm Pitch, Utlra Thin Mini-Map, 8Y6 Dual No Lead Package (DFN) ,(MLP 2x3) REV. D AT34C02C 5185D–SEEPR–1/08 AT34C02C 8U3-1 – dBGA2 E D 1. b A1 PIN 1 BALL PAD CORNER A2 Top View A Side View PIN 1 BALL PAD CORNER 1 2 3 4 8 7 6 5 (d1) d e COMMON DIMENSIONS (Unit of Measure = mm) (e1) Bottom View 8 SOLDER BALLS 1. This drawing is for general information only. 2. Dimension ‘b’ is measured at maximum solder ball diameter SYMBOL MIN A 0.71 0.81 0.91 A1 0.10 0.15 0.20 A2 0.40 0.45 0.50 b 0.20 0.25 0.30 D MAX NOM NOTE 2 1.50 BSC E 2.00 BSC e 0.50 BSC e1 0.25 REF d 1.00 BSC d1 0.25 REF 6/24/03 R 1150 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 TITLE 8U3-1, 8-ball, 1.50 x 2.00 mm Body, 0.50 mm pitch, Small Die Ball Grid Array Package (dBGA2) DRAWING NO. REV. PO8U3-1 A 23 5185D–SEEPR–1/08 11. Revision History 24 Doc. Rev. Date Comments 5185D 1/2008 Removed ‘preliminary’ status 5185C 8/2007 Updated to new template Added Package Marking tables 5185B 3/2007 Implemented revision history AT34C02C 5185D–SEEPR–1/08 Headquarters International Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131 USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Atmel Europe Le Krebs 8, Rue Jean-Pierre Timbaud BP 309 78054 Saint-Quentin-enYvelines Cedex France Tel: (33) 1-30-60-70-00 Fax: (33) 1-30-60-71-11 Atmel Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Technical Support [email protected] Sales Contact www.atmel.com/contacts Product Contact Web Site www.atmel.com Literature Requests www.atmel.com/literature Disclaimer: The information in this document is provided in connection with Atmel products. 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Atmel makes no representations or warranties with respect to the accuracy or completeness of the contents of this document and reserves the right to make changes to specifications and product descriptions at any time without notice. Atmel does not make any commitment to update the information contained herein. Unless specifically provided otherwise, Atmel products are not suitable for, and shall not be used in, automotive applications. Atmel’s products are not intended, authorized, or warranted for use as components in applications intended to support or sustain life. ©2008 Atmel Corporation. All rights reserved. Atmel ®, logo and combinations thereof, and others, are registered trademarks or trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be trademarks of others. 5185D–SEEPR–1/08