CY7C1423KV18/CY7C1424KV18 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture Features Configurations ■ 36-Mbit density (2 M × 18, 1 M × 36) CY7C1423KV18 – 2 M × 18 ■ 333 MHz clock for high bandwidth CY7C1424KV18 – 1 M × 36 ■ Two-word burst for reducing address bus frequency Functional Description ■ Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches ■ Echo clocks (CQ and CQ) simplify data capture in high speed systems ■ Synchronous internally self timed writes ■ DDR II operates with 1.5 cycle read latency when DOFF is asserted HIGH ■ Operates similar to DDR I device with 1 cycle read latency when DOFF is asserted LOW ■ 1.8 V core power supply with HSTL inputs and outputs ■ Variable drive HSTL output buffers ■ Expanded HSTL output voltage (1.4 V to VDD) ❐ Supports both 1.5 V and 1.8 V IO supply ■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm) ■ Offered in both Pb-free and non Pb-free packages ■ JTAG 1149.1 compatible test access port ■ Phase locked loop (PLL) for accurate data placement The CY7C1423KV18, and CY7C1424KV18 are 1.8 V synchronous pipelined SRAMs, equipped with DDR II SIO (double data rate separate I/O) architecture. The DDR II SIO consists of two separate ports: the read port and the write port to access the memory array. The read port has data outputs to support read operations and the write port has data inputs to support write operations. The DDR II SIO has separate data inputs and data outputs to completely eliminate the need to “turnaround” the data bus required with common I/O devices. Access to each port is accomplished through a common address bus. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are not provided. Each address location is associated with two 18-bit words in the case of CY7C1423KV18, and two 36-bit words in the case of CY7C1424KV18 that burst sequentially into or out of the device. Asynchronous inputs include an output impedance matching input (ZQ). Synchronous data outputs are tightly matched to the two output echo clocks CQ/CQ, eliminating the need to capture data separately from each individual DDR II SIO SRAM in the system design. Output data clocks (C/C) enable maximum system clocking and data synchronization flexibility. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C (or K or K in a single clock domain) input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry. For a complete list of related documentation, click here. Selection Guide Description Maximum operating frequency Maximum operating current Cypress Semiconductor Corporation Document Number: 001-57829 Rev. *H • 198 Champion Court • 333 MHz 300 MHz 250 MHz Unit 333 300 250 MHz × 18 490 460 430 mA × 36 600 Not Offered 490 San Jose, CA 95134-1709 • 408-943-2600 Revised December 24, 2015 CY7C1423KV18/CY7C1424KV18 Logic Block Diagram – CY7C1423KV18 K K CLK Gen. DOFF LD LD Control Logic R/W C Read Data Reg. C CQ 36 R/W VREF Read Add. Decode Address Register Write Data Reg 1M x 18 Array 20 Write Data Reg 1M x 18 Array A(19:0) 18 Write Add. Decode D[17:0] 18 Control Logic 18 Reg. Reg. 18 Reg. 18 BWS[1:0] CQ 18 Q[17:0] Logic Block Diagram – CY7C1424KV18 K K CLK Gen. DOFF LD LD Control Logic R/W C Read Data Reg. C CQ 72 R/W VREF Read Add. Decode Address Register Write Data Reg 512K x 18 Array 19 Write Data Reg 512K x 18 Array A(18:0) 36 Write Add. Decode D[35:0] 36 Control Logic BWS[3:0] Document Number: 001-57829 Rev. *H 36 Reg. Reg. 36 Reg. 36 CQ 36 Q[35:0] Page 2 of 31 CY7C1423KV18/CY7C1424KV18 Contents Pin Configurations ........................................................... 4 Pin Definitions .................................................................. 5 Functional Overview ........................................................ 6 Read Operations ......................................................... 6 Write Operations ......................................................... 6 Byte Write Operations ................................................. 7 Single Clock Mode ...................................................... 7 DDR Operation ............................................................ 7 Depth Expansion ......................................................... 7 Programmable Impedance .......................................... 7 Echo Clocks ................................................................ 7 PLL .............................................................................. 7 Application Example ........................................................ 8 Truth Table ........................................................................ 9 Write Cycle Descriptions ................................................. 9 Write Cycle Descriptions ............................................... 10 IEEE 1149.1 Serial Boundary Scan (JTAG) .................. 11 Disabling the JTAG Feature ...................................... 11 Test Access Port ....................................................... 11 Performing a TAP Reset ........................................... 11 TAP Registers ........................................................... 11 TAP Instruction Set ................................................... 11 TAP Controller State Diagram ....................................... 13 TAP Controller Block Diagram ...................................... 14 TAP Electrical Characteristics ...................................... 14 TAP AC Switching Characteristics ............................... 15 TAP Timing and Test Conditions .................................. 16 Identification Register Definitions ................................ 17 Scan Register Sizes ....................................................... 17 Instruction Codes ........................................................... 17 Document Number: 001-57829 Rev. *H Boundary Scan Order .................................................... 18 Power Up Sequence in DDR II SRAM ........................... 19 Power Up Sequence ................................................. 19 PLL Constraints ......................................................... 19 Maximum Ratings ........................................................... 20 Operating Range ............................................................. 20 Neutron Soft Error Immunity ......................................... 20 Electrical Characteristics ............................................... 20 DC Electrical Characteristics ..................................... 20 AC Electrical Characteristics ..................................... 22 Capacitance .................................................................... 22 Thermal Resistance ........................................................ 22 AC Test Loads and Waveforms ..................................... 22 Switching Characteristics .............................................. 23 Switching Waveforms .................................................... 25 Ordering Information ...................................................... 26 Ordering Code Definitions ......................................... 26 Package Diagram ............................................................ 27 Acronyms ........................................................................ 28 Document Conventions ................................................. 28 Units of Measure ....................................................... 28 Document History Page ................................................. 29 Sales, Solutions, and Legal Information ...................... 31 Worldwide Sales and Design Support ....................... 31 Products .................................................................... 31 PSoC® Solutions ...................................................... 31 Cypress Developer Community ................................. 31 Technical Support ..................................................... 31 Page 3 of 31 CY7C1423KV18/CY7C1424KV18 Pin Configurations The pin configurations for CY7C1423KV18 and CY7C1424KV18 follow. [1] Figure 1. 165-ball FBGA (13 × 15 × 1.4 mm) pinout CY7C1423KV18 (2 M × 18) 1 2 3 4 5 A CQ B NC C D 6 7 8 NC/144M A R/W Q9 D9 A NC NC D10 NC D11 Q10 9 10 11 BWS1 K NC/288M NC K BWS0 LD A NC/72M CQ A NC NC Q8 VSS A A A VSS NC Q7 D8 VSS VSS VSS VSS VSS NC NC D7 E NC NC Q11 VDDQ VSS VSS VSS VDDQ NC D6 Q6 F NC Q12 D12 VDDQ VDD VSS VDD VDDQ NC NC Q5 G NC D13 Q13 VDDQ VDD VSS VDD VDDQ NC NC D5 H DOFF VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J NC NC D14 VDDQ VDD VSS VDD VDDQ NC Q4 D4 K NC NC Q14 VDDQ VDD VSS VDD VDDQ NC D3 Q3 L NC Q15 D15 VDDQ VSS VSS VSS VDDQ NC NC Q2 M NC NC D16 VSS VSS VSS VSS VSS NC Q1 D2 N NC D17 Q16 VSS A A A VSS NC NC D1 P NC NC Q17 A A C A A NC D0 Q0 R TDO TCK A A A C A A A TMS TDI 1 2 3 4 5 6 7 8 9 10 11 R/W BWS2 K BWS1 LD A NC/144M CQ D18 A BWS3 K BWS0 A D17 Q17 Q8 CY7C1424KV18 (1 M × 36) A CQ NC/288M NC/72M B Q27 Q18 C D27 Q28 D19 VSS A A A VSS D16 Q7 D8 D D28 D20 Q19 VSS VSS VSS VSS VSS Q16 D15 D7 E Q29 D29 Q20 VDDQ VSS VSS VSS VDDQ Q15 D6 Q6 F Q30 Q21 D21 VDDQ VDD VSS VDD VDDQ D14 Q14 Q5 G D30 D22 Q22 VDDQ VDD VSS VDD VDDQ Q13 D13 D5 H DOFF VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J D31 Q31 D23 VDDQ VDD VSS VDD VDDQ D12 Q4 D4 K Q32 D32 Q23 VDDQ VDD VSS VDD VDDQ Q12 D3 Q3 L Q33 Q24 D24 VDDQ VSS VSS VSS VDDQ D11 Q11 Q2 M D33 Q34 D25 VSS VSS VSS VSS VSS D10 Q1 D2 N D34 D26 Q25 VSS A A A VSS Q10 D9 D1 P Q35 D35 Q26 A A C A A Q9 D0 Q0 R TDO TCK A A A C A A A TMS TDI Note 1. NC/72M, NC/144M, and NC/288M are not connected to the die and can be tied to any voltage level. Document Number: 001-57829 Rev. *H Page 4 of 31 CY7C1423KV18/CY7C1424KV18 Pin Definitions Pin Name I/O Pin Description D[x:0] InputData input signals. Sampled on the rising edge of K and K clocks during valid write operations. synchronous CY7C1423KV18 - D[17:0] CY7C1424KV18 - D[35:0] LD InputSynchronous load. This input is brought LOW when a bus cycle sequence is defined. This definition synchronous includes address and read/write direction. All transactions operate on a burst of 2 data (one clock period of bus activity). BWS0, BWS1, BWS2, BWS3 InputByte write select 0, 1, 2, and 3 active LOW. Sampled on the rising edge of the K and K clocks during synchronous write operations. Used to select which byte is written into the device during the current portion of the write operations. Bytes not written remain unaltered. CY7C1423KV18 BWS0 controls D[8:0], BWS1 controls D[17:9]. CY7C1424KV18BWS0 controls D[8:0], BWS1 controls D[17:9],BWS2 controls D[26:18] and BWS3 controls D[35:27]. All the byte write selects are sampled on the same edge as the data. Deselecting a byte write select ignores the corresponding byte of data and it is not written into the device. A InputAddress inputs. Sampled on the rising edge of the K clock during active read and write operations. These synchronous address inputs are multiplexed for both read and write operations. Internally, the device is organized as 2 M × 18 (2 arrays each of 1 M × 18) for CY7C1423KV18 and 1 M × 36 (2 arrays each of 512 K × 36) for CY7C1424KV18. Therefore, only 20 address inputs are needed to access the entire memory array of CY7C1423KV18 and 19 address inputs for CY7C1424KV18. These inputs are ignored when the appropriate port is deselected. Q[x:0] OutputsData output signals. These pins drive out the requested data during a read operation. Valid data is driven synchronous out on the rising edge of both the C and C clocks during read operations, or K and K when in single clock mode. When the read port is deselected, Q[x:0] are automatically tristated. CY7C1423KV18 Q[17:0] CY7C1424KV18 Q[35:0] R/W InputSynchronous read/write input. When LD is LOW, this input designates the access type (read when synchronous R/W is HIGH, write when R/W is LOW) for the loaded address. R/W must meet the setup and hold times around the edge of K. C Input clock Positive input clock for output data. C is used in conjunction with C to clock out the read data from the device. C and C can be used together to deskew the flight times of various devices on the board back to the controller. See Application Example on page 8 for further details. C Input clock Negative input clock for output data. C is used in conjunction with C to clock out the read data from the device. C and C can be used together to deskew the flight times of various devices on the board back to the controller. See Application Example on page 8 for further details. K Input clock Positive input clock input. The rising edge of K is used to capture synchronous inputs to the device and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising edge of K. K Input clock Negative input clock input. K is used to capture synchronous inputs being presented to the device and to drive out data through Q[x:0] when in single clock mode. CQ Echo clock CQ referenced with respect to C. This is a free running clock and is synchronized to the input clock for output data (C) of the DDR II. In the single clock mode, CQ is generated with respect to K. The timings for the echo clocks is shown in the Switching Characteristics on page 23. CQ Echo clock CQ referenced with respect to C. This is a free running clock and is synchronized to the input clock for output data (C) of the DDR II. In the single clock mode, CQ is generated with respect to K. The timings for the echo clocks is shown in the Switching Characteristics on page 23. ZQ Input Output impedance matching input. This input is used to tune the device outputs to the system data bus impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 × RQ, where RQ is a resistor connected between ZQ and ground. Alternatively, this pin can be connected directly to VDDQ, which enables the minimum impedance mode. This pin cannot be connected directly to GND or left unconnected. Document Number: 001-57829 Rev. *H Page 5 of 31 CY7C1423KV18/CY7C1424KV18 Pin Definitions (continued) Pin Name DOFF I/O Pin Description Input PLL turn off active LOW. Connecting this pin to ground turns off the PLL inside the device. The timing in the PLL turned off operation differs from those listed in this data sheet. For normal operation, this pin is connected to a pull-up through a 10 Kohm or less pull-up resistor. The device behaves in DDR I mode when the PLL is turned off. In this mode, the device can be operated at a frequency of up to 167 MHz with DDR I timing. TDO Output TDO pin for JTAG. TCK Input TCK pin for JTAG. TDI Input TDI pin for JTAG. TMS Input TMS pin for JTAG. NC N/A Not connected to the die. Can be tied to any voltage level. NC/72M N/A Not connected to the die. Can be tied to any voltage level. NC/144M N/A Not connected to the die. Can be tied to any voltage level. NC/288M N/A Not connected to the die. Can be tied to any voltage level. VREF VDD VSS VDDQ Inputreference Reference voltage input. Static input used to set the reference level for HSTL inputs, outputs, and AC measurement points. Power supply Power supply inputs to the core of the device. Ground Ground for the device. Power supply Power supply inputs for the outputs of the device. Functional Overview The CY7C1423KV18, and CY7C1424KV18 are synchronous pipelined burst SRAMs equipped with a DDR II separate I/O interface, which operates with a read latency of one and half cycles when DOFF pin is tied HIGH. When DOFF pin is set LOW or connected to VSS the device behaves in DDR I mode with a read latency of one clock cycle. Accesses are initiated on the rising edge of the positive input clock (K). All synchronous input timing is referenced from the rising edge of the input clocks (K and K) and all output timing is referenced to the rising edge of the output clocks (C/C, or K/K when in single clock mode). All synchronous data inputs (D[x:0]) pass through input registers controlled by the rising edge of the input clocks (K and K). All synchronous data outputs (Q[x:0]) pass through output registers controlled by the rising edge of the output clocks (C/C, or K/K when in single-clock mode). All synchronous control (R/W, LD, BWS[0:X]) inputs pass through input registers controlled by the rising edge of the input clock (K). CY7C1423KV18 is described in the following sections. The same basic descriptions apply to CY7C1424KV18. Read Operations The CY7C1423KV18 is organized internally as two arrays of 1 M × 18. Accesses are completed in a burst of two sequential 18-bit data words. Read operations are initiated by asserting R/W HIGH and LD LOW at the rising edge of the positive input clock (K). The address presented to address inputs is stored in the read address register. Following the next K clock rise the corresponding lowest order 18-bit word of data is driven onto the Document Number: 001-57829 Rev. *H Q[17:0] using C as the output timing reference. On the subsequent rising edge of C, the next 18-bit data word is driven onto the Q[17:0]. The requested data is valid 0.45 ns from the rising edge of the output clock (C or C, or K and K when in single clock mode, for 250 MHz device). Read accesses can be initiated on every rising edge of the positive input clock (K). This pipelines the data flow such that data is transferred out of the device on every rising edge of the output clocks, C/C (or K/K when in single clock mode). The CY7C1423KV18 first completes the pending read transactions, when read access is deselected. Synchronous internal circuitry automatically tristates the output following the next rising edge of the positive output clock (C). Write Operations Write operations are initiated by asserting R/W LOW and LD LOW at the rising edge of the positive input clock (K). The address presented to address inputs is stored in the write address register. On the following K clock rise the data presented to D[17:0] is latched and stored into the 18-bit write data register, provided BWS[1:0] are both asserted active. On the subsequent rising edge of the negative input clock (K) the information presented to D[17:0] is also stored into the write data register, provided BWS[1:0] are both asserted active. The 36 bits of data are then written into the memory array at the specified location. Write accesses can be initiated on every rising edge of the positive input clock (K). This pipelines the data flow such that 18 bits of data can be transferred into the device on every rising edge of the input clocks (K and K). When write access is deselected, the device ignores all inputs after the pending write operations are completed. Page 6 of 31 CY7C1423KV18/CY7C1424KV18 Byte Write Operations Depth Expansion Byte write operations are supported by the CY7C1423KV18. A write operation is initiated as described in Write Operations on page 6. The bytes that are written are determined by BWS0 and BWS1, which are sampled with each set of 18-bit data words. Asserting the appropriate byte write select input during the data portion of a write latches the data being presented and writes it into the device. Deasserting the byte write select input during the data portion of a write enables the data stored in the device for that byte to remain unaltered. This feature is used to simplify read, modify, and write operations to a byte write operation. Depth expansion requires replicating the LD control signal for each bank. All other control signals can be common between banks as appropriate. Single Clock Mode The CY7C1423KV18 is used with a single clock that controls both the input and output registers. In this mode the device recognizes only a single pair of input clocks (K and K) that control both the input and output registers. This operation is identical to the operation if the device had zero skew between the K/K and C/C clocks. All timing parameters remain the same in this mode. To use this mode of operation, tie C and C HIGH at power on. This function is a strap option and not alterable during device operation. DDR Operation The CY7C1423KV18 enables high performance operation through high clock frequencies (achieved through pipelining) and double data rate mode of operation. If a read occurs after a write cycle, address and data for the write are stored in registers. The write information must be stored because the SRAM cannot perform the last word write to the array without conflicting with the read. The data stays in this register until the next write cycle occurs. On the first write cycle after the read(s), the stored data from the earlier write is written into the SRAM array. This is called a posted write. Document Number: 001-57829 Rev. *H Programmable Impedance An external resistor, RQ, must be connected between the ZQ pin on the SRAM and VSS to enable the SRAM to adjust its output driver impedance. The value of RQ must be 5 × the value of the intended line impedance driven by the SRAM. The allowable range of RQ to guarantee impedance matching with a tolerance of ±15% is between 175 and 350 , with VDDQ = 1.5 V. The output impedance is adjusted every 1024 cycles at power up to account for drifts in supply voltage and temperature. Echo Clocks Echo clocks are provided on the DDR II to simplify data capture on high speed systems. Two echo clocks are generated by the DDR II. CQ is referenced with respect to C and CQ is referenced with respect to C. These are free running clocks and are synchronized to the output clock of the DDR II. In the single clock mode, CQ is generated with respect to K and CQ is generated with respect to K. The timing for the echo clocks is shown in Switching Characteristics on page 23. PLL These chips use a phase locked loop (PLL) that is designed to function between 120 MHz and the specified maximum clock frequency. During power-up, when the DOFF is tied HIGH, the PLL is locked after 20 s of stable clock. The PLL can also be reset by slowing or stopping the input clocks K and K for a minimum of 30 ns. However, it is not necessary to reset the PLL to lock it to the desired frequency. The PLL automatically locks 20 s after a stable clock is presented. The PLL may be disabled by applying ground to the DOFF pin. When the PLL is turned off, the device behaves in DDR I mode (with one cycle latency and a longer access time). Page 7 of 31 CY7C1423KV18/CY7C1424KV18 Application Example Figure 2 shows four DDR II SIO used in an application. Figure 2. Application Example (Width Expansion) SRAM#1 ZQ CQ/CQ D[x:0] Q[x:0] A RPS WPS BWS C C K K RQ SRAM#2 ZQ CQ/CQ D[x:0] Q[x:0] A RPS WPS BWS C C K K RQ DATA IN[2x:0] DATA OUT [2x:0] ADDRESS RPS WPS BWS CLKIN1/CLKIN1 CLKIN2/CLKIN2 SOURCE K SOURCE K DELAYED K DELAYED K FPGA / ASIC Document Number: 001-57829 Rev. *H Page 8 of 31 CY7C1423KV18/CY7C1424KV18 Truth Table The truth table for CY7C1423KV18 and CY7C1424KV18 follows. [2, 3, 4, 5, 6, 7] Operation K LD R/W Write cycle: Load address; wait one cycle; input write data on consecutive K and K rising edges. L–H L L D(A + 0) at K(t + 1) D(A + 1) at K(t + 1) Read cycle: Load address; wait one and a half cycle; read data on consecutive C and C rising edges. L–H L H Q(A + 0) at C(t + 1) Q(A + 1) at C(t + 2) NOP: No operation L–H H X High Z High Z Stopped X X Previous state Previous state Standby: Clock stopped DQ DQ Write Cycle Descriptions The write cycle description table for CY7C1423KV18 follows. [2, 8] BWS0 BWS1 K K L L L–H – L L – L H L–H L H – H L L–H H L – H H L–H H H – Comments During the data portion of a write sequence CY7C1423KV18 both bytes (D[17:0]) are written into the device. L–H During the data portion of a write sequence: CY7C1423KV18 both bytes (D[17:0]) are written into the device. – During the data portion of a write sequence: CY7C1423KV18 only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered. L–H During the data portion of a write sequence CY7C1423KV18 only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered. – During the data portion of a write sequence CY7C1423KV18 only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered. L–H During the data portion of a write sequence CY7C1423KV18 only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered. – No data is written into the devices during this portion of a write operation. L–H No data is written into the devices during this portion of a write operation. Notes 2. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge. 3. Device powers up deselected with the outputs in a tristate condition. 4. “A” represents address location latched by the devices when transaction was initiated. A + 0, A + 1 represents the internal address sequence in the burst. 5. “t” represents the cycle at which a read/write operation is started. t + 1, and t + 2 are the first, and second clock cycles respectively succeeding the “t” clock cycle. 6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode. 7. Ensure that when the clock is stopped K = K and C = C = HIGH. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically. 8. Is based on a write cycle that was initiated in accordance with the Truth Table on page 9. BWS0, BWS1, BWS2,and BWS3 can be altered on different portions of a write cycle, as long as the setup and hold requirements are achieved. Document Number: 001-57829 Rev. *H Page 9 of 31 CY7C1423KV18/CY7C1424KV18 Write Cycle Descriptions The write cycle description table for CY7C1424KV18 follows. [9, 10] BWS0 BWS1 BWS2 BWS3 K K Comments L L L L L–H – During the data portion of a write sequence, all four bytes (D[35:0]) are written into the device. L L L L – L H H H L–H L H H H – H L H H L–H H L H H – H H L H L–H H H L H – H H H L L–H H H H L – H H H H L–H H H H H – L–H During the data portion of a write sequence, all four bytes (D[35:0]) are written into the device. – During the data portion of a write sequence, only the lower byte (D[8:0]) is written into the device. D[35:9] remains unaltered. L–H During the data portion of a write sequence, only the lower byte (D[8:0]) is written into the device. D[35:9] remains unaltered. – During the data portion of a write sequence, only the byte (D[17:9]) is written into the device. D[8:0] and D[35:18] remains unaltered. L–H During the data portion of a write sequence, only the byte (D[17:9]) is written into the device. D[8:0] and D[35:18] remains unaltered. – During the data portion of a write sequence, only the byte (D[26:18]) is written into the device. D[17:0] and D[35:27] remains unaltered. L–H During the data portion of a write sequence, only the byte (D[26:18]) is written into the device. D[17:0] and D[35:27] remains unaltered. – During the data portion of a write sequence, only the byte (D[35:27]) is written into the device. D[26:0] remains unaltered. L–H During the data portion of a write sequence, only the byte (D[35:27]) is written into the device. D[26:0] remains unaltered. – No data is written into the device during this portion of a write operation. L–H No data is written into the device during this portion of a write operation. Notes 9. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge. 10. Is based on a write cycle that was initiated in accordance with the Truth Table on page 9. BWS0, BWS1, BWS2,and BWS3 can be altered on different portions of a write cycle, as long as the setup and hold requirements are achieved. Document Number: 001-57829 Rev. *H Page 10 of 31 CY7C1423KV18/CY7C1424KV18 IEEE 1149.1 Serial Boundary Scan (JTAG) These SRAMs incorporate a serial boundary scan test access port (TAP) in the FBGA package. This part is fully compliant with IEEE Standard #1149.1-2001. The TAP operates using JEDEC standard 1.8 V IO logic levels. Disabling the JTAG Feature It is possible to operate the SRAM without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternatively be connected to VDD through a pull-up resistor. TDO must be left unconnected. Upon power-up, the device comes up in a reset state, which does not interfere with the operation of the device. Test Access Port Test Clock The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Test Mode Select (TMS) The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. This pin may be left unconnected if the TAP is not used. The pin is pulled up internally, resulting in a logic HIGH level. Test Data-In (TDI) The TDI pin is used to serially input information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information about loading the instruction register, see the TAP Controller State Diagram on page 13. TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected to the most significant bit (MSB) on any register. Test Data-Out (TDO) The TDO output pin is used to serially clock data out from the registers. The output is active, depending upon the current state of the TAP state machine (see Instruction Codes on page 17). The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. Performing a TAP Reset A reset is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. This reset does not affect the operation of the SRAM and is performed when the SRAM is operating. At power-up, the TAP is reset internally to ensure that TDO comes up in a high Z state. TAP Registers Registers are connected between the TDI and TDO pins to scan the data in and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction registers. Data is serially loaded into the TDI pin on the rising edge of TCK. Data is output on the TDO pin on the falling edge of TCK. Document Number: 001-57829 Rev. *H Instruction Register Three-bit instructions are serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO pins, as shown in TAP Controller Block Diagram on page 14. Upon power-up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state, as described in the previous section. When the TAP controller is in the Capture-IR state, the two least significant bits are loaded with a binary “01” pattern to enable fault isolation of the board level serial test path. Bypass Register To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single-bit register that can be placed between TDI and TDO pins. This enables shifting of data through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. Boundary Scan Register The boundary scan register is connected to all of the input and output pins on the SRAM. Several No Connect (NC) pins are also included in the scan register to reserve pins for higher density devices. The boundary scan register is loaded with the contents of the RAM input and output ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO pins when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions are used to capture the contents of the input and output ring. The Boundary Scan Order on page 18 shows the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. Identification (ID) Register The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and is shifted out when the TAP controller is in the Shift-DR state. The ID register has a vendor code and other information described in Identification Register Definitions on page 17. TAP Instruction Set Eight different instructions are possible with the three-bit instruction register. All combinations are listed in Instruction Codes on page 17. Three of these instructions are listed as RESERVED and must not be used. The other five instructions are described in this section in detail. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO pins. To execute the instruction after it is shifted in, the TAP controller must be moved into the Update-IR state. Page 11 of 31 CY7C1423KV18/CY7C1424KV18 IDCODE The IDCODE instruction loads a vendor-specific, 32-bit code into the instruction register. It also places the instruction register between the TDI and TDO pins and shifts the IDCODE out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction is loaded into the instruction register at power up or whenever the TAP controller is supplied a Test-Logic-Reset state. SAMPLE Z The SAMPLE Z instruction connects the boundary scan register between the TDI and TDO pins when the TAP controller is in a Shift-DR state. The SAMPLE Z command puts the output bus into a high Z state until the next command is supplied during the Update IR state. SAMPLE/PRELOAD SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When the SAMPLE/PRELOAD instructions are loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the input and output pins is captured in the boundary scan register. PRELOAD places an initial data pattern at the latched parallel outputs of the boundary scan register cells before the selection of another boundary scan test operation. The shifting of data for the SAMPLE and PRELOAD phases can occur concurrently when required, that is, while the data captured is shifted out, the preloaded data can be shifted in. BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO pins. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. EXTEST The EXTEST instruction drives the preloaded data out through the system output pins. This instruction also connects the boundary scan register for serial access between the TDI and TDO in the Shift-DR controller state. EXTEST OUTPUT BUS TRISTATE IEEE Standard 1149.1 mandates that the TAP controller be able to put the output bus into a tristate mode. The user must be aware that the TAP controller clock can only operate at a frequency up to 20 MHz, while the SRAM clock operates more than an order of magnitude faster. Because there is a large difference in the clock frequencies, it is possible that during the Capture-DR state, an input or output undergoes a transition. The TAP may then try to capture a signal while in transition (metastable state). This does not harm the device, but there is no guarantee as to the value that is captured. Repeatable results may not be possible. The boundary scan register has a special bit located at bit #108. When this scan cell, called the “extest output bus tristate,” is latched into the preload register during the Update-DR state in the TAP controller, it directly controls the state of the output (Q-bus) pins, when the EXTEST is entered as the current instruction. When HIGH, it enables the output buffers to drive the output bus. When LOW, this bit places the output bus into a high Z condition. To guarantee that the boundary scan register captures the correct value of a signal, the SRAM signal must be stabilized long enough to meet the TAP controller’s capture setup plus hold times (tCS and tCH). The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CK and CK captured in the boundary scan register. This bit is set by entering the SAMPLE/PRELOAD or EXTEST command, and then shifting the desired bit into that cell, during the Shift-DR state. During Update-DR, the value loaded into that shift-register cell latches into the preload register. When the EXTEST instruction is entered, this bit directly controls the output Q-bus pins. Note that this bit is pre-set LOW to enable the output when the device is powered up, and also when the TAP controller is in the Test-Logic-Reset state. After the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins. Reserved Document Number: 001-57829 Rev. *H These instructions are not implemented but are reserved for future use. Do not use these instructions. Page 12 of 31 CY7C1423KV18/CY7C1424KV18 TAP Controller State Diagram The state diagram for the TAP controller follows. [11] 1 TEST-LOGIC RESET 0 0 TEST-LOGIC/ IDLE 1 SELECT DR-SCAN 1 1 SELECT IR-SCAN 0 0 1 1 CAPTURE-DR CAPTURE-IR 0 0 SHIFT-DR 0 SHIFT-IR 1 1 EXIT1-DR 1 EXIT1-IR 0 0 PAUSE-IR 1 0 1 EXIT2-DR 0 EXIT2-IR 1 1 UPDATE-IR UPDATE-DR 1 1 0 PAUSE-DR 0 0 0 1 0 Note 11. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document Number: 001-57829 Rev. *H Page 13 of 31 CY7C1423KV18/CY7C1424KV18 TAP Controller Block Diagram 0 Bypass Register 2 Selection Circuitry TDI 1 0 Selection Circuitry Instruction Register 31 30 29 . . 2 1 0 1 0 TDO Identification Register 108 . . . . 2 Boundary Scan Register TCK TAP Controller TMS TAP Electrical Characteristics Over the Operating Range Parameter [12, 13, 14] Description Test Conditions Min Max Unit VOH1 Output HIGH voltage IOH =2.0 mA 1.4 – V VOH2 Output HIGH voltage IOH =100 A 1.6 – V VOL1 Output LOW voltage IOL = 2.0 mA – 0.4 V VOL2 Output LOW voltage IOL = 100 A – 0.2 V VIH Input HIGH voltage VIL Input LOW voltage IX Input and output load current 0.65 × VDD VDD + 0.3 GND VI VDD V –0.3 0.35 × VDD V –5 5 A Notes 12. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics on page 20. 13. Overshoot: VIH(AC) < VDDQ + 0.85 V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > 1.5 V (Pulse width less than tCYC/2). 14. All voltage referenced to ground. Document Number: 001-57829 Rev. *H Page 14 of 31 CY7C1423KV18/CY7C1424KV18 TAP AC Switching Characteristics Over the Operating Range Parameter [15, 16] Description Min Max Unit 50 – ns tTCYC TCK clock cycle time tTF TCK clock frequency – 20 MHz tTH TCK clock HIGH 20 – ns tTL TCK clock LOW 20 – ns tTMSS TMS set-up to TCK clock rise 5 – ns tTDIS TDI set-up to TCK clock rise 5 – ns tCS Capture set-up to TCK rise 5 – ns tTMSH TMS hold after TCK clock rise 5 – ns tTDIH TDI hold after clock rise 5 – ns tCH Capture hold after clock rise 5 – ns tTDOV TCK clock LOW to TDO valid – 10 ns tTDOX TCK clock LOW to TDO invalid 0 – ns Setup Times Hold Times Output Times Notes 15. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register. 16. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns. Document Number: 001-57829 Rev. *H Page 15 of 31 CY7C1423KV18/CY7C1424KV18 TAP Timing and Test Conditions Figure 3 shows the TAP timing and test conditions. [17] Figure 3. TAP Timing and Test Conditions 0.9V ALL INPUT PULSES 1.8V 50 0.9V TDO 0V Z0 = 50 (a) CL = 20 pF tTH GND tTL Test Clock TCK tTMSH tTMSS tTCYC Test Mode Select TMS tTDIS tTDIH Test Data In TDI Test Data Out TDO tTDOV tTDOX Note 17. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns. Document Number: 001-57829 Rev. *H Page 16 of 31 CY7C1423KV18/CY7C1424KV18 Identification Register Definitions Value Instruction Field CY7C1423KV18 Revision number (31:29) 000 000 Cypress device ID (28:12) 11010100010010111 11010100010100111 Cypress JEDEC ID (11:1) 00000110100 00000110100 1 1 ID register presence (0) Description CY7C1424KV18 Version number. Defines the type of SRAM. Allows unique identification of SRAM vendor. Indicates the presence of an ID register. Scan Register Sizes Register Name Bit Size Instruction 3 Bypass 1 ID 32 Boundary scan 109 Instruction Codes Instruction Code Description EXTEST 000 Captures the input and output ring contents. IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operation. SAMPLE Z 010 Captures the input and output contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a high Z state. RESERVED 011 Do Not Use: This instruction is reserved for future use. SAMPLE/PRELOAD 100 Captures the input and output ring contents. Places the boundary scan register between TDI and TDO. Does not affect the SRAM operation. RESERVED 101 Do Not Use: This instruction is reserved for future use. RESERVED 110 Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. Document Number: 001-57829 Rev. *H Page 17 of 31 CY7C1423KV18/CY7C1424KV18 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 28 10G 56 6A 84 1J 1 6P 29 9G 57 5B 85 2J 2 6N 30 11F 58 5A 86 3K 3 7P 31 11G 59 4A 87 3J 4 7N 32 9F 60 5C 88 2K 5 7R 33 10F 61 4B 89 1K 6 8R 34 11E 62 3A 90 2L 7 8P 35 10E 63 2A 91 3L 8 9R 36 10D 64 1A 92 1M 9 11P 37 9E 65 2B 93 1L 10 10P 38 10C 66 3B 94 3N 11 10N 39 11D 67 1C 95 3M 12 9P 40 9C 68 1B 96 1N 13 10M 41 9D 69 3D 97 2M 14 11N 42 11B 70 3C 98 3P 15 9M 43 11C 71 1D 99 2N 16 9N 44 9B 72 2C 100 2P 17 11L 45 10B 73 3E 101 1P 18 11M 46 11A 74 2D 102 3R 19 9L 47 10A 75 2E 103 4R 20 10L 48 9A 76 1E 104 4P 21 11K 49 8B 77 2F 105 5P 22 10K 50 7C 78 3F 106 5N 23 9J 51 6C 79 1G 107 5R 24 9K 52 8A 80 1F 108 Internal 25 10J 53 7A 81 3G 26 11J 54 7B 82 2G 27 11H 55 6B 83 1H Document Number: 001-57829 Rev. *H Page 18 of 31 CY7C1423KV18/CY7C1424KV18 Power Up Sequence in DDR II SRAM PLL Constraints DDR II SRAMs must be powered up and initialized in a predefined manner to prevent undefined operations. ■ PLL uses K clock as its synchronizing input. The input must have low phase jitter, which is specified as tKC Var. ■ The PLL functions at frequencies down to 120 MHz. ■ If the input clock is unstable and the PLL is enabled, then the PLL may lock onto an incorrect frequency, causing unstable SRAM behavior. To avoid this, provide 20 s of stable clock to relock to the desired clock frequency. Power Up Sequence ■ Apply power and drive DOFF either HIGH or LOW (All other inputs can be HIGH or LOW). ❐ Apply VDD before VDDQ. ❐ Apply VDDQ before VREF or at the same time as VREF. ❐ Drive DOFF HIGH. ■ Provide stable DOFF (HIGH), power and clock (K, K) for 20 s to lock the PLL. ~ ~ Figure 4. Power Up Waveforms K K ~ ~ Unstable Clock > 20μs Stable clock Start Normal Operation Clock Start (Clock Starts after V DD / V DDQ Stable) VDD / VDDQ DOFF Document Number: 001-57829 Rev. *H V DD / V DDQ Stable (< +/- 0.1V DC per 50ns ) Fix HIGH (or tie to VDDQ) Page 19 of 31 CY7C1423KV18/CY7C1424KV18 Maximum Ratings Operating Range Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Range Storage temperature ................................ –65 °C to +150 °C Commercial Ambient Temperature (TA) VDD [19] VDDQ [19] 0 °C to +70 °C 1.8 ± 0.1 V 1.4 V to VDD Ambient temperature with power applied ................................... –55 °C to +125 °C Supply voltage on VDD relative to GND .......–0.5 V to +2.9 V Supply voltage on VDDQ relative to GND ...... –0.5 V to +VDD Neutron Soft Error Immunity DC applied to outputs in high Z ........ –0.5 V to VDDQ + 0.3 V DC input voltage [18] ........................... –0.5 V to VDD + 0.3 V Current into outputs (LOW) ........................................ 20 mA Parameter Test Conditions Typ Max* Unit LSBU Logical single-bit upsets 25 °C 197 216 FIT/ Mb LMBU Logical multi-bit upsets 25 °C 0 0.01 FIT/ Mb Single event latch-up 85 °C 0 0.1 FIT/ Dev Static discharge voltage (MIL-STD-883, M. 3015) ......................................... > 2001 V Latch-up current .................................................... > 200 mA Description SEL * No LMBU or SEL events occurred during testing; this column represents a statistical 2, 95% confidence limit calculation. For more details refer to Application Note AN54908 “Accelerated Neutron SER Testing and Calculation of Terrestrial Failure Rates”. Electrical Characteristics Over the Operating Range DC Electrical Characteristics Over the Operating Range Parameter [20] Description Test Conditions Min Typ Max Unit VDD Power supply voltage 1.7 1.8 1.9 V VDDQ IO supply voltage 1.4 1.5 VDD V VOH Output HIGH voltage Note 21 VDDQ/2 – 0.12 – VDDQ/2 + 0.12 V VOL Output LOW voltage Note 22 VDDQ/2 – 0.12 – VDDQ/2 + 0.12 V VOH(LOW) Output HIGH voltage IOH =0.1 mA, nominal impedance VDDQ – 0.2 – VDDQ V VOL(LOW) Output LOW voltage IOL = 0.1 mA, nominal impedance VSS – 0.2 V VIH Input HIGH voltage VREF + 0.1 – VDDQ + 0.3 V VIL Input LOW voltage –0.3 – VREF – 0.1 V IX Input leakage current GND VI VDDQ 5 – 5 A IOZ Output leakage current GND VI VDDQ, output disabled 5 – 5 A 0.68 0.75 0.95 V VREF Input reference voltage [23] Typical Value = 0.75 V Notes 18. Overshoot: VIH(AC) < VDDQ + 0.85 V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > 1.5 V (Pulse width less than tCYC/2). 19. Power-up: assumes a linear ramp from 0 V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD. 20. All voltage referenced to ground. 21. Outputs are impedance controlled. IOH = –(VDDQ/2)/(RQ/5) for values of 175 < RQ < 350 . 22. Outputs are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175 < RQ < 350 . 23. VREF(min) = 0.68 V or 0.46 VDDQ, whichever is larger, VREF(max) = 0.95 V or 0.54 VDDQ, whichever is smaller. Document Number: 001-57829 Rev. *H Page 20 of 31 CY7C1423KV18/CY7C1424KV18 Electrical Characteristics (continued) Over the Operating Range DC Electrical Characteristics (continued) Over the Operating Range Parameter [20] IDD [24] ISB1 Description VDD operating supply Automatic power-down current Test Conditions Min Typ Max Unit VDD = Max, IOUT = 0 mA, 333 MHz (× 18) f = fMAX = 1/tCYC (× 36) – – 490 mA – – 600 300 MHz (× 18) – – 460 mA 250 MHz (× 18) – – 430 mA (× 36) – – 490 333 MHz (× 18) – – 280 (× 36) – – 280 300 MHz (× 18) – – 270 mA 250 MHz (× 18) – – 260 mA (× 36) – – 260 Max VDD, both ports deselected, VIN VIH or VIN VIL f = fMAX = 1/tCYC, inputs static mA Note 24. The operation current is calculated with 50% read cycle and 50% write cycle. Document Number: 001-57829 Rev. *H Page 21 of 31 CY7C1423KV18/CY7C1424KV18 AC Electrical Characteristics Over the Operating Range Parameter [25] Description Test Conditions Min Typ Max Unit VIH Input HIGH voltage VREF + 0.2 – – V VIL Input LOW voltage – – VREF – 0.2 V Max Unit 4 pF 4 pF Capacitance Parameter [26] Description CIN Input capacitance CO Output capacitance Test Conditions TA = 25 C, f = 1 MHz, VDD = 1.8 V, VDDQ = 1.5 V Thermal Resistance Parameter [26] JA (0 m/s) Description Thermal resistance (junction to ambient) JA (1 m/s) 165-ball FBGA Unit Package Test Conditions Socketed on a 170 × 220 × 2.35 mm, eight-layer printed circuit board JA (3 m/s) 16.72 °C/W 15.67 °C/W 14.92 °C/W JB Thermal resistance (junction to board) 13.67 °C/W JC Thermal resistance (junction to case) 4.54 °C/W AC Test Loads and Waveforms Figure 5. AC Test Loads and Waveforms VREF = 0.75 V VREF 0.75 V VREF OUTPUT Z0 = 50 Device Under Test ZQ RL = 50 R = 50 ALL INPUT PULSES 1.25 V 0.75 V OUTPUT Device Under VREF = 0.75 V Test ZQ RQ = 250 (a) 0.75 V INCLUDING JIG AND SCOPE 5 pF [27] 0.25 V Slew Rate = 2 V/ns RQ = 250 (b) Notes 25. Overshoot: VIH(AC) < VDDQ + 0.85 V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > 1.5 V (Pulse width less than tCYC/2). 26. Tested initially and after any design or process change that may affect these parameters. 27. Unless otherwise noted, test conditions are based on signal transition time of 2 V/ns, timing reference levels of 0.75 V, Vref = 0.75 V, RQ = 250 , VDDQ = 1.5 V, input pulse levels of 0.25 V to 1.25 V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of Figure 5. Document Number: 001-57829 Rev. *H Page 22 of 31 CY7C1423KV18/CY7C1424KV18 Switching Characteristics Over the Operating Range Parameters [28, 29] Cypress Consortium Parameter Parameter 333 MHz Description VDD(typical) to the first access [30] tPOWER 300 MHz 250 MHz Unit Min Max Min Max Min Max 1 – 1 – 1 – ms tCYC tKHKH K clock and C clock cycle time 3.0 8.4 3.3 8.4 4.0 8.4 ns tKH tKHKL Input clock (K/K; C/C) HIGH 1.20 – 1.32 – 1.6 – ns tKL tKLKH Input clock (K/K; C/C) LOW 1.20 – 1.32 – 1.6 – ns tKHKH tKHKH K clock rise to K clock rise and C to C rise (rising edge to rising edge) 1.35 – 1.49 – 1.8 – ns tKHCH tKHCH K/K clock rise to C/C clock rise (rising edge to rising edge) 0 1.30 0 1.45 0 1.8 ns Setup Times tSA tAVKH Address set-up to K clock rise 0.4 – 0.4 – 0.5 – ns tSC tIVKH Control set-up to K clock rise (LD, R/W) 0.4 – 0.4 – 0.5 – ns tSCDDR tIVKH Double data rate control set-up to clock (K/K) rise (BWS0, BWS1, BWS2, BWS3) 0.3 – 0.3 – 0.35 – ns tSD tDVKH D[X:0] set-up to clock (K/K) rise 0.3 – 0.3 – 0.35 – ns tHA tKHAX Address hold after K clock rise 0.4 – 0.4 – 0.5 – ns tHC tKHIX Control hold after K clock rise (LD, R/W) 0.4 – 0.4 – 0.5 – ns tHCDDR tKHIX Double data rate control hold after clock (K/K) rise (BWS0, BWS1, BWS2, BWS3) 0.3 – 0.3 – 0.35 – ns tHD tKHDX D[X:0] hold after clock (K/K) rise 0.3 – 0.3 – 0.35 – ns Hold Times Notes 28. Unless otherwise noted, test conditions are based on signal transition time of 2 V/ns, timing reference levels of 0.75 V, Vref = 0.75 V, RQ = 250 , VDDQ = 1.5 V, input pulse levels of 0.25 V to 1.25 V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of Figure 5 on page 22. 29. When a part with a maximum frequency above 167 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is operated and outputs data with the output timings of that frequency range. 30. This part has a voltage regulator internally; tPOWER is the time that the power must be supplied above VDD(minimum) initially before a read or write operation can be initiated. Document Number: 001-57829 Rev. *H Page 23 of 31 CY7C1423KV18/CY7C1424KV18 Switching Characteristics (continued) Over the Operating Range Parameters [28, 29] Cypress Consortium Parameter Parameter 333 MHz Description 300 MHz 250 MHz Unit Min Max Min Max Min Max – 0.45 – 0.45 – 0.45 ns Output Times tCO tCHQV C/C clock rise (or K/K in single clock mode) to data valid tDOH tCHQX Data output hold after output C/C clock rise (active to active) –0.45 – –0.45 – –0.45 – ns tCCQO tCHCQV C/C clock rise to echo clock valid – 0.45 – 0.45 – 0.45 ns tCQOH tCHCQX Echo clock hold after C/C clock rise –0.45 – –0.45 – –0.45 – ns tCQD tCQHQV Echo clock high to data valid – 0.25 – 0.27 – 0.30 ns tCQDOH tCQHQX Echo clock high to data invalid –0.25 – –0.27 – –0.30 – ns 1.25 – 1.40 – 1.75 – ns 1.25 – 1.40 – 1.75 – ns [31] tCQH tCQHCQL Output clock (CQ/CQ) HIGH tCQHCQH tCQHCQH CQ clock rise to CQ clock rise (rising edge to rising edge) [31] tCHZ tCHQZ Clock (C/C) rise to high Z (active to high Z) [32, 33] – 0.45 – 0.45 – 0.45 ns tCLZ tCHQX1 Clock (C/C) rise to low Z [32, 33] –0.45 – –0.45 – –0.45 – ns tKC Var Clock phase jitter – 0.20 – 0.20 – 0.20 ns 20 – 20 – 20 – s 30 – 30 – 30 – ns PLL Timing tKC Var tKC lock tKC lock PLL lock time (K, C) tKC Reset tKC Reset K static to PLL reset [34] Notes 31. These parameters are extrapolated from the input timing parameters (tCYC/2 – 250 ps, where 250 ps is the internal jitter). These parameters are only guaranteed by design and are not tested in production 32. tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in (b) of Figure 5 on page 22. Transition is measured ±100 mV from steady-state voltage. 33. At any voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO. 34. For frequencies 300 MHz or below, the Cypress QDR II devices surpass the QDR consortium specification for PLL lock time (tKC lock) of 20 µs (min. spec.) and will lock after 1024 clock cycles (min. spec.), after a stable clock is presented, per the previous 90 nm version. Document Number: 001-57829 Rev. *H Page 24 of 31 CY7C1423KV18/CY7C1424KV18 Switching Waveforms Figure 6. Read/Write/Deselect Sequence [35, 36, 37] NOP READ (burst of 2) 2 1 READ (burst of 2) 3 WRITE (burst of 2) 5 WRITE (burst of 2) 4 READ (burst of 2) 6 NOP 7 8 K tKH tCYC tKL tKHKH K LD t SC tHC R/W A A0 tSA A1 A2 A3 A4 tHD tHD tHA tSD tSD D D20 Q00 Q t KHCH t Q01 tCQD t CLZ Q10 D21 D31 Q11 Q40 Q41 tDOH KHCH tCO D30 t CHZ tCQDOH C tKH tCYC tKL tKHKH C# tCQOH tCCQO CQ tCQOH tCCQO tCQH tCQHCQH CQ# DON’T CARE UNDEFINED Notes 35. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0 + 1. 36. Outputs are disabled (high Z) one clock cycle after a NOP. 37. In this example, if address A4 = A3, then data Q40 = D30 and Q41 = D31. Write data is forwarded immediately as read results. This note applies to the whole diagram. Document Number: 001-57829 Rev. *H Page 25 of 31 CY7C1423KV18/CY7C1424KV18 Ordering Information The following table contains only the parts that are currently available. If you do not see what you are looking for, contact your local sales representative. For more information, visit the Cypress website at www.cypress.com and refer to the product summary page at http://www.cypress.com/products Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives and distributors. To find the office closest to you, visit us at http://www.cypress.com/go/datasheet/offices. Speed (MHz) 333 Ordering Code CY7C1424KV18-333BZC Package Diagram 51-85180 165-ball FBGA (13 × 15 × 1.4 mm) CY7C1423KV18-333BZXC 300 CY7C1423KV18-300BZC CY7C1423KV18-250BZC Operating Range Commercial 165-ball FBGA (13 × 15 × 1.4 mm) Pb-free 51-85180 165-ball FBGA (13 × 15 × 1.4 mm) CY7C1423KV18-300BZXC 250 Package Type Commercial 165-ball FBGA (13 × 15 × 1.4 mm) Pb-free 51-85180 165-ball FBGA (13 × 15 × 1.4 mm) Commercial CY7C1424KV18-250BZC CY7C1423KV18-250BZXC 165-ball FBGA (13 × 15 × 1.4 mm) Pb-free Ordering Code Definitions CY 7 C 14XX K V18 - XXX BZ X C Temperature Range: C = Commercial = 0 C to +70 C X = Pb-free; X Absent = Leaded Package Type: BZ = 165-ball FBGA Speed Grade: XXX = 333 MHz or 300 MHz or 250 MHz V18 = 1.8 V VDD Process Technology: K = 65 nm Part Identifier: 14XX = 1423 or 1424 Technology Code: C = CMOS Marketing Code: 7 = SRAM Company ID: CY = Cypress Document Number: 001-57829 Rev. *H Page 26 of 31 CY7C1423KV18/CY7C1424KV18 Package Diagram Figure 7. 165-ball FBGA (13 × 15 × 1.4 mm) BB165D/BW165D (0.5 Ball Diameter) Package Outline, 51-85180 51-85180 *G Document Number: 001-57829 Rev. *H Page 27 of 31 CY7C1423KV18/CY7C1424KV18 Acronyms Acronym Document Conventions Description Units of Measure DDR Double Data Rate FBGA Fine-Pitch Ball Grid Array °C degree Celsius HSTL High-Speed Transceiver Logic k kilohm I/O Input/Output MHz megahertz JTAG Joint Test Action Group µA microampere LMBU Logical Multiple Bit Upset µs microsecond LSB Least Significant Bit mA milliampere LSBU Logical Single Bit Upset mm millimeter MSB Most Significant Bit ms millisecond PLL Phase Locked Loop Symbol Unit of Measure ns nanosecond ohm % percent pF picofarad SEL Single Event Latch-up SRAM Static Random Access Memory TAP Test Access Port V volt TCK Test Clock W watt TMS Test Mode Select TDI Test Data-In TDO Test Data-Out TQFP Thin Quad Flat Pack Document Number: 001-57829 Rev. *H Page 28 of 31 CY7C1423KV18/CY7C1424KV18 Document History Page Document Title: CY7C1423KV18/CY7C1424KV18, 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture Document Number: 001-57829 Rev. ECN Orig. of Change Submission Date ** 2816620 VKN / AESA 11/27/2009 New data sheet. *A 3068457 NJY 10/21/2010 Changed status from Preliminary to Final. Added Ordering Code Definitions. Updated Package Diagram. Minor edits. Updated to new template. *B 3167511 NJY 02/09/2011 Updated Switching Characteristics (Added Note 34 and referred the same note in description of tKC lock parameter). Updated Ordering Information. Added Acronyms and Units of Measure. *C 3401884 PRIT 10/11/2011 Updated Pin Configurations (Changed part numbers from CY7C1423KV18 (4 M × 18) and CY7C1424KV18 (2 M × 36) to CY7C1423KV18 (2 M × 18) and CY7C1424KV18 (1 M × 36) in Figure 1). *D 3609945 AVIA / PRIT 05/07/2012 Updated Features (Removed CY7C1422KV18, CY7C1429KV18 related information). Updated Configurations (Removed CY7C1422KV18, CY7C1429KV18 related information). Updated Functional Description (Removed CY7C1422KV18, CY7C1429KV18 related information). Updated Selection Guide (Removed 200 MHz, 167 MHz related information, removed CY7C1422KV18, CY7C1429KV18 related information). Removed Logic Block Diagram – CY7C1422KV18. Removed Logic Block Diagram – CY7C1429KV18. Updated Pin Configurations (Removed CY7C1422KV18, CY7C1429KV18 related information). Updated Pin Definitions (Removed CY7C1422KV18, CY7C1429KV18 related information). Updated Functional Overview (Removed CY7C1422KV18, CY7C1429KV18 related information). Updated Truth Table (Removed CY7C1422KV18, CY7C1429KV18 related information). Updated Write Cycle Descriptions (Removed CY7C1422KV18 related information). Removed Write Cycle Descriptions (Corresponding to CY7C1429KV18). Updated Identification Register Definitions (Removed CY7C1422KV18, CY7C1429KV18 related information). Updated Operating Range (Removed Industrial Temperature Range). Updated Electrical Characteristics (Updated DC Electrical Characteristics (Removed 200 MHz, 167 MHz related information, removed CY7C1422KV18, CY7C1429KV18 related information)). Updated Switching Characteristics (Removed 200 MHz, 167 MHz related information). Updated Package Diagram (spec 51-85180 (changed revision from *C to *E)). *E 3793879 PRIT 10/25/2012 Updated Package Diagram (spec 51-85180 (Changed revision from *E to *F)). *F 4373836 PRIT 05/08/2014 Updated Application Example: Updated Figure 2. Updated Thermal Resistance: Updated values of JA parameter. Included JB parameter and its details. Updated to new template. Document Number: 001-57829 Rev. *H Description of Change Page 29 of 31 CY7C1423KV18/CY7C1424KV18 Document History Page (continued) Document Title: CY7C1423KV18/CY7C1424KV18, 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture Document Number: 001-57829 Rev. ECN Orig. of Change Submission Date *G 4567876 PRIT 11/12/2014 Updated Functional Description: Added “For a complete list of related documentation, click here.” at the end. Updated Ordering Information: Updated part numbers. *H 5063647 PRIT 12/24/2015 Updated Package Diagram: spec 51-85180 – Changed revision from *F to *G. Updated to new template. Completing Sunset Review. Document Number: 001-57829 Rev. *H Description of Change Page 30 of 31 CY7C1423KV18/CY7C1424KV18 Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. PSoC® Solutions Products Automotive Clocks & Buffers Interface Lighting & Power Control cypress.com/go/automotive cypress.com/go/clocks cypress.com/go/interface cypress.com/go/powerpsoc cypress.com/go/plc Memory PSoC Touch Sensing USB Controllers Wireless/RF cypress.com/go/memory cypress.com/go/psoc psoc.cypress.com/solutions PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP Cypress Developer Community Community | Forums | Blogs | Video | Training Technical Support cypress.com/go/support cypress.com/go/touch cypress.com/go/USB cypress.com/go/wireless © Cypress Semiconductor Corporation, 2009-2015. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 001-57829 Rev. *H Revised December 24, 2015 Page 31 of 31 QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All products and company names mentioned in this document may be the trademarks of their respective holders.