ATMEL AT28LV64B-25JC

AT28LV64B
Features
•
•
•
•
•
•
•
•
•
•
•
Single 3.3V ± 10% Supply
3-Volt-Only Read and Write Operation
Software-Protected Programming
Low Power Dissipation
15 mA Active Current
20 µA CMOS Standby Current
Fast Read Access Time − 200 ns
Automatic Page Write Operation
Internal Address and Data Latches for 64-Bytes
Internal Control Timer
Fast Write Cycle Times
Page Write Cycle Time: 10 ms Maximum
1 to 64-Byte Page Write Operation
DATA Polling for End of Write Detection
High Reliability CMOS Technology
Endurance: 10,000 Cycles
Data Retention: 10 Years
JEDEC Approved Byte-Wide Pinout
Commercial and Industrial Temperature Ranges
Description
The AT28LV64B is a high-performance electrically erasable programmable read only
memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 20 µA.
64K (8K x 8)
Low Voltage
CMOS
E2PROM with
Page Write and
Software Data
Protection
The AT28LV64B is accessed like a static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
(continued)
Pin Configurations
Pin Name
Function
A0 - A12
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
DC
Don’t Connect
AT28LV64B
PDIP, SOIC
Top View
PLCC
Top View
TSOP
Top View
Note: PLCC package pins 1 and
17 are DON’T CONNECT.
0299C
2-135
Description (Continued)
writing of up to 64-bytes simultaneously. During a write cycle, the addresses and 1 to 64-bytes of data are internally
latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device
will automatically write the latched data using an internal
control timer. The end of a write cycle can be detected by
DATA polling of I/O7. Once the end of a write cycle has
been detected a new access for a read or write can begin.
Atmel’s 28LV64B has additional features to ensure high
quality and manufacturability. The device utilizes internal
error correction for extended endurance and improved
data retention characteristics. A software data protection
mechanism guards against inadvertent writes. The device
also includes an extra 64-bytes of E2PROM for device
identification or tracking.
Block Diagram
Absolute Maximum Ratings*
Temperature Under Bias................. -55°C to +125°C
Storage Temperature...................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground .............-0.6V to VCC + 0.6V
Voltage on OE and A9
with Respect to Ground ................... -0.6V to +13.5V
2-136
AT28LV64B
*NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions beyond those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
AT28LV64B
Device Operation
READ: The AT28LV64B is accessed like a static RAM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in the high
impedance state when either CE or OE is high. This dualline control gives designers flexibility in preventing bus
contention in their systems.
read. Reading the toggle bit may begin at any time during
the write cycle.
BYTE WRITE: A low pulse on the WE or CE input with CE
or WE low (respectively) and OE high initiates a write cycle. The address is latched on the falling edge of CE or
WE, whichever occurs last. The data is latched by the first
rising edge of CE or WE. Once a byte write has been
started, it will automatically time itself to completion. Once
a programming operation has been initiated and for the
duration of tWC, a read operation will effectively be a polling operation.
HARDWARE PROTECTION: Hardware features protect
against inadvertent writes to the AT28LV64B in the following ways: (a) VCC power-on delay− once VCC has reached
1.8V (typical) the device will automatically time out 10 ms
(typical) before allowing a write; (b) write inhibitholding
any one of OE low, CE high or WE high inhibits write cycles; (c) noise filterpulses of less than 15 ns (typical) on
the WE or CE inputs will not initiate a write cycle.
PAGE WRITE: T h e p a g e w r i t e o p e r a t i o n o f t h e
AT28LV64B allows 1 to 64-bytes of data to be written into
the device during a single internal programming period. A
page write operation is initiated in the same manner as a
byte write; the first byte written can then be followed by 1
to 63 additional bytes. Each successive byte must be written within 100 µs (tBLC) of the previous byte. If the tBLC
limit is exceeded, the AT28LV64B will cease accepting
data and commence the internal programming operation.
All bytes during a page write operation must reside on the
same page as defined by the state of the A6 to A12 inputs.
For each WE high to low transition during the page write
operation, A6 to A12 must be the same.
The A0 to A5 inputs specify which bytes within the page
are to be written. The bytes may be loaded in any order
and may be altered within the same load period. Only
bytes which are specified for writing will be written; unnecessary cycling of other bytes within the page does not occur.
DATA POLLING: The AT28LV64B features DATA Polling
to indicate the end of a write cycle. During a byte or page
write cycle an attempted read of the last byte written will
result in the complement of the written data to be presented on I/O7. Once the write cycle has been completed,
true data is valid on all outputs, and the next write cycle
may begin. DATA Polling may begin at anytime during the
write cycle.
DATA PROTECTION: If precautions are not taken, inadvertent writes may occur during transitions of the host system power supply. Atmel has incorporated both hardware
and software features that will protect the memory against
inadvertent writes.
SOFTWARE DATA PROTECTION: A software-controlled data protection feature has been implemented on the
AT28LV64B. Software data protection (SDP) helps prevent inadvertent writes from corrupting the data in the device. SDP can prevent inadvertent writes during power-up
and power-down as well as any other potential periods of
system instability.
The AT28LV64B can only be written using the software
data protection feature. A series of three write commands
to specific addresses with specific data must be presented
to the device before writing in the byte or page mode. The
same three write commands must begin each write operation. All software write commands must obey the page
mode write timing specifications. The data in the 3-byte
command sequence is not written to the device; the addresses in the command sequence can be utilized just like
any other location in the device.
Any attempt to write to the device without the 3-byte sequence will start the internal write timers. No data will be
written to the device; however, for the duration of tWC,
read operations will effectively be polling operations.
DEVICE IDENTIFICATION: A n e x t r a 6 4 - b y t e s o f
E2PROM memory are available to the user for device
identification. By raising A9 to 12V ± 0.5V and using address locations 7FC0H to 7FFFH, the additional bytes
may be written to or read from in the same manner as the
regular memory array.
TOGGLE BIT: I n a d d i t i o n t o DATA P o l l i n g , t he
AT28LV64B provides another method for determining the
end of a write cycle. During the write operation, successive attempts to read data from the device will result in
I/O6 toggling between one and zero. Once the write has
completed, I/O6 will stop toggling and valid data will be
2-137
DC and AC Operating Range
Operating
Temperature (Case)
AT28LV64B-20
AT28LV64B-25
0°C - 70°C
0°C - 70°C
-40°C - 85°C
-40°C - 85°C
3.3V ± 10%
3.3V ± 10%
Com.
Ind.
VCC Power Supply
Operating Modes
Mode
CE
OE
WE
I/O
Read
VIL
VIL
VIH
DOUT
VIL
VIH
VIL
DIN
Write
(2)
Standby/Write Inhibit
VIH
X
(1)
X
Write Inhibit
X
X
VIH
Write Inhibit
X
VIL
X
Output Disable
X
VIH
Chip Erase
VH
VIL
(3)
High Z
X
High Z
VIL
High Z
3. VH = 12.0V ± 0.5V.
Notes: 1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
DC Characteristics
Symbol
Parameter
Condition
Min
Max
Units
ILI
Input Load Current
VIN = 0V to VCC + 1V
10
µA
ILO
Output Leakage Current
VI/O = 0V to VCC
10
µA
ISB
VCC Standby Current CMOS
CE = VCC - 0.3V to VCC + 1V
Com.
20
µA
Ind.
50
µA
ICC
VCC Active Current
f = 5 MHz; IOUT = 0 mA
15
mA
VIL
Input Low Voltage
0.6
V
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 1.6 mA
VOH
Output High Voltage
IOH = -100 µA
2-138
AT28LV64B
2.0
V
0.45
2.0
V
V
AT28LV64B
AC Read Characteristics
AT28LV64B-20
AT28LV64B-25
Min
Min
Symbol
Parameter
tACC
Address to Output Delay
tCE (1)
CE to Output Delay
tOE (2)
OE to Output Delay
0
80
CE or OE to Output Float
0
55
Output Hold from OE, CE or Address,
whichever occurred first
0
tDF
(3, 4)
tOH
Max
Units
200
250
ns
200
250
ns
0
100
ns
0
60
ns
Max
0
ns
AC Read Waveforms (1, 2, 3, 4)
Notes: 1. CE may be delayed up to tACC - tCE after the address
transition without impact on tACC.
2. OE may be delayed up to tCE - tOE after the falling
edge of CE without impact on tCE or by tACC - tOE
after an address change without impact on tACC.
Input Test Waveforms and
Measurement Level
3. tDF is specified from OE or CE, whichever occurs first
(CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
Output Test Load
tR, tF < 20 ns
Pin Capacitance (f = 1 MHz, T = 25°C) (1)
CIN
COUT
Note:
Typ
Max
Units
Conditions
4
6
pF
VIN = 0V
8
12
pF
VOUT = 0V
1. This parameter is characterized and is not 100% tested.
2-139
AC Write Characteristics
Symbol
Parameter
tAS, tOES
Address, OE Set-up Time
tAH
Address Hold Time
tCS
Min
Max
Units
0
ns
100
ns
Chip Select Set-up Time
0
ns
tCH
Chip Select Hold Time
0
ns
tWP
Write Pulse Width (WE or CE)
200
ns
tDS
Data Set-up Time
100
ns
tDH, tOEH
Data, OE Hold Time
0
ns
(1)
tDV
Time to Data Valid
NR
tWPH
Write Pulse Width High
100
Notes: 1. NR = No Restriction.
2. All byte write operations must be preceded by the SDP command sequence.
AC Write Waveforms
WE Controlled
CE Controlled
2-140
AT28LV64B
ns
AT28LV64B
Page Mode Characteristics
Symbol
Parameter
Min
tWC
Write Cycle Time
tAS
Address Set-up Time
tAH
Max
Units
10
ms
0
ns
Address Hold Time
100
ns
tDS
Data Set-up Time
100
ns
tDH
Data Hold Time
0
ns
tWP
Write Pulse Width
200
ns
tBLC
Byte Load Cycle Time
tWPH
Write Pulse Width High
100
100
µs
ns
Write Algorithm (1)
LOAD DATA AA
TO
ADDRESS 1555
Notes for software program code:
1. Data Format: I/O7 - I/O0 (Hex);
Address Format: A12 - A0 (Hex).
2. Data protect state will be re-activated at
the end of the write cycle.
3. 1 to 64-bytes of data are loaded.
LOAD DATA 55
TO
ADDRESS 0AAA
LOAD DATA A0
TO
ADDRESS 1555
WRITES ENABLED (2)
LOAD DATA XX
TO
ANY ADDRESS (3)
LOAD LAST BYTE
TO
LAST ADDRESS
ENTER DATA
PROTECT STATE
Software Data Protection Write Cycle Waveforms (1, 2, 3)
Notes: 1. A0 - A12 must conform to the addressing sequence for
the first three bytes as shown above.
2. A6 through A12 must specify the same page address during
each high to low transition of WE (or CE)
after the software code has been entered.
3. OE must be high only when WE and CE are both low.
2-141
Data Polling Characteristics (1)
Symbol
Parameter
tDH
Data Hold Time
tOEH
OE Hold Time
Min
Typ
Max
0
ns
0
ns
(2)
tOE
OE to Output Delay
tWR
Write Recovery Time
Units
ns
0
Notes: 1. These parameters are characterized and not 100% tested.
ns
2. See AC Read Characteristics.
Data Polling Waveforms
Toggle Bit Characteristics (1)
Symbol
Parameter
Min
Typ
Max
Units
tDH
Data Hold Time
10
ns
tOEH
OE Hold Time
10
ns
tOE
OE to Output Delay (2)
tOEHP
OE High Pulse
tWR
Write Recovery Time
ns
150
ns
0
ns
Notes: 1. These parameters are characterized and not 100% tested.
2. See AC Read Characteristics.
Toggle Bit Waveforms
Notes: 1. Toggling either OE or CE or both OE and CE will
operate toggle bit.
2. Beginning and ending state of I/O6 will vary.
2-142
AT28LV64B
3. Any address location may be used, but the address
should not vary.
AT28LV64B
Ordering Information (1)
tACC
ICC (mA)
Ordering Code
Package
0.05
AT28LV64B-20JC
AT28LV64B-20PC
AT28LV64B-20SC
AT28LV64B-20TC
32J
28P6
28S
28T
Commercial
(0°C to 70°C)
15
0.05
AT28LV64B-20JI
AT28LV64B-20PI
AT28LV64B-20SI
AT28LV64B-20TI
32J
28P6
28S
28T
Industrial
(-40°C to 85°C)
15
0.05
AT28LV64B-25JC
AT28LV64B-25PC
AT28LV64B-25SC
AT28LV64B-25TC
32J
28P6
28S
28T
Commercial
(0°C to 70°C)
15
0.05
AT28LV64B-25JI
AT28LV64B-25PI
AT28LV64B-25SI
AT28LV64B-25TI
32J
28P6
28S
28T
Industrial
(-40°C to 85°C)
(ns)
Active
Standby
200
15
250
Note:
Operation Range
1. See Valid Part Number table below.
Valid Part Numbers
The following table lists standard Atmel products that can be ordered.
Device Numbers
Speed
Package and Temperature Combinations
AT28LV64B
20
JC, JI, PC, PI, SC, SI, TC, TI
AT28LV64B
25
JC, JI, PC, PI, SC, SI, TC, TI
Package Type
32J
32 Lead, Plastic J-Leaded Chip Carrier (PLCC)
28P6
28 Lead, 0.600" Wide, Plastic Dual Inline Package (PDIP)
28S
28 Lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC)
28T
28 Lead, Plastic Thin Small Outline Package (TSOP)
2-143