INTEGRATED CIRCUITS NE/SE5539 High frequency operational amplifier Product data Supersedes data of 2001 Aug 03 File under Integrated Circuits, IC11 Data Handbook 2002 Jan 25 Philips Semiconductors Product data High frequency operational amplifier DESCRIPTION NE/SE5539 PIN CONFIGURATION The NE/SE5539 is a very wide bandwidth, high slew rate, monolithic operational amplifier for use in video amplifiers, RF amplifiers, and extremely high slew rate amplifiers. D, N Packages Emitter-follower inputs provide a true differential input impedance device. Proper external compensation will allow design operation over a wide range of closed-loop gains, both inverting and non-inverting, to meet specific design requirements. FEATURES • Bandwidth – Unity gain: 350 MHz – Full power: 48 MHz + INPUT 1 14 – INPUT NC 2 13 NC –VSUPPLY 3 12 FREQUENCY COMPENS. NC 4 11 NC VOSADJ/ AV ADJ 5 10 +V NC 6 9 NC GROUND 7 8 OUTPUT + – – GBW: 1.2 GHz at 17 dB • Slew rate: 600/Vµs • AVOL: 52 dB typical • Low noise: 4 nV√Hz typical TOP VIEW SL00570 Figure 1. Pin Configuration APPLICATIONS • High speed datacom • Video monitors & TV • Satellite communications • Image processing • RF instrumentation & oscillators • Magnetic storage ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # 14-Pin Plastic Dual In-Line Package (DIP) 0 °C to +70 °C NE5539N SOT27-1 14-Pin Plastic Small Outline (SO) package 0 °C to +70 °C NE5539D SOT108-1 14-Pin Plastic Dual In-Line Package (DIP) –55 °C to +125 °C SE5539N SOT27-1 ABSOLUTE MAXIMUM RATINGS1 SYMBOL VCC PD(max) PARAMETER Supply voltage Maximum power dissipation; Tamb = 25 °C N package D package RATING UNITS ±12 V 1.45 0.99 W W (still-air)2 Tamb Operating temperature range NE5539D, NE5539N SE5539N 0 to +70 –55 to +125 °C °C Tstg Storage temperature range –65 to +150 °C Max junction temperature +150 °C Lead soldering temperature (10 sec max) +230 °C Tj Tsld NOTES: 1. Differential input voltage should not exceed 0.25 V to prevent excessive input bias current and common-mode voltage 2.5 V. These voltage limits may be exceeded if current is limited to less than 10 mA. 2. Derate above 25 °C, at the following rates: N package at 11.6 mW/°C D package at 7.9 mW/°C 2002 Jan 25 2 853-0814 27610 Philips Semiconductors Product data High frequency operational amplifier NE/SE5539 EQUIVALENT CIRCUIT (12) FREQUENCY COMP. (10) +VCC R18 R19 R3 R5 (–) 14 INVERTING INPUT R2 R6 (+) 1 NON–INVERTING INPUT Q1 Q6 R8 Q4 Q5 Q3 Q2 Q7 Q8 R20 R21 R1 (8) OUTPUT R4 R9 R10 2.2k (7) GRD R13 Q9 Q10 R11 Q11 R12 R7 R15 R14 R16 R17 (3) –VCC 5 SL00571 Figure 2. Equivalent Circuit 2002 Jan 25 3 Philips Semiconductors Product data High frequency operational amplifier NE/SE5539 DC ELECTRICAL CHARACTERISTICS VCC = ±8 V, Tamb = 25 °C; unless otherwise specified. SYMBOL VOS PARAMETER Input offset voltage TEST CONDITIONS VO = 0 V; RS = 100 Ω SE5539 MIN MAX Over temp. 2 5 Tamb = 25 °C 2 3 ∆VOS/∆T IOS Input offset current Over temp. 0.1 3 0.1 1 Over temp. 6 25 Tamb = 25 °C 5 13 RIN ROUT VOUT O 70 80 Over temp. 70 80 µV/°C nA/°C 20 10 70 µA µA nA/°C 80 dB 100 100 kΩ 10 10 Ω Output voltage swing ICC– CC Negative supply current Power supply rejection ratio RL = 150 Ω to GND and 470 Ω to –VCC +Swing +2.3 +2.7 –Swing –1.7 –2.2 RL = 25 Ω to GND Over temp. +Swing +2.3 +3.0 –Swing –1.5 –2.1 RL = 25 Ω to GND Tamb = 25 °C +Swing +2.5 +3.1 –Swing –2.0 –2.7 L Large signal i l voltage lt gain i V V V VO = 0 V, R1 = ∞; Over temp. 14 18 VO = 0 V, R1 = ∞; Tamb = 25 °C 14 17 VO = 0 V, R1 = ∞; Over temp. 11 15 VO = 0 V, R1 = ∞; Tamb = 25 °C 11 14 ∆VCC = ±1 V; Over temp. 300 1000 14 18 11 15 200 1000 47 52 57 47 52 57 ∆VCC = ±1 V; Tamb = 25 °C VO = +2.3 V, –1.7 V; RL = 150 Ω to GND, 470 Ω to –VCC 2002 Jan 25 5 mV Output impedance Positive supply current AVOL 5 UNITS Input impedance ICC+ CC PSRR F = 1 kHz; RS = 100 Ω; VCM ±1.7 V 2.5 0.5 10 Common mode rejection ratio MAX 2 0.5 Input bias current TYP 5 Tamb = 25 °C ∆IB/∆T CMRR MIN 5 ∆IOS/∆T IB NE5539 TYP Over temp. VO = +2.3 V,, –1.7 V; RL = 2 Ω to GND Tamb = 25 °C VO = +2.5 V,, –2.0 V; RL = 2 Ω to GND Over temp. 46 Tamb = 25 °C 48 4 60 53 58 mA mA µV/V dB dB dB Philips Semiconductors Product data High frequency operational amplifier NE/SE5539 DC ELECTRICAL CHARACTERISTICS VCC = ±6 V, Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER VOS Input offset voltage IOS Input offset current IB Input bias current CMRR Common-mode rejection ratio ICC+ CC Positive supply current ICC– CC Negative supply current PSRR VOUT O 2002 Jan 25 Power supply rejection ratio Output voltage swing SE5539 TEST CONDITIONS MIN TYP MAX Over temp. 2 5 Tamb = 25 °C 2 3 Over temp. 0.1 3 Tamb = 25 °C 0.1 1 Over temp. 5 20 Tamb = 25 °C 4 10 VCM = ±1.3 V; RS = 100 Ω ∆VCC = ±1 V RL = 150 Ω to GND and 390 Ω to –VCC 5 Over temp temp. Tamb = 25 °C 70 85 11 14 Tamb = 25 °C 11 13 Over temp. 8 11 Tamb = 25° C 8 10 Over temp. 300 1000 +Swing +1.4 mV µA µA dB Over temp. Tamb = 25 °C UNITS mA mA µV/V +2.0 –Swing –1.1 –1.7 +Swing +1.5 +2.0 –Swing –1.4 –1.8 V Philips Semiconductors Product data High frequency operational amplifier NE/SE5539 AC ELECTRICAL CHARACTERISTICS VCC = ±8 V, RL = 150 Ω to GND and 470 Ω to –VCC, unless otherwise specified. SYMBOL PARAMETER BW TEST CONDITIONS Gain bandwidth product tS SE5539 MIN TYP ACL = 7, VO = 0.1 VP-P NE5539 MAX MIN TYP MAX UNITS 1200 1200 MHz Small signal bandwidth ACL = 2, RL = 150 Ω1 110 110 MHz Settling time ACL = 2, RL = 150 Ω1 15 15 ns Ω1 V/µs SR Slew rate ACL = 2, RL = 150 600 600 tPD Propagation delay ACL = 2, RL = 150 Ω1 7 7 ns Full power response ACL = 2, RL = 150 Ω1 48 48 MHz Full power response AV = 7, RL = 150 Ω1 20 20 MHz Input noise voltage RS = 50 Ω, 1 MHz 4 4 nV/√Hz Input noise current 1 MHz 6 6 pA/√Hz NOTE: 1. External compensation. AC ELECTRICAL CHARACTERISTICS VCC = ±6 V, RL = 150 Ω to GND and 390 Ω to –VCC, unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS Gain bandwidth product BW SE5539 MIN TYP ACL = 7 700 21 120 UNITS MAX MHz Small signal bandwidth ACL = tS Settling time ACL = 21 23 ns SR Slew rate ACL = 21 330 V/µs tPD Propagation delay ACL = 21 4.5 ns Full power response ACL = 21 20 MHz NOTE: 1. External compensation. TYPICAL PERFORMANCE CURVES NE5539 Open-Loop Gain NE5539 Open-Loop Phase 60 50 40 90 GAIN (dB) PHASE (DEG) 0 180 30 20 270 10 360 1 MHz 10MHz 100MHz 0 1 MHz 1GHz FREQUENCY (Hz) 100MHz 1GHz FREQUENCY (Hz) SL00572 SL00573 Figure 3. NE5539 Open-Loop Phase 2002 Jan 25 10MHz Figure 4. NE5539 Open-Loop Gain 6 Philips Semiconductors Product data High frequency operational amplifier NE/SE5539 TYPICAL PERFORMANCE CURVES (Continued) Power Bandwidth (SE) Power Bandwidth (NE) 4 5 p–p OUTPUT (V) p–p OUTPUT (V) 3 4 3dB B.W 3 2 GAIN (—2) VCC = +8V RL = 2kΩ 3dB B.W. 2 VCC = +6V RL = 150kΩ GAIN (—2) 1 0 1 MHz 1 1 MHz 10MHz 100MHz 10MHz 100MHz 300Mhz FREQUENCY (Hz) 300Mhz FREQUENCY (Hz) SE5539 Open-Loop Gain vs Frequency Power Bandwidth REF 3.04V P-P 50 dB BELOW REF GAIN (dB) 40 30 20 VCC = +6V RL = 126Ω –2 –4 –6 –8 GAIN (–7) –10 10 RL = 150Ω –12 0o 1 MHz 10MHz 100MHz 1MHz 300Mhz 10MHz FREQUENCY (Hz) SE5539 Open-Loop Phase vs Frequency 300MHz Gain Bandwidth Product vs Frequency 0° 22 45° 20 AV = X10 VCC = ±6V RL = 150Ω GAIN (dB) PHASE (DEG) 100MHz FREQUENCY (Hz) 90° 135° 180° 1MHz VCC = ±6V 18 AV = X7.5 3dB BANDWIDTH 16 3dB BANDWIDTH 14 RL = 126Ω 10MHz 100MHz 12 1MHz 300MHz FREQUENCY (Hz) 10MHz 100MHz 300MHz FREQUENCY (Hz) NOTE: Indicates typical distribution –55°C ≤ Tamb ≤ 125°C SL00574 Figure 5. Typical Performance Curves 2002 Jan 25 7 Philips Semiconductors Product data High frequency operational amplifier NE/SE5539 Bread-boarding is not recommended. A double-sided copper-clad printed circuit board will result in more favorable system operation. An example utilizing a 28 dB non-inverting amp is shown in Figure 6. CIRCUIT LAYOUT CONSIDERATIONS As may be expected for an ultra-high frequency, wide-gain bandwidth amplifier, the physical circuit is extremely critical. RF OPTIONAL OFFSET ADJ. +V 1nF +V –V R5 R4 RFC 1nF –14 R1 R3 75 NE5539 10 8 7 3 75 VOUT 470 +1 75Ω TERM R6 VIN 1nF R2 RFC 75 1nF —V R1 = 75Ω 5% CARBON R2 = 75Ω 5% CARBON R3 = 75Ω 5% CARBON R4 = 36K 5% CARBON R5 = 20k TRIMPOT (CERMET) RFC 3T # 26 BUSS WIRE ON RF = 1.5k (28dB GAIN) R6 = 470Ω 5% CARBON FERROXCUBE VK 200 09/3B CORE BYPASS CAPACITORS 1nF CERAMIC (MEPCO OR EQUIV.) Top Plane Copper1 (Component Side) Component Side (Component Layout) —V X R5 X R1 R4 R2 Bottom Plane Copper1 +V (1) RFC VIN X X X X CC RFC X X X X R 6 X X RF R5 SL00575 Figure 6. 28dB Non-Inverting Amp Sample PC Layout 2002 Jan 25 8 Philips Semiconductors Product data High frequency operational amplifier NE/SE5539 NE5539 COLOR VIDEO AMPLIFIER The NE5539 wideband operational amplifier is easily adapted for use as a color video amplifier. A typical circuit is shown in Figure 7 along with vector-scope1 photographs showing the amplifier differential gain and phase response to a standard five-step modulated staircase linearity signal (Figures 8, 9 and 10). As can be seen in Figure 9, the gain varies less than 0.5% from the bottom to the top of the staircase. The maximum differential phase shown in Figure 10 is approximately +0.1°. The amplifier circuit was optimized for a 75 Ω input and output termination impedance with a gain of approximately 10 (20 dB). NOTE: 1. The input signal was 200 mV and the output 2 V. VCC was ±8 V. 750 75 —V 22nF — 14 1 10 8 VIN 3 + 1 75 7 470 6dB LOSS—1 SL00578 ZO = 75Ω Figure 9. Differential Gain <0.5% 75 NOTE: Instruments used for these measurements were Tektronix 146 NTSC test signal generator, 520A NTSC vectorscope, and 1480 waveform monitor. 75 —V 22nF —V SL00576 Figure 7. NE5539 Video Amplifier SL00577 Figure 8. Input Signal 2002 Jan 25 9 Philips Semiconductors Product data High frequency operational amplifier NE/SE5539 SL00579 Figure 10. Differential Gain +0.1o +2V –8V ZIN = 500Ω 1 820 + 470 2–10pF NE5539 14 118 ZO = 50Ω 8 220 87 – 1K 2K CLEAD ≈ 1.5pF SL00580 Figure 11. Non-Inverting Follower +8V –8V 1 + 1K NE5539 2–20pF 14 50 470 118 320 8 87 – 1K 3.3pF SL00581 Figure 12. Inverting Follower 2002 Jan 25 10 Philips Semiconductors Product data High frequency operational amplifier NE/SE5539 DIP14: plastic dual in-line package; 14 leads (300 mil) 2002 Jan 25 11 SOT27-1 Philips Semiconductors Product data High frequency operational amplifier NE/SE5539 SO14: plastic small outline package; 14 leads; body width 3.9 mm 2002 Jan 25 12 SOT108-1 Philips Semiconductors Product data High frequency operational amplifier NE/SE5539 NOTES 2002 Jan 25 13 Philips Semiconductors Product data High frequency operational amplifier NE/SE5539 Data sheet status Data sheet status [1] Product status [2] Definitions Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Disclaimers Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Koninklijke Philips Electronics N.V. 2002 All rights reserved. Printed in U.S.A. Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 Date of release: 01-02 For sales offices addresses send e-mail to: [email protected]. Document order number: 2002 Jan 25 14 9397 750 09382