CY62138EV30 MoBL 2-Mbit (256 K × 8) MoBL Static RAM Datasheet.pdf

CY62138EV30 MoBL®
2-Mbit (256 K × 8) Static RAM
2-Mbit (256 K × 8) Static RAM
Features
Functional Description
■
Very high speed: 45 ns
❐ Wide voltage range: 2.20 V to 3.60 V
The CY62138EV30 is a high performance CMOS static RAM
organized as 256K words by eight bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL) in portable
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption. The device can be put into standby mode reducing
power consumption when deselected (CE HIGH).
■
Pin compatible with CY62138CV30
■
Ultra low standby power
❐ Typical standby current: 1 A
❐ Maximum standby current: 7 A
■
Ultra low active power
❐ Typical active current: 2 mA at f = 1 MHz
■
Easy memory expansion with CE and OE features
■
Automatic power down when deselected
■
Complementary metal oxide semiconductor (CMOS) for
optimum speed and power
■
Offered in Pb-free 36-ball ball grid array (BGA) package
Writing to the device is accomplished by taking Chip Enable (CE)
and Write Enable (WE) inputs LOW. Data on the eight I/O pins
(I/O0 through I/O7) is then written into the location specified on
the address pins (A0 through A18).
Reading from the device is accomplished by taking Chip Enable
(CE) and Output Enable (OE) LOW while forcing Write Enable
(WE) HIGH. Under these conditions, the contents of the memory
location specified by the address pins appear on the I/O pins.
The eight input and output pins (I/O0 through I/O7) are placed in
a high impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW and WE LOW).
For a complete list of related documentation, click here.
Logic Block Diagram
I/O0
Data in Drivers
I/O1
256K x 8
ARRAY
I/O2
SENSE AMPS
ROW DECODER
A0
A1
A2
A3
A4
A5
A
A6
A87
A
A109
A11
I/O3
I/O4
I/O5
COLUMN
DECODER
CE
I/O6
POWER
DOWN
I/O7
A12
A13
A14
A15
A16
A17
WE
OE
Cypress Semiconductor Corporation
Document Number: 38-05577 Rev. *H
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised November 20, 2015
CY62138EV30 MoBL®
Contents
Pin Configuration ............................................................. 3
Product Portfolio .............................................................. 3
Maximum Ratings ............................................................. 4
Operating Range ............................................................... 4
Electrical Characteristics ................................................. 4
Capacitance ...................................................................... 5
Thermal Resistance .......................................................... 5
AC Test Loads and Waveforms ....................................... 5
Data Retention Characteristics ....................................... 6
Data Retention Waveform ................................................ 6
Switching Characteristics ................................................ 7
Switching Waveforms ...................................................... 8
Truth Table ...................................................................... 11
Document Number: 38-05577 Rev. *H
Ordering Information ...................................................... 12
Ordering Code Definitions ......................................... 12
Package Diagram ............................................................ 13
Acronyms ........................................................................ 14
Document Conventions ................................................. 14
Units of Measure ....................................................... 14
Document History Page ................................................. 15
Sales, Solutions, and Legal Information ...................... 17
Worldwide Sales and Design Support ....................... 17
Products .................................................................... 17
PSoC® Solutions ...................................................... 17
Cypress Developer Community ................................. 17
Technical Support ..................................................... 17
Page 2 of 17
CY62138EV30 MoBL®
Pin Configuration
Figure 1. 36-ball FBGA pinout (Top View) [1]
Top View
A0
A1
NC
A3
A6
A8
A
I/O4
A2
WE
A4
A7
I/O0
B
NC
A5
I/O1
C
VSS
Vcc
D
VCC
Vss
E
I/O2
F
I/O5
I/O6
NC
A17
I/O7
OE
CE
A16
A15
I/O3
G
A9
A10
A11
A12
A13
A14
H
Product Portfolio
Power Dissipation
VCC Range (V)
Product
CY62138EV30LL
Operating ICC (mA)
Speed
(ns)
Min
Typ [2]
Max
2.2
3.0
3.6
45
f = 1 MHz
Standby ISB2 (A)
f = fmax
Typ [2]
Max
Typ [2]
Max
Typ [2]
Max
2
2.5
15
20
1
7
Notes
1. NC pins are not connected on the die.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA = 25 °C.
Document Number: 38-05577 Rev. *H
Page 3 of 17
CY62138EV30 MoBL®
DC input voltage [3, 4] ................. –0.3 V to VCC(MAX) + 0.3 V
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature
with power applied ..................................... 55 °C to +125 °C
Supply voltage
to ground potential ...................... –0.3 V to VCC(MAX) + 0.3 V
DC voltage applied to outputs
in High Z state [3, 4] ..................... –0.3 V to VCC(MAX) + 0.3 V
Output current into outputs (LOW) ............................. 20 mA
Static discharge voltage
(per MIL-STD-883, Method 3015) .......................... > 2001 V
Latch-up current .................................................... > 200 mA
Operating Range
Product
CY62138EV30LL
Range
Ambient
Temperature
VCC[5]
Industrial –40 °C to +85 °C 2.2 V to 3.6 V
Electrical Characteristics
Over the Operating Range
Parameter
Description
Output HIGH voltage
VOH
Output LOW voltage
VOL
Input HIGH voltage
VIH
Input LOW voltage
VIL
Test Conditions
CY62138EV30-45
Min
Typ [6]
Max
Unit
IOH = –0.1 mA
VCC = 2.20 V
2.0
–
–
V
IOH = –1.0 mA
VCC = 2.70 V
2.4
–
–
V
IOL = 0.1 mA
VCC = 2.20 V
–
–
0.4
V
IOL = 2.1 mA
VCC = 2.70 V
–
–
0.4
V
VCC = 2.2 V to 2.7 V
1.8
–
VCC + 0.3
V
VCC= 2.7 V to 3.6 V
2.2
–
VCC + 0.3
V
VCC = 2.2 V to 2.7 V
–0.3
–
0.6
V
VCC= 2.7 V to 3.6 V
–0.3
–
0.8
V
IIX
Input leakage current
GND < VI < VCC
–1
–
+1
A
IOZ
Output leakage current
GND < VO < VCC, Output disabled
–1
–
+1
A
ICC
VCC Operating supply current
f = fmax = 1/tRC
–
15
20
mA
–
2
2.5
mA
–
1
7
A
–
1
7
A
f = 1 MHz
ISB1[7]
Automatic CE power down
current – CMOS inputs
VCC = VCCmax
IOUT = 0 mA
CMOS levels
CE > VCC –0.2 V,
VIN > VCC – 0.2 V, VIN < 0.2 V,
f = fmax (Address and data only),
f = 0 (OE, and WE), VCC = 3.60 V
ISB2
[7]
Automatic CE power down
current – CMOS inputs
CE > VCC – 0.2 V,
VIN > VCC – 0.2 V or VIN < 0.2 V,
f = 0, VCC = 3.60 V
Notes
3. VIL(min.) = –2.0 V for pulse durations less than 20 ns.
4. VIH(max) = VCC + 0.75 V for pulse durations less than 20 ns.
5. Full device AC operation assumes a 100 s ramp time from 0 to VCC(min.) and 200 s wait time after VCC stabilization.
6. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA = 25 °C.
7. Chip enable (CE) must be tied to CMOS levels to meet the ISB1 / ISB2 / ICCDR specification. Other inputs can be left floating.
Document Number: 38-05577 Rev. *H
Page 4 of 17
CY62138EV30 MoBL®
Capacitance
Parameter [8]
Description
CIN
Input capacitance
COUT
Output capacitance
Test Conditions
Max
Unit
10
pF
10
pF
Test Conditions
36-ball BGA
Unit
Still air, soldered on a 3 × 4.5 inch, four-layer printed circuit
board
72
C/W
8.86
C/W
TA = 25 °C, f = 1 MHz, VCC = VCC(typ.)
Thermal Resistance
Parameter [8]
Description
JA
Thermal resistance
(junction to ambient)
JC
Thermal resistance
(junction to case)
AC Test Loads and Waveforms
Figure 2. AC Test Loads and Waveforms
R1
VCC
ALL INPUT PULSES
OUTPUT
VCC
30 pF
INCLUDING
JIG AND
SCOPE
R2
GND
10%
90%
90%
10%
Fall time: 1 V/ns
Rise Time: 1 V/ns
Equivalent to: THÉVENIN EQUIVALENT
RTH
OUTPUT
VTH
Parameters
2.50 V
3.0 V
Unit
R1
16667
1103

R2
15385
1554

RTH
8000
645

VTH
1.20
1.75
V
Note
8. Tested initially and after any design or process changes that may affect these parameters.
Document Number: 38-05577 Rev. *H
Page 5 of 17
CY62138EV30 MoBL®
Data Retention Characteristics
Over the Operating Range
Parameter
VDR
ICCDR
Description
Conditions
VCC for data retention
[10]
VCC = 1 V, CE > VCC 0.2 V,
VIN > VCC 0.2 V or VIN < 0.2 V
Data retention current
Min
Typ [9]
Max
Unit
1
–
–
V
–
0.8
3
A
tCDR[11]
Chip deselect to data retention
time
0
–
–
ns
tR[12]
Operation recovery time
45
–
–
ns
Data Retention Waveform
Figure 3. Data Retention Waveform
DATA RETENTION MODE
VCC
VCC (min.)
tCDR
VDR > 1.0 V
VCC (min.)
tR
CE
Notes
9. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C.
10. Chip enable (CE) must be tied to CMOS levels to meet the ISB1 / ISB2 / ICCDR specification. Other inputs can be left floating.
11. Tested initially and after any design or process changes that may affect these parameters.
12. Full device AC operation requires linear VCC ramp from VDR to VCC(min.) > 100 s or stable at VCC(min.)  100 s.
Document Number: 38-05577 Rev. *H
Page 6 of 17
CY62138EV30 MoBL®
Switching Characteristics
Over the Operating Range
Parameter [13, 14]
Description
45 ns
Unit
Min
Max
45
–
ns
Read Cycle
tRC
Read cycle time
tAA
Address to data valid
–
45
ns
tOHA
Data hold from address change
10
–
ns
tACE
CE LOW to data valid
–
45
ns
tDOE
OE LOW to data valid
–
22
ns
[15]
5
–
ns
–
18
ns
10
–
ns
–
18
ns
tLZOE
OE LOW to Low Z
tHZOE
OE HIGH to High Z [15, 16]
tLZCE
CE LOW to Low Z
[15]
[15, 16]
tHZCE
CE HIGH to High Z
tPU
CE LOW to power-up
0
–
ns
tPD
CE HIGH to power-up
–
45
ns
Write Cycle
[17, 18]
tWC
Write cycle time
45
–
ns
tSCE
CE LOW to write end
35
–
ns
tAW
Address setup to write end
35
–
ns
tHA
Address hold from write end
0
–
ns
tSA
Address setup to write start
0
–
ns
tPWE
WE pulse width
35
–
ns
tSD
Data setup to write end
25
–
ns
tHD
Data hold from write end
0
–
ns
–
18
ns
10
–
ns
tHZWE
tLZWE
WE LOW to High Z
[15, 16]
WE HIGH to Low Z
[15]
Notes
13. In an earlier revision of this device, under a specific application condition, READ and WRITE operations were limited to switching of the chip enable signal as described
in the Application Note AN66311. However, the issue has been fixed and in production now, and hence, this Application Notes is no longer applicable. It is available
for download on our website as it contains information on the date code of the parts, beyond which the fix has been in production.
14. Test conditions for all parameters other than three-state parameters assume signal transition time of 3 ns or less (1 V/ns), timing reference levels of VCC(typ)/2, input
pulse levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in Figure 2 on page 5.
15. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
16. tHZOE, tHZCE, and tHZWE transitions are measured when the output enter a high impedance state.
17. The internal write time of the memory is defined by the overlap of WE, CE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can terminate
a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates the write.
18. The minimum write cycle pulse width for Write Cycle No. 3 (WE Controlled, OE LOW) should be equal to the sum of tSD and tHZWE.
Document Number: 38-05577 Rev. *H
Page 7 of 17
CY62138EV30 MoBL®
Switching Waveforms
Figure 4. Read Cycle No. 1: Address Transition Controlled [19, 20]
tRC
ADDRESS
tOHA
DATA OUT
tAA
PREVIOUS DATA VALID
DATA VALID
Figure 5. Read Cycle No. 2: OE Controlled [21, 22]
ADDRESS
tRC
CE
tACE
OE
tHZOE
tHZCE
tDOE
DATA OUT
tLZOE
HIGH IMPEDANCE
tLZCE
VCC
SUPPLY
CURRENT
HIGH
IMPEDANCE
DATA VALID
tPD
tPU
50%
50%
ICC
ISB
Notes
19. Device is continuously selected. OE, CE = VIL.
20. WE is HIGH for read cycle.
21. WE is HIGH for read cycle.
22. Address valid prior to or coincident with CE transition LOW.
Document Number: 38-05577 Rev. *H
Page 8 of 17
CY62138EV30 MoBL®
Switching Waveforms (continued)
Figure 6. Write Cycle No. 1: WE Controlled [23, 24]
tWC
ADDRESS
tSCE
CE
tAW
tHA
tSA
WE
tPWE
OE
tSD
DATA I/O
NOTE 25
tHD
DATAIN VALID
tHZOE
Figure 7. Write Cycle No. 2: CE Controlled [23, 24]
tWC
ADDRESS
tSCE
CE
tHA
tSA
tAW
tPWE
WE
OE
tSD
DATA I/O
tHD
DATAIN VALID
Notes
23. Data I/O is high impedance if OE = VIH.
24. If CE goes HIGH simultaneously with WE HIGH, the output remains in high impedance state.
25. During this period, the I/Os are in output state and input signals should not be applied.
Document Number: 38-05577 Rev. *H
Page 9 of 17
CY62138EV30 MoBL®
Switching Waveforms (continued)
Figure 8. Write Cycle No. 3: WE Controlled, OE LOW [26, 27]
tWC
ADDRESS
tSCE
CE
tAW
tSA
tHA
tPWE
WE
tSD
DATA I/O
tHD
DATAIN VALID
NOTE 28
tHZWE
tLZWE
Notes
26. If CE goes HIGH simultaneously with WE HIGH, the output remains in high impedance state.
27. The minimum write cycle pulse width should be equal to the sum of tSD and tHZWE.
28. During this period, the I/Os are in output state and input signals should not be applied.
Document Number: 38-05577 Rev. *H
Page 10 of 17
CY62138EV30 MoBL®
Truth Table
CE
H
WE
OE
[29]
Inputs/Outputs
Mode
Power
X
X
High Z
Deselect/power-down
Standby (ISB)
L
H
L
Data out (I/O0–I/O7)
Read
Active (ICC)
L
H
H
High Z
Output disabled
Active (ICC)
L
L
X
Data in (I/O0–I/O7)
Write
Active (ICC)
Note
29. Chip enable (CE) must be tied to CMOS levels to meet the ISB1 / ISB2 / ICCDR specification. Other inputs can be left floating.
Document Number: 38-05577 Rev. *H
Page 11 of 17
CY62138EV30 MoBL®
Ordering Information
Speed
(ns)
45
Ordering Code
CY62138EV30LL-45BVXI
Package
Diagram
Package Type
51-85149 36-ball VFBGA (6 mm × 8 mm × 1 mm) (Pb-free)
Operating
Range
Industrial
Ordering Code Definitions
CY 621 3
8
E V30 LL - 45 BV X
I
Temperature Grade: I = Industrial
Pb-free
Package Type:
BV = 36-ball VFBGA
Speed Grade: 45 ns
Low Power
Voltage Range: 3 V typical
Process Technology: 90 nm
Bus width = × 8
Density = 2-Mbit
Family Code: MoBL SRAM family
Company ID: CY = Cypress
Document Number: 38-05577 Rev. *H
Page 12 of 17
CY62138EV30 MoBL®
Package Diagram
Figure 9. 36-ball VFBGA (6 × 8 × 1.0 mm) BV36A Package Outline, 51-85149
51-85149 *F
Document Number: 38-05577 Rev. *H
Page 13 of 17
CY62138EV30 MoBL®
Acronyms
Acronym
Document Conventions
Description
Units of Measure
BGA
ball gird array
CE
chip enable
°C
degree Celsius
CMOS
complementary metal oxide semiconductor
MHz
megahertz
FBGA
fine-pitch ball gird array
A
microampere
I/O
input/output
s
microsecond
OE
output enable
mA
milliampere
SRAM
static random access memory
mm
millimeter
VFBGA
very fine ball gird array
ns
nanosecond
WE
write enable
pF
picofarad

ohm
V
volt
W
watt
Document Number: 38-05577 Rev. *H
Symbol
Unit of Measure
Page 14 of 17
CY62138EV30 MoBL®
Document History Page
Document Title: CY62138EV30 MoBL®, 2-Mbit (256 K × 8) Static RAM
Document Number: 38-05577
Rev.
ECN No.
Orig. of
Change
Submission
Date
**
237432
AJU
See ECN
New data sheet.
*A
427817
NXR
See ECN
Removed 35 ns Speed Bin
Removed “L” version
Removed 32-pin TSOPII package from product Offering.
Changed ball C3 from DNU to NC.
Removed the redundant footnote on DNU.
Moved Product Portfolio from Page # 3 to Page #2.
Changed ICC (Max) value from 2 mA to 2.5 mA and ICC (Typ) value from
1.5 mA to 2 mA at f = 1 MHz
Changed ICC (Typ) value from 12 mA to 15 mA at f = fmax=1/tRC
Changed ISB1 and ISB2 Typ. values from 0.7 A to 1 A and Max. values from
2.5 A to 7 A.
Changed VCC stabilization time in footnote #7 from 100 s to 200 s
Changed the AC test load capacitance from 50pF to 30pF on Page# 4
Changed VDR from 1.5V to 1V on Page# 4.
Changed ICCDR from 1 A to 3 A in the Data Retention Characteristics table
on Page # 4.
Corrected tR in Data Retention Characteristics from 100 s to tRC ns
Changed tOHA, tLZCE, tLZWE from 6 ns to 10 ns
Changed tHZOE, tHZCE, tHZWE from 15 ns to 18 ns
Changed tLZOE from 3 ns to 5 ns
Changed tSCE and tAW from 40 ns to 35 ns
Changed tSD from 20 ns to 25 ns
Changed tPWE from 25 ns to 35 ns
Updated the Ordering Information table and replaced Package Name column
with Package Diagram.
*B
2604685
VKN /
PYRS
11/12/08
Updated Electrical Characteristics:
Added Note 7 and referred the same note in ISB2 parameter.
Updated Data Retention Characteristics:
Added Note 10 and referred the same note in ICCDR parameter.
*C
3143896
RAME
01/17/2011
Converted all tablenotes to Footnote.
Added Ordering Code Definitions.
Updated Package Diagram:
spec 51-85149 – Changed revision from *C to *D.
Added Acronyms and Units of Measure.
Updated to new template.
*D
3284728
AJU
06/16/2011
Updated Functional Description:
Removed the Note “For best practice recommendations, refer to the Cypress
application note “SRAM System Design Guidelines” on
http://www.cypress.com website.” and its reference.
Updated to new template.
*E
3806123
TAVA
11/08/2012
Updated Data Retention Waveform (Updated Figure 3 (Changed “VDR > 1.5 V”
to “VDR > 1.0 V”)).
Updated Package Diagram (spec 51-85149 (Changed revision from *D to *E)).
*F
4099016
VINI
08/19/2013
Updated Switching Characteristics:
Added Note 13 and referred the same note in “Parameter” column.
Updated to new template.
Completing Sunset Review.
*G
4576475
VINI
11/19/2014
Updated Functional Description:
Added “For a complete list of related documentation, click here.” at the end.
Document Number: 38-05577 Rev. *H
Description of Change
Page 15 of 17
CY62138EV30 MoBL®
Document History Page (continued)
Document Title: CY62138EV30 MoBL®, 2-Mbit (256 K × 8) Static RAM
Document Number: 38-05577
Rev.
ECN No.
Orig. of
Change
Submission
Date
*H
5022355
VINI
11/20/2015
Document Number: 38-05577 Rev. *H
Description of Change
Updated Document Title to read as
“CY62138EV30 MoBL®, 2-Mbit (256 K × 8) Static RAM”.
Updated Switching Characteristics:
Added Note 18 and referred the same note in “Write Cycle”.
Updated Switching Waveforms:
Added Note 27 and referred the same note in Figure 8.
Updated Package Diagram:
spec 51-85149 – Changed revision from *E to *F.
Updated to new template.
Completing Sunset Review.
Page 16 of 17
CY62138EV30 MoBL®
Sales, Solutions, and Legal Information
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closest to you, visit us at Cypress Locations.
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© Cypress Semiconductor Corporation, 2004-2015. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
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and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
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Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 38-05577 Rev. *H
Revised November 20, 2015
All products and company names mentioned in this document may be the trademarks of their respective holders.
Page 17 of 17