MMA6281QT, 2.5g - 10g Two Axis Low-g Micromachined Accelerometer

Document Number: MMA6281QT
Rev 2, 06/2007
Freescale Semiconductor
Technical Data
±2.5g - 10g Two Axis Low-g
Micromachined Accelerometer
The MMA6281QT low cost capacitive micromachined accelerometer features
signal conditioning, a 1-pole low pass filter, temperature compensation and gSelect which allows for the selection among 4 sensitivities. Zero-g offset full scale
span and filter cut-off are factory set and require no external devices. Includes a
Sleep Mode that makes it idea l for handheld battery powered electronics.
Features
•
•
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•
•
•
•
•
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MMA6281QT
MMA6281QT: XZ AXIS
ACCELEROMETER
±2.5g/3.3g/6.7g/10g
Selectable Sensitivity (2.5g/3.3g/6.7g/10g)
Low Current Consumption: 500 μA
Sleep Mode: 3 μA
Low Voltage Operation: 2.2 V – 3.6 V
6mm x 6mm x 1.45mm QFN
Fast Turn On Time
High Sensitivity (2.5 g)
Integral Signal Conditioning with Low Pass Filter
Robust Design, High Shocks Survivability
Environmentally Preferred Package
Low Cost
Bottom View
Typical Applications
16-LEAD
QFN
CASE 1622-02
MMA6281QT
– 40 to +105°C
1622-02
QFN-16, Tray
MMA6281QR2
– 40 to +105°C
1622-02
QFN-16,Tape & Reel
16 15
14
13
Sleep
Mode
g-Select1 1
12
g-Select2 2
11 N/C
VDD 3
10 N/C
VSS 4
9 N/C
5
6
7
8
N/C
Package
N/C
Case No.
N/C
Temp. Range
N/C
Device
N/C
ORDERING INFORMATION
ZOUT
Top View
N/C
•
•
•
•
•
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Portable Applications: Tilt Monitoring Anti-Theft
Vibration Monitoring and Recording: Appliance Balance, Seismic,
Smart Motors)
Pedometer: Motion Sensing
PDA: Text Scroll
Navigation and Dead Reckoning: E-Compass Tilt Compensation
Gaming: Tilt and Motion Sensing, Event Recorder
Robotics: Motion Sensing
Impact Monitoring (Shipping, Handling, Black Box Event Recorder)
XOUT
•
•
Figure 1. Pin Connections
© Freescale Semiconductor, Inc., 2005-2007. All rights reserved.
VDD
g-Select1
g-Select2
G-Cell
Sensor
Sleep Mode
Oscillator
Clock
Generator
C to V
Converter
Gain
+
Filter
Control Logic
EEPROM Trim Circuits
X-Temp
Comp
XOUT
Z-Temp
Comp
ZOUT
VSS
Figure 2. Simplified Accelerometer Functional Block Diagram
Table 1. Maximum Ratings
(Maximum ratings are the limits to which the device can be exposed without causing permanent damage.)
Rating
Symbol
Value
Unit
Maximum Acceleration (all axis)
gmax
±2000
g
Supply Voltage
VDD
–0.3 to +3.6
V
Ddrop
1.8
m
Tstg
–40 to +125
°C
Drop Test
(1)
Storage Temperature Range
1. Dropped onto concrete surface from any axis.
ELECTRO STATIC DISCHARGE (ESD)
WARNING: This device is sensitive to electrostatic
discharge.
Although the Freescale accelerometer contains internal
2000 V ESD protection circuitry, extra precaution must be
taken by the user to protect the chip from ESD. A charge of
over 2000 volts can accumulate on the human body or
associated test equipment. A charge of this magnitude can
alter the performance or cause failure of the chip. When
handling the accelerometer, proper ESD precautions should
be followed to avoid exposing the device to discharges which
may be detrimental to its performance.
MMA6281QT
2
Sensors
Freescale Semiconductor
Table 2. Operating Characteristics
Unless otherwise noted: –20°C < TA < 85°C, 2.2 V < VDD < 3.6 V, Acceleration = 0g, Loaded output(1)
Characteristic
Symbol
Min
Typ
Max
Unit
VDD
IDD
IDD
TA
2.2
—
—
–40
3.3
500
3
—
3.6
800
10
+105
V
μA
μA
°C
gFS
gFS
gFS
gFS
—
—
—
—
±2.5
±3.3
±6.7
±10.0
—
—
—
—
g
g
g
g
VOFF
1.485
1.65
1.815
V
VOFF, TA
VOFF, TA
±2.6(6)
±1.0(6)
±0.6
±0.8
±3.8(7)
±0.8(7)
mg/°C
mg/°C
S2.5g
S3.3g
S6.7g
S10g
444
333
167
111
480
360
180
120
516
387
193
129
mV/g
mV/g
mV/g
mV/g
S,TA
S,TA
±0.02(6)
±0.01(6)
±0.02
±0.00
±0.02(7)
±0.01(7)
%/°C
%/°C
f-3dB
f-3dB
—
—
350
150
—
—
Hz
Hz
nRMS
nPSD
—
—
3.0
350
—
—
mVrms
μg/ Hz
tRESPONSE
tENABLE
—
—
1.0
0.5
2.0
2.0
ms
ms
fGCELL
fGCELL
fCLK
—
—
—
6.0
3.4
11
—
—
—
kHz
kHz
kHz
VFSO
VSS+0.25
—
VDD–0.25
V
Nonlinearity, XOUT, ZOUT
NLOUT
–1.0
—
+1.0
%FSO
Cross-Axis Sensitivity(10)
VXZ
—
—
5.0
%
Operating Range(2)
Supply Voltage(3)
Supply Current
Supply Current at Sleep Mode(4)
Operating Temperature Range
Acceleration Range, X-Axis, Z-Axis
g-Select1 & 2: 00
g-Select1 & 2: 10
g-Select1 & 2: 01
g-Select1 & 2: 11
Output Signal
Zero-g (TA = 25°C, VDD = 3.3 V)(5)
Zero-g(4)
X-axis
Z-axis
Sensitivity (TA = 25°C, VDD = 3.3 V)
2.5g
3.3g
6.7g
10g
Sensitivity(4)
X-axis
Z-axis
Bandwidth Response
X
Z
Noise
RMS (0.1 Hz – 1 kHz)(4)
Power Spectral Density RMS (0.1 Hz – 1 kHz)(4)
Control Timing
Power-Up Response Time(8)
Enable Response Time(9)
Sensing Element Resonant Frequency
X
Z
Internal Sampling Frequency
Output Stage Performance
Full-Scale Output Range (IOUT = 30 µA)
1. For a loaded output, the measurements are observed after an RC filter consisting of a 1.0 kΩ resistor and a 0.1 µF capacitor on VDD-GND.
2. These limits define the range of operation for which the part will meet specification.
3. Within the supply range of 2.2 and 3.6 V, the device operates as a fully calibrated linear accelerometer. Beyond these supply limits the device
may operate as a linear device but is not guaranteed to be in calibration.
4. This value is measured with g-Select in 2.5g mode.
5. The device can measure both + and – acceleration. With no input acceleration the output is at midsupply. For positive acceleration the output
will increase above VDD/2. For negative acceleration, the output will decrease below VDD/2.
6. These values represent the 10th percentile, not the minimum.
7. These values represent the 90th percentile, not the maximum.
8. The response time between 10% of full scale VDD input voltage and 90% of the final operating output voltage.
9. The response time between 10% of full scale Sleep Mode input voltage and 90% of the final operating output voltage.
10. A measure of the device’s ability to reject an acceleration applied 90° from the true axis of sensitivity.
MMA6281QT
Sensors
Freescale Semiconductor
3
PRINCIPLE OF OPERATION
The Freescale accelerometer is a surface-micromachined
integrated-circuit accelerometer.
The device consists of two surface micromachined
capacitive sensing cells (g-cell) and a signal conditioning
ASIC contained in a single integrated circuit package. The
sensing elements are sealed hermetically at the wafer level
using a bulk micromachined cap wafer.
The g-cell is a mechanical structure formed from
semiconductor materials (postillion) using semiconductor
processes (masking and etching). It can be modeled as a set
of beams attached to a movable central mass that move
between fixed beams. The movable beams can be deflected
from their rest position by subjecting the system to an
acceleration (Figure 3).
As the beams attached to the central mass move, the
distance from them to the fixed beams on one side will
increase by the same amount that the distance to the fixed
beams on the other side decreases. The change in distance
is a measure of acceleration.
The g-cell beams form two back-to-back capacitors
(Figure 3). As the center beam moves with acceleration, the
distance between the beams changes and each capacitor's
value will change, (C = Aε/D). Where A is the area of the
beam, ε is the dielectric constant, and D is the distance
between the beams.
The ASIC uses switched capacitor techniques to measure
the g-cell capacitors and extract the acceleration data from
the difference between the two capacitors. The ASIC also
signal conditions and filters (switched capacitor) the signal,
providing a high level output voltage that is ratiometric and
proportional to acceleration.
Acceleration
SPECIAL FEATURES
g-Select
The g-Select feature allows for the selection among 4
sensitivities present in the device. Depending on the logic
input placed on pins 1 and 2, the device internal gain will be
changed allowing it to function with a 2.5g, 3.3g, 6.7g, or 10g
sensitivity (Table 3). This feature is ideal when a product has
applications requiring different sensitivities for optimum
performance. The sensitivity can be changed at anytime
during the operation of the product. The g-Select1 and gSelect2 pins can be left unconnected for applications
requiring only a 2.5g sensitivity as the device has an internal
pull-down to keep it at that sensitivity (480 mV/g).
Table 3. g-Select pin Descriptions
g-Select2
g-Select1
g-Range
Sensitivity
0
0
2.5g
480 mV/g
0
1
3.3g
360 mV/g
1
0
6.7g
180 mV/g
1
1
10g
120 mV/g
Sleep Mode
The 2 axis accelerometer provides a Sleep Mode that is
ideal for battery operated products. When Sleep Mode is
active, the device outputs are turned off, providing significant
reduction of operating current. A low input signal on pin 12
(Sleep Mode) will place the device in this mode and reduce
the current to 3 μA typ. For lower power consumption, it is
recommended to set g-Select1 and g-Select2 to 2.5g mode.
By placing a high input signal on pin 12, the device will
resume to normal mode of operation.
Filtering
The 2 axis accelerometer contains onboard single-pole
switched capacitor filters. Because the filter is realized using
switched capacitor techniques, there is no requirement for
external passive components (resistors and capacitors) to set
the cut-off frequency.
Figure 3. Simplified Transducer Physical Model
Ratiometricity
Ratiometricity simply means the output offset voltage and
sensitivity will scale linearly with applied supply voltage. That
is, as supply voltage is increased, the sensitivity and offset
increase linearly; as supply voltage decreases, offset and
sensitivity decrease linearly. This is a key feature when
interfacing to a microcontroller or an A/D converter because
it provides system level cancellation of supply induced errors
in the analog to digital conversion process.
MMA6281QT
4
Sensors
Freescale Semiconductor
BASIC CONNECTIONS
Pin Descriptions
Connection Diagram
ZOUT
PCB Layout
POWER SUPPLY
g-Select2
2
11
N/C
VDD
3
10
N/C
VSS
4
9
N/C
5
6
7
8
N/C
Sleep Mode
N/C
12
N/C
1
N/C
g-Select1
VDD
VSS
Sleep Mode
C
C
g-Select1
VRH
VDD
P0
VSS
P1
g-Select2
P2
XOUT
R
ZOUT
R
C
A/DIN
C
Microcontroller
14 13
Accelerometer
16 15
N/C
N/C
XOUT
Top View
Figure 4. Pinout Description
Table 4. Pin Descriptions
Pin No.
Pin Name
1
g-Select1
Logic input pin to select g level.
2
g-Select2
Logic input pin to select g level.
3
VDD
Power Supply Input
4
VSS
Power Supply Ground
5-7
N/C
No internal connection.
Leave unconnected.
8 - 11
N/C
Unused for factory trim.
Leave unconnected.
12
Sleep Mode
13
ZOUT
Z direction output voltage.
14
N/C
No internal connection.
Leave unconnected.
15
XOUT
16
N/C
Logic
Inputs
Logic input pin to enable product or
Sleep Mode.
No internal connection.
Leave unconnected.
g-Select1
ZOUT
13
1 kΩ
0.1 μF
2 g-Select2
VDD
MMA6281QT
3
12
Figure 6. Recommended PCB Layout for Interfacing
Accelerometer to Microcontroller
NOTES:
1. Use 0.1 µF capacitor on VDD to decouple the power
source. Do not exceed capacitor values of 2.2 or
3.3 µF. Slow dV/dt rise times on VDD may cause the
device to not power up below 0°C.To ensure
operation below 0°C ensure VDD line has the ability
to reach 2.2V in < 0.1 ms as measured on the device
at the VDD pin. If output signal does not assert itself,
then the dv/dt at the VDD pin of the device should be
measured.
2. Physical coupling distance of the accelerometer to
the microcontroller should be minimal.
3. The flag underneath the package is internally
connected to ground. It is not recommended for the
flag to be soldered down.
4. Place a ground plane beneath the accelerometer to
reduce noise, the ground plane should be attached to
all of the open ended terminals shown in Figure 6.
5. Use an RC filter with 1.0 kΩ and 0.1 µF on the
outputs of the accelerometer to minimize clock noise
(from the switched capacitor filter circuit).
6. PCB layout of power and ground should not couple
power supply noise.
VDD
7. Accelerometer and microcontroller should not be a
high current path.
0.1 μF
4
A/DIN
Description
X direction output voltage.
1
C
VSS
XOUT
Sleep Mode
Logic
Input
15
1 kΩ
0.1 μF
Figure 5. Accelerometer with Recommended
8. A/D sampling rate and any external power supply
switching frequency should be selected such that
they do not interfere with the internal accelerometer
sampling frequency (11 kHz for the sampling
frequency). This will prevent aliasing errors.
9. PCB layout should not run traces or vias under the
QFN part. This could lead to ground shorting to the
accelerometer flag.
MMA6281QT
Sensors
Freescale Semiconductor
5
DYNAMIC ACCELERATION
Top View
Top View
Side View
14
13
1
12
2
11
3
10
4
9
+X
5
6
7
-X
-Z
Bottom
15
Top
16
+Z
8
: Arrow indicates direction of mass movement.
16-Pin QFN Package
STATIC ACCELERATION
In 2.5g mode
Direction of Earth’s gravity field.*
Top View
Side View
XOUT@ 0g = 1.65 V
ZOUT @ 0g = 1.65 V
XOUT @ 0g = 1.65 V
ZOUT @ +1g = 2.13 V
XOUT @ -1g = 1.17 V
ZOUT @ 0g = 1.65 V
XOUT @ +1g = 2.13 V
ZOUT @ 0g = 1.65 V
XOUT @ 0g = 1.65 V
ZOUT @ -1g = 1.17 V
XOUT @ 0g = 1.65 V
ZOUT @ 0g = 1.65 V
* When positioned as shown, the Earth’s gravity will result in a positive 1g output.
MMA6281QT
6
Sensors
Freescale Semiconductor
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the surface mount packages must be
the correct size to ensure proper solder connection interface
between the board and the package.
With the correct footprint, the packages will self-align when
subjected to a solder reflow process. It is always
recommended to design boards with a solder mask layer to
avoid bridging and shorting between solder pads.
The flag underneath the package is internally connected to
ground. It is not recommended for the flag to be soldered
down.
Pin 1 ID
(non-metallic)
Do not solder down
flag and 4 corner
ground pads on the
package for
consumer application
Do not place any top
metal patterns or via
structures beneath
the package
Note: The die pad (flag) is not generally recommended to be
soldered down for consumer product application. All dimensions
are in mm.
Figure 7. PCB Footprint for 16-Lead QFN, 6x6 mm for
Consumer Grade Products and Applications
MMA6281QT
Sensors
Freescale Semiconductor
7
PCB DESIGN GUIDELINES
The following are the recommended guidelines to follow
for mounting QFN sensors for either automotive or consumer
applications.
1. NSMD (Non Solder Mask Defined) is shown in
Figure 8.
2. Solder mask opening = PCB land pad +0.1 mm.
3. Stencil aperture size = PCB land pad – 0.025mm, as
shown in Figure 9 with a 6 mil stencil.
4. Do not place insertion components or vias at a
distance less than 2mm from the package land area.
5. Signal trace connected to pads should be as
symmetric as possible. Put dummy traces if there is
NC pads, in order to have same length of exposed
trace for all pads. Signal traces with 0.1mm width and
6.
7.
8.
9.
min. 0.5mm length for all PCB land pad near package
are recommended as shown in Figure 8 and
Figure 9. Wider trace can be continued after the
0.5mm zone.
Use a standard pick and place process and
equipment (no hand soldering process).
It is recommended to use a cleanable solder paste
with an additional cleaning step after SMT mount
It is recommended to avoid screwing down the PCB
to fix it into an enclosure since this may cause the
PCB to bend.
PC boards should be rated for multiple reflow of leadfree conditions with 260°C maximum temperature.
\
PCB land pattern - NSMD
Package Pad
Signal trace 0.1mm width
and 0.5mm (min) length near
package. Wider trace can be
continued after these traces.
0.50 mm
0.55 mm
Cu: 0.55 x 0.50 mm sq.
Solder mask opening =
PCB land pad +0.1mm
=0.65x0.60 mm sq.
Figure 8. NSMD Solder Mask Design Guidelines
Signal trace near package: 0.1mm width and
0.5mm (min) length are recommended near
package. Wider trace can be continued after
these.
Stencil opening (black) for land pad (yellow)
= PCB landing pad -0.025mm
= 0.525mmx0,475mm
Package foot pirnt
Figure 9. Stencil Design Guidelines
MMA6281QT
8
Sensors
Freescale Semiconductor
PACKAGE DIMENSIONS
PAGE 1 OF 3
CASE 1622-02
ISSUE B
16-LEAD QFN
MMA6281QT
Sensors
Freescale Semiconductor
9
PACKAGE DIMENSIONS
PAGE 2 OF 3
CASE 1622-02
ISSUE B
16-LEAD QFN
MMA6281QT
10
Sensors
Freescale Semiconductor
PACKAGE DIMENSIONS
PAGE 3 OF 3
CASE 1622-02
ISSUE B
16-LEAD QFN
MMA6281QT
Sensors
Freescale Semiconductor
11
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MMA6281QT
Rev. 2
06/2007