ATMEL ATR7035

Features
•
•
•
•
•
•
Frequency Range 5 GHz to 6 GHz
POUT Maximum 28 dBm
Gain Typically 19 dB
VCC 3.0 V to 3.9 V
Package: QFN16
Current Consumption in Power Down Mode Typically ≤15 µA
Benefits
• Biasing Control Extends Battery Life Time
• Simple Input and Output Matching
• One Single Supply Voltage Required
5.8-GHz WDCT
Power Amplifier
Electrostatic sensitive device.
Observe precautions for handling.
ATR7035
Summary
Description
Process
The 5-GHz power amplifier is designed using Atmel’s Silicon-Germanium (SiGe) process and provides excellent noise performance as well as good power-added
efficiency.
Preliminary
Circuitry
The PA consists of a 2-stage amplifier with a maximum output power of 28 dBm. The
output stages were realized using an open-collector structure. The IC features 50-Ω
input matching. Power-up/down and output level are controlled at bias control pin 6
(VCTL).
Figure 1. Block Diagram
VCC1
15
VCC2
13
ATR7035
RFOUT
11
RFIN
3
Matching
RFOUT
10
Bias control
6
VCTL
16
VCC_CTL
Rev. 4577DS–DECT–11/04
Note: This is a summary document. A complete document
is available under NDA. For more information, please contact your local Atmel sales office.
Ordering Information
Extended Type Number
Package
Remarks
ATR7035-PES
QFN16
Tube, MOQ 750
ATR7035-PEQ
QFN16
Taped and reeled, MOQ 6000
Package Information
2
ATR7035 [Preliminary]
4577DS–DECT–11/04
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4577DS–DECT–11/04