Document Number: MMA6361L Rev 1, 08/2011 Freescale Semiconductor Data Sheet: Technical Data ±1.5g, ±6g Two Axis Low-g Micromachined Accelerometer MMA6361L The MMA6361L is a low power, low profile capacitive micromachined accelerometer featuring signal conditioning, a 1-pole low pass filter, temperature compensation, and g-Select which allows for the selection between two sensitivities. Zero-g offset and sensitivity are factory set and require no external devices. The MMA6361L includes a Sleep Mode that makes it ideal for handheld battery powered electronics. Features 3mm x 5mm x 1.0mm LGA-14 Package Low Current Consumption: 400 μA Sleep Mode: 3 μA Low Voltage Operation: 2.2 V – 3.6 V High Sensitivity (800 mV/g @ 1.5g) Selectable Sensitivity (±1.5g, ±6g) Fast Turn On Time (0.5 ms Enable Response Time) Signal Conditioning with Low Pass Filter Robust Design, High Shocks Survivability RoHS Compliant Environmentally Preferred Product Low Cost Bottom View 14 LEAD LGA CASE 1977-01 Typical Applications Top View –40 to +85°C 1977-01 LGA-14 Tray MMA6361LR1 –40 to +85°C 1977-01 LGA-14 7” Tape & Reel MMA6361LR2 –40 to +85°C 1977-01 LGA-14 13” Tape & Reel Sleep VSS VDD 13 MMA6361LT 12 Shipping 11 Package N/C 10 Package Drawing N/C g-Select 9 1 Temperature Range 7 N/C Part Number GND N/C 8 YOUT ORDERING INFORMATION 2 XOUT 3 N/C 14 N/C 4 3D Gaming: Tilt and Motion Sensing, Event Recorder HDD MP3 Player Laptop PC: Anti-Theft Cell Phone: Image Stability, Text Scroll, Motion Dialing, eCompass Pedometer: Motion Sensing PDA: Text Scroll Robotics: Motion Sensing 5 • • • • • • • 6 • • • • • • • • • • • • MMA6361L: XY AXIS ACCELEROMETER ±1.5g, ±6g N/C Figure 1. Pin Connections © Freescale Semiconductor, Inc., 2010, 2011. All rights reserved. VDD CLOCK GEN OSCILLATOR G-CELL SENSOR Sleep X-TEMP COMP XOUT Y-TEMP COMP YOUT GAIN + FILTER C to V CONVERTER CONTROL LOGIC NVM TRIM CIRCUITS VSS Figure 2. Simplified Accelerometer Functional Block Diagram Table 1. Maximum Ratings (Maximum ratings are the limits to which the device can be exposed without causing permanent damage.) Rating Symbol Value Unit Maximum Acceleration (all axis) gmax ±5000 g Supply Voltage VDD –0.3 to +3.6 V Ddrop 1.8 m Tstg –40 to +125 °C Drop Test (1) Storage Temperature Range 1. Dropped onto concrete surface from any axis. ELECTRO STATIC DISCHARGE (ESD) WARNING: This device is sensitive to electrostatic discharge. Although the Freescale accelerometer contains internal 2000 V ESD protection circuitry, extra precaution must be taken by the user to protect the chip from ESD. A charge of over 2000 volts can accumulate on the human body or associated test equipment. A charge of this magnitude can alter the performance or cause failure of the chip. When handling the accelerometer, proper ESD precautions should be followed to avoid exposing the device to discharges which may be detrimental to its performance. MMA6361L 2 Sensors Freescale Semiconductor Table 2. Operating Characteristics Unless otherwise noted: -40°C < TA < 85°C, 2.2 V < VDD < 3.6 V, Acceleration = 0g, Loaded output(1) Characteristic Symbol Min Typ Max Unit VDD IDD IDD TA 2.2 — — -40 3.3 400 3 — 3.6 600 10 +85 V μA μA °C gFS gFS — — ±1.5 ±6.0 — — g g VOFF VOFF, TA 1.485 -2.0 1.65 ±0.5 1.815 +2.0 V mg/°C S1.5g S6g S,TA 740 190.6 -0.0075 800 206 ±0.002 860 221.5 +0.0075 mV/g mV/g %/°C f-3dBXY ZO — — 400 32 — — Hz kΩ nPSD — 350 — μg/ Hz tRESPONSE tENABLE — — 1.0 0.5 2.0 2.0 ms ms fGCELLXY fCLK — — 6.0 11 — — kHz kHz (2) Operating Range Supply Voltage(3) Supply Current(4) Supply Current at Sleep Mode(4) Operating Temperature Range Acceleration Range, X-Axis, Y-Axis, Z-Axis g-Select: 0 g-Select: 1 Output Signal Zero-g (TA = 25°C, VDD = 3.3 V)(5), (6) Zero-g(7) Sensitivity (TA = 25°C, VDD = 3.3 V) 1.5g 6g Sensitivity(4) Bandwidth Response XY Output Impedance Noise Power Spectral Density RMS (0.1 Hz – 1 kHz)(4) Control Timing Power-Up Response Time(8) Enable Response Time(9) Sensing Element Resonant Frequency XY Internal Sampling Frequency Output Stage Performance Full-Scale Output Range (IOUT = 3 µA) Nonlinearity, XOUT, YOUT, ZOUT Cross-Axis Sensitivity(10) VFSO VSS+0.1 — VDD–0.1 V NLOUT -1.0 — +1.0 %FSO VXY, XZ, YZ -5.0 — +5.0 % 1. For a loaded output, the measurements are observed after an RC filter consisting of an internal 32 kΩ resistor and an external 3.3 nF capacitor (recommended as a minimum to filter clock noise) on the analog output for each axis and a 0.1μF capacitor on VDD - GND. The output sensor bandwidth is determined by the Capacitor added on the output. f = 1/2π * (32 x 103) * C. C = 3.3 nF corresponds to BW = 1507 HZ, which is the minimum to filter out internal clock noise. 2. These limits define the range of operation for which the part will meet specification. 3. Within the supply range of 2.2 and 3.6 V, the device operates as a fully calibrated linear accelerometer. Beyond these supply limits the device may operate as a linear device but is not guaranteed to be in calibration. 4. This value is measured with g-Select in 1.5g mode. 5. The device can measure both + and – acceleration. With no input acceleration the output is at midsupply. For positive acceleration the output will increase above VDD/2. For negative acceleration, the output will decrease below VDD/2. 6. For optimal 0g offset performance, adhere to AN3484 and AN3447 7.Product Performance will not exceed this minimum level, however measurement over time will not be equal to time zero measurements for this specific parameter. 8. The response time between 10% of full scale VDD input voltage and 90% of the final operating output voltage. 9. The response time between 10% of full scale Sleep Mode input voltage and 90% of the final operating output voltage. 10. A measure of the device’s ability to reject an acceleration applied 90° from the true axis of sensitivity. MMA6361L Sensors Freescale Semiconductor 3 PRINCIPLE OF OPERATION The Freescale accelerometer is a surface-micromachined integrated-circuit accelerometer. The device consists of a surface micromachined capacitive sensing cell (g-cell) and a signal conditioning ASIC contained in a single package. The sensing element is sealed hermetically at the wafer level using a bulk micromachined cap wafer. The g-cell is a mechanical structure formed from semiconductor materials (polysilicon) using semiconductor processes (masking and etching). It can be modeled as a set of beams attached to a movable central mass that move between fixed beams. The movable beams can be deflected from their rest position by subjecting the system to an acceleration (Figure 3). As the beams attached to the central mass move, the distance from them to the fixed beams on one side will increase by the same amount that the distance to the fixed beams on the other side decreases. The change in distance is a measure of acceleration. The g-cell beams form two back-to-back capacitors (Figure 3). As the center beam moves with acceleration, the distance between the beams changes and each capacitor's value will change, (C = Aε/D). Where A is the area of the beam, ε is the dielectric constant, and D is the distance between the beams. The ASIC uses switched capacitor techniques to measure the g-cell capacitors and extract the acceleration data from the difference between the two capacitors. The ASIC also signal conditions and filters (switched capacitor) the signal, providing a high level output voltage that is ratiometric and proportional to acceleration. Acceleration Figure 3. Simplified Transducer Physical Model SPECIAL FEATURES g-Select The g-Select feature allows for the selection between two sensitivities. Depending on the logic input placed on pin 10, the device internal gain will be changed allowing it to function with a 1.5g or 6g sensitivity (Table 3). This feature is ideal when a product has applications requiring two different sensitivities for optimum performance. The sensitivity can be changed at anytime during the operation of the product. The g-Select pin can be left unconnected for applications requiring only a 1.5g sensitivity as the device has an internal pull-down to keep it at that sensitivity (800 mV/g). Table 3. g-Select Pin Description g-Select g-Range Sensitivity 0 1.5g 800 mV/g 1 6g 206 mV/g Sleep Mode The 2 axis accelerometer provides a Sleep Mode that is ideal for battery operated products. When Sleep Mode is active, the device outputs are turned off, providing significant reduction of operating current. A low input signal on pin 7 (Sleep Mode) will place the device in this mode and reduce the current to 3 μA typ. For lower power consumption, it is recommended to set g-Select to 1.5g mode. By placing a high input signal on pin 7, the device will resume to normal mode of operation. Filtering The 2 axis accelerometer contains an onboard single-pole switched capacitor filter. Because the filter is realized using switched capacitor techniques, there is no requirement for external passive components (resistors and capacitors) to set the cut-off frequency. Ratiometricity Ratiometricity simply means the output offset voltage and sensitivity will scale linearly with applied supply voltage. That is, as supply voltage is increased, the sensitivity and offset increase linearly; as supply voltage decreases, offset and sensitivity decrease linearly. This is a key feature when interfacing to a microcontroller or an A/D converter because it provides system level cancellation of supply induced errors in the analog to digital conversion process. MMA6361L 4 Sensors Freescale Semiconductor BASIC CONNECTIONS Pin Descriptions PCB Layout Top View POWER SUPPLY N/C N/C Figure 4. Pinout Description C VRH P0 g-Select P1 GND C C VDD VSS C A/DIN A/DIN Description 1 N/C 2 XOUT X direction output voltage. 3 YOUT Y direction output voltage, 4 N/C Unused for factory trim. Leave unconnected. 5 VSS Power Supply Ground. 6 VDD Power Supply Input. 7 Sleep 8 NC No internal connection. Leave unconnected. 9 N/C No internal connection. Leave unconnected. 10 g-Select 11 N/C Unused for factory trim. Leave unconnected. 12 N/C Unused for factory trim. Leave unconnected. 13 GND Connect to Ground. 14 N/C Unused for factory trim. Leave unconnected. No internal connection. Leave unconnected. Logic input pin to enable product or Sleep Mode Logic input pin to select g level 10 13 VDD g-Select GND XOUT 6 5 7 2 VDD YOUT VSS NOTES: 1. Use 0.1 µF capacitor on VDD to decouple the power source. 2. Physical coupling distance of the accelerometer to the microcontroller should be minimal. 3. Place a ground plane beneath the accelerometer to reduce noise, the ground plane should be attached to all of the open ended terminals shown in Figure 6. 4. Use a 3.3 nF capacitor on the outputs of the accelerometer to minimize clock noise (from the switched capacitor filter circuit). 5. PCB layout of power and ground should not couple power supply noise. 7. A/D sampling rate and any external power supply switching frequency should be selected such that they do not interfere with the internal accelerometer sampling frequency (11 kHz for the sampling frequency). This will prevent aliasing errors. 3.3 nF 0.1 μF Figure 6. Recommended PCB Layout for Interfacing Accelerometer to Microcontroller 6. Accelerometer and microcontroller should not be a high current path. MMA6361L Logic Input C Sleep YOUT Table 4. Pin Descriptions Logic Input VSS XOUT Sleep Pin No. Pin Name VDD Microcontroller g-Select Accelerometer 13 12 11 10 1 2 3 N/C 7 VDD N/C 9 VSS GND 8 N/C 4 YOUT 5 XOUT 6 N/C 14 N/C 3 8. 10 MΩ or higher is recommended on XOUT, YOUT and ZOUT to prevent loss due to the voltage divider relationship between the internal 32 kΩ resistor and the measurement input impedance. 3.3 nF Sleep Figure 5. Accelerometer with Recommended Connection Diagram MMA6361L Sensors Freescale Semiconductor 5 DYNAMIC ACCELERATION Top View +Y 6 -X 5 4 3 2 1 7 +X 14 8 9 10 11 12 13 -Y 14-Pin LGA Package : Arrow indicates direction of package movement. STATIC ACCELERATION Direction of Earth's gravity field.* Top View 6 5 4 3 2 1 7 14 X 13 Y @ +1g = 2.45 V 5 Z @ 0g = 1.65 V OUT OUT 12 1 @ 0g = 1.65 V 6 OUT 4 10 3 Z 9 2 8 7 @ 0g = 1.65 V OUT OUT @ 0g = 1.65 V @ +1g = 2.45 V Bottom 1 @ 0g = 1.65 V Z OUT 13 @ +1g = 2.45 V Y OUT @ 0g = 1.65 V 14 OUT OUT Y 13 X Bottom X 12 11 2 Side View Top 13 11 3 12 10 4 11 9 5 10 8 6 9 7 14 8 12 11 10 9 8 X @ -1g = 0.85 V Y @ 0g = 1.65 V Z @ 0g = 1.65 V OUT 14 7 OUT OUT Top X OUT Y @ 0g = 1.65 V Z @ -1g =0.85 V OUT OUT 1 2 3 X OUT 4 5 6 @ 0g = 1.65 V Y @ -1g = 0.85 V Z @ 0g = 1.65 V OUT OUT @ 0g = 1.65 V * When positioned as shown, the Earth’s gravity will result in a positive 1g output. MMA6361L 6 Sensors Freescale Semiconductor X-TCO mg/degC LSL -2 X-TCS %/degC Target -1 0 USL 1 2 Y-TCO mg/degC LSL -2 0 -0.01 Target -0.005 0 USL .005 .01 Y-TCS %/degC Target -1 LSL USL 1 2 LSL -0.01 Target -0.005 0 USL .005 .01 Figure 7. MMA6361L Temperature Coefficient of Offset (TCO) and Temperature Coefficient of Sensitivity (TCS) Distribution Charts MMA6361L Sensors Freescale Semiconductor 7 MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS PCB Mounting Recommendations MEMS based sensors are sensitive to Printed Circuit Board (PCB) reflow processes. For optimal zero-g offset after PCB mounting, care must be taken to PCB layout and reflow conditions. Reference application note AN3484 for best practices to minimize the zero-g offset shift after PCB mounting. Surface mount board layout is a critical portion of the total design. The footprint for the surface mount packages must be the correct size to ensure proper solder connection interface between the board and the package. With the correct footprint, the packages will self-align when subjected to a solder reflow process. It is always recommended to design boards with a solder mask layer to avoid bridging and shorting between solder pads. 1 13 10x0.8 6x2 6 8 14x0.6 12x1 14x0.9 MMA6361L 8 Sensors Freescale Semiconductor PACKAGE DIMENSIONS CASE 1977-01 ISSUE A 14-LEAD LGA MMA6361L Sensors Freescale Semiconductor 9 PACKAGE DIMENSIONS CASE 1977-01 ISSUE A 14-LEAD LGA MMA6361L 10 Sensors Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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