INTEGRATED CIRCUITS SA910 Variable gain RF predriver amplifier Product specification 1997 Aug 12 Philips Semiconductors Product specification Variable gain RF predriver amplifier SA910 DESCRIPTION PIN CONFIGURATION The SA910 is a variable gain predriver amplifier designed for handheld analog cellular telephones. When used with a UHF power transistor, it forms a cost-effective, low-profile, surface mount power amplifier solution (1.2W maximum PAE > 50%). The SA910 integrates power detection and control circuitry that is stabilized over temperature and voltage. In power down mode, the SA910 draws less than 10µA of current. The SA910 is fabricated using Philips QUBiC BiCMOS process. FEATURES • MMIC BiCMOS predriver amplifier • Low voltage 2.7 to 5.5V single supply operation • 820 to 905MHz bandwidth • High power gain >20dB • High power output >23dBm (typical) @ 3V • Efficiency = 35% (typical) • Wide gain control range: >32dB • Few external components required • Integrated power detector and comparison gain control circuitry • 50Ω input, open-collector output • SSOP-20 package • Integrated regulator with offset adjustment for biasing an external VCC1 1 20 VREF 2 19 BIASOUT GND 3 18 GND PSENSE RFIN 4 17 RFOUT1 GND 5 16 GND GND 6 15 GND OUTLPF 7 14 RFOUT2 GND 8 13 GND VC 9 12 PWRUP VCC BIAS 10 11 OFFSET SR01067 APPLICATIONS • 900MHz analog cellular • Handheld transmitting equipment in the 820 to 905MHz frequency range • Cordless phone output stage 1997 Aug 12 2 853–2021 18269 Philips Semiconductors Product specification Variable gain RF predriver amplifier SA910 C1 10NF 20 1 VCC1 +3V 2 Vref C2 10NF 3 4 RFIN 5 VCC1 P SENSE VREF BIAS OUT 19 GND GND RFIN RF OUT1 GND SA910 GND 6 GND GND 7 VC C3 100NF R1 1K 8 OUT LPF GND RFOUT2 GND 9 VC PWR UP VCC BIAS OFFSET 10 VCC1 +3V BIAS OUT 18 C8 33pF L3 1.8nH 17 VCC2 +3.6V C7 33PF 16 15 C4 8.2PF 14 L1 33nH 13 C9 0.5PF W = 55MILS L = 180MILS H = 62MILS FR–4 RF OUT 50 C6 5.6PF L2 3.3nH 12 11 VCC2 +3.6V POWER UP C5 33pF BIAS ADJUST SR01535 Figure 1. Application Diagram ORDERING INFORMATION DESCRIPTION 20-Pin Plastic SSOP (Shrink Small Outline Package) 1997 Aug 12 3 TEMPERATURE RANGE ORDER CODE DWG # -40 to +85°C SA910 SOT266-1 Philips Semiconductors Product specification Variable gain RF predriver amplifier SA910 Notes: All caps are MMC 0603, Inductors: Toko LL2012 SR01547 Figure 2. Application Board Layout of SA910 1997 Aug 12 4 Philips Semiconductors Product specification Variable gain RF predriver amplifier SA910 130 VCC1 VCC1 C28 0.1uF VREF C23 0.001uF VREF C27 0.001uF OUTLPF R15 1K RFin 0 OHM RESI VCC1 C13 0. 1000pf 0 OHM RES GND RFIN RFOUT2 GND BIASOUT VC VC RFOUT1 4.7 uF ON–CHIP BIAS EXTERNAL AMP BIAS VCCBIAS C15 0.001uF R19 10K PSENSE SA 910 L3 1.8nH C21 0.1uF C26 0.001uF L1 33nH C20 0.001uF C25 0.1uF VCC2 ATTENUATOR/ C7 6.8pF OFFSET R17 10K L4 3.9nH L2 5.6nH C6 3.3pF SPLITTER RFout C24 0.001uF PWRUP C14 0.1uF VPWRUP C24 0.001uF TO PSENSE R9 18 R3 68 R4 100 R8 16.9 R5 100 RFOUT R10 18 ATTENUATOR/SPLITTER NETWORK SR01548 Figure 3. Test Circuit Used In Characterizing SA910 BLOCK DIAGRAM PSENSE VCC1 VREF RFOUT1 OUTLPF RFIN A1 A2 RFOUT2 GND GND VC ON-CHIP BIAS EXTERNAL AMP BIAS BIASOUT OFFSET PWRUP VCC BIAS SR01068 Figure 4. Block Diagram 1997 Aug 12 5 Philips Semiconductors Product specification Variable gain RF predriver amplifier SA910 PIN DESCRIPTIONS Pin No. Mnemonic 1 VCC1 Power supply for power sense loop and off-chip bias 2 VREF Power sense reference voltage input 3 GND Ground 4 RFIN Pre-driver input 5 GND Ground 6 GND Ground 7 OUTLPF 8 GND 9 VC 10 VCC BIAS Power supply for on-chip bias 11 OFFSET External power amp bias offset adjustment 12 PWRUP Power-up input Function Power sense detected output Ground Gain control input 13 GND 14 RFOUT2 Ground 15 GND Ground 16 GND Ground 17 RFOUT1 Pre-driver output (open collector) Output of first stage (open collector) 18 GND 19 BIASOUT Ground Output to bias external power amplifier stage 20 PSENSE Power sense input ABSOLUTE MAXIMUM RATINGS SYMBOL VCC1/VCCBIAS PARAMETER DC supply voltages Voltage applied to any other pin1 RATING UNITS -0.3 to +6.0 V -0.3 to (VCC1 + 0.3) V 1.0 W PD Power dissipation PIN Input drive power 5 mW PDET Input detect power 20 mW Load power 500 mW -65 to +150 °C RATING UNITS PL TSTG Storage temperature range NOTE: 1. Except RFOUT1 and RFOUT2 which can have 8V max. RECOMMENDED OPERATING CONDITIONS SYMBOL VCC1/VCCBIAS TA PARAMETER Supply voltage Operating ambient temperature range NOTE: 1. Rth = 75° c/w 1997 Aug 12 6 3 to 3.6 V -40 to +85 °C Philips Semiconductors Product specification Variable gain RF predriver amplifier SA910 AC ELECTRICAL CHARACTERISTICS VCC1 = VCCBIAS = +3V;VCC(RFOUT1, RFOUT2) = 3.6V; TA = 25°C, ZS = ZL = 50Ω; VC = 2V; RFIN = 0dBm @ 830MHz; unless otherwise stated. SYMBOL PARAMETER TEST CONDITIONS LIMITS UNITS MIN TYP MAX 820 830 905 21 5 21.5 24 dBm RFin = –20dBm 31 dB Power added efficiency PL = 24dBm 35 % S11 Input return loss RFin = 0dBm –12 dB GC Gain control range from Vc = 0.7 to 2V S12 Reverse isolation -40 dB Gain at RFOUT2 during power-down (RFIN = -20dBm) -30 dB Power detector range 25 dB fRF Frequency range PL Load power at RFOUT2 O S21 Small signal gain η GOFF PSENSE Saturated1 dP/dV <120dB/V NOTE: 1. Needs proper output matching. 1997 Aug 12 7 32 MHz dB Philips Semiconductors Product specification Variable gain RF predriver amplifier SA910 DC ELECTRICAL CHARACTERISTICS VCC1 = VCCBIAS = +3V, VCC (RFOUT1, RFOUT2) = 3.6V; TA = 25°C, ZS = ZL = 50Ω, ; unless otherwise stated. SYMBOL VCC PARAMETER TEST CONDITIONS Power supply voltage range 2.7 ICC Total DC current from all VCC Pin 12 = HIGH; Pin 9 > VBE IZB ICC under zero bias mode Pin 12 = HIGH; Pin 9 < VBE IOFF Powerdown current IPU Input current to PWRUP VPU Input level for PWRUP (Pin 12) LIMITS MIN +3σ MAX UNITS 3.0 5.5 V 210 300 mA 0.7 mA µA Pin 12 = LOW 10 100 Pin 12 = LOW 10 µA Pin 12 = LOW 0 0.3VCC V Pin 12 = HIGH 0.7VCC VCC V 1 µA 0 2.0 V IREF Input current to VREF (Pin 2) Power control reference voltage (Pin 1) VBIAS BiasOUT voltage (Pin 19) (unadjusted) IBIAS DC current available @ Bias-OUT (Pin 19) 30 Control voltage (Pin 9) range 0 1997 Aug 12 TYP Pin 12 = HIGH VREF VC -3σ VC = 2.0V 8 0.68 V mA 2 V Philips Semiconductors Product specification Variable gain RF predriver amplifier SA910 VCC1 = 3.0V, VCC2 = 3.6V, INPUT FREQ = 830 MHZ T = 25C, input Freq = 830 MHz 50 30 40 25 % dBm VC = 2.0V 30 20 20 15 10 0 –0 –2 –4 –6 –8 –10 –12 –14 –16 –18 –20 10 –20 –18 –16 –14 –12 –10 –8 –6 –4 0 –2 dBm dBm VCC = 3.0V, VC = 2.0V VCC= 5.5V, VC = 1.7V T = 27C VCC = 2.7V, VC = 2.5V T = –40C T = 85C SR01524 Figure 8. PAE VS Input Power SR01521 Figure 5. Output Power VS Input Power T = 25C, Pin = 0dBm VCC1 = 3.0V, VCC2 = 3.6V, INPUT FREQ = 830 MHZ 30 40 25 db 20 dBm VC = 2.0V 36 32 28 24 15 20 –20 –18 –16 –14 –12 –10 –8 –6 –4 –2 0 dbm 900 890 880 870 860 850 840 830 820 10 T = 27C MHz T = 85C VCC = 3.0 V, VC = 2.0 V T = –40C VCC = 5.5 V, VC = 1.7 V SR01525 VCC = 2.7 V, VC = 2.5 V Figure 9. Signal Gain VS Input Power SR01522 Figure 6. Output Power VS Input Frequency VCC1 = 3.0V, VCC2 = 3.6V, Pin = 0dBm VCC1 = 3.0V, VCC2 = 3.6V, Pin = –20 dBm 30 40 25 35 20 VC = 2.0V db dBm VC = 2.0V 15 25 10 820 30 830 840 850 860 870 880 890 20 820 900 MHz 840 850 860 870 880 890 900 MHz T = 27C T = 27C T = 85C T = 85C T = –40C T = –40C Figure 10. Signal Gain VS Input Frequency SR01523 Figure 7. Output Power VS Input Frequency 1997 Aug 12 830 9 SR01526 Philips Semiconductors Product specification Variable gain RF predriver amplifier SA910 VCC1 = 3.0V, VCC2 = 3.6V, PIN = 0dBm 30 35 20 10 30 dBm 0 25 –10 20 –20 –6 –4 –2 0 –30 –40 VCC =3.0V, VC = 2.0V VCC =5.5V, VC = 1.7V 2.0 –8 1.7 –10 dBm 1.5 –12 1.3 –14 1.1 –16 0.9 –18 0.7 –20 INPUT FREQ = 830 MHz 0.5 dB T = 25C, Input Freq = 830 MHz, Pin = –20dBm 40 Volts VCC =2.7V, VC = 2.5V T = 27C SR01527a T = 85C Figure 11. Signal Gain VS Input Power T = –40C SR01530 T = 25C, Pin = –20 dBm Figure 14. Output Power VS VC 40 VCC1 = 3.0V, VCC2 = 3.6V, Pin = 0 dBm 30 25 30 dBm 25 20 INPUT FREQ = 830MHz 15 VOLTS MHz VCC =3.0V, VC = 2.0V VCC =5.5V, VC = 1.7V T = 27C VCC =2.7V, VC = 2.5V T = –40C 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 0.8 900 890 880 870 860 850 840 830 820 1 10 20 0.9 dB 35 T = 85C SR01531 SR01528 Figure 15. Output Power VS VREF (Closed Loop) Figure 12. Signal Gain VS Input Frequency T = 27C, INPUT FREQ = 830 MHz, PIN = 0 dBm 30 VCC1 = 3.0V, VCC2 = 3.6V, INPUT FREQ = 830 MHZ 25 dBm 30 VC =2.0V 15 25 T = 27C 15 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1 1.1 T = –40C 0.9 10 T = 85C 20 0.8 dBm 20 VOLTS VCC = 3.0V VCC = 5.5V 10 0 –4 –8 –12 –16 –20 VCC = 2.7V dBm SR01537 SR01529 Figure 16. Output Power VS VREF (Closed Loop) Figure 13. Output Power VS Input Power 1997 Aug 12 10 Philips Semiconductors Product specification Variable gain RF predriver amplifier SA910 VCC1 = 3.0V, VCC2 = 3.6V, T = 25°C T = 25°C, Input Freq = 830 MHz 40 40 30 20 35 30 % PIN = –20dBm@830 MHz dB 10 25 0 –10 20 –20 –30 15 10 0 –18 –16 –14 –12 –10 dBm –8 –6 –4 –2 0 SR01532 Figure 17. PAE VS Input Power POWER DISSIPATION (WATTS) (135 – TA ) °C 75°C/W 0W 135°C AMBIENT OPERATING TEMPERATURE SR01533 Figure 18. Power De–Rating Curve 1997 Aug 12 2.5 2.3 2.1 1.9 1.7 1.5 Figure 19. Small Signal Gain VS VC VCC = 2.7 V, VC = 2.5 V 60°C 1.3 SR01534 VCC = 5.5 V, VC = 1.7 V PD = 1.1 VC (VOLTS) VCC = 3.0 V, VC = 2.0 V 1W 0.9 0.5 –20 0.7 –40 5 11 Philips Semiconductors Product specification Variable gain RF predriver amplifier SA910 SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm 1997 Aug 12 12 SOT266-1 Philips Semiconductors Product specification Variable gain RF predriver amplifier SA910 Data sheet status Data sheet status Product status Definition [1] Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. [1] Please consult the most recently issued datasheet before initiating or completing a design. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Disclaimers Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Copyright Philips Electronics North America Corporation 1998 All rights reserved. Printed in U.S.A. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381 print code Document order number: 1997 Aug 12 13 Date of release: 05-96 9397 750 03884