HYNIX H5GQ1H24AFR-T2L

H5GQ1H24AFR
1Gb (32Mx32) GDDR5 SGRAM
H5GQ1H24AFR
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
1
H5GQ1H24AFR
Revision History
Revision No.
History
Draft Date
Remark
0.1
Defined target spec.
Dec. 2008
Preliminary
0.2
Updated tRTPS / tRTW / tFAW / t32AW / Thermal Characteristics
Mar. 2009
Preliminary
0.3
Updated tCKE / Pin Cap / CRCWL / CRCRL/ IDD / PLL Value
April. 2009
Preliminary
0.4
Updated tRRDL / Revision ID/ Density ID
Removed tFLK / tSTDBYLK
May. 2009
Preliminary
0.5
Updated tCKE / tCKSRE / tCKSRX (@ 6Gbps only)
May. 2009
Preliminary
0.6
Updated
Updated
Updated
Updated
Updated
Updated
July. 2009
Preliminary
0.7
VREFD Options Figure31 change
Sep. 2009
Preliminary
1.0
Revision 1.0 Release
Nov. 2009
Rev. 1.0/Nov. 2009
CRCWL / VREFD Selection Coding
Auto VREFD Training
tCKE & tPD
Leakage Current
x16 Mode IDD Value & 1.35V Timing Parameters
Ordering Information
2
H5GQ1H24AFR
TABLE OF CONTENTS
FEATURES........................................................................................................................................................5
FEATURES..............................................................................................................................................5
FUNCTIONAL DESCRIPTION....................................................................................................................5
DEFINITION OF SINGLE STATE TERMINOLOGY....................................................................................................7
CLOCKING..........................................................................................................................................................8
INITIALIZATION................................................................................................................................................10
POWER UP SEQUENCE...........................................................................................................................10
INITIALIZATION WITH STABLE POWER..................................................................................................11
VENDOR ID...........................................................................................................................................13
ADDRESS.........................................................................................................................................................15
ADDRESSING.........................................................................................................................................15
ADDRESS BUS INVERSION(ABI)..............................................................................................................16
BAND GROUP........................................................................................................................................18
TRAINING........................................................................................................................................................21
INTERFACE TRAINING SEQUENCE..........................................................................................................21
ADDRESS TRAINING..............................................................................................................................22
WCK2CK TRAINING...............................................................................................................................25
READ TRAINING...................................................................................................................................32
WRITE TRAINING.................................................................................................................................38
MODE REGISTER..............................................................................................................................................41
Mode REGISTER 0(MR0).......................................................................................................................42
Mode REGISTER 1(MR1).......................................................................................................................45
Mode REGISTER 2(MR2).......................................................................................................................48
Mode REGISTER 3(MR3).......................................................................................................................50
Mode REGISTER 4(MR4).......................................................................................................................52
Mode REGISTER 5(MR5).......................................................................................................................55
Mode REGISTER 6(MR6).......................................................................................................................57
Mode REGISTER 7(MR7).......................................................................................................................60
Mode REGISTER 15(MR15)....................................................................................................................62
OPERATION......................................................................................................................................................63
COMMAND.............................................................................................................................................63
DESELECT.............................................................................................................................................65
NO OPERATION.....................................................................................................................................65
MODE REGISTER SET.............................................................................................................................65
ACTIVATION..........................................................................................................................................66
BANK RESTRITIONS...............................................................................................................................68
WRITE (WOM).......................................................................................................................................70
WRITE DATA MAS(DM)...........................................................................................................................89
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H5GQ1H24AFR
READ....................................................................................................................................................86
DQ PREAMBLE .....................................................................................................................................95
READ AND WRITE DATA BUS INVERSION (DBI).......................................................................................97
ERROR DETECTION CODE.....................................................................................................................99
PRECHARGE........................................................................................................................................103
AUTO PRECHARGE...............................................................................................................................104
REFRESH.............................................................................................................................................104
SELF REFRESH....................................................................................................................................106
POWER-DOWN....................................................................................................................................109
COMMAND TRUTH TABLE.....................................................................................................................110
RDQS MODE........................................................................................................................................114
CLOCK FREQUENCY CHANGE SEQUENCE..............................................................................................116
DYNAMIC VOLTAGE SWITCHING(DVS).................................................................................................117
TEMPERATURE SENSOR.......................................................................................................................119
DUTY CYCLE CORRECTOR....................................................................................................................120
OPERATING CONDITIONS................................................................................................................................122
Absolute Maximum Ratings...................................................................................................................122
AC & DC Characteristics........................................................................................................................124
CLOCK TO DATA TIMING SENSITIVITY..................................................................................................148
PACKAGE SPECIFICATION................................................................................................................................151
BALL-OUT...............................................................................................................................................151
SIGNALS.................................................................................................................................................153
ON DIE TERMINATION(ODT)....................................................................................................................156
PACKAGE DIMENSIONS...........................................................................................................................157
MIRROR FUNCTION(MF) ENABLE AND X16 MODE ENABLE.................................................................................158
BOUNDARY SCAN............................................................................................................................................163
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
4
H5GQ1H24AFR
FEATURES
FUNCTIONAL DESCRIPTION
• Single ended interface for data, address and command
The GDDR5 SGRAM is a high speed dynamic
• Quarter data‐rate differential clock inputs CK/CK# for random‐access memory designed for applications
ADR/CMD
requiring high bandwidth. GDDR5 devices contain
• Two half data‐rate differential clock inputs WCK/
WCK#, each associated with two data bytes (DQ, DBI#, the following number of bits:
EDC)
• Double Data Rate (DDR) data (WCK)
1 Gb has 1,073,741,824 bits and sixteen banks
• Single Data Rate (SDR) command (CK)
• Double Data Rate (DDR) addressing (CK)
• 16 internal banks
The GDDR5 SGRAM uses a 8n prefetch
• 4 bank groups for tCCDL = 3 tCK
• 8n prefetch architecture: 256 bit per array read or write architecture and DDR interface to achieve high‐
access
speed operation. The device can be configured to
• Burst length: 8 only
operate in x32 mode or x16 (clamshell) mode. The
• Programmable CAS latency: 5 to 20 tCK
mode is detected during device initialization. The
• Programmable WRITE latency: 1 to 7 tCK
GDDR5 interface transfers two 32 bit wide data
• WRITE Data mask function via address bus (single/
double byte mask)
words per WCK clock cycle to/from the I/O pins.
• Data bus inversion (DBI) & address bus inversion Corresponding to the 8n‐prefetch a single write or
(ABI)
read access consists of a 256 bit wide, two CK clock
• Input/output PLL on/off mode
cycle data transfer at the internal memory core and
• Address training: address input monitoring by DQ pins
eight corresponding 32 bit wide one‐half WCK clock
• WCK2CK clock training with phase information by cycle data transfers at the I/O pins. EDC pins
The GDDR5 SGRAM operates from a differential
• Data read and write training via READ FIFO
clock CK and CK#. Commands are registered at
• READ FIFO pattern preload by LDFF command
every rising edge of CK. Addresses are registered at
• Direct write data load to READ FIFO by WRTR command
every rising edge of CK and every rising edge of
• Consecutive read of READ FIFO by RDTR command
CK#. • Read/Write data transmission integrity secured by GDDR5 replaces the pulsed strobes (WDQS &
cyclic redundancy check (CRC‐8)
RDQS) used in previous DRAMs such as GDDR4
• READ/WRITE EDC on/off mode
• Programmable EDC hold pattern for CDR
with a free running differential forwarded clock
• Programmable CRC READ latency = 0 to 3 tCK
(WCK/WCK#) with both input and output data
• Programmable CRC WRITE latency = 7 to 14 tCK
registered and driven respectively at both edges of
• Low Power modes
the forwarded WCK. • RDQS mode on EDC pin
• Optional on‐chip temperature sensor with read‐out
Read and write accesses to the GDDR5 SGRAM are
• Auto & self refresh modes
burst oriented; an access starts at a selected location
• Auto precharge option for each burst access
and consists of a total of eight data words. Accesses
• 32ms, auto refresh (8k cycles)
begin with the registration of an ACTIVE command,
• Temperature sensor controlled self refresh rate
• On‐die termination (ODT); nominal values of 60 ohm which is then followed by a READ or WRITE
and 120 ohm
command. The address bits registered coincident
• Pseudo open drain (POD‐15) compatible outputs (40 with the ACTIVE command and the next rising CK#
ohm pulldown, 60 ohm pullup)
• ODT and output drive strength auto‐calibration with edge are used to select the bank and the row to be
accessed. The address bits registered coincident
external resistor ZQ pin (120 ohm)
• Programmable termination and driver strength offsets with the READ or WRITE command and the next
• Selectable external or internal VREF for data inputs; rising CK# edge are used to select the bank and the
programmable offsets for internal VREF
column location for the burst access.
• Separate external VREF for address / command inputs
• Vendor ID, FIFO depth and Density info fields for identification
• x32/x16 mode configuration set at power‐up with EDC pin
• Mirror function with MF pin
• Boundary scan function with SEN pin
• 1.6V / 1.5V +/‐ 0.045V supply for device operation (VDD)
• 1.6V / 1.5V +/‐ 0.045V supply for I/O interface (VDDQ)
• 170 ball BGA package
Rev. 1.0/Nov. 2009
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H5GQ1H24AFR
ORDERING INFORMATION
Part No
Power Supply
H5GQ1H24AFR-R0C
VDD/VDDQ = 1.6V
CK Frequency WCK Frequency Max Data Rate
1.50GHz
3.00GHz
6.0Gbps/pin
H5GQ1H24AFR-T3C
1.375GHz
2.75GHz
5.5Gbps/pin
H5GQ1H24AFR-T2L (Note1)
1.25GHz
2.50GHz
5.0Gbps/pin
1.25GHz
2.50GHz
5.0Gbps/pin
H5GQ1H24AFR-T1C
1.125GHz
2.25GHz
4.5Gbps/pin
H5GQ1H24AFR-T0C
1.00GHz
2.00GHz
4.0Gbps/pin
H5GQ1H24AFR-T2C
VDD/VDDQ = 1.5V
Interface
POD_15
Above Hynix P/N’s are Leead-free, RoHS Compliant and Halogen-free.
Note.1)It supports not only 5Gbps @ 1.5V, but also 3.2Gbps @ 1.35V.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
0.1. DEFINITION OF SIGNAL STATE TERMINOLOGY
GDDR5 SGRAM will be operated in both ODT Enable (terminated) and ODT Disable (unterminated) modes. For highest data rates it is recommended to operate in the ODT Enable mode. ODT Disable mode is designed to reduce power and may operate at reduced data rates. There exist situations where ODT Enable mode can not be guaranteed for a short period of time, i.e. during power up.
Following are four terminologies defined for the state of a device (GDDR5 SGRAM or controller) pin dur‐
ing operation. The state of the bus will be determined by the combination of the device pins connected to the bus in the system. For example in GDDR5 it is possible for the SGRAM pin to be tristated while the controller pin is High or ODT. In both cases the bus would be High if the ODT is enabled. For details on the GDDR5 SGRAM pins and their function see “PACKAGE SPECIFICATION” on page 156 and “SIG‐
NALS” on page 158 in the section entitled “PACKAGE SPECIFICATION” on page 156.
Device pin signal level:
• High: A device pin is driving the Logic “1” state.
• Low: A device pin is driving the Logic “0” state.
• Hi‐Z: A device pin is tristate.
• ODT: A device pin terminates with ODT setting, which could be terminating or tristate depending on Mode Register setting.
Bus signal level:
• High: One device on bus is High and all other devices on bus are either ODT or Hi‐Z. The voltage level on the bus would be nominally VDDQ
• Low: One device on bus is Low and all other devices on bus are either ODT or Hi‐Z. The voltage level on the bus would be nominally VOL(DC) if ODT was enabled, or VSSQ if Hi‐Z.
• Hi‐Z: All devices on bus are Hi‐Z. The voltage level on bus is undefined as the bus is floating.
• ODT: At least one device on bus is ODT and all others are Hi‐Z. The voltage level on the bus would be nominally VDDQ.
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H5GQ1H24AFR
0.2. CLOCKING
The GDDR5 SGRAM operates from a differential clock CK and CK#. Commands are registered at every rising edge of CK. Addresses are registered at every rising edge of CK and every rising edge of CK#.
GDDR5 uses a DDR data interface and an 8n‐prefetch architecture. The data interface uses two differen‐
tial forwarded clocks (WCK/WCK#). DDR means that the data is registered at every rising edge of WCK and rising edge of WCK#. WCK and WCK# are continuously running and operate at twice the frequency of the command/address clock (CK/CK#). CK#
CK
COMMAND
ADDRESS
WCK#
WCK
DQ*1
Figure 1: GDDR5 Clocking and Interface Relationship Note : Figure.1 shows the relationship between the data rate of the buses and the clocks and is not a timing diagram.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
8
H5GQ1H24AFR
.
GDDR5 SGRAM
Controller
CMD sampled by CK/CK# as SDR
ADD sampled by CK/CK# as DDR
ADD/CMD centered with CK/CK#
CMD/ADD
D
D
Q
CMD/ADD
DRAM core
Q
QB
CK/CK#
(1GHz)
WCK2CK
Alignment
Oscillator
PLL
Data Tx/Rx
D
Q
PLL
/2
WCK/WCK#
(2GHz)
To EDC pin
WCKint
(1GHz)
early/late
Clock Phase
Controller
Phase detector/
Phase accumulator
corelogic
Q
D
Q
Receiver
clock
DQ
D
D
D
DQ [0]‐[7]
(4Gbps)
early/late from
calibration data
Q
Q
DRAM core
Clock Phase
Controller
For 8 data bits
Figure 2: Block Diagram of an example clock system
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
9
H5GQ1H24AFR
1. INITIALIZATION
1.1. POWER‐UP SEQUENCE
GDDR5 SGRAMs must be powered up and initialized in a predefined manner as shown in <Link>Figure . Operational
procedures other than those specified may result in undefined operation. The Mode Registers do not have RESET
default values, except for ABI#, ADR/CMD termination, and the EDC hold pattern. If the mode registers are not set during the initialization sequence, it may lead to unspecified operation.
Step
1
Apply power to VDD
2
Apply power to VDDQ at same time or after power is applied to VDD
3
Apply VREFC and VREFD at same time or after power is applied to VDDQ
4
After power is stable, provide stable clock signals CK/CK#
5
Assert and hold RESET# low to ensure all drivers are in Hi‐Z and all active terminations are off. Assert and hold NOP command.
6
Wait a minimum of 200μs.
7
If boundary scan mode is necessary, SEN can be asserted HIGH to enter boundary scan mode. Boundary scan mode must be entered directly after power‐up while RESET# is low. Once boundary scan is executed, power‐up sequence should be followed.
8
Set CKE# for the desired ADR/CMD ODT settings, then bring RESET# High to latch in the logic state of CKE#, tATS and tATH must be met during this procedure. See <Link>Table 1 for the values and logic states for CKE#. The rising edge of RESET# will determine x32 mode or x16 mode depending on the state of EDC1(EDC2 when MF=1). In normal x32 mode, EDC1 has to be sustained HIGH until RESET# is HIGH. See <Link>Table for the values and logic states for EDC1(EDC2 when MF=1).
9
Bring CKE# Low after tATH is satisfied 10
Wait at least 200μs referenced from the beginning of tATS
11
Issue at least 2 NOP commands
12
Issue a PRECHARGE ALL command followed by NOP commands until tRP is satisfied
13
Issue MRS command to MR15. Set GDDR5 SGRAM into address training mode (optional)
14
Complete address training (optional)
15
Issue MRS command to read the Vendor ID
16
Issue MRS command to set WCK01/WCK01# and WCK23/WCK23# termination values
17
Provide stable clock signals WCK01/WCK01# and WCK23/WCK23#
18
Issue MRS commands to use PLL or not and select the position of a WCK/CK phase detector. The use of PLL and the position of a phase detector should be issued before WCK2CK training. Issue MRS commands including PLL reset to the mode registers in any order. tMRD must be met during this procedure. WLmrs, CLmrs, CRCWL and CRCRL must be programmed before WCK2CK training.
19
Issue two REFRESH commands followed by NOP until tRFC is satisfied
20
After any necessary GDDR5 training sequences such as WCK2CK training, READ training (LDFF, RDTR) and WRITE training (WRTR, RDTR), the device is ready for operation.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
10
H5GQ1H24AFR
Table 1 Address and Command Termination
VALUE (OHMS)
CKE# at RESET# high transition
ZQ/2
Low
ZQ
High
VDD
VDDQ
VREFD/C
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
tATS tATH
((
))
RESET#
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
CK#
((
))
((
))
((
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((
))
((
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((
))
((
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((
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((
))
((
))
((
))
CK
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
CKE#
CMD
ADR
DQ<31:0>,
DBI#<3:0>
EDC<3,0>
EDC<2,1>
((
))
((
))
NOP
((
))
((
))
((
))
))
NOP( (
NOP
((
))
((
))
NOP
((
))
((
))
PRE
((
))
((
))
NOP
((
))
((
))
((
))
((
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((
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((
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((
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((
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((
))
((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
))
((
))
x32
x16
((
))
((
))
))
((
))
TRAIN / MRS
((
((
))
((
))
))
((
))
TRAIN / MRS
((
((
))
((
))
((
))
((
))
((
))
((
))
((
))
ADR
((
))
((
))
A.C.
((
))
((
))
((
))
((
))
))
))
ADR
ADR ADR
((
((
((
))
((
))
((
))
((
))
))
((
))
((
))
((
))
TRAIN / MRS
((
((
))
((
))
((
))
((
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))
((
))
((
))
((
))
TRAIN / MRS
((
((
))
A.C.
((
))
((
))
((
))
((
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))
((
))
((
))
((
))
TRAIN / MRS
((
WCK#
((
))
((
))
((
))
((
))
((
))
((
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((
))
((
))
((
))
((
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((
))
WCK
((
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((
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((
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((
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((
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((
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((
))
((
))
((
))
((
))
((
))
All Banks
Precharge
min. 200 μs
min. 200 μs
Execution of steps
13‐21 in Power‐up
sequence
tRP
Voltages and
CK stable
Note: A.C. = Any Command
Figure 3: GDDR5 SGRAM Power‐up Initialization
1.2. Initialization with Stable Power
The following sequence is required for reset subsequent to power‐up initialization. This requires that the power has been stable within the specified VDD and VDDQ ranges since power‐up initialization (See Figure 4)
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
11
H5GQ1H24AFR
1) Assert RESET# Low anytime when reset is needed.
2) Hold RESET# Low for minimum 100ns. Assert and hold NOP command.
3) Set CKE# for the desired ADR/CMD ODT settings, then bring RESET# High to latch in the logic state of CKE#; tATS and tATH must be met during this procedure. Keep EDC1 (MF=0) / EDC2 (MF=1) at the same logic level as during power‐up initialization as device functionality is not guaranteed if the I/O width has changed.
4) Continue with step 9 of the power‐up initialization sequence.
VDD, VDDQ
VREFD/C
((
))
((
))
((
))
((
))
((
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((
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tATS tATH
((
))
RESET#
((
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((
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((
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((
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((
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((
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((
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((
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((
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CK#
((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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CK
((
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((
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((
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((
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((
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((
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((
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((
))
((
))
((
))
((
))
CKE#
CMD
ADR
DQ<31:0>,
DBI#<3:0>
EDC<3:0>
((
))
((
))
NOP
((
))
((
))
((
))
))
NOP( (
NOP
((
))
((
))
NOP
((
))
((
))
PRE
((
))
((
))
NOP
((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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TRAIN / MRS
((
((
))
((
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))
((
))
TRAIN / MRS
((
A.C.
ADR
((
))
((
))
A.C.
((
))
((
))
((
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((
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))
))
ADR
ADR ADR
((
((
((
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((
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((
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((
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((
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((
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((
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TRAIN / MRS
((
((
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((
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((
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((
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))
((
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((
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((
))
TRAIN / MRS
((
WCK#
((
))
((
))
((
))
((
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((
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((
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((
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((
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((
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((
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((
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WCK
((
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((
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((
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((
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((
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((
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((
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((
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((
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((
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((
))
All Banks
Precharge
min. 100 ns
min. 200 μs
Execution of steps
13‐21 in Power‐up
sequence
tRP
Notes: 1. A.C. = Any Command
2. Device functionality is not guaranteed if x32/x16 mode is not the same as during power‐up initialization.
Figure 4: Initialization with Stable Power
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
12
H5GQ1H24AFR
1.2. VENDOR ID
GDDR5 SGRAMs are required to include a Vendor ID feature that allows the controller to receive informa‐
tion from the GDDR5 SGRAM to differentiate between different vendors and different devices using a software algorithm. When the Vendor ID function is enabled the GDDR5 SGRAM will provide its Manufacturers Vendor Code on bits [3:0] as shown in Table 2; Revision Identification on bits [7:4]; Density on bits [9:8] ; FIFO Depth on bits [11:10] as shown in Table 3 & Table4. Bits [15:12] are RFU. Vendor ID is part of the INFO field of Mode Register 3 (MR3) and is selected by issuing a MODE REGIS‐
TER SET command with MR3 bit A6 set to 1, and bit A7 set to 0. MR3 bits A0‐A5 and A8‐A11 are set to the desired values. The Vendor ID will be driven onto the DQ bus after the MRS command that sets bits A6 to 1 and A7 to 0. The DQ bus will be continuously driven until an MRS command sets MR3 A6 and A7 back to 0 to disable the INFO field or to another valid state for the INFO field if the INFO field includes support for additional vendor specific information. The DQ bus will be in ODT state after tWRIDOFF (max). The code can be sam‐
pled by the controller after waiting tWRIDON (max) and before tWRIDOFF (min). DBI is not enabled or ignored during all Vendor ID operations. Table 4 shows the mapping of the Vendor ID info to the physical DQs. The 16 bits of Vendor ID are sent on Byte 0 and 2 when MF=0. When MF=1 the 16 bits are sent on Byte 1 and 3. Optionally the vendor may replicate the data on the other 2 bytes when in x32 mode. Byte 0 would be replicated on Byte 1 and Byte 2 would be replicated on Byte 3 when MF=0. When MF=1, Byte 1 would be replicated on Byte 0 and Byte 3 would be replicated on Byte 2.
TABLE 2. Manufacturers Vendor Code
Manufacturers ID
Bit 3
Bit 2
Bit 1
Bit 0
Name of Company
0
0
0
0
0
Reserved
1
0
0
0
1
Samsung
2
0
0
1
0
Qimonda
3
0
0
1
1
Elpida
4
0
1
0
0
Etron
5
0
1
0
1
Nanya
6
0
1
1
0
Hynix
7
0
1
1
1
ProMOS
8
1
0
0
0
Winbond
9
1
0
0
1
ESMT
A
1
0
1
0
Reserved
B
1
0
1
1
Reserved
C
1
1
0
0
Reserved
D
1
1
0
1
Reserved
E
1
1
1
0
Reserved
F
1
1
1
1
Micron
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
Table 3 Revision ID & Density & FIFO Depth
Revision ID
Density
FIFO
Bit 7
Bit 6
Bit 6
Bit 4
Bit 9
Bit 8
Bit 11
Bit 10
0
0
0
1
0
1
1
0
Table 4 Vendor ID to DQ mapping
Bit
7
6
5
4
3
2
1
0
MF=0
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
MF=1
DQ31
DQ30
DQ29
DQ28
DQ27
DQ26
DQ25
DQ24
Feature
Revision Identification
Manufacturers Vendor Code
Bit
15
14
13
12
11
10
9
8
MF=0
DQ23
DQ22
DQ21
DQ20
DQ19
DQ18
DQ17
DQ16
MF=1
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
DQ8
Feature
RFU
FIFO Depth
Density
CK#
CK
CMD
BA0‐BA3
A2‐A5
NOP
MRS
NOP
NOP
NOP
NOP
MRS
NOP
MRA Code
MRA Code
A8
A7
Code
Code
A11
A6
Code
Code
Code Code
Code Code
A9,A10
A0,A1
tWRIDON(max)
DQ
NOP
NOP
NOP
tWRIDOFF(min)
Vendor ID + Rev Code MRA = Mode Register Address; Code = Opcode to be loaded
Donʹt Care
Figure 5: Vendor ID Timing Diagram
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
2. ADDRESS
2.1. ADDRESSING
GDDR5 SGRAMs use a double data rate address scheme to reduce pins required on the GDDR5 SGRAM as shown in Table 5. The addresses should be provided to the GDDR5 SGRAM in two parts; the first half is latched on the rising edge of CK along with the command pins such as RAS#, CAS# and WE#; the second half is latched on the next rising edge of CK#.
The use of DDR addressing allows all address values to be latched in at the same rate as the SDR com‐
mands. All addresses related to command access have been positioned for latching on the initial rising edge for faster decoding.
Table 5 Address Pairs
Clock
Rising CK
BA3
BA2
BA1
BA0
(A12)
A11
A10
A9
A8
Rising CK#
A3
A4
A5
A2
(RFU)
A6
A0
A1
A7
Note: Address pin A12 is required only for 2G density.
GDDR5 addressing includes support for 1G density. For all densities two modes are supported (x32 mode or x16 mode). x32 and x16 modes differ only in the number of valid column addresses, as shown in Table6. Table 6 Addressing Scheme
1G
x32 mode
x16 mode
Row address
A0~A11
A0~A11
Column address
A0~A5
A0~A6
Bank address
BA0~BA3
BA0~BA3
Autoprecharge
A8
A8
Page Size
2K
2K
Refresh 8K/32ms
8K/32ms
Refresh period
3.9us
3.9us
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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2.2. ADDRESS BUS INVERSION (ABI)
Address Bus Inversion (ABI) reduces the power requirements on address pins, as the no. of address lines driving a low level can be limited to 4 (in case A12/RFU is not wired) or 5 (in case A12/RFU is wired).
The Address Bus Inversion function is associated with the electrical signalling on the address lines between a controller and the GDDR5 SGRAM, regardless of whether the information conveyed on the address lines is a row or column address, a mode register op‐code, a data mask, or any other pattern.
The ABI# input is an active Low double data rate (DDR) signal and sampled by the GDDR5 SGRAM at the rising edge of CK and the rising edge of CK# along with the address inputs.
Once enabled by the corresponding ABI Mode Register bit, the GDDR5 SGRAM will invert the pattern received on the address inputs in case ABI# was sampled Low, or leave the pattern non‐inverted in case ABI# was sampled High, as shown in Figure 6.
Address Pins
8 (9)
ABI#
8 (9)
to DRAM core
from Mode Register:
0 = enabled
1 = disabled
Note: bus width is 8 when A12/RFU pin is not present, and 9 when A12/RFU pin is present
Figure 6: Example of Address Bus Inversion Logic
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Rev. 1.0 /Nov. 2009
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The flow diagram in Figure 7 illustrates the ABI operation. The controller decides whether to invert or not invert the data conveyed on the address lines. The GDDR5 SGRAM has to perform the reverse operation based on the level of the ABI# pin. Address input timing parameters are only valid with ABI being enabled and a maximum of 4 address inputs driven Low. Controller
Data to be sent on address lines
Determine ’0’
count
No
’0’ count
> 4 ?
Yes
ABI# = ’H’
Don’t invert
ABI# = ’L’
Invert
ABI# = ’H’
Don’t invert
ABI# = ’L’
Invert
GDDR5
SGRAM
Data received on address lines
Figure 7: Address Bus Inversion (ABI) Flow Diagram
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
2.3. BANK GROUPS
For GDDR5 SGRAM devices operating at frequencies above a certain threshold, the activity within a bank group must be restricted to ensure proper operation of the device. The 8 or 16 banks in GDDR5 SGRAMs are divided into four bank groups. The bank groups feature is controlled by bits A10 and A11 in Mode Register 3 (MR3). The assignment of the banks to the bank groups is shown in Table 7.
Table 7 Bank Groups
Bank
Addressing
1G
BA3
BA2
BA1
BA0
0
0
0
0
0
1
0
0
0
1
2
0
0
1
0
3
0
0
1
1
4
0
1
0
0
5
0
1
0
1
6
0
1
1
0
7
0
1
1
1
8
1
0
0
0
9
1
0
0
1
10
1
0
1
0
11
1
0
1
1
12
1
1
0
0
13
1
1
0
1
14
1
1
1
0
15
1
1
1
1
16 banks
Group A
Group B
Group C
Group D
These bank groups allow the specification of different command delay parameters depending on whether back‐to‐back accesses are to banks within one bank group or across bank groups as shown in Table 8.
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
Table 8 Command Sequences Affected by Bank Groups
Corresponding AC Timing Parameter
Command Sequence
ACTIVE to ACTIVE
Bank Groups Disabled
Bank Groups Enabled
Notes
Accesses to different bank Accesses within the same groups
bank group
tRRDS
tRRDS
tRRDL
WRITE to WRITE
tCCDS
tCCDS
tCCDL
READ to READ
tCCDS
tCCDS
tCCDL
Internal WRITE to READ
tWTRS
tWTRS
tWTRL
READ to PRECHARGE
tRTPS
1 tck
tRTPL
1
Note.1 : Parameters tRTPS and tRTPL apply only when READ and PRECHARGE go to the same bank; use tRTPS when BG are disabled, and tRTPL when BG are enabled.
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
Back-to-back column accesses based on tCCDL and tCCDS parameters.
Example 1 (Bank Groups disabled): tCCDS = 2 * tCK
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
CLK
CAS A0
DQ
A1
A0
B0
A1
B1
B0
C0
B1
C1
C0
D0
C1
D0
Example 2: (Bank Groups enabled): tCCDL = 4 * tCK
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
CLK
CAS A0
DQ
A1
A0
A2
A1
A3
A2
A3
Example 3: (Bank Groups enabled): tCCDS = 2 * tCK
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
CLK
CAS A0
DQ
B0
A0
A1
B0
B1
A1
C0
B1
D0
C0
C1
D0
C1
Notes:
1) Column accesses are to open banks, and tRCD has been met.
2) CL = 0 assumed
3) Ax, Bx, Cx, Dx: accesses to bank groups A, B, C or D, respectively 4) With bank groups enabled, tCCDL is 3tCK, as programmed in MR3.
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3. TRAINING
3.1. INTERFACE TRAINING SEQUENCE
Due to the high data rates of GDDR5, it is recommended that the interfaces be trained to operate with the optimal timings. GDDR5 SGRAM has features defined which allow for complete and efficient training of the I/O interface without the use of the GDDR5 SGRAM array. The interface trainings are required for nor‐
mal DRAM functionality unless running in lower frequency modes as described in the low frequency sec‐
tion. Interface timings will only be guaranteed after all required trainings have been executed.
A recommended order of training sequences has been chosen based on the following criteria:
The address training must be done first to allow full access to the Mode Registers. (MRS for address train‐
ing is a special single data rate mode register set guaranteed to work without training). Address input tim‐
ing shall function without training as long as tAS/H are met at the GDDR5 SGRAM.
WCK2CK training should be done before read training because a shift in WCK relative CK will cause a shift in all READ timings relative to CK.
READ training should be done before WRITE training because optimal WRITE training depends on cor‐
rect READ data.
Initialization
Address Training (optional)
WCK2CK Alignment Training
READ Training
WRITE Training
Start Normal Operation
Figure 8: Interface Training Sequence
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
3.2. ADDRESS TRAINING
The GDDR5 SGRAM provides means for address bus interface training. The controller may use the address training mode to improve the timing margins on the address bus.
Address training mode is entered and exited via the ADT bit in Mode Register 15 (MR15). Mode Register 15 supports the same setup and hold times on the address pins as for commands to allow a safe entry into address training mode.
Address training mode uses an internal bridge between the GDDR5 SGRAM’s address inputs and DQ/
DBI# outputs. It also uses a special READ command for address capture that is encoded using the SDR command pins only (CS#,RAS#,CAS#,WE# = L,H,L,H). The address values normally used to encode the commands will not be interpreted. Once the address training mode has been entered, the address values registered coincident with this special READ command will be transmitted to the controller on the DQ/
DBI# pins. The controller is then expected to compare the address pattern received to the expected value and to adjust the address transmit timing accordingly. The procedure may be repeated using different address pattern and interface timings.
No WCK clock is required for this special READ command operation during address training mode. The latched addresses are driven out asynchronously. The only commands allowed during address training mode are this special READ, MRS (e.g. to exit address training mode) and NOP / DESELECT.
When enabled by the ABI bit in Mode Register 1, address bus inversion (ABI) is effective during address training mode. It is suggested to train the ABI# pin’s interface timing together with the other address lines. The timing diagram in Figure 9 illustrates the typical command sequence in address training mode. The DQ/DBI# output drivers are enabled as long as the ADT bit is set. The minimum spacing between consec‐
utive special READ commands is 2 tCK.
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
CK#
CK
CMD
MRS
ADDR
MR15
A10=1
NOP
READ (*)
NOP
READ (*)
ADRx ADRx
R#
R
NOP
READ (*)
ADRy ADRy
R
R#
NOP
MRS
ADRz ADRz
R
R#
NOP
NOP
NOP
MR15
A10=0
tADR
tMRD
NOP
tADZ
tADR
tADR
Even
DQ
ADRx
R
ADRy
R
ADRz
R
Odd
DQ
ADRx
R#
ADRy
R#
ADRz
R#
Donʹt Care
Notes:
1) READ command encoding: CS# = L, RAS# = H, CAS# = L, WE# = H 2) ADRxR = 1st half of address x, sampled on rising edge of CK; ADRxR# = 2nd half of address x, sampled on rising edge of CK#
3) Addresses sampled on rising edge of CK are returned on even DQ after tADR; addresses sampled on rising edge of CK# are returned on odd DQ simultaneously with even DQ
4) DQs are enabled when ADT bit in Mode Register 15 set to 1 (Enter Address Training Mode)
DQs are disabled after tADZ when ADT bit in Mode Register 15 set to 0 (Exit Address Training Mode)
Figure 9: Address Training Timing
Table 9 AC timings in Address Training Mode
Parameter
Symbol
Min
Max
Unit
READ command to data out delay tADR
0.5*tCK+0
0.5*tCK+10
ns
ADT off to DQ/DBI# in ODT state delay
tADZ
‐‐
0.5*tCK+10
ns
Table 10 defines the correspondence between address bits and DQ/DBI#. Devices configured to x16 mode reflect the address on the two bytes being enabled in that mode, which are bytes 0 and 2 for MF=0 and bytes 1 and 3 for MF=1 configurations. Devices configured to x32 mode reflect the address on the same DQ as in x16 mode; in addition they are allowed but not required to reflect the address on those bytes that are disabled in x16 mode, thus reflecting each address twice.
Devices not supporting an A12/RFU pin shall drive a logic High on the DBI# pins. This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
Table 10 Address to DQ Mapping in Address Training Mode
Output
DQ
Output
DQ
Address bits registered at rising edge of CK
A12
A8
A11
BA1
BA2
BA3
BA0
A9
A10
DBI0#
DQ22
DQ20
DQ18
DQ16
DQ6
DQ4
DQ2
DQ0
DBI1#
DQ30
DQ28
DQ26
DQ24
DQ14
DQ12
DQ10
DQ8
RFU
A7
A6
A5
A4
A3
A2
A1
A0
DBI2#
DQ23
DQ21
DQ19
DQ17
DQ7
DQ5
DQ3
DQ1
DBI3#
DQ31
DQ29
DQ27
DQ25
DQ15
DQ13
DQ11
DQ9
Address bits registered at rising edge of CK#
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
3.3. WCK2CK TRAINING
The purpose of WCK2CK training is to align the data WCK clock with the command CK clock to aid in the GDDR5 SGRAM’s internal data synchronization between the logic clocked by CK/CK# and WCK/WCK#. This will help to define both Read and Write latencies between the GDDR5 SGRAM and memory control‐
ler. WCK2CK training mode is controlled via MRS. Before starting WCK2CK training, the following conditions must be met:
• CK/CK# clock is stable and toggling
• The timing of all address and command pins must be guaranteed
• PLL on/off(MR1 bit A7) and PLL delay compensation enable(MR7 bit A2) are set to desired mode before WCK to CK training is started
• The desired WCK2CK alignment point (MR6, bit A0) is selected
• The EDC hold pattern (MR4, bits A0‐A3) must be programmed to ‘1111’
• 2 Mode Register bits for internal WCK01 and WCK23 inversion (MR3, bits A2‐A3) must be set to a known state • All banks are idle and no other command execution is in progress
WCK2CK training must be done after any of the following conditions:
• Device initialization
• Any CLmrs, WLmrs, CRCRL or CRCWL latency change
• CK and WCK frequency changes
• PLL on/off(MR1 bit A7) and PLL delay compensation mode(MR7 bit A2) changes
• Change of the WCK2CK alignment point (MR6, bit A0)
• WCK state change from off to toggling, including self refresh exit or exit from power‐down when bit A1 (LP2) in MR5 is set
Figure 10 and Figure 11 show example WCK2CK training sequences. WCK2CK training is entered via MRS by setting bit A4 in MR3. This will initiate the WCK divide‐by‐2 circuits associated with WCK01 and WCK23 clocks in the GDDR5 SGRAM. In case the divide‐by‐2 circuits are at opposite output phases, which is indicated by opposite “early/late” phases on the EDC pins associated with WCK01 and WCK23 (see below), they may be put in phase by using the WCK01 and WCK23 inversion bits. Alternatively, the WCK clocks may be put into a stable inactive state for this initialization event to aid in resetting all divid‐
ers to the same output phase as shown in <Link>Figure 11. The challenge of this method is to restart the WCK clocks in a way that even their first clock edges meet the WCK clock input specification. Otherwise, divide‐by‐2 circuits for both WCK01 and WCK23 might again have opposite phase alignment. Figure 12 illustrates how the WCK phase information is derived. The phase detectors (PD) sample the internally divided‐by‐2 WCK clocks. Only one sample point is shown in the figure for clarity. In reality, when WCK2CK training mode is enabled, a sample will occur every tCK and will be translated to the EDC pins accordingly. If the divided‐by‐2 WCK clock arrives early, then the EDC pin outputs the EDC hold pattern during the time interval specified in Figure 12. If the divided‐by‐2 WCK clock arrives late, then the EDC pin outputs the inverted EDC hold pattern during the time interval specified in Figure 12. This is shown in Table 11.
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
CK
CK#
CMD
NOP
NOP
MRS
NOP
NOP
NOP
NOP
MRS
MRS
A.C.
WCK
WCK#
tLK
Enter WCK2CK Training
Start WCK2CK Phase Search
PLL Reset (PLL on only)
tMRD
Exit WCK2CK Training
(sets data synchronizers, rests FIFO pointers)
Figure 10: Example WCK2CK Training Sequence
CK#
CK
CMD
NOP
MRS
NOP
NOP
NOP
NOP
NOP
NOP
MRS
MRS
Valid
WCK
WCK#
tWCK2MRS
tMRSTWCK
Enter WCK2CK
Training by MRS
(resets WCK divide‐
by‐2 circuits)
tWCK2TR
WCK
Restart
Start WCK2CK
Phase Search
tLK
PLL Reset (PLL on only)
tMRD
Exit WCK2CK Training by MRS
(Set data synchronizers, resets FIFO pointers)
Figure 11: Example WCK2CK Training Sequence with WCK Stopping
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Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
CK
1
WCK01/2
WCK23/2
(internal)
1 Early
‐ tWCK2CK
EDC0
EDC2
x
x
x
x
x
WCK Early
x
x
x
x
1 1 1 1
x
x
x
x
x
~
~
tWCKTPH
0
WCK01/2
WCK23/2
(internal)
+ tWCK2CK
EDC0
EDC2
2 Late
x
x
x
x
x
x
WCK Late
x
x
x
x
0 0 0 0
x
x
x
x
x
x
~
~
tWCKTPH
WCK01/2
WCK23/2
(internal)
EDC0
EDC2
3 Aligned
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
~
~
tWCKTPH
Figure 12: EDC pin Behaviour for WCK2CK Training (assumes ‘1111’ as EDC Hold Pattern)
Table 11 Phase Detector and EDC Pin behavior
WCK/2 value sampled by CK
WCK2CK Phase
Data on EDC Pin
Action
‘1’
‘Early’
EDC hold (‘1111’)
Increase Delay on WCK
‘0’
‘Late’
Inverted EDC Hold (‘0000’)
Decrease Delay on WCK
The ideal alignment is indicated by the phase detector output transitioning from “early” to “late” when the delay of the WCK phase is continuously increased. The WCK phase range for ideal alignment is speci‐
fied by the parameter tWCK2CKPIN ; the value(s) vary with the PLL mode (on or off) and the selected align‐
ment point. If enabled, the PLL shall not interfere in the behavior of the WCK2CK training. Significantly moving the phase and/or stopping the WCK during training may disturb the PLL. It is required to perform a PLL reset after the WCK2CK training has determined and selected the proper alignment between WCK and CK clocks. The PLL lock time tLK must be met before exiting WCK2CK training to guarantee that the PLL is in lock such that the GDDR5 SGRAM data synchronizers are set upon WCK2CK training exit. WCK2CK training is exited via MRS by resetting bit A4 in MR3. For proper reset of the data synchronizers it is required that the WCK and CK clocks are aligned within tWCK2CKSYNC at the time of the WCK2CK training exit. This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
After exiting WCK2CK training mode, the WCK phase is allowed to further drift from the ideal alignment point by a maximum of tWCK2CK (e.g. due to voltage and temperature variation). Once this WCK phase drift exceeds tWCK2CK(min) or tWCK2CK(max), it is required to repeat the WCK2CK training and realign the clocks.
WCK2CK alignment at PIN Mode The WCK and CK phase alignment point can be changed via MRS by setting bit A0 in MR6. In normal mode, when MR6 A0 is set to ‘0’, the phases of CK and WCK are aligned at CK pins and the end of WCK tree as shown in Figure 13. On the other hand, when MR6 A0 is set to ‘1’, the phases of CK and WCK are aligned at the pin as shown in Figure 14. PIN mode is supported up to the max CK clock frequency of fCKPIN, and is an option to reduce the time of WCK2CK training at low frequency.
WCK
WCK#
D
Q
CK
Internal WCK/2
CK
CK#
Phase
Detector
Internal CK
EDC
Figure 13: Normal Mode
WCK
WCK#
CK
CK#
D
Q
CK
Internal WCK/2
Phase
Detector
Internal CK
EDC
Figure 14: Pin Mode
WCK2CK Auto Synchronization GDDR5 SGRAMs support a WCK2CK automatic synchronization mode that eliminates the need for WCK2CK training upon power‐down exit. This mode is controlled by the autosync bit (MR7, bit A4), and is effective when the LP2 bit (MR5, bit A1) is set and the WCK clocks are stopped during power‐down. This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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Also, this mode works for both normal and PIN mode. When WCK2CK automatic synchronization mode is enabled, a full WCK2CK training including Phase search is not required after power‐down exit, although WCK2CK MRS must be issued momentarily for setting the data synchronizers. However, WCK and CK clocks must meet the tWCK2CKSYNC specification upon power‐down exit. Any allowed command may be issued after tXPN or after tLK in case the PLL had been enabled upon power‐down entry. The PLL sequence is not affected by this mode. The use of WCK2CK automatic synchronization mode is restricted to lower operating frequencies up to fCKAUTOSYNC as described in the datasheets.
Table 12 describes WCK2CK training methods for different frequency ranges. Each Frequency range is vendor specific. Normal and PIN mode of WCK2CK training are described in Table 12. Each frequency range is DRAM vendor specific. Divider initialization can be done by training with WCK2CK inversion, WCK2CK stopping, or WCK2CK auto‐sync. If the user wants to use WCK2CK stop for divider initializa‐
tion instead of WCK2CK auto‐sync, the user must not set the WCK2CK auto‐sync. Low frequency, the combined use of PIN and WCK2CK auto‐sync modes can minimize WCK2CK training time.
Table 12 WCK2CK training simplified for Normal mode and PIN mode
High Frequency Low Frequency ≥ 2Gbps
＜ 2Gbps
Frequency
WCK2CK alignment mode
Normal
PIN
Normal
PIN
Phase Search
Required
Required
No*
No*
* Note: The divided WCK/WCK# should be aligned CK/CK# by WCK2CK Auto Synchronization or WCK stop mode
The following examples describe the WCK2CK training in more detail.
Example 1: outline of a basic WCK2CK training sequence without WCK clock stop:
1) Enable training mode via MRS and wait tMRD
2) Sweep and observe the phase independently for WCK01 on EDC0 and WCK23 on EDC2; in case
the internal divide‐by‐2 circuits are at opposite phase use either the WCK01 or WCK23 inversion bit
to flip one of the WCK divide‐by‐2 circuits
3) Adjust the WCK phase independently for WCK01 and WCK23 to the optimal point (“ideal alignment”)
4) Issue a PLL reset and wait for tLK (PLL on mode only)
5) While all WCK and CK are aligned, exit WCK2CK training mode via MRS
6) Wait tMRD for the reset of data synchronizers
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
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Example 2: outline of a basic WCK2CK training sequence with optional WCK clock stop:
1) Stop WCK clocks with WCK01/WCK23 LOW and WCK01#/WCK23# HIGH
2) Wait tWCK2MRS for internal WCK clocks to settle
3) Enable training mode via MRS and wait tMRD for divide‐by‐2 circuits to reset
4) Start WCK clocks without glitches (both divide‐by‐2 circuits remain in sync)
5) Wait tWCK2TR for internal WCK clocks to stabilize
6) Sweep and observe the phase independently for WCK01 on EDC0 and WCK23 on EDC2; adjust the WCK phase to the optimal point (“ideal alignment”)
7) Issue a PLL reset and wait tLK (PLL on mode only)
8) While all WCK and CK are aligned, exit WCK2CK training mode via MRS
9) Wait tMRD for the reset of data synchronizers
READ and WRITE latency timings are defined relative to CK. Any offset in WCK and CK at the pins and/
or the phase detector will be reflected in the latency timings. The parameters used to define the relation‐
ship between WCK and CK are shown in Figure 6. For more details on the impact on READ and WRITE timings see the OPERATIONS section.
tCK
tCH
tCL
CK#
CK
Case 1: Negative tWCK2CKPIN; tWCK2CK = 0 (ideal WCK2CK alignment)
tWCKH tWCKL
tWCK
tWCK2CKPIN
WCK#
WCK
Case 2: Negative tWCK2CKPIN; negative tWCK2CK
tWCK2CKPIN + tWCK2CK
WCK#
WCK
Case 3: Positive tWCK2CKPIN; tWCK2CK = 0 (ideal WCK2CK alignment)
tWCK2CKPIN
WCK#
WCK
Case 4: Positive tWCK2CKPIN; positive tWCK2CK
WCK
tWCK2CKPIN + tWCK2CK
WCK#
Note: tWCK2CKPIN and tWCK2CK parameter values could be negative or positive numbers, depending on the selected
WCK2CK alignment point, PLL‐on‐or PLL‐off mode operation and design implementation. They also vary across PVT. WCK2CK training is required to determine the correct WCK‐to‐CK phase for stable device operation. Figure 15: WCK2CK Timings
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
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GDDR5 WCK2CK Training in x16 mode
For configurations with WCK clocks not shared between two GDDR5 SGRAMs it is suggested to set the WCK phase to the ideal alignment point. However, for configurations where two GDDR5 SGRAMs (x16) share their WCK clocks as in a x16 clamshell, an offset given by the midpoint of both DRAM’s ideal WCK positions may be required. The maximum allowed offset in this case is specified by parameter tWCK2CKSYNC: it defines the WCK offset range from the ideal alignment which still guarantees a GDDR5 SGRAM device to internally synchronize its WCK and CK clocks upon training exit.
Example: outline of training sequence for x32 and x16 configurations with 2 GDDR5 SGRAMs sharing their WCK clocks (e.g. clamshell):
1) Enable training mode for both DRAMs via MRS and wait tMRD
2) For both DRAMs sweep and observe the phase independently for WCK01 on EDC0 and WCK23 on EDC2; in case the internal divide‐by‐2 circuits are at opposite phases use either the WCK01 or WCK23 inversion bit to flip one of the WCK divide‐by‐2 circuits; in case of shared CS# signals use MREMF0 and MREMF1 bits in MR15 to explicitly direct the MRS command for this phase flipping to either DRAM1 or DRAM2 (“soft chip select”);
3) Sweep and observe the phase on DRAM1 independently for WCK01 on EDC0 and WCK23 on EDC2; store the setting for the optimal WCK phase
4) Sweep and observe the phase on DRAM2 independently for WCK01 on EDC0 and WCK23 on EDC2; store the setting for the optimal WCK phase
5) Sweep WCK01 and WCK23 phase to midpoint of DRAM1 and DRAM2 optimal settings
6) Issue a PLL reset and wait for tLK (PLL on mode only)
7) While all WCK and CK are aligned, exit WCK2CK training mode via MRS
8) Wait tMRD for the reset of data synchronizers
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
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3.4. READ TRAINING
Read training allows the memory controller to find the data‐eye center (symbol training) and burst frame location (frame training) for each high‐speed output of the GDDR5 SGRAM. Each pin (DQ0‐DQ31, DBI0#‐
DBI3#, EDC0‐EDC3) can be individually trained during this sequence.
For Read Training the following conditions must be true:
• at least one bank is active, or an auto refresh must be in progress and bit A2 in Mode Register 5 (MR5) is set to 0 to allow training during auto refresh (to disable this special REF enabling of the WCK clock tree an ACT command must be issued, or the device must be set into power‐down or self refresh mode)
• WCK2CK training must be complete • the PLL must be locked, if enabled
• RDBI and WDBI must be enabled prior to and during Read Training if the training shall include the DBI# pins. RDCRC and WRCRC must be enabled prior to and during Read Training if the training shall include the EDC pins.
The following commands are associated with Read Training:
• LDFF to preload the Read FIFO;
• RDTR to read a burst of data directly out of the Read FIFO.
Neither LDFF nor RDTR access the memory core. No MRS is required to enter Read Training.
Figure 16 shows an example of the internal data paths used with LDFF and RDTR. Table 13 lists AC timing parameters associated with Read Training.
Table 13 LDFF and RDTR TIMINGS
VALUES
PARAMETER
a.
SYMBOL
UNIT NOTES
MIN
MAX
ACTIVE to LDFF command delay
tRCDLTR
10
–
ns
ACTIVE to RDTR command delay
tRCDRTR
10
–
ns
REFRESH to RDTR or WRTR command delay
tREFTR
10
–
ns
RDTR to RDTR command delay
tCCDS
2
–
tCK
LDFF to LDFF command cycle time
tLTLTR
4
–
tCK
LDFF(111) to LDFF command cycle time
tLTL7TR
4
–
tCK
LDFF(111) to RDTR command delay
tLTRTR
4
–
tCK
READ or RDTR to LDFF command delay
tRDTLT
4
–
tCK
a
The min. value does not exceed 8 tCK.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
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H5GQ1H24AFR
Serial to Parallel Converter
9
RX
e.g. 500Mbps
DQ
72
8:1
WRTR strobe
(CK domain)
M
U
X
e.g. 4Gbps
9
9
2
3
4
5
6
DRAM
Core
CRC8
72
7
10 11 12 13 14 15
M
U
X
72
24 25 26 27 28 29 30 31
72
8:1
1
8
16 17 18 19 20 21 22 23
Parallel to Serial Converter
TX
0
64
WRTR
FIFO 6 × 72=432 bits per byte
DQ0‐DQ7
DBI0#
Reverse
DBI
72
DBI
64
72
32 33 34 35 36 37 38 39
e.g.
40 41 42 43 44 45 46 47
500Mbps
48 49 50 51 52 53 54 55
WRTR
LDFF
56 57 58 59 60 61 62 63
64 65 66 67 68 69 70 71
RDTR strobe
(WCK)
0 1 2 3 4 5
input
pointer
0 1 2 3 4
output
pointer
M
U
X
CRC FIFO 6 × 8 =48 bits per byte
EDC0
TX
8:1
8
RDTR strobe
(WCK)
ADDR
M
U
X
8
Parallel to Serial Converter
0
1
2
3
0 1 2 3 4
output
pointer
4
5
6
7
WRTR strobe
LDFF strobe (burst 7)
8
8
DEMUX
LDFF
0 1 2 3 4 5
input
pointer
M
U
X
BA0‐BA2
10
CRC strobe
LDFF strobe (burst 7)
Address Path
8
RX
Notes:
1) FIFO depth of 5 shown; supported FIFO depths: 4, 5 or 6
2) data paths shown for 1 of 4 bytes (byte 0)
Data path used with LDFF
Data path used with WRTR
Data path used with LDFF/WRTR
Data path used with RDTR
Figure 16: Data Paths used for Read and Write Training
LDFF Command
The LDFF command (Figure 17) is used to securely load data to the GDDR5 SGRAM Read FIFOs via the address bus. Depending on the GDDR5 SGRAM READ FIFO depth nFIFO 6, any bit pattern of length 32‐
48 can be loaded uniquely to every DQ, DBI# and EDC pin within a byte. The FIFO depth is fixed by design and can be read via the Vendor ID function.
Eight LDFF commands are required to fill one FIFO stage; each LDFF command loads one burst position, and the bank addresses BA0‐BA2 select the burst position from 0 to 7.
The data pattern is conveyed on address pins A0‐A7 for DQ0‐DQ7, A9 for DBI0#, and BA3 for EDC0; the data are internally replicated to all 4 bytes, as shown in Figure 18.
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LDFF loads the DBI FIFO regardless of the WDBI and RDBI Mode Register bits. It also loads the EDC FIFO regardless of the WRCRC and RDCRC Mode Register bits, and no CRC is calculated; however, RDBI and RDCRC must be enabled to read the DBI and EDC bits, respectively, with the RDTR command.
LDFF
CK#
CK
CKE#
LOW
CS#
RAS#
CAS#
WE#
A9, BA3
A1, A3
A8,A10,A11
A0,A7,A6
BA0‐BA2
A2, A4,A5
DATA
DATA
0,0,1
DATA
BP
DATA
BP = Burst Position
DATA = FIFO data
Figure 17: LDFF Command
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H5GQ1H24AFR
LDFF Command
1 FIFO STAGE = 1 BURST
Address‐to‐DQ Mapping
Byte 0 Byte 1 Byte 2 Byte 3
CK#
CK
L A10
A9
BA0
BA3
BA2
BA1
H A11
L A8
A0
A1
A2
A3
A4
A5
A6
A7
A0
DQ0
DQ8
DQ16 DQ24
A1
DQ1
DQ9
DQ17 DQ25
A2
DQ2
DQ10 DQ18 DQ26
A3
DQ3
DQ11 DQ19 DQ27
A4
DQ4
DQ12 DQ20 DQ28
A5
DQ5
DQ13 DQ21 DQ29
A6
DQ6
DQ14 DQ22 DQ30
A7
DQ7
DQ15 DQ23 DQ31
A9
DBI0# DBI1# DBI2# DBI3#
BA3
EDC0 EDC1 EDC2 EDC3
BA2
BA1
BA0
0
1
2
3
4
0
0
0
0
1
0
0
1
Burst Position
2
3
4
0
0
1
1
1
0
0
1
0
5
6
7
5
1
0
1
6
1
1
0
7
1
1
1
LDFF FIFO Load Pulse
Figure 18: LDFF Command Address to DQ/DBI#/EDC Mapping
All burst addresses 0 to 7 must be loaded; LDFF commands to burst address 0 to 6 may be issued in ran‐
dom order; the LDFF command to burst address 7 (LDFF7) must be the last of 8 consecutive LDFF com‐
mands, as it effectively loads the data into the FIFO and results in a FIFO pointer increment. Consecutive LDFF commands have to be spaced by at least tLTLTR, and at least tLTL7TR cycles are required after each LDFF command to burst address 7.
LDFF pattern may efficiently be replicated to the next FIFO stages by issuing consecutive LDFF commands to burst address 7 (with identical data pattern). The data pattern in the scratch memory for LDFF will be available until the first RDTR command.
The DQ/DBI# output buffers remain in ODT state during LDFF.
An amount of LDFF commands to burst address 7 greater than the FIFO depth is allowed and shall result in a looping of the FIFO’s data input.
The total number of LDFF commands to burst address 7 modulo FIFO depth must equal the total number of RDTR commands modulo FIFO depth when used in conjunction with RDTR. No READ or WRITE com‐
mands are allowed between LDFF and RDTR.
The EDC hold pattern is driven on the EDC pins during LDFF (provided RDQS mode is not enabled).
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
RDTR Command
A RDTR burst is initiated with a RDTR command as shown in Figure 19. No bank or column addresses are used as the data is read from the internal READ FIFO, not the array. The length of the burst initiated with a RDTR command is eight. There is no interruption nor truncation of RDTR bursts.
RDTR
CK#
CK
CKE#
LOW
CS#
RAS#
CAS#
WE#
A9 (A12)
A1
A8,A10,A11
A7,A0,A6
0,1,1
BA0‐BA3
A2‐A5
Figure 19: RDTR Command
A RDTR command may only be issued when a bank is open or a refresh is in progress and bit A2 in MR5 is set to 0 to allow training during refresh.
RDBI and RDCRC must be enabled to read the DBI and EDC bits, respectively, with the RDTR command. If not set, the DBI# pins will remain in ODT state, and the EDC pins will drive the EDC hold pattern.
In case of the RDQS mode, the EDC pin functions like with a normal READ in this mode. The DBI# pin behaves like a DQ, and no encoding with DBI is performed.
An amount of RDTR commands greater than the FIFO depth is allowed and shall result in a looping of the FIFO’s data output. The FIFO depth from which the RDTR data is read must be a number between 4‐6 and must be specified by the DRAM vendor. The FIFO depth is read via the Vendor ID function.
During RDTR bursts, the first valid data‐out element will be available after the CAS latency (CL). The latency is the same as for READ. The data on the EDC pins comes with additional CRC latency (tCRCRD) after the CL.
Upon completion of a burst, assuming no other RDTR command has been initiated, all DQ and DBI# pins will drive a value of ʹ1ʹ and the ODT will be enabled at a maximum of 1 tCK later. The drive value and ter‐
mination value may be different due to separately defined calibration offsets. If the ODT is disabled, the pins will drive Hi‐Z.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
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H5GQ1H24AFR
Data from any RDTR burst may be concatenated with data from a subsequent RDTR command. A contin‐
uous flow of data can be maintained. The first data element from the new burst follows the last element of a completed burst. The new RDTR command should be issued after the first RDTR command according to the tCCDS timing.
A WRTR can be issued any time after a RDTR command as long as the bus turn around time tRTW is met.
The total number of RDTR commands modulo FIFO depth must be equal to total number of WRTR com‐
mands modulo FIFO depth when used in conjunction with WRTR. No READ or WRITE commands are allowed between WRTR and RDTR.
The total number of RDTR commands modulo FIFO depth must be equal to the total number of LDFF commands to burst position 7 modulo FIFO depth when used in conjunction with LDFF. No READ or WRITE commands are allowed between LDFF and RDTR.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
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H5GQ1H24AFR
3.5. WRITE TRAINING
Write training allows the memory controller to find the data‐eye center (symbol training) and burst frame location (frame training) for each high‐speed input of the GDDR5 SGRAM. Each pin (DQ0‐DQ31, DBI0#‐
DBI3#) can be individually trained during this sequence.
For Write Training the following conditions must be true:
• at least one bank is active, or an auto refresh must be in progress and bit A2 in Mode Register 5 (MR5) is set to 0 to allow training during auto refresh (to disable this special REF enabling of the WCK clock tree an ACT command must be issued, or the device must be set into power‐down or self refresh mode)
• the PLL must be locked, if enabled.
• WCK2CK training should be complete
• Read training should be complete
• RDBI and WDBI must be enabled prior to and during Write Training if the training shall include the DBI# pins. RDCRC and WRCRC must be enabled prior to and during Write Training if the training shall include the EDC pins.
The following commands are associated with Write Training:
• WRTR to write a burst of data directly into the Read FIFO;
• RDTR to read a burst of data directly out of the Read FIFO.
Neither WRTR nor RDTR access the memory core. No MRS is required to enter Write Training.
Figure 16 shows an example of the internal data paths used with WRTR and RDTR. Figure 21 shows a typ‐
ical Write training command sequence using WRTR and RDTR. Table 14 lists AC timing parameters asso‐
ciated with WRITE Training.
Table 14 WRTR and RDTR Timings
VALUES
PARAMETER
SYMBOL
UNIT
MIN
MAX
ACTIVE to WRTR command delay
tRCDWTR
10
–
ns
ACTIVE to RDTR command delay
tRCDRTR
10
–
ns
REFRESH to RDTR or WRTR command delay
tREFTR
10
–
ns
RD/WR bank A to RD/WR bank B command delay different bank groups
tCCDS
2
–
tCK
WRTR to RDTR command delay
tWTRTR
WL‐tWLmin
–
tCK
WRITE to WRTR command delay
tWRWTR
WL+CRCWL+2
–
tCK
tRTW
1
–
ns
READ or RDTR to WRITE or WRTR command delay
NOTES
a
b
a.
tCCDS is either for gapless consecutive READ or RDTR (any combination), gapless consecutive WRITE, or gapless consecutive
WRTR commands.
b.
tRTW is not a device limit but determined by the system bus turnaround time. The difference between tWCK2DQO and tWCK2DQI shall be considered in the calculation of the bus turnaround time.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
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H5GQ1H24AFR
WRTR Command
A WRTR burst is initiated with a WRTR command as shown in Figure 20. No bank or column addresses are used as the data is written to the internal READ FIFO, not the array. The length of the burst initiated with a WRTR command is eight. There is no interruption nor truncation of WRTR bursts.
WRTR
CK#
CK
CKE#
LOW
CS#
RAS#
CAS#
WE#
A9 (A12)
A1
A8,A10,A11
A7,A0,A6
0,1,1
BA0‐BA3
A2‐A5
Figure 20: WRTR Command
A WRTR command may only be issued when a bank is open or a refresh is in progress and bit A2 in MR5 is set to 0 to allow training during refresh.
WDBI and WRCRC must be enabled to write the DBI and EDC bits, respectively, with the WRTR com‐
mand. If WDBI is not set, a ‘1’ will be written to the DBI FIFO, and a ‘1’ will be assumed for the DBI# input in the CRC calculation. In contrast to a normal WRITE, no CRC is returned by the WRTR command and the EDC pins will drive the EDC hold pattern. In case of the RDQS mode, the EDC pin functions like with a normal READ in this mode. Please note that RDCRC must be enabled to read the calculated CRC data with the RDTR command.
An amount of WRTR commands equal to the FIFO depth is required to fully load the FIFO; any number of WRTR commands greater than the FIFO depth is allowed and shall result in a looping of the FIFO’s data input. The FIFO depth to which the WRTR data is written must be 6. The FIFO depth is read via the Ven‐
dor ID function.
During WRTR bursts, the first valid data‐in element must be available at the input latch after the Write Latency (WL). The Write Latency is the same as for WRITE.
Upon completion of a burst, assuming no other WRTR data is expected on the bus the GDDR5 SGRAM DQ and DBI# pins will be driven according to the ODT state. Any additional input data will be ignored.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
Data from any WRTR burst may be concatenated with data from a subsequent WRTR command. A contin‐
uous flow of data can be maintained. The first data element from the new burst follows the last element of a completed burst. The new WRTR command should be issued after the previous WRTR command according to the tCCDS timing.
A RDTR can be issued any time after a WRTR command as long as the internal bus turn around time tRTWTR is met.
The total number of WRTR commands modulo FIFO depth must equal the total number of RDTR com‐
mands modulo FIFO depth when used in conjunction with RDTR. No READ or WRITE commands are allowed between WRTR and RDTR.
T0
T1
T2
T3
T4
T5
Ta
Ta+1
Ta+2
Ta+3
Ta+4
WRTR
NOP
WRTR
NOP
NOP
NOP
RDTR
NOP
RDTR
NOP
NOP
CK#
CK
CMD
ADDR
WLmrs
WLmrs
tWTRTR
CLmrs
CRCRL
CLmrs
CRCRL
WCK
EDC Hold EDC Hold EDC Hold EDC Hold EDC Hold EDC Hold EDC Hold EDC Hold
D0
D1
D2
D3
D4
D5
D6
D7
D0
D1
EDC
D0
D1
D2
D3
D4
D5
D6
D7
D0
D1
D2
D3
D4
D5
DQ
D0
D1
D2
D3
D4
D5
D6
D7
D0
D1
D2
D3
D4
D5
D6
D7
WCK#
Donʹt Care
1. WLmrs, CLmrs and CRCRL set to 1 for ease of illustration; check Mode Register definition for supported settings
2. WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
Figure 21: Write Training using WRTR and RDTR Commands
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
4. MODE REGISTERS
GDDR5 specifies 10 Mode Registers to define the specific mode of operation. MR0 to MR7 and MR15 are defined as shown in
the overview in Figure 22. MR8 to MR13 are not defined and may be used by DRAM vendors for vendor specific features. Reprogramming the Mode Registers will not alter the contents of the memory array.
All Mode Registers are programmed via the MODE REGISTER SET (MRS) command and will retain the stored information until
they are reprogrammed or the device loses power. Mode Registers must be loaded when all banks are idle and no bursts are in
progress, and the controller must wait the specified time tMRD before initiating any subsequent operation. Violating either of these
requirements will result in unspecified operation.
No default states are defined for Mode Registers except when otherwise noted. Users therefore must fully initialize all Mode Registers to the desired values e.g. upon power-up.
Reserved states should not be used, as unknown operation or incompatibility with future versions may result. RFU bits are
reserved for future use and must be programmed to 0. Bit A12 is not used for any mode register programming as this address input
is not defined for 1G density.
BA3 BA2 BA1 BA0
A12
A11
A10
A9
A8
A7
A6
TM
CAS Latency (CLmrs)
MR0
0
0
0
0
0
MR1
0
0
0
1
0
PLL WDBI RDBI PLL
Reset ABI
MR2
0
0
1
0
0
ADR/CMD Data and WCK Termination Offset Termination Offset
MR3
0
0
1
1
0
MR4
0
1
0
0
0
MR5
0
1
0
1
0
MR6
0
1
1
0
0
MR7
0
1
1
1
0
MR14
MR15
Write Recovery (WR)
Bank Groups
WCK Termination
EDC WR RD 13Inv CRC CRC
A4
A3
OCD Pullup Driver Offset
CRC Read CRC Write Latency Latency
(CRCWL)
(CRCRL)
A0
Write Latency (WLmrs)
Driver Strength
OCD Pulldown Driver Offset
EDC Hold Pattern
PLL Bandwidth (PLLBW)
VREFD Offset
Lower 2 bytes
RFU
A1
RDQS WCK WCK WCK
Mode 2CK 23Inv 01Inv Self Refresh
Info
VREFD Offset
Upper 2 bytes
A2
Cal ADR/CMD
Data Upd Termination Termination
RFU
DCC
A5
VREFD
LP3
LP2
RFU
Auto VREFD WCK VREFD Merge PIN
Half Temp DQ Auto LF VREFD Sense PreA Sync Mode
RFU
RFU
1
1
1
1
0
MRE MRE
RFU ADT MF1 MF0
X
X
X
X
X
X
X
X
Figure 22. Mode Registers Overview
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
41
H5GQ1H24AFR
4.1. MODE REGISTER 0 (MR0)
Mode Register 0 controls operating modes such as Write Latency, CAS latency, Write Recovery and Test
Mode as shown in Figure 23.
The register is programmed via the MODE REGISTER SET (MRS) command with BA0=0, BA1=0, BA2=0
and BA3=0.
BA3
BA2
BA1
BA0
A12
0
0
0
0
0
A11
A10
A9
A8
Write Recovery (WR)
0
0
0
0
4
0
0
0
1
A11
A10
A9
A8
A7
Write Recovery (WR)
5
A6
TM
A7
A5
A4
A3
A2
0
Normal
1
Test Mode
A0
Write Latency (WLmrs)
CAS Latency (CLmrs)
Test Mode
A1
A2
A1
A0
Write Latency (WLmrs)
0
0
0
RFU
0
0
1
1
1
0
2
0
0
1
0
6
0
0
0
1
1
7
0
1
1
3
0
1
0
0
8
1
0
0
4
0
1
0
1
9
1
0
1
5
0
1
1
0
10
1
1
0
6
0
1
1
1
11
1
1
1
7
1
0
0
0
12
1
0
0
1
13
1
0
1
0
14
1
0
1
1
15
1
1
0
0
16
1
1
0
1
17
1
1
1
0
18
1
1
1
1
19
A6
A5
A4
A3
CAS Latency (CLmrs)
0
0
0
0
5 0
0
0
1
6
0
0
1
0
7
0
0
1
1
8
0
1
0
0
9
0
1
0
1
10
0
1
1
0
11
0
1
1
1
12
1
0
0
0
13
1
0
0
1
14
1
0
1
0
15
1
0
1
1
16
1
1
0
0
17
1
1
0
1
18
1
1
1
0
19
1
1
1
1
20
Figure 23. Mode Register 0 (MR0) Definition
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
WRITE Latency (WLmrs)
The WRITE latency (WLmrs) is the delay in clock cycles used in the calculation of the total WRITE latency
(WL) between the registration of a WRITE command and the availability of the first piece of input data.
DRAM vendor specifications should be checked for value(s) of WLmrs supported. The full WRITE latency
definition can be found in the section entitled OPERATION.
When the WRITE latencies are set to small values (i.e. 1,2,... clocks), the input receivers never turn off, in
turn, raising the operating power. When the WRITE latency is set to higher values (i.e. .. 6, 7 clocks) the input
receivers turn on when the WRITE command is registered. Refer to vendor datasheets for value(s) of
WLmrs where the input receivers are always on or only turn on when the WRITE command is registered
Allowable Operating Frequency (Gbps)
Speed
WL7
WL6
WL5
WL4
WL3
WL2
WL1
6.0Gbps
5.5Gbps
5.0Gbps
4.5Gbps
4.0Gbps
CAS Latency (CLmrs)
The CAS latency (CLmrs) is the delay in clock cycles used in the calculation of the total READ latency
(CL) between the registration of a READ command and the availability of the first piece of output data. By default CLmrs is specified by bits A3‐A6, defining a CLmrs range of 5 to 20 tCK.
DRAM vendor specifications should be checked for value(s) of CLmrs supported. The full READ latency
definition can be found in the section entitled OPERATION
Speed
6.0Gbps
5.5Gbps
5.0Gbps
4.5Gbps
4.0Gbps
RDBI
ON/OFF
Allowable Operating Frequency (Gbps)
CL20
CL19
CL18
CL17
CL16
CL15
CL14
CL13
CL12
OFF
ON
OFF
ON
OFF
ON
OFF
ON
OFF
ON
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
WRITE Recovery (WR)
The programmed WR value is used for the auto precharge feature along with tRP to determine tDAL. The
WR register bits are not a required function and may be implemented at the discretion of the DRAM
manufacturer.
WR must be programmed with a value greater than or equal to RU{tWR/tCK}, where RU stands for round
up, tWR is the analog value from the vendor datasheet and tCK is the operating clock cycle time.
By default WR is specified by bits A8‐A11, defining a WR range of 4 to 19 tCK. Test Mode
The normal operating mode is selected by issuing a MODE REGISTER SET command with bit A7 set to
’0’, and bits A0‐A6 and A8‐A11 set to the desired values. Programming bit A7 to ‘1’ places the device into a
test mode that is only to be used by the DRAM manufacturer. No functional operation is specified with test
mode enabled.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
4.2. MODE REGISTER 1 (MR1)
Mode Register 1 controls functions like drive strength, data termination, address/command termination,
Read DBI, Write DBI, ABI, control of calibration updates and PLL as shown in Figure 24.
The register is programmed via the MODE REGISTER SET (MRS) command with BA0=1, BA1=0, BA2=0
and BA3=0. Bits A0‐A1, A4‐A6 and A10 of this register are initialized with’0’s. BA3 BA2 BA1 BA0
0
0
0
1
A12
0
A11
A10
A9
A8
A7
A6
PLL ABI WDBI RDBI PLL
Reset
A5
A4
A3
A2
Cal ADR/CMD
Data Upd Termination Termination
A0
Driver Strength
A1
A0
Driver Strength
0
0
Auto Calibration On
PLL
0
1
RFU
0
Nominal (60/40)
1
RFU
A11
PLL Reset
0
No
0
Off
1
1
Yes
1
On
1
A7
A1
A10
ABI
A6
Calibration Update
A3
A2
Data Termination
0
On
0
On
0
0
Disabled
1
Off
1
Off
0
1
ZQ/2
1
0
ZQ
1
1
RFU
A9
Write DBI
A8
0
On
0
Read DBI
On
1
Off
1
Off
A5
A4
ADD/CMD Termination
0
0
CKE# value at Reset
0
1
ZQ/2
1
0
ZQ
1
1
Disabled
Figure 24. Mode Register 1 (MR1) Definition
Impedance Autocalibration of Output Buffer and Active Terminator
GDDR5 SGRAMs offer autocalibrating impedance output buffers and on‐die terminations. This enables a
user to match the driver impedance and terminations to the system within a given range. To adjust the
impedance, an external precision resistor is connected between the ZQ pin and VSSQ. A nominal resistor
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
45
H5GQ1H24AFR
value of 120 Ohms is equivalent to the 40 Ohms Pulldown and 60 Ohms Pullup nominal impedances of
GDDR5 SGRAMs. RESET#, CK and CK# are not internally terminated. CK and CK# shall be terminated on
the system using external 1% resistors to VDDQ.
The output driver and on‐die termination impedances are updated during all REFRESH commands to
compensate for variations in supply voltage and temperature. The impedance updates are transparent to
the system.
Driver Strength
Bits A0 and A1 define the driver strength. The Auto Calibration setting enables the Auto‐Calibration
functionality for the Pulldown, Pullup and Termination over process, temperature and voltage changes.
The design target for the factory setting is 40 Ohm Pulldown, 60 Ohm Pullup driver strength with nominal
process, voltage and temperature conditions.
The nominal option enables the factory setting for the Pulldown, Pullup driver strength and termination.
With this option enabled, driver strength and termination are expected to change with process, voltage
and temperature. AC timings are only guaranteed with Auto Calibration.
Data Termination
Bits A2 and A3 define the data termination value for the on‐die termination (ODT) for the DQ and DBI#
pins in combination with the driver strength setting.
The termination can be set to a value of ZQ/2 which is intended for a single loaded system, or ZQ which
is intended for a weaker termination used in a lower power or frequency applications. The data
termination may also be turned off.
ADR/CMD Termination
Bits A4 and A5 define the address/command termination. The default setting (’00’) provides that the
address/command termination is determined by latching CKE# on the rising edge of RESET#. The address/command termination can also be set to a value of ZQ/2 which is intended for a single
loaded system, or ZQ which is intended for double loaded configurations with two devices sharing a
common address/command bus. The address/command termination may also be turned off.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
Calibration Update The Calibration Update setting enables the calibration value to be updated automatically by the auto
calibration engine. The function is enabled upon power‐up to reduce update induced jitter. The user may
decide to suppress updates from the auto calibration engine by disabling Calibration Update (A6=1). The calibration updates can occur with any REFRESH command. The update is not complete for a time
tKO after the latching of the REFRESH command. During this tKO time, only NOP or DESELECT
commands may be issued
PLL and PLL Reset
If a PLL is to be used, it must be enabled for normal operation by setting bit A7 to ’1’. A PLL reset is done by turning the PLL off then on, or by use of the PLL Reset bit A11. The PLL Reset bit
is self clearing meaning that it returns back to the value ‘0’ after the PLL reset function has been issued.
RDBI and WDBI
Bit A8 controls Data Bus Inversion (DBI) for READs (RDBI), and bit A9 controls Data Bus Inversion for
WRITEs (WDBI). For more details on DBI see READ and WRITE Data Bus Inversion (DBI) in the section
entitled OPERATION.
ABI
Address Bus Inversion (ABI) is selected independently from DBI using bit A10. When enabled any data
sent over the address bus (whether opcode, addresses, LDFF data or DM) is inverted or not inverted based
on the state of ABI# signal. For more details on ABI see Address Bus Inversion (ABI) in the section entitled
OPERATION.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
47
H5GQ1H24AFR
4.3. MODE REGISTER 2 (MR2)
Mode Register 2 defines the output driver (OCD) and termination offsets as shown in Figure 25.
Mode Register 2 is programmed via the MODE REGISTER SET (MRS) command with BA0=0, BA1=1,
BA2=0 and BA3=0.
BA3 BA2 BA1 BA0
0
0
1
A12
0
0
A11
A10
A9
A8
A7
A6
A5
ADR/CMD Data and WCK Termination Offset Termination Offset
A4
A3
OCD Pullup Driver Offset
A2
A1
OCD Pulldown Driver Offset
Data and WCK Termination Offset
A2
A1
A0
0
0
0
0
0
0
1
+1
0
0
1
+1
1
0
+2
0
1
0
+2
1
1
+3
0
1
1
+3
1
0
0
‐4
1
0
0
‐4
1
0
1
‐3
1
0
1
‐3
1
1
0
‐2
1
1
0
‐2
1
1
1
‐1
1
1
1
‐1
A8
A7
A6
0
0
0
0
0
0
ADR/CMD Termination Offset
A5
A4
A3
0
0
0
0
0
0
1
+1
0
0
1
+1
1
0
+2
0
1
0
+2
1
1
+3
0
1
1
+3
1
0
0
‐4
1
0
0
‐4
1
0
1
‐3
1
0
1
‐3
1
1
0
‐2
1
1
0
‐2
1
1
1
‐1
1
1
1
‐1
A11
A10
A9
0
0
0
0
0
0
A0
OCD Pulldown Driver Offset
OCD Pullup Driver Offset
Figure 25. Mode Register 2 (MR2) Definition
Impedance Offsets
The driver and termination impedances may be offset individually for PD driver, PU driver, DQ/DBI#/
WCK termination and address/command termination. The offset impedance step values may be non‐
linear and will vary across PVT. With negative offset steps the drive strengths will be decreased and Ron
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
48
H5GQ1H24AFR
will be increased. With positive offset steps the drive strengths will be increased and Ron will be
decreased. With negative offset steps the termin‐ation value will be increased. With positive offset steps
the termination value will be decreased.
IV curves and AC timings are only guaranteed with zero offset.
Offset
PU Driver
ZQ
120 Ohms
Calibration Engine
Autocalibrated
Impedance
Offset
PD Driver
Pullup Impedance
Pulldown
Impedance
Auto/Fixed
VSSQ
nominal (60/40)
Fixed Impedance
Note: sum of offset + auto‐
calibrated impedance cannot exceed maximum / minimum available impedance steps
Offset
ADD/CMD Termination
ADD/CMD Termination Impedance
Offset
DQ/DBI#/WCK Termination DQ/DBI#/WCK Termination
Impedance
Figure 26. Impedance Offsets
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
4.4. MODE REGISTER 3 (MR3)
Mode Register 3 controls functions including Bank Groups, WCK termination, self refresh, RDQS mode,
DRAM Info and WCK2CK training as shown in Figure 27.
Mode Register 3 is programmed via the MODE REGISTER SET (MRS) command with BA0=1, BA1=1,
BA2=0 and BA3=0.
BA3 BA2 BA1 BA0
A10
Bank Groups
A8
A7
WCK Termination
A6
A4
A3
A2
A1
A0
RDQS WCK WCK WCK
Mode 2CK 23Inv 01Inv Self Refresh
A10
Bank Groups
A1
A0
Self Refresh
X
off / tCCDL = 2 tCK
0
0
32 ms
on / tCCDL = 3 tCK
0
1
16ms
1
0
8ms
1
1
RFU
A9
A8
WCK Termination
0
0
Disabled
0
1
A5
ZQ/2
1
0
ZQ
1
1
RFU
Info
A5
A11
X
0
A9
0
1
1
A11
0
0
1
A12
A7
A6
DRAM Info
0
0
off
RDQS Mode
0
Off
1
On
A2
WCK01 Invert
0
Off
1
On
A3
WCK23 Invert
0
Off
1
On
0
1
Vendor ID
A4
WCK2CK Training
1
0
Temperature Readout 0
Off
1
1
RFU
1
On
Figure 27. Mode Register 3 (MR3) Definition
Self Refresh
The refresh interval in self refresh mode may be set to 32ms, 16ms and 8ms. WCK2CK
Bit A4 (WCK2CK) enables and disables the WCK2CK alignment training. For details on this training
sequence, see the section on TRAINING.
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
WCK01 / WCK23 Inversion
Bits A2 and A3 control whether the internal phase of the WCK01 and WCK23 clock inputs after internal
divide‐by‐2 shall be inverted, corresponding to a 2 U.I. phase shift. The bits are used in conjunction with
WCK2CK training mode.
RDQS Mode
Bit A5 enables the RDQS mode of the GDDR5 SGRAM. In this mode the EDC pins will act as a READ
strobe (RDQS). No CRC is supported in RDQS mode, and all related bits in MR4 will be ignored. A
detailed description of the RDQS mode can be found in the section entitled OPERATION.
DRAM Info
Bits A6 and A7 enable the DRAM Info mode which is provided to output the Vendor ID, or the current
junction temperature.
The Vendor ID identifies the manufacturer of the GDDR5 SGRAM, and provides the die revision,
memory density and FIFO depth.
The Temperature Readout provides the SGRAM’s junction temperature. The on‐chip temperature sensor
is enabled in advance by bit A6 in MR7. WCK Termination
Bits A8 and A9 define the termination value for the on‐die termination (ODT) for the WCK01, WCK01#,
WCK23 and WCK23# pins in combination with the driver strength setting.
The termination can be set to a value of ZQ/2 which is intended for a single loaded system, or ZQ which
is intended for double load configurations with two devices sharing the WCK clocks. The WCK
termination may also be turned off.
Bank Groups
Bit A11 enables the bank groups feature. With A11 set to ‘1’, the bank groups feature is enabled and
tCCDL is 3tCK.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
4.5. MODE REGISTER 4 (MR4)
Mode Register 4 defines the Error Detection Code (EDC) features of GDDR5 SGRAMs as shown in
Figure 28.
The register is programmed via the MODE REGISTER SET (MRS) command with BA0=0, BA1=0, BA2=1
and BA3=0. Bits A0‐A3 (EDC Hold Pattern) of this register are initialized with ’1111’.
BA3 BA2 BA1 BA0
0
1
0
A12
0
A11
A10
A9
EDC WR RD 13Inv CRC CRC
0
A11
EDC Hold Pattern Invert for EDC1 + EDC3
0
EDC hold pattern not inverted
1
EDC hold pattern inverted
A8
A7
A6
A5
A4
CRC Read Latency CRC Write Latency (CRCWL)
(CRCRL)
A3
A2
A1
A0
EDC Hold Pattern
A3
A2
A1
A0
EDC Hold Pattern
0
0
0
0
Pattern
1
1
1
1
Pattern
...
Burst Burst Burst Burst
Pos 3 Pos 2 Pos 1 Pos 0
A10
WR CRC
A9
RD CRC
0
On
0
On
1
Off
1
Off
A6
A5
A4
CRC Write Latency (CRCWL)
0
0
0
N/A
0
0
1
8
0
1
0
9
A8
A7
CRC Read Latency (CRCRL)
0
1
1
10
0
0
0
1
0
0
11
0
1
1 1
0
1
12
1
0
2
1
1
0
13
1
1
3
1
1
1
14
Figure 28. Mode Register 4 (MR4) Definition
EDC Hold pattern / EDC13 Invert
The 4‐bit EDC hold pattern is considered a background pattern transmitted on the EDC pins. The register
is initialized with all ’1’s. The pattern is shifted from right to left and repeated with every clock cycle. The
output timing is the same as of a READ burst. CRC bursts calculated from WRITEs or READs will replace the EDC hold pattern for the duration of
those bursts, provided CRC is enabled for those bursts.
With each MRS command to MR4 that changes bits A0‐A3 or A9‐A11, the EDC hold pattern will be
undefined for tMRD.
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
52
H5GQ1H24AFR
The EDC hold pattern will not be transmitted when the device is in address training mode, in WCK2CK
training mode, in RDQS mode, in self refresh mode, in reset state, in power‐down state with the LP2 bit
set, or in scan mode.
With register bit A11 set High, EDC1 and EDC3 will transmit the inverted EDC hold pattern, resulting in
a pseudo‐differential pattern. Please note that this function is not available in x16 configuration. Bit A11 is
ignored for READ, WRITE and RDTR CRC bursts and the clock phase information in WCK2CK training
mode.
CRC Write Latency (CRCWL)
The value of the CRC write latency is loaded into register bits A4‐A6. If the DRAM vendor does not
support the Mode Register definition of CRCWL, the Mode Register settings will be ignored. In that case
the valid fixed latency is given with the DRAM vendor’s specification. The user must set the CRCWL
Mode Register bits.
Speed
Allowable Operating Frequency (Gbps)
CRCWL14
CRCWL13
CRCWL12
CRCWL11
CRCWL10
CRCWL9
CRCWL8
6.0Gbps
5.5Gbps
5.0Gbps
4.5Gbps
4.0Gbps
CRC Read Latency (CRCRL)
The value of the CRC read latency is loaded into register bits A7‐A8. If the DRAM vendor does not support
the Mode Register definition of CRCRL, the Mode Register settings will be ignored. In that case the valid
fixed latency is given with the DRAM vendor’s specification. The user must set the CRCRL Mode Register
bits.
Speed
6.0Gbps
5.5Gbps
5.0Gbps
4.5Gbps
4.0Gbps
RDBI
ON/OFF
Allowable Operating Frequency (Gbps)
CRCRL3
CRCRL2
CRCRL1
CRCRL0
OFF
ON
OFF
ON
OFF
ON
OFF
ON
OFF
ON
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
Read CRC
Bit A9 controls the CRC calculation for READ bursts. When enabled, the calculated CRC pattern will be
transmitted on the EDC pins with the latency as programmed in the CRCRL field of this register. With
Read CRC being off, no CRC will be calculated for READ bursts, and the EDC hold pattern will be
transmitted instead.
Write CRC
Bit A10 controls the CRC calculation for WRITE bursts. When enabled, the calculated CRC pattern will be
transmitted on the EDC pins with the latency as programmed in the CRCWL field of this register. With
Write CRC being off, no CRC will be calculated for WRITE bursts, and the EDC hold pattern will be trans‐
mitted instead.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
4.6. MODE REGISTER 5 (MR5)
Mode Register 5 defines digital RAS, PLL band‐width and low power modes as shown in Figure 29.
The register is programmed via the MODE REGISTER SET (MRS) command with BA0=1, BA1=0, BA2=1
and BA3=0.
BA3 BA2 BA1 BA0
0
1
A5
0
A4
1
A3
A12
A11
A10
A9
0
A8
A7
A6
RFU
‐3dB [MHz]
BW3dBLL
Peak [MHz]
BWPKLL
Peak [dB]
PKLL
A5
A4
A3
A2
A1
A0
PLL Bandwidth
LP3
LP2
RFU
0
0
0
13
2
＜ 1.2
0
0
1
18
4
＜ 1.1
0
1
0
22
5
＜ 1.1
0
1
1
28
7
＜ 1.2
1
0
0
36
10
＜ 1.2
1
0
1
44
13
＜ 1.2
A2
LP3
1
1
0
54
15
＜ 1.7
0
Off
1
1
1
69
20
＜ 1.5
1
On
A1
LP2
0
Off
1
On
Note 1) PLL BW characteristics is extracted at 4Gbps
Note 2) PLL BW is linearly proportional to the data rate
Figure 29. Mode Register 5 (MR5) Definition
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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Low Power Modes (LP2, LP3)
Bits A1‐A2 control several low power modes of the GDDR5 SGRAM. The modes are independent of each
other.
When bit A1 (LP2) is set, the WCK receivers may be turned off during power‐down.
When bit A2 (LP3) is set, RDTR, WRTR and LDFF commands are not allowed while a REF command is
being executed.
PLL Bandwidth
The PLL bandwidth may optionally be configured to match system characteristics. Each setting defines a
unique combination of ‐3dB corner frequency, peaking frequency and peaking magnitude. This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
4.7. MODE REGISTER 6 (MR6)
Mode Register 6 controls the WCK2CK alignment point and defines VREFD related features such as
source, level, offsets, VREFD Merge and VREFD Auto Calibration mode, as shown in Figure 30.
The register is programmed via the MODE REGISTER SET (MRS) command with BA0=0, BA1=1, BA2=1
and BA3=0.
BA3 BA2 BA1 BA0
A12
A11
A10
A9
A8
VREFD Offset
Bytes in rows A‐F
0
A7
A6
A5
A4
VREFD Offset
Bytes in rows M‐U
A3
A2
A1
A0
Auto VREFD WCK VREFD VREFD Merge PIN
0
1
1
0
A11
A10
A9
A8
VREFD Offset
A7
A6
A5
A4
VREFD Offset
A0
WCK2CK Alignment Pt.
0
0
0
0
0 / default
0
0
0
0
0 / default
0
PD inside DRAM
0
0
0
1
+1
0
0
0
1
+1
1
PD at pins
0
0
1
0
+2
0
0
1
0
+2
0
0
1
1
+3
0
0
1
1
+3
0
1
0
0
+4
0
1
0
0
+4
0
1
0
1
+5
0
1
0
1
+5
A1
VREFD Merge
0
1
1
0
+6
0
1
1
0
+6
0
Off
0
1
1
1
+7
0
1
1
1
+7
1
On
1
0
0
0
0 / Auto (opt.)
1
0
0
0
0 / Auto (opt.)
1
0
0
1
‐7
1
0
0
1
‐7
1
0
1
0
‐6
1
0
1
0
‐6
1
0
1
1
‐5
1
0
1
1
‐5
1
1
0
0
‐4
1
1
0
0
‐4
A3
VREFD
1
1
0
1
‐3
1
1
0
1
‐3
0
external VREFD pins
1
1
1
0
‐2
1
1
1
0
‐2
1
internally generated
1
1
1
1
‐1
1
1
1
1
‐1
Figure 30. Mode Register 6 (MR6) Definition
WCK2CK Alignment Point (WCKPIN)
Bit A0 defines the position of the alignment point between CK and WCK. When set to ‘0‘, the alignment
point will be at the phase detector inside the GDDR5 SGRAM. When set to ‘1‘, the alignment point will be
at the CK and WCK pins. Input Reference Voltage for DQ and DBI# Pins
GDDR5 SGRAMs offer multiple options for the input reference voltage (Vref) for the DQ and DBI# pins,
as shown in Figure 31. This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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Separate Vref circuits are associated with the bytes in rows A to F and the bytes in rows M to U, with
separate VREFD pins for the required external Vref.
The only mandatory mode is that Vref will be supplied externally at the VREFD pins. This mode is
configured with bits A1‐A3 and bit A7 in MR7 all set to ’0’. VREFD Offsets
0.7*VDDQ (opt.)
+
0.5*VDDQ (opt.)
VREFD
VREFD
Merge
(opt.)
+
‐
Receiver
DQ/DBI#
+
Figure 31. VREFD Options
VREFD Merge
The VREFD Merge mode is enabled when bit A1 is set to’1’. The externally supplied VFRED and the
internally generated Vref will be merged, resulting in the average value of both. DRAM vendor
specifications should be checked for values of external resistors that may be connected to VREFD pins in
this VREF Merge mode.
Auto VREFD Training
When Auto is set for VREFD offsets, the internal Vref generator must be trained. Bit A2 enables this
training; the bit is self‐clearing, meaning that it returns back to the value ‘0’ after the training has
completed. Once the training mode is enabled, the GDDR5 SGRAM drives the EDC pins Low to indicate to the
controller that the training has started. The controller is now expected to send the specified PRBS pattern
to the GDDR5 SGRAM. Upon completion of the training, the GDDR5 SGRAM stops driving the EDC pins
Low, and the EDC pins will resume transmitting the EDC hold pattern.
But, it is not supported.
VREFD
Bit A3 selects between external and internal Vref. The bit is “Don’t Care” when VREF Merge mode is
selected.
VREFD Offsets and VREFD Auto Mode
It supports the capability to offset Vref independently for the upper 2 bytes and the lower 2 bytes. The
offset step values may be non‐linear and will vary across PVT. This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
The vendors may optionally support the offset capability to be applied to the external Vref (not shown in
Figure 31).
The optional Auto setting for VREFD enables the GDDR5 SGRAM to search for its own optimal internal
Vref. There is no offset from this internally determined value (see also Auto VREFD Training).
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
4.8. MODE REGISTER 7 (MR7)
Mode Register 7 controls features like PLL Standby, PLL Fast‐Lock, PLL Delay Compensation, Low
Frequency mode, Auto Synchronization, Data Preamble, Temperature Sensor operation, Half VREFD,
VDD Range and DCC as shown in Figure 32.
The register is programmed via the MODE REGISTER SET (MRS) command with BA0=1, BA1=1, BA2=1
and BA3=0.
BA3 BA2 BA1 BA0
1
1
A12
A11
0
1
0
A11
A10
DCC
0
0
no DCC /
DCC off or hold / opt.
0
1
DCC start 1
0
DCC reset l
1
1
RFU
A10
A9
DCC
A8
RFU
A7
A6
A5
A4
A3
A2
A1
Half Temp DQ Auto LF VREFD Sense PreA Sync Mode
A4
WCK2CK Auto Sync
0
Off
1
On
A0
RFU
A5
Data Preamble
A3
Low Frequency Mode
0
Off
0
Off
1
On
1
On
A7
Half VFRED
A6
Temperature Sensor
0
0.7 * VDDQ
0
Off
1
0.5 * VDDQ
1
On
Figure 32. Mode Register 7 (MR7) Definition
Low Frequency Mode
When Low Frequency Mode is enabled by bit A3, the power consumption of input receivers and clock
trees is reduced. The maximum operating frequency for this low frequency mode is given in the vendor‘s
datasheet. WCK2CK Auto Synchronization
GDDR5 SGRAMs support a WCK2CK automatic synchronization mode that eliminates the need for
WCK2CK training upon power‐down exit or for reducing WCK2CK training time at low frequency. This
mode is controlled by bit A4. For a detailed description see WCK2CK Auto Synchronization in the section
entitled WCK2CK Training.
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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Data Preamble
When enabled by bit A5, non‐gapless READ bursts will be preceded by a fixed data preamble on the DQ
and DBI# pins of 4 U.I. duration. The programmed READ latency does not change when the Data
Preamble is enabled. The pattern is not encoded with RDBI, however, if RDBI is disabled, the DBI# pins
will not toggle and drive a HIGH. Temperature Sensor
The on‐chip temperature sensor is enabled by bit A6.
A detailed description of the Temperature Sensor can be found in the VENDOR ID, TEMP SENSOR and
SCAN section.
Half VREFD
This mode allows users to adjust the Vref level in case the GDDR5 SGRAM is operated without
termination: when bit A7 is set to’1’, a Vref level of nominally 0.5 * VDDQ is expected at the VREFD pin or
being generated internally (see Figure 31).
Duty Cycle Correction (DCC)
Bits A10 and A11 control the operation of the duty cycle corrector (DCC). The DCC can be used to cancel
out a static duty cycle error on the WCK clocks. For more details see Duty Cycle Correction (DCC) in the
section entitled OPERATION. VREFD Selection Options Summary
The following table summarizes the complete set of VREFD selection options.
Table 15 VREFD Selection Options
MR6
MR7
A3
A7
Internal VREFD
Half VREFD
0
0
External
0
1
External
Description
1
0
Internal 0.7 * VDDQ
1
1
Internal 0.5 * VDDQ
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responsability for use of circuits described. No patent licenses are implied.
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4.9. MODE REGISTER 15 (MR15)
Mode Register 15 controls address training mode (ADT) and access to Mode Registers 0 to 14 (MRE) as
shown in Figure 33.
The register is programmed via the MODE REGISTER SET (MRS) command with BA0=1, BA1=1, BA2=1
and BA3=1.
Mode Register 15 is a special register that operates in SDR addressing mode. Increased setup and hold
times as for command inputs are assumed to ensure the MRS command to this register is successful while
address training (ADT) has not taken place and the integrity of DDR addresses may not be guaranteed.
This is indicated by setting bits A0‐A7 to Don’t Care (“X”) which are paired with the usable bits (A8‐A11)
and the Mode Register address (BA0‐BA3).
BA3 BA2 BA1 BA0
1
1
1
1
A12
0
A10 Address Training (ADT)
A11
A10
RFU ADT
A9
A9
A8
MRE MRE
MF1 MF0
A7
A6
A5
A4
A3
A2
A1
A0
X
X
X
X
X
X
X
X
MR0‐14 Enable MF=1
A8
MR0‐14 Enable MF=0
0
Off
0
Enabled
0
Enabled
1
On
1
Disabled
1
Disabled
Figure 33. Mode Register 15 (MR15) Definition
Address Training (ADT)
Address training mode is enabled and disabled with bit A10.
Mode Register 0‐14 Enable
When disabled by bit A8 (for SGRAMs configured to MF=0) or bit A9 (for SGRAMs configured to MF=1),
the GDDR5 SGRAM will ignore any MODE REGISTER SET command to Mode Registers 0 to 14. If
enabled, MODE REGISTER SET commands function as normal. MODE REGISTER SET commands to
Mode Register 15 (this register) are not affected and will always be executed.
This functional allows for individual configuration of two GDDR5 SGRAMS on a common address bus
without the use of a CS# pin.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
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5. OPERATION
5.1. COMMANDS
Table 16 Truth Table ‐ Commands
Operation
BA
A11
A10
A8
A6, A7,
A9, (A12)
CKE#
Symbol
Previous Current cycle
cycle
CS#
RAS# CAS# WE#
A0‐
A5
(A6)
Notes
DESELECT (NOP)
DES
L
X
H
X
X
X
X
X
X
X
X
X
1, 2, 8
NO OPERATION (NOP)
NOP
L
X
L
H
H
H
X
X
X
X
X
X
1, 2, 8
MODE REGISTER SET
MRS
L
L
L
L
L
L
MRA
Opcode
1, 2, 3
ACTIVE (Select bank & activate row)
ACT
L
L
L
L
H
H
BA
RA
1, 2, 4
READ (Select bank and column, & start burst)
RD
L
L
L
H
L
H
BA
L
L
L
X
CA
1, 2, 5, 9
READ with Autoprecharge
RDA
L
L
L
H
L
H
BA
L
L
H
X
CA
1, 2, 5
Load FIFO
LDFF
L
L
L
H
L
H
X
H
L
L
X
X
1, 2, 7
READ Training
RDTR
L
L
L
H
L
H
X
H
H
L
X
X
1, 2
WRITE without Mask (Select bank and column, & start burst)
WOM
L
L
L H
L
L
BA
L
L
L
X
CA
1, 2, 5
WRITE without Mask with Autoprecharge
WOMA
L
L
L
H
L
L
BA
L
L
H
X
CA
1, 2, 5
WSM
L
L
L
H
L
L
BA
L
H
L
X
CA
1, 2, 5
WRITE with single‐byte mask with Autoprecharge
WSMA
L
L
L
H
L
L
BA
L
H
H
X
CA
1, 2, 5
WRITE with double‐byte mask (WDM)
WDM
L
L
L
H
L
L
BA
H
L
L
X
CA
1, 2, 5
WRITE with double‐byte mask with Autoprecharge
WDMA
L
L
L
H
L
L
BA
H
L
H
X
CA
1, 2, 5
WRITE Training
WRTR
L
L
L
H
L
L
X
H
H
L
X
X
1, 2
PRE
L
L
L
L
H
L
BA
X
X
L
X
X
1, 2
WRITE with single‐byte mask
PRECHARGE (Deactivate row in bank or banks)
PREALL
L
L
L
L
H
L
X
X
X
H
X
X
1, 2
REFRESH
REF
L
L
L
L
L
H
X
X
X
X
X
X
1, 6
POWER DOWN ENTRY
PDE
L
H
POWER DOWN EXIT
PDX
H
L
PRECHARGE ALL
SELF REFRESH ENTRY
SRE
L
H
SELF REFRESH EXIT
SRX
H
L
H
X
X
X
X
X
X
X
X
X
1
L
H
H
H
X
X
X
X
X
X
1
H
X
X
X
X
X
X
X
X
X
1
L
H
H
H
L
L
L
H
X
X
X
X
X
X
1, 6
H
X
X
X
X
X
X
X
X
X
1
L
H
H
H
Notes:
1) H = Logic High Level; L = Logic Low Level; X = Don’t care: signal may be H or L, but not floating
2) Addresses shown are logical addresses; physical addresses are inverted when address bus inversion (ABI) is activated and ABI#=L
3) BA0‐BA3 provide the Mode Register address (MRA), A0‐A11 the opcode to be loaded
4) BA0‐BA3 provide the bank address (BA), A0‐A11 (A12) provide the row address (RA).
5) BA0‐BA3 provide the bank address, A0‐A5 (A6) provide the column address (CA); no sub‐word addressing within a burst of 8.
6) The command is Refresh when CKE#(n) = L and Self Refresh Entry when CKE#(n) = H.
7) BA0‐BA3 and CA are used to select burst location and data respectively
8) DESELECT and NOP are functionally interchangeable
9) In address training mode READ is decoded from the commands pins only with RAS# = H, CAS# = L, WE# = H
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
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H5GQ1H24AFR
Figure 34 and Figure 35 illustrate the timings associated with the Command and Address input as well as Data input.
tCK
tCH
tCL
CK#
CK
tCMDS tCMDH
tCMDPW
COMMAND
tAPW
tAPW
tAS tAH
tAS tAH
ADDRESS
Donʹt Care
Figure 34. Command and Address Input Timings
WCK#
WCK
tWCK2DQI
tWCK2DQI
tDIPW
tDIPW
tDIVW
tDIVW
DQ/DBI#
(1 Pin)
Figure 35. Data Input Timings
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H5GQ1H24AFR
5.2. DESELECT (NOP)
The DESELECT function (CS# HIGH) prevents new commands from being executed by the GDDR5 SGRAM. The GDDR5 SGRAM is effectively deselected. Operations already in progress are not affected.
5.3. NO OPERATION (NOP)
The NO OPERATION (NOP) command is used to instruct the selected GDDR5 SGRAM to perform a NOP (CS# LOW). This prevents unwanted commands from being registered during idle or wait states. Opera‐
tions already in progress are not affected.
5.4. MODE REGISTER SET
The MODE REGISTER SET command is used to load the Mode Registers of the GDDR5 SGRAM. The bank address inputs BA0‐BA3 select the Mode Register, and address puts A0‐A11(A12) determine the op‐code to be loaded. See MODE REGISTER for a register definition. The MODE REGISTER SET command can only be issued when all banks are idle and no bursts are in progress, and a subsequent executable com‐
mand cannot be issued until tMRD is met.
Mode Register Set
CK#
CK
CKE#
LOW
CS#
RAS#
CAS#
WE#
A8‐A11 (A12)
A0,A1,A6,A7
CO
A8,9,10,11, (12)
BA0‐BA3
A2‐A5
BA
BA0,1,2,3
CO
A0,1,6,7
CO
A2,3,4,5
RA = Row Address
DONʹT CARE
CO = Op‐code
BA = Bank Address
EN AP = Enable Auto Precharge
DIS AP = Disable Aut o Precharge
Figure 36. MRS Command
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responsability for use of circuits described. No patent licenses are implied.
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H5GQ1H24AFR
CK#
CK
CMD
NOP
PRE
ALL
NOP
MRS
Old Setting
NOP
A.C.
NOP
tMRD
tRP
Updating Setting
New Setting
A.C. = any command allowed in bank idle state
Figure 37. Mode Register Set Timings
5.5. ACTIVATION
Before any READ or WRITE commands can be issued to a bank in the GDDR5 SGRAM, a row in that bank must be “opened”. This is accomplished by the ACTIVE command (see Figure 38): BA0 ‐BA3 select the bank, and A0‐A11 (A12) select the row to be activated. Once a row is open, a READ or WRITE command could be issued to that row, subject to the tRCD specification. A subsequent ACTIVE command to another row in the same bank can only be issued after the previous row has been closed (precharged). The minimum time interval between two successive ACTIVE com‐
mands on the same bank is defined by tRC. A minimum time, tRAS, must have elapsed between opening and closing a row.
A subsequent ACTIVE command to another bank can be issued while the first bank is being accessed, which results in a reduction of total row‐access overhead. The minimum time interval between two suc‐
cessive ACTIVE commands on different banks to different bank groups is defined by tRRDS. With bank groups enabled, the minimum time interval between two successive ACTIVE commands to different banks in the same bank group is defined by tRRDL. In all other cases the interval is defined by tRRDS. <Link>Figure shows the tRCD and tRRD definition.
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H5GQ1H24AFR
The row remains active until a PRECHARGE command (or READ or WRITE command with Auto Pre‐
charge) is issued to the bank.
Row Activation
CK#
CK
CKE#
LOW
CS#
RAS#
CAS#
WE#
A8‐A11 (A12)
A0, A1,A6,A7
RA
RA
A8,9,10,11, (12)
BA0‐BA3
A2‐A5
BA
A0,1,6,7
RA
BA0,1,2,3
RA = Row Address
CA = Column Address
BA = Bank Address
A2,3,4,5
DONʹT CARE
Figure 38. Active Command
T0
T1
T2
Ta0
Ta1
Tb0
Tb1
Tc0
Tc1
NOP
ACT
NOP
RD/WR
NOP
PRE*
NOP
ACT
NOP
CK#
CK
CMD
ADDR
BA
RA RA
BA CA
tRCD
tRAS
BA
RA RA
BA
tRP
tRC
BA = bank address; RA = row address; CA = column address
tRCD = tRCDRD, tRCDWR, tRCDRTR, tRCDWTR or tRCDLTR, depending on command
(*) = could also be PREALL
Donʹt Care
Figure 39. Bank Activation Command Cycle
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H5GQ1H24AFR
5.6. BANK RESTRICTIONS
There may be a need to limit the number of activates in a rolling window to ensure that the instantaneous current supplying capability of the devices is not exceeded. To reflect the short term capability of the GDDR5 SGRAM current supply, the parameter tFAW (four activate window) is defined. No more than 4 banks may be activated in a rolling tFAW window. Converting to clocks is done by dividing tFAW (ns) by tCK (ns) and rounding up to next integer value. As an example of the rolling window, if (tFAW/tCK) rounds up to 10 clocks, and an activate command is issued at clock N, no more than three further activate com‐
mands may be issued at clocks N+1 through N+9 as illustrated in Figure 40. To reflect a longer term GDDR5 SGRAM current supply capability, the parameter t32AW (thirty‐two acti‐
vate window) is defined. No more than 32 banks may be activated in a rolling t32AW window. Converting to clocks is done by dividing t32AW (ns) by tCK (ns) and rounding up to next integer value. The use of a shorter and longer rolling activation window allows the GDDR5 SGRAM design to be optimized to handle higher instantaneous currents within a shorter window while still limiting the current strain over a longer period of time. This means that in general t32AW will be greater than or equal to 8* tFAW as shown in Figure41.
It is preferable that GDDR5 SGRAMs have no rolling activation window restrictions (tFAW = 4 * tRRD).
CK#
CK
CMD ACT
ACT
tRRD
ACT
tRRD
ACT
ACT
tRRD
tFAW
ACT
tRRD
ACT
tRRD
ACT
tRRD
tFAW + 3 * t RRD
tRRD = tRRDL or tRRDS depending on Bank Groups on/off setting and accessed banks
Figure 40. tRRD and tFAW
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responsability for use of circuits described. No patent licenses are implied.
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H5GQ1H24AFR
A.) t32AW > 8 * tFAW
tFAW
tFAW
tFAW
tFAW
tFAW
tFAW
tFAW
tFAW
tFAW
t32AW
B.) t32AW = 8 * tFAW
tFAW
tFAW
tFAW
tFAW
tFAW
tFAW
tFAW
tFAW
tFAW
t32AW
Figure 41. t32AW
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5.7. WRITE (WOM)
WRITE bursts are initiated with a WRITE command as shown in Figure 42. The bank and column addresses are provided with the WRITE command and auto precharge is either enabled or disabled for that access with the A8 pin. If auto precharge is enabled, the row being accessed is precharged at the com‐
pletion of the burst after tRAS(min) has been met. The length of the burst initiated with a WRITE command is eight and the column address is unique for this burst of eight. There is no interruption nor truncation of WRITE bursts.
WRITE
CK#
CK
CKE#
LOW
CS#
RAS#
CAS#
WE#
A10,A11
A0,A6
0,0
A9 (A12)
A1
A8
A7
BA0‐BA3
A2‐A5
CA
CA
EN AP
DIS AP
BA
CA
BA = Bank Address; CA = Column Address
EN AP = Enable Auto‐Precharge; DIS AP = Disable Auto‐Precharge
Figure 42. WRITE Command
During WRITE bursts, the first valid data‐in element must be available at the input latch after the Write Latency (WL). The Write Latency is defined as WLmrs * tCK + tWCK2CKPIN + tWCK2CK + tWCK2DQI, where WLmrs is the number of clock cycles programed in MR0, tWCK2CKPIN is the phase offset between WCK and CK at the pins when phase aligned at phase detector, tWCK2CK is the alignment error between WCK and CK at the GDDR5 SGRAM phase detector, and tWCK2DQI is the WCK to DQ/DBI# offset as measured at the DRAM pins to ensure concurrent arrival at the latch. The total delay is relative to the data eye center averaged over one double‐byte. The maximum skew within a double‐byte is defined by tDQDQI. The data input valid window, tDIVW, defines the time region when input data must be valid for reliable data capture at the receiver for any one worst‐case channel. It accounts for jitter between data and clock at the latching point introduced in the path between the DRAM pads and the latching point. Any additional jitter introduced into the source signals (i.e. within the system before the DRAM pad) must be accounted for in the final timing budget together with the chosen PLL mode and bandwidth. tDIVW is measured at the pins. tDIVW is defined for the PLL off and on mode separately. In the case of PLL on, tDIVW must be specified for each supported bandwidth. In general tDIVW is smaller than tDIPW.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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The data input pulse width, tDIPW, defines the minimum positive or negative input pulse width for any one worst‐case channel required for proper propagation of an external signal to the receiver. tDIPW is mea‐
sured at the pins. tDIPW is independent of the PLL mode. In general tDIPW is larger than tDIVW.
Upon completion of a burst, assuming no other WRITE data is expected on the bus the GDDR5 SGRAM DQ and DBI# pins will be driven according to the ODT state. Any additional input data will be ignored. Data for any WRITE burst may not be truncated with a subsequent WRITE command. Data from any WRITE burst may be concatenated with data from a subsequent WRITE command. A con‐
tinuous flow of data can be maintained. The first data element from the new burst follows the last element of a completed burst. The new WRITE command should be issued after the previous WRITE command according to the tCCD timing. If that WRITE command is to another bank then an ACTIVE command must precede the WRITE command and tRCDWR also must be met. A READ can be issued any time after a WRITE command as long as the internal turn around time tWTR is met. If that READ command is to another bank, then an ACTIVE command must precede the READ com‐
mand and tRCDRD also must be met. A PRECHARGE can also be issued to the GDDR5 SGRAM with the same timing restriction as the new WRITE command if tRAS is met. After the PRECHARGE command, a subsequent command to the same bank cannot be issued until tRP is met.
The data inversion flag is received on the DBI# pin to identify whether to store the true or inverted data. If DBI# is LOW, the data will be stored after inversion inside the GDDR5 SGRAM and not inverted if DBI# is HIGH. WRITE Data Inversion can be enabled (A9=0) or disabled (A9=1) using WDBI in MR1.
When enabled by the WRCRC flag in MR4, EDC data are returned to the controller with a latency of (WLmrs + CRCWL) * tCK + tWCK2CKPIN + tWCK2CK + tWCK2DQO, where CRCWL is the CRC Write latency programmed in MR4 and tWCK2DQO is the WCK to DQ/DBI#/EDC phase offset at the DRAM pins.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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tCH
WLmrs
tCL
tCK
CK#
CK
tWCK2CKPIN + tWCK2CK
WCK
WCK#
Case 1: Negative tWCK2DQI
tWCK2DQI
DQ/DBI#
(mean)
D0 D1 D2 D3 D4 D5 D6 D7
tDQDQI(min)
DQ/DBI#
(first bit)
D0 D1 D2 D3 D4 D5 D6 D7
tDQDQI(max)
DQ/DBI#
(last bit)
Case 2: Positive tWCK2DQI
DQ/DBI#
(mean)
D0 D1 D2 D3 D4 D5 D6 D7
tWCK2DQI
D0 D1 D2 D3 D4 D5 D6 D7
tDQDQI(min)
DQ/DBI#
(first bit)
D0 D1 D2 D3 D4 D5 D6 D7
tDQDQI(max)
DQ/DBI#
(last bit)
D0 D1 D2 D3 D4 D5 D6 D7
Donʹt Care
1) WLmrs is the WRITE latency programmed in Mode Register MR0.
2) Timings are shown with positive tWCK2CKPIN and tWCK2CK values. See WCK2CK timings for tWCK2CKPIN and tWCK2CK ranges.
3) tWCK2DQI parameter values could be negative or positive numbers, depending on PLL‐on or PLL‐off mode operation and design implementation. They also vary across PVT. Data training is required to determine the actual tWCK2DQI value for stable WRITE operation.
4) tDQDQI defines the minimum to maximum variation of tWCK2DQI within a double byte (x32 mode) or a single byte (x16 mode).
5) Data Read timings are used for CRC return timing from WRITE commands with CRC enabled.
Figure 43. WRITE Timings
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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T0
T1
T2
T3
COMMAND
WRITE
NOP
NOP
NOP
ADDRESS
Bank a,
Col n
CK#
T3n
T4
T4n
T5
T6
T7
T8
NOP
NOP
NOP
NOP
CK
NOP
Col n
WL = WLmrs = 3
WCK
WCK#
DQ
DBI#
EDC
DO
n
DO
n+7
DBI
n
DBI
n+7
EDC Hold Pattern
DONʹT CARE
TRANSITIONING DATA
Notes: 1. WLmrs = 3 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
3. For WRITE operations it is important that the latching point meet the data valid window requirements, which may or may not be center aligned at the pins. 4. Before the WRITE commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and tRCDWR must be met.
5. tWCK2DQI = 0 is shown for illustration purposes.
Figure 44. Single WRITE without EDC
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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T0
T1
T2
T3
COMMAND
WRITE
NOP
NOP
NOP
ADDRESS
Bank a,
Col n
T3n
T4
T4n
T5
CK#
CK
NOP
NOP
T11
T12
T13
((
))
( ( NOP
))
NOP
NOP
((
))
((
))
((
))
((
))
Col n
WL = WLmrs = 3
WCK
WCK#
DQ
DBI#
EDC
DO
n
DO
n+7
DBI
n
DBI
n+7
((
))
((
))
((
))
((
))
((
))
((
))
EDC Hold Pattern
EDC
n
EDC
n+7
EDC Hold Pattern
CRCWL = 8
DONʹT CARE
TRANSITIONING DATA
Notes: 1. WLmrs = 3 and CRCWL = 8 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
3. For WRITE operations it is important that the latching point meet the data valid window requirements, which may or may not be center aligned at the pins. 4. Before the WRITE commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and tRCDWR must be met.
5. tWCK2DQI, tWCKDQO = 0 is shown for illustration purposes.
Figure 45. Single WRITE with EDC
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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T0
T1
T2
((
))
((
))
CK#
CK
COMMAND
WRITE
ADDRESS
Bank a,
Col m
NOP
Col m
T5
((
) ) Bank b,
( ( Col n
)
tRCDWR )
Bank b,
Row
Row
WCK#
((
))
((
))
DQ
((
))
WCK
((
))
DBI#
T6
T6n
T7
T10
T10n
T11
T11n
T12
((
))
((
))
((
))
WRITE
((
))
ACT
WL = WLmrs = 5
T5n
NOP
((
))
((
))
NOP
NOP
NOP
NOP
((
))
((
))
Col n
WL = WLmrs = 5
((
))
((
))
DO
m
DO
m+7
DBI
m
DBI
m+7
DONʹT CARE
((
))
((
))
DO
n
DO
n+7
DBI
n
DBI
n+7
TRANSITIONING DATA
Notes: 1. WLmrs = 5 and tRCDWR = 3 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
3. EDC may be on or off. See Figure 4 for EDC Timing.
4. For WRITE operations it is important that the latching point meet the data valid window requirements, which may or may not be center aligned at the pins. 5. Before the WRITE commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and tRCDWR must be met.
6. tWCK2DQI = 0 is shown for illustration purposes.
Figure 46. Non-Gapless WRITEs
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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T0
T1
T2
NOP
WRITE
T2n
T3
T3n
T4
T4n
T5
T5n
T6
T7
T8
NOP
NOP
NOP
CK#
CK
COMMAND
WRITE
NOP
NOP
NOP
tCCD
ADDRESS
Bank a,
Col m
Col m
WL = WLmrs = 2
Bank a,
Col n
Col n
WL = WLmrs = 2
WCK
WCK#
DQ
DBI#
DO
m
DO
m+7
DO
n
DO
n+7
DBI
m
DBI
m+7
DBI
n
DBI
n+7
DONʹT CARE
TRANSITIONING DATA
Notes: 1. WLmrs = 2 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
3. EDC may be on or off. See Figure 4 for EDC Timing.
4. tCCD = tCCDS when bank groups is disabled or the second WRITE is to a different bank group, otherwise tCCD=tCCDL.
5. For WRITE operations it is important that the latching point meet the data valid window requirements, which may or may not be center aligned at the pins. 6. Before the WRITE commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and tRCDWR must be met.
7. tWCK2DQI = 0 is shown for illustration purposes.
Figure 47. Gapless WRITEs
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
T0
T1
COMMAND
WRITE
NOP
ADDRESS
Bank a,
Col m
CK#
CK
Col m
((
))
((
))
((
))
((
))
T3
T3n
NOP
T4
T4n
T5
NOP
NOP
((
))
((
))
tWTR
WL = WLmrs = 3
WCK#
DQ
((
))
DBI#
Ta0
((
))
((
))
((
))
((
))
READ
((
))
((
))
Bank b,
Col n
Ta6
((
))
NOP
((
))
Col n
Ta6n
Ta7
Ta8
NOP
NOP
((
))
((
))
CL = CLmrs = 6
((
))
((
))
WCK
((
))
((
))
((
))
DO
m
DO
m+7
DBI
m
DBI
m+7
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
DONʹT CARE
DO
n
DO
n+7
DBI
n
DBI
n+7
TRANSITIONING DATA
Notes: 1. WLmrs = 3 and CLmrs = 6 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
3. EDC may be on or off. See Figure 4 for EDC Timing.
4. tWTR = tWTRL when bank groups is enabled and both WRITE and READ access banks in the same bank group, otherwise tWTR=tWTRS.
5. For WRITE operations it is important that the latching point meet the data valid window requirements, which may or may not be center aligned at the pins. 6. Before the READ and WRITE commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and tRCDRD or tRCDWR
respectively must be met.
7. tWCK2DQI, tWCKDQO = 0 is shown for illustration purposes.
Figure 48. WRITE to READ
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
T0
T1
T2
T3
T3n
T4
T4n
T5
T6
Ta0
CK
COMMAND
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
tWR
ADDRESS
Ta1
((
))
((
))
CK#
Bank a,
Col n
Col n
((
))
((
))
PRE
((
))
((
))
Bank a,
or all
NOP
tRP
WL = WLmrs = 3
WCK
((
))
((
))
WCK#
DQ
DBI#
DO
n
DO
n+7
DBI
n
DBI
n+7
((
))
((
))
DONʹT CARE
TRANSITIONING DATA
Notes: 1. WLmrs = 3 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
3. EDC may be on or off. See Figure 4 for EDC Timing.
4. For WRITE operations it is important that the latching point meet the data valid window requirements, which may or may not be center aligned at the pins. 5. Before the WRITE command, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and tRCDWR must be met.
6. tWCK2DQI = 0 is shown for illustration purposes.
Figure 49. WRITE to PRECHARGE
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
5.8. WRITE DATA MASK (DM)
The traditional method of using a DM pin for WRITE data mask must be abandoned for a new method. Due to the high data rate of GDDR5 SGRAMs, bit errors are expected on the interface and are not recover‐
able when they occur on the traditional DM pin.
In GDDR5 the DM is sent to the SGRAM over the address following the bank/column address cycle associ‐
ated with the command, during the NOP/DESELECT commands between the WRITE command and the next command. The DM is used to mask the corresponding data according to the following table.
Table 17: DM State
DM Value
DQ
Write Enable
0
Valid
Write Inhibit
1
X
FUNCTION
Two additional WRITE commands that augment the traditional WRITE Without Mask (WOM) are required for proper DM support:
• WDM: WRITE‐With‐Doublebyte‐Mask: 2 cycle command where the 1st cycle carries address information and the 2nd cycle carries data mask information (2 byte granularity);
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
WDM
CK#
CK
CKE#
LOW
CS#
RAS#
CAS#
WE#
A9 (A12)
A1
A10,A11
A0,A6
A8
A7
BA0‐BA3
A2‐A5
0,1
CA
DM
DM
CA
DM
DM
DM
DM
DM
DM
EN AP
DIS AP
BA
CA
BA = Bank Address; CA = Column Address; DM = Data Mask
EN AP = Enable Auto‐Precharge; DIS AP = Disable Auto‐Precharge
Note: NOP shown as an example only
Figure 50. WRITE-With-Doublebyte-Mask Command
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
T0
T1
T2
NOP
WDM
T2n
T3
T3n
T4
T4n
T5
T5n
T6
T7
T8
NOP
NOP
NOP
CK#
CK
COMMAND
WDM
NOP
NOP
NOP
tCCD
ADDRESS
Bank a,
Col m
Col m
DM m
WL = WLmrs = 2
DM m
Bank a,
Col n
Col n
DM n
DM n
WL = WLmrs = 2
WCK
WCK#
DQ
DBI#
DO
m
DO
m+7
DO
n
DO
n+7
DBI
m
DBI
m+7
DBI
n
DBI
n+7
DONʹT CARE
TRANSITIONING DATA
Notes: 1. WLmrs = 2 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
3. EDC may be on or off. See Figure 4 for EDC Timing.
4. tCCD = tCCDS when bank groups is disabled or the second WRITE is to a different bank group, otherwise tCCD=tCCDL.
5. For WRITE operations it is important that the latching point meet the data valid window requirements, which may or may not be center aligned at the pins. 6. Before the WRITE commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and tRCDWR must be met.
7. tWCK2DQI = 0 is shown for illustration purposes.
Figure 51. WDM Timing
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
• WSM: WRITE‐With‐Singlebyte‐Mask: 3 cycle command where the 1st cycle carries address information, the 2nd and 3rd cycle carry data mask information
WSM
CK#
CK
CKE#
LOW
CS#
RAS#
CAS#
WE#
A9 (A12)
A1
A10,A11
A0,A6
A8
A7
BA0‐BA3
A2‐A5
0,1
CA
DM
DM
DM
DM
CA
DM
DM
DM
DM
DM
DM
DM
DM
DM
DM
DM
DM
EN AP
DIS AP
BA
CA
BA = Bank Address; CA = Column Address; DM = Data Mask
EN AP = Enable Auto‐Precharge; DIS AP = Disable Auto‐Precharge
Note: NOP shown as an example only
Figure 52. WRITE-With-Singlebyte-Mask Command
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
T0
T1
T2
((
))
((
))
CK#
CK
COMMAND
ADDRESS
WSM
Bank a,
Col m
NOP
Col m
DM m
DM m
T5n
((
) ) Bank b,
( ( Col n
))
DM m
WCK#
((
))
((
))
DQ
((
))
DBI#
T6n
T7
T10
T10n
T11
T11n
T12
NOP
((
))
NOP
((
))
NOP
NOP
NOP
((
Col n
DM n
DM n
DM n
DM n ) )
((
))
WL = WLmrs = 5
WL = WLmrs = 5
WCK
T6
((
))
((
))
((
))
WSM
((
))
NOP
DM m
T5
((
))
((
))
((
))
DO
m
DO
m+7
DBI
m
DBI
m+7
DONʹT CARE
((
) ) DO
n
((
) ) DBI
n
DO
n+7
DBI
n+7
TRANSITIONING DATA
Notes: 1. WLmrs = 5 and tRCDWR = 3 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
3. EDC may be on or off. See Figure 4 for EDC Timing.
4. For WRITE operations it is important that the latching point meet the data valid window requirements, which may or may not be center aligned at the pins. 5. Before the WRITE commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and tRCDWR must be met.
6. tWCK2DQI = 0 is shown for illustration purposes.
Figure 53. WSM Timing
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
Table 18 WDM Mapping for mirrored & non‐mirrored x32 Mode
Byte and Burst Position Masked during WDM
ADR
ADR CK Rising Edge
Byte
Burst
A10
DQ[15:0]
0
A9
DQ[15:0]
1
BA0
DQ[15:0]
BA3
ADR
ADR CK# Rising Edge
Byte
Burst
A0
DQ[15:0]
4
A1
DQ[15:0]
5
2
A2
DQ[15:0]
6
DQ[15:0]
3
A3
DQ[15:0]
7
BA2
DQ[31:16]
0
A4
DQ[31:16]
4
BA1
DQ[31:16]
1
A5
DQ[31:16]
5
A11
DQ[31:16]
2
A6
DQ[31:16]
6
A8
DQ[31:16]
3
A7
DQ[31:16]
7
Table 19 WDM Mapping for non‐mirrored x16 Mode
Byte and Burst Position Masked during WDM
ADR CK Rising Edge
ADR
ADR CK# Rising Edge
ADR
Byte
Burst
Byte
Burst
A10
DQ[7:0]
0
A0
DQ[7:0]
4
A9
DQ[7:0]
1
A1
DQ[7:0]
5
BA0
DQ[7:0]
2
A2
DQ[7:0]
6
BA3
DQ[7:0]
3
A3
DQ[7:0]
7
BA2
DQ[23:16]
0
A4
DQ[23:16]
4
BA1
DQ[23:16]
1
A5
DQ[23:16]
5
A11
DQ[23:16]
2
A6
DQ[23:16]
6
A8
DQ[23:16]
3
A7
DQ[23:16]
7
Table 20 WDM Mapping for mirrored x16 Mode
Byte and Burst Position Masked during WDM
ADR CK Rising Edge
ADR
ADR CK# Rising Edge
ADR
Byte
Burst
Byte
Burst
A10
DQ[15:8]
0
A0
DQ[15:8]
4
A9
DQ[15:8]
1
A1
DQ[15:8]
5
BA0
DQ[15:8]
2
A2
DQ[15:8]
6
BA3
DQ[15:8]
3
A3
DQ[15:8]
7
BA2
DQ[31:24]
0
A4
DQ[31:24]
4
BA1
DQ[31:24]
1
A5
DQ[31:24]
5
A11
DQ[31:24]
2
A6
DQ[31:24]
6
A8
DQ[31:24]
3
A7
DQ[31:24]
7
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Table 21 WSM Mapping for mirrored and non‐mirrored x32 Mode
Byte and Burst Position Masked During WSM
ADR CK 1st rising Edge
ADR CK# 1st rising Edge
ADR CK 2nd rising Edge
ADR CK# 2nd rising Edge
ADR
Byte
Burst
ADR
Byte
Burst
ADR
Byte
Burst
ADR
Byte
Burst
A10
DQ[7:0]
0
A0
DQ[7:0]
4
A10
DQ[15:8]
0
A0
DQ[15:8]
4
A9
DQ[7:0]
1
A1
DQ[7:0]
5
A9
DQ[15:8]
1
A1
DQ[15:8]
5
BA0
DQ[7:0]
2
A2
DQ[7:0]
6
BA0
DQ[15:8]
2
A2
DQ[15:8]
6
BA3
DQ[7:0]
3
A3
DQ[7:0]
7
BA3
DQ[15:8]
3
A3
DQ[15:8]
7
BA2
DQ[23:16]
0
A4
DQ[23:16]
4
BA2
DQ[31:24]
0
A4
DQ[31:24]
4
BA1
DQ[23:16]
1
A5
DQ[23:16]
5
BA1
DQ[31:24]
1
A5
DQ[31:24]
5
A11
DQ[23:16]
2
A6
DQ[23:16]
6
A11
DQ[31:24]
2
A6
DQ[31:24]
6
A8
DQ[23:16]
3
A7
DQ[23:16]
7
A8
DQ[31:24]
3
A7
DQ[31:24]
7
Table 22 WSM Mapping for non‐mirrored x16 Mode
Byte and Burst Position Masked During WSM
ADR CK 1st rising Edge
ADR CK# 1st rising Edge
ADR CK 2nd rising Edge
ADR CK# 2nd rising Edge
ADR
Byte
Burst
ADR
Byte
Burst
Byte
Burst
Byte
Burst
A10
DQ[7:0]
0
A0
DQ[7:0]
4
‐
0
‐
4
A9
DQ[7:0]
1
A1
DQ[7:0]
5
‐
1
‐
5
BA0
DQ[7:0]
2
A2
DQ[7:0]
6
‐
2
‐
6
BA3
DQ[7:0]
3
A3
DQ[7:0]
7
‐
3
‐
7
BA2
DQ[23:16]
0
A4
DQ[23:16]
4
‐
0
‐
4
BA1
DQ[23:16]
1
A5
DQ[23:16]
5
‐
1
‐
5
A11
DQ[23:16]
2
A6
DQ[23:16]
6
‐
2
‐
6
A8
DQ[23:16]
3
A7
DQ[23:16]
7
‐
3
‐
7
Table 23 WSM Mapping for mirrored x16 Mode
Byte and Burst Position Masked During WSM
ADR CK 1st rising Edge
ADR CK# 1st rising Edge
Byte
Burst
Byte
Burst
ADR
ADR CK 2nd rising Edge
Byte
Burst
ADR
ADR CK# 2nd rising Edge
Byte
Burst
‐
0
‐
4
A10
DQ[15:8]
0
A0
DQ[15:8]
4
‐
1
‐
5
A9
DQ[15:8]
1
A1
DQ[15:8]
5
‐
2
‐
6
BA0
DQ[15:8]
2
A2
DQ[15:8]
6
‐
3
‐
7
BA3
DQ[15:8]
3
A3
DQ[15:8]
7
‐
0
‐
4
BA2
DQ[31:24]
0
A4
DQ[31:24]
4
‐
1
‐
5
BA1
DQ[31:24]
1
A5
DQ[31:24]
5
‐
2
‐
6
A11
DQ[31:24]
2
A6
DQ[31:24]
6
‐
3
‐
7
A8
DQ[31:24]
3
A7
DQ[31:24]
7
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responsability for use of circuits described. No patent licenses are implied.
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5.9. READ
A READ burst is initiated with a READ command as shown in Figure 54. The bank and column addresses are provided with the READ command and auto precharge is either enabled or disabled for that access with the A8 address. If auto precharge is enabled, the row being accessed is precharged at the completion of the burst after tRAS(min) has been met. The length of the burst initiated with a READ command is eight and the column address is unique for this burst of eight. There is no interruption nor truncation of READ bursts.
READ
CK#
CK
CKE#
LOW
CS#
RAS#
CAS#
WE#
A10,A11
A0,A6
0,0
A9 (A12)
A1
A8
A7
BA0‐BA3
A2‐A5
CA
CA
EN AP
DIS AP
BA
CA
BA = Bank Address; CA = Column Address
EN AP = Enable Auto‐Precharge; DIS AP = Disable Auto‐Precharge
Figure 54. READ Command
During READ bursts, the first valid data‐out element will be available after the CAS latency (CL). The CAS Latency is defined as CLmrs * tCK + tWCK2CKPIN + tWCK2CK + tWCK2DQO, where CLmrs is the number of clock cycles programed in MR0, tWCK2CKPIN is the phase offset between WCK and CK at the pins when phase aligned at phase detector, tWCK2CK is the alignment error between WCK and CK at the GDDR5 SGRAM phase detector, and tWCK2DQO is the WCK to DQ/DBI#/EDC offset as measured at the DRAM pins. The total delay is relative to the data eye initial edge averaged over one double‐byte. The maximum skew within a double‐byte is defined by tDQDQO. Upon completion of a burst, assuming no other READ command has been initiated, all DQ and DBI# pins will drive a value of ʹ1ʹ and the ODT will be enabled at a maximum of 1 tCK later. The drive value and ter‐
mination value may be different due to separately defined calibration offsets. If the ODT is disabled, the pins will drive Hi‐Z.
Data from any READ burst may be concatenated with data from a subsequent READ command. A contin‐
uous flow of data can be maintained. The first data element from the new burst follows the last element of a completed burst. The new READ command should be issued after the previous READ command accord‐
ing to the tCCD timing. If that READ command is to another bank then an ACTIVE command must pre‐
cede the READ command and tRCDRD also must be met. This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
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A WRITE can be issued any time after a READ command as long as the bus turn around time tRTW is met. If that WRITE command is to another bank, then an ACTIVE command must precede the second WRITE command and tRCDWR also must be met. A PRECHARGE can also be issued to the GDDR5 SGRAM with the same timing restriction as the new READ command if tRAS is met. After the PRECHARGE command, a subsequent command to the same bank cannot be issued until tRP is met.
The data inversion flag is driven on the DBI# pin to identify whether the data is true or inverted data. If DBI# is HIGH, the data is not inverted, and if LOW it is inverted. READ Data Inversion can be enabled (A8=0) or disabled (A8=1) using RDBI in MR1. This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
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When enabled by the RDCRC flag in MR4, EDC data is returned to the controller with a latency of (CLmrs + CRCRL) * tCK + tWCK2CKPIN + tWCK2CK + tWCK2DQO, where CRCRL is the CRC Read latency pro‐
grammed in MR4.
tCH
CLmrs
tCL
tCK
CK#
CK
tWCK2CKPIN + tWCK2CK
WCK
WCK#
Case 1: Negative tWCK2DQO
tWCK2DQO
DQ/DBI#/EDC
(mean)
D0 D1 D2 D3 D4 D5 D6 D7
tDQDQO(min)
DQ/DBI#/EDC
(first bit)
D0 D1 D2 D3 D4 D5 D6 D7
tDQDQO(max)
DQ/DBI#/EDC
(last bit)
Case 2: Positive tWCK2DQO
DQ/DBI#/EDC
(mean)
D0 D1 D2 D3 D4 D5 D6 D7
tWCK2DQO
D0 D1 D2 D3 D4 D5 D6 D7
tDQDQO(min)
DQ/DBI#/EDC
(first bit)
D0 D1 D2 D3 D4 D5 D6 D7
tDQDQO(max)
DQ/DBI#/EDC
(last bit)
D0 D1 D2 D3 D4 D5 D6 D7
Donʹt Care
1) CLmrs is the CAS latency programmed in Mode Register MR0.
2) Timings are shown with positive tWCK2CKPIN and tWCK2CK values. See WCK2CK timings for tWCK2CKPIN and tWCK2CK ranges.
3) tWCK2DQO parameter values could be negative or positive numbers, depending on PLL‐on or PLL‐off mode operation and design implementation. They also vary across PVT. Data training is required to determine the actual tWCK2DQO value for stable READ operation.
4) tDQDQO defines the minimum to maximum variation of tWCK2DQO within a double byte (x32 mode) or a single byte (x16 mode).
5) tDQDQO also applies for CRC data from WRITE and READ commands with CRC enabled, the EDC hold
pattern, and the data strobe in RDQS mode.
Figure 55. READ Word Lane Timing
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responsability for use of circuits described. No patent licenses are implied.
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H5GQ1H24AFR
T0
T1
T2
COMMAND
READ
NOP
NOP
ADDRESS
Bank a,
Col n
CK#
CK
Col n
CL = CLmrs = 6
WCK
((
))
((
))
((
))
((
))
((
))
((
))
WCK#
((
))
((
))
DQ
((
))
DBI#
((
))
ODT
((
))
((
))
EDC
ODT Enabled
T5
T6
T6n
NOP
NOP
T7
T7n
NOP
T8
T9
T10
NOP
NOP
NOP
DO
n
DO
n+7
DBI
n
DBI
n+7
ODT Enabled
ODT Disabled
((
))
((
))
EDC Hold Pattern
DONʹT CARE
TRANSITIONING DATA
Notes: 1. CLmrs = 6 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
3. Before the READ command, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and tRCDRD must be met.
4. tWCK2DQO = 0 is shown for illustration purposes.
Figure 56. Single READ without EDC
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responsability for use of circuits described. No patent licenses are implied.
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H5GQ1H24AFR
T0
T1
READ
NOP
CK#
CK
COMMAND
ADDRESS
Bank a,
Col n
Col n
((
))
((
))
((
))
((
))
T6
NOP
T6n
T7
NOP
T7n
T8
T9
T10
NOP
NOP
NOP
T10n
T11
T11n
NOP
T12
NOP
((
))
((
))
CL = CLmrs = 6
WCK
DQ
((
))
((
))
((
))
DBI#
((
))
WCK#
EDC
((
))
((
))
DO
n
DO
n+7
DBI
n
DBI
n+7
EDC
n
EDC Hold Pattern
EDC
n+7
EDC Hold Pattern
CRCRL = 4
DONʹT CARE
TRANSITIONING DATA
Notes: 1. CLmrs = 6 and CRCRL = 4 are shown as examples. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
3. Before the READ command, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and tRCDRD must be met.
4. tWCK2DQO = 0 is shown for illustration purposes.
Figure 57. Single READ with EDC
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H5GQ1H24AFR
T0
T1
CK
COMMAND
NOP
READ
tCCD
ADDRESS
T3
T6
Bank a,
Col m
Col m
CL = CLmrs = 6
T6n
T7
T7n
T8
T9
T9n
NOP
NOP
T10
T10n
T11
((
))
((
))
((
))
((
))
CK#
((
))
((
))
READ
((
))
((
))
Bank b,
Col n
((
) )NOP
((
))
Col n
NOP
NOP
NOP
((
))
((
))
CL = CLmrs = 6
WCK
WCK#
((
))
((
))
((
))
((
))
DQ
((
))
((
))
DBI#
((
))
((
))
DO
m
DO
m+7
DO
n
DO
n+7
DBI
m
DBI
m+7
DBI
n
DBI
n+7
DONʹT CARE
TRANSITIONING DATA
Notes: 1. CLmrs = 6 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
3. EDC may be on or off. See Figure 4 for EDC Timing.
4. tCCD = tCCDL when bank groups are enabled and both READs access banks in the same bank group; otherwise tCCD=tCCDS. 5. Before the READ commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and tRCDRD must be met.
6. tWCK2DQI = 0 is shown for illustration purposes.
Figure 58. Non-Gapless READs
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H5GQ1H24AFR
T0
T1
T2
T3
CK
COMMAND
READ
NOP
READ
NOP
tCCD
ADDRESS
T6
T6n
T7
T7n
T8
T8n
T9
T9n
T10
((
))
((
))
CK#
Bank a,
Col m
Col m
Bank b,
Col n
Col n
((
))
((
))
NOP
NOP
NOP
NOP
NOP
((
))
((
))
CL = CLmrs = 6
WCK
WCK#
((
))
((
))
DQ
((
))
DBI#
((
))
DO
m
DO
m+7
DO
n
DO
n+7
DBI
m
DBI
m+7
DBI
n
DBI
n+7
DONʹT CARE
TRANSITIONING DATA
Notes: 1. CLmrs = 6 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
3. EDC may be on or off. See Figure 4 for EDC Timing.
4. tCCD = tCCDS when bank groups are disabled or the second READ is to a different bank group; otherwise tCCD=tCCDL. 5. Before the READ commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and tRCDRD must be met.
6. tWCK2DQI = 0 is shown for illustration purposes.
Figure 59. Gapless READs
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responsability for use of circuits described. No patent licenses are implied.
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H5GQ1H24AFR
T0
T1
CK
COMMAND
READ
NOP
tRTW
ADDRESS
T6
T6n
Bank a,
Col m
Col m
((
))
((
))
NOP
T7n
WRITE
((
))
((
))
Bank b,
Col n
CL = CLmrs = 6
WCK
T7
T8
T9
T10
NOP
NOP
NOP
T10n
T11
T11n
T12
((
))
((
))
CK#
NOP
NOP
Col n
WL = WLmrs = 3
WCK#
((
))
((
))
DQ
((
))
DBI#
((
))
DO
m
DO
m+7
DO
n
DO
n+7
DBI
m
DBI
m+7
DBI
n
DBI
n+7
DONʹT CARE
TRANSITIONING DATA
Notes: 1. WLmrs = 3 and CLmrs = 6 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
3. EDC may be on or off. See Figure 4 for EDC Timing.
4. tWTR = tWTRL when bank groups is enabled and both WRITE and READ access banks in the same bank group, otherwise tWTR=tWTRS.
5. For WRITE operations it is important that the latching point meet the data valid window requirements, which may or may not be center aligned at the pins. 6. Before the READ and WRITE commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and tRCDRD or tRCDWR
respectively must be met.
7. tWCK2DQI, tWCKDQO = 0 is shown for illustration purposes.
Figure 60. READ to WRITE
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responsability for use of circuits described. No patent licenses are implied.
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H5GQ1H24AFR
T0
T1
T2
NOP
PRE
T3
T4
T5
T6
T6n
NOP
NOP
NOP
T7
T7n
T8
CK#
CK
COMMAND
READ
ADDRESS
Bank a,
Col n
Col n
NOP
NOP
NOP
tRP
tRTP
Bank a,
or all
CL = CLmrs = 6
WCK
WCK#
DQ
DBI#
DONʹT CARE
DO
n
DO
n+7
DBI
n
DBI
n+7
TRANSITIONING DATA
Notes: 1. CLmrs = 6 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
3. EDC may be on or off. See Figure 4 for EDC Timing.
4. tRTP = tRTPL when bank groups are enabled and the PRECHARGE command accesses the same bank; otherwise tRTP = tRTPS. 5. Before the READ commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and tRCDRD must be met.
6. tWCK2DQO = 0 is shown for illustration purposes.
Figure 61. READ to PRECHARGE
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5.10. DQ PREAMBLE
DQ preamble is a feature for GDDR5 SGRAMs that is used for READ data. DQ preamble conditions the DQs for better signal integrity on the initial data of a burst.
Once enabled by bit 5 in MR7, the DQ preamble will precede all READ bursts, including non‐consecutive READ bursts with a minimum gap of 1 tCK, as shown in Figure 58. When enabled, the DQ preamble pat‐
tern applies to all DQ and DBI# pins in a byte, and the same pattern is used for all bytes as shown in Figure62. DQ preamble is enabled or disabled for all bytes. The EDC pin in each byte is not included in the DQ preamble. If ODT is enabled, the ODT is disabled 1 tCK before the start of the preamble pattern as shown in Figure 63.
The preamble pattern on the DBI# pin is only enabled if the MR for RDBI is enabled (MR1 A8 bit). During the preamble the DBI# pin is treated as another DQ pin and the preamble pattern on the DQs is not encoded with RDBI. If RDBI is disabled, then the DBI# pin drives ODT. Byte 0
Byte 1
Byte 2
Byte 3
Idle
Preamble
Burst
DQ7
DQ15
DQ23
DQ31
1
1
1
1
0
1
0
1
x
x
x
x
x
x
x
x
DQ6
DQ14
DQ22
DQ30
1
1
1
1
1
0
1
0
x
x
x
x
x
x
x
x
DQ5
DQ13
DQ21
DQ29
1
1
1
1
0
1
0
1
x
x
x
x
x
x
x
x
DQ4
DQ12
DQ20
DQ28
1
1
1
1
1
0
1
0
x
x
x
x
x
x
x
x
DQ3
DQ11
DQ19
DQ27
1
1
1
1
0
1
0
1
x
x
x
x
x
x
x
x
DQ2
DQ10
DQ18
DQ26
1
1
1
1
1
0
1
0
x
x
x
x
x
x
x
x
DQ1
DQ9
DQ17
DQ25
1
1
1
1
0
1
0
1
x
x
x
x
x
x
x
x
DQ0
DQ8
DQ16
DQ24
1
1
1
1
1
0
1
0
x
x
x
x
x
x
x
x
DBI0#
DBI1#
DBI2#
DBI3#
1
1
1
1
0
1
0
1
x
x
x
x
x
x
x
x
Max 0’s
0
0
0
0
5
4
5
4
4
4
4
4
4
4
4
4
Time
Notes:
1) The number of Max 0’s in the burst is 4 only if RDBI is enabled. Max 0‘s is on a per byte basis and does not include the EDC pin.
2) x = Valid Data
Figure 62. DQ Preamble Pattern
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H5GQ1H24AFR
T0
T1
COMMAND
READ
NOP
ADDRESS
Bank a,
Col n
CK#
CK
Col n
CL = CLmrs = 6
((
))
((
))
((
))
((
))
((
))
((
))
WCK#
((
))
((
))
DQ6
((
))
DQ7
((
))
DBI#
((
))
WCK
ODT
ODT Enabled
T4
T5
NOP
NOP
((
))
((
))
T5n
T6
T6n
NOP
T7
T7n
NOP
T8
T9
T10
NOP
NOP
NOP
DO
n
DO
n+7
DO
n
DO
n+7
DBI
n
DBI
n+7
ODT Disabled
DONʹT CARE
ODT Enabled
TRANSITIONING DATA
Notes: 1. CLmrs = 6 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
3. EDC may be on or off. See Figure 4 for EDC Timing.
4. DQ6, DQ7 and the DBI# pin are shown to illustrate the DQ preamble pattern. RDBI is Enabled (MR1 A8=0).
5. Before the READ commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and tRCDRD must be met.
6. tWCK2DQO = 0 is shown for illustration purposes.
Figure 63. Preamble Timing Diagram
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5.11. READ and WRITE DATA BUS INVERSION (DBI)
The GDDR5 SGRAM Data Bus Inversion (DBIdc) reduces the DC power consumption on data pins, as the number of DQ lines driving a low level can be limited to 4 within a byte. DBIdc is evaluated per byte.
There is one DBI# pin per byte: DBI0# is associated with DQ0‐DQ7, DBI1# with DQ8‐DQ15, DBI2# with DQ16‐DQ23 and DBI3# with DQ24‐DQ31.
The DBI# pins are bidirectional active Low double data rate (DDR) signals. For Writes, they are sampled by the GDDR5 SGRAM along with the DQ of the same byte. For Reads, they are driven by the GDDR5 SGRAM along with the DQ of the same byte.
Once enabled by the corresponding RDBI Mode Register bit, the GDDR5 SGRAM inverts read data and sets DBI# Low, when the number of ’0’ data bits within a byte is greater than 4; otherwise the GDDR5 SGRAM does not invert the read data and sets DBI# High, as shown in Figure 64.
Once enabled by the corresponding WDBI Mode Register bit, the GDDR5 SGRAM inverts write data received on the DQ inputs in case DBI# was sampled Low, or leaves the data non‐inverted in case DBI# was sampled High, as shown in Figure 65.
8
from DRAM
core
8
DQ
’0’
count
>4
DBI#
from Mode Register:
0 = enabled
1 = disabled
Figure 64. Example of Data Bus Inversion Logic for READs
8
DQ
DBI#
8
to DRAM
core
from Mode Register:
0 = enabled
1 = disabled
Figure 65. Example of Data Bus Inversion Logic for WRITEs
The flow diagram in Figure 66 illustrates the DBIdc operation. In any case, the transmitter (the controller for WRITEs, the GDDR5 SGRAM for READs) decides whether to invert or not invert the data conveyed on the DQs. The receiver (the GDDR5 SGRAM for WRITEs, the controller for READs) has to perform the reverse operation based on the level on the DBI# pin. Data input and output timing parameters are only valid with DBI being enabled and a maximum of 4 data lines per byte driven Low.
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Logical output data
Transmitter
Determine ’0’ count
in data byte
No
’0’ count
> 4 ?
Yes
DBI# = ’H’
Don’t invert data byte
DBI# = ’L’
Invert data byte DBI# = ’H’
Don’t invert data byte
DBI# = ’L’
Invert data byte Receiver
Logical input data
Figure 66. DBI Flow Diagram
DBI# Pin Special Function Overview
The DBI# pin has special behavior compared to DQ pins because of the ability to enable and disable it via MRS. For either WRITE or READ DBI# pin training, both DBI READ and DBI WRITE in MRS must be enabled. The behavior of the DBI# pin in various mode register settings is summarized below:
If both DBI READ and DBI WRITE are enabled:
• Pin drives DBI FIFO data with RDTR command
• DBI# pin FIFO accepts WRTR data with the WRTR command
If only DBI READ is enabled:
• DBI# pin drives ODT when not READ or RDTR
If only DBI WRITE is enabled:
• Pin always drives ODT (unless RESET)
If both DBI READ and DBI WRITE are disabled:
• DBI# pin drives ODT (unless RESET)
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5.12. ERROR DETECTION CODE (EDC)
The GDDR5 SGRAM provides error detection on the data bus to improve system reliability. The device generates a checksum per byte lane for both READ and WRITE data and returns the checksum to the con‐
troller. Based on the checksum, the controller can decide if the data (or the returned CRC) was transmitted in error and retry the READ or WRITE command. The GDDR5 SGRAM itself does not perform any error correction. The features of the EDC are:
• 8 bit checksum on 72 bits (9 channels x 8 bit burst)
• dedicated EDC transfer pin per 9 channels (4x per GDDR5 SGRAM)
• asymmetrical latencies on EDC transfer for Reads and Writes
The CRC polynomial used by the GDDR5 SGRAM is an ATM‐8 HEC, X^8+X^2+X^1+1. The starting seed value is set in hardware at “zero”. Table 24 shows the error types that are detectable and the detection rate.
Table 24 Error Correction Details
Error Type
Detection Rate
Random Single Bit
100%
Random Double Bit
100%
Random Odd Count
100%
Burst <= 8
100%
The bit ordering calculation for the CRC error detection is optimized for errors in the time burst direction. Figure 67 shows the bit orientation on a byte lane basis.
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DQ0
CRC Polynomial
CRC Data Output
EDC bit ordering Burst 8 Ordering (2 tCK)
T0
CRC Data Input
DQ/DBI# bit ordering T0 + 8 U.I.
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
DQ1
8
9
10
11
12
13
14
15
DQ2
16
17
18
19
20
21
22
23
DQ3
24
25
26
27
28
29
30
31
DQ4
32
33
34
35
36
37
38
39
DQ5
40
41
42
43
44
45
46
47
DQ6
48
49
50
51
52
53
54
55
DQ7
56
57
58
59
60
61
62
63
DBI0#
64
65
66
67
68
69
70
71
X8 + X2 + X + 1 = 0 x 83 = ( X + 1) (X7 + X6 + X5 + X4 + X3 + X2 + 1) T0
Burst 8 Ordering (2 tCK)
T0 + 8 U.I.
X0 X1 X2 X3 X4 X5 X6 X7
Figure 67. EDC Calculation matrix
The CRC calculation is embedded into the WRITE and READ data stream as shown in Figure 16:
• for WRITEs, the CRC checksum is calculated on the DQ and DBI# input data before decoding with DBI
• for READs, the CRC checksum is calculated on the DQ and DBI# output data after encoding with DBI
The bit ordering is optimized for errors in the time burst direction. Figure 67 shows the bit orientation on a byte lane basis. All ʹ1sʹ are assumed in the calculation for the DBI# in burst in case DBI is disabled for WRITEs or READs in the Mode Register.
The CRC calculation is also not affected by any data mask sent along with WDM, WDMA, WSM or WSMA commands.
The EDC latency is based on the CAS latency for READ data and the WRITE latency for WRITE data. Table 25 shows the 2 timing parameters associated with the EDC scheme. Mode Register 4 is used to determine the functionality of the EDC pin. Register bits A9 and A10 control the GDDR5 SGRAM’s CRC calculation independently for READs and WRITEs. With EDC off, the calculated CRC pattern will be replaced by the EDC hold pattern defined in Mode Register bits A0 ‐ A3. See “Mode Registers on page 39” section for more details.
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Table 25 EDC Timing
Description
Parameter
Value
Units
EDC READ Latency
tEDCRL
CL + CRCRL tCK
EDC WRITE Latency
tEDCWL
WL + CRCWL
tCK
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EDC Pin Special Function Overview
The EDC pin is used for many different functions. The behavior of the EDC pin in various modes is sum‐
marized in Table 26.
Table 26 EDC Pin Behavior
Device Status
Device Power‐up
WCK2CK Training
Idle
WRITE Burst
READ or RDTR burst
Condition
EDC0‐EDC3 Pin Status
RESET# = LOW
Hi‐Z
RESET# = HIGH; no WCK clocks
High
RESET# = HIGH; stable WCK clocks
EDC hold pattern (default = ’1111’)
WCK is sampled High
EDC hold pattern (’1111’)
WCK is sampled Low
Inverted EDC hold pattern (’0000’)
EDC13inv MR4 A11=0
EDC hold pattern
EDC13inv MR4 A11=1
EDC0, EDC2: EDC hold pattern
EDC1, EDC3: inverted EDC hold pattern
WRCRC on
CRC data
WRCRC off
EDC hold pattern
RDCRC on
CRC data
RDCRC off
EDC hold pattern
LDFF
WRCRC + RDCRC both on or both off
EDC hold pattern
WRTR burst
‐
EDC hold pattern
WCK enabled (MR5 A1=0)
EDC hold pattern
Power‐Down
WCK disabled during Power‐Down using MR5 A1=1
High
Self Refresh
‐
High
Read Burst in RDQS Mode
MR3 A5=1
Fixed ’1010’ strobe pattern with 4 U.I. preamble
READ burst in RDQS Mode with MR3 A5=1; EDC13inv MR4 A11=1
RDQS pseudo‐differential
EDC0, EDC2: Fixed ’1010’ strobe pattern with 4 U.I. preamble
EDC1, EDC3: Fixed ’0101’ strobe pattern with 4 U.I. preamble
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5.13. PRECHARGE
The PRECHARGE command (see Figure 68) is used to deactivate the open row in a particular bank (PRE) or the open row in all banks (PREALL). The bank(s) will be available for a subsequent row access a speci‐
fied time (tRP) after the PRECHARGE command is issued as illustrated in Figure 39. Input A8 determines whether one or all banks are to be precharged. In case where only one bank is to be precharged, inputs BA0‐BA3 select the bank. Otherwise BA0‐BA3 are treated as “Don’t Care”.
Once a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE command being issued. A PRECHARGE command will be treated as a NOP if there is no open row in that bank, or if the previously open row is already in the process of precharging. Sequences of PRECHARGE commands must be spaced by at least tPPD as shown in Figure 69.
Precharge
CK#
CK
CKE#
LOW
CS#
RAS#
CAS#
WE#
A9‐A11(A12)
A0,A1,A6,A7
PREALL
A8
A7
PRE
BA0‐BA3
A2‐A5
BA
BA = Bank Address (if A8 is LOW;
otherwise Donʹt Care)
Figure 68. PRECHARGE command
T0
T1
T2
T3
T4
NOP
PRE
NOP
PRE
NOP
CK#
CK
CMD
ADDR
BAy
BAx
tRAS
BAx,y = bank address x,y
tPPD
tRP
Donʹt Care
Figure 69. Precharge to Precharge Timings
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5.14. AUTO PRECHARGE
Auto Precharge is a feature which performs the same individual bank precharge function as described above, but without requiring an explicit command. This is accomplished by using A8 (A8 = High), to enable Auto Precharge in conjunction with a specific READ or WRITE command. A precharge of the bank / row that is addressed with the READ or WRITE command is automatically performed upon completion of the read or write burst. Auto Precharge is non persistent in that it is either enabled or disabled for each individual READ or WRITE command.
Auto Precharge ensures that a precharge is initiated at the earliest valid stage within a burst. The user must not issue another command to the same bank until the precharge time (tRP) is completed. This is determined as if an explicit PRECHARGE command was issued at the earliest possible time, as described for each burst type in the OPERATION section of this specification.
5.15. REFRESH
The REFRESH command is used during normal operation of the GDDR5 SGRAM. The command is non persistent, so it must be issued each time a refresh is required. A minimum time tRFC is required between two REFRESH commands. The same rule applies to any access command after the refresh operation. All banks must be precharged prior to the REFRESH command.
The refresh addressing is generated by the internal refresh controller. This makes the address bits ʺDonʹt Careʺ during a REFRESH command. The GDDR5 SGRAM requires REFRESH cycles at an average peri‐
odic interval of tREFI(max). The values of tREFI for different densities are listed in Table 6. To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval is provided. A maximum of eight REFRESH commands can be posted to the GDDR5 SGRAM, and the maximum absolute interval between any REFRESH command and the next REFRESH command is 9 * tREFI.
During REFRESH, and when bit A2 in MR5 is set to 0, WRTR, RDTR, and LDFF commands are allowed at time tREFTR after the REFRESH command, which enable (incremental) data training to occur in parallel with the internal refresh operation and thus without loss of performance on the interface. See READ Train‐
ing and WRITE Training for details.
As impedance updates from the auto‐calibration engine may occur with any REFRESH command, it is safe to only issue NOP commands during tKO period to prevent false command, address or data latching resulting from impedance updates.
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Refresh
CK#
CK
CKE#
LOW
CS#
RAS#
CAS#
WE#
A9‐A11 (A12)
A0,A1,A6
A8
A7
BA0‐BA3
A2‐A5
Figure 70. REFRESH command
T0
T1
Ta0
Ta1
Tb0
Tb1
Tb2
Tb3
Tb4
Tb5
Tc0
PRE ALL
NOP
REF
NOP
tREFTR
WRTR
NOP
NOP
NOP
NOP
NOP
ACT
CK#
CK
CMD
tRP
tRFC
BA
RA
ADDR
tKO
WL = 3
WCK
D0
D1
D2
D3
D4
D5
D6
D7
WCK#
DQ
BA = bank address; RA = row address
WRTR and RDTR commands are allowed during refresh unless disabled in the Mode Register
Donʹt Care
WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
Figure 71. Refresh Timings
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5.16. SELF‐REFRESH
Self‐Refresh can be used to retain data in the GDDR5 SGRAM, even if the rest of the system is powered down. When in the Self‐Refresh mode, the GDDR5 SGRAM retains data without external clocking. The SELF REFRESH ENTRY command (see Figure 72) is initiated like a REFRESH command except that CKE# is pulled HIGH. SELF REFRESH ENTRY is only allowed when all banks are precharged with tRP satisfied, and when the last data element or CRC data element from a preceding READ or WRITE command have been pushed out (tRDSRE). NOP commands are required until tCKSRE is met after the entering Self‐Refresh. The PLL is automatically disabled upon entering Self‐Refresh and is automatically enabled and reset upon exiting Self‐Refresh. If the GDDR5 SGRAM enters Self‐Refresh with the PLL disabled, it will exit Self‐
Refresh with the PLL disabled.
Once the SELF REFRESH ENTRY command is registered, CKE# must be held HIGH to keep the device in Self‐Refresh mode. When the device has entered the Self‐Refresh mode, all external control signals, except CKE# and RESET# are “Don’t care”. For proper Self‐Refresh operation, all power supply and reference pins (VDD, VDDQ, VSS, VSSQ, VREFC, VREFD) must be at valid levels. The GDDR5 SGRAM initiates a minimum of one internal refresh within tCKE period once it enters Self‐Refresh mode. The address, com‐
mand, data and WCK pins are in ODT state, and the EDC pins drive a HIGH.
The clock is internally disabled during Self‐Refresh operation to save power. The minimum time that the GDDR5 SGRAM must remain in Self‐Refresh mode is tCKE. The user may change the external clock fre‐
quency or halt the external CK and WCK clocks tCKSRE after Self‐Refresh entry is registered. However, the clocks must be restarted and stable tCKSRX before the device can exit Self‐Refresh operation.
The procedure for exiting Self‐Refresh requires a sequence of events. First, the CK and WCK clocks must be stable prior to CKE# going back LOW. A delay of at least tXSNRW must be satisfied before a valid com‐
mand not requiring a locked PLL can be issued to the device to allow for completion of any internal refresh in progress. Before a command requiring a locked PLL can be applied, a delay of at least tXSRW must be satisfied.
During Self‐Refresh the on‐die termination (ODT) and driver will not be auto‐calibrated. Therefore, it is recommended that the ODT and driver be recalibrated by the controller upon exiting Self‐Refresh. Alter‐
natively, if changes in voltage and temperature are tracked or known to be bounded then the provided Voltage and Temperature Variation tables may be consulted to determine if recalibration is necessary.
Upon exit from Self‐Refresh, the GDDR5 SGRAM can be put back into Self‐Refresh mode after waiting at least tXSNRW period and issuing one extra REFRESH command.
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Self‐Refresh
CK#
CK
HIGH
CKE#
CS#
RAS#
CAS#
WE#
A9‐A11 (A12)
A0,A1,A6
A8
A7
BA0‐BA3
A2‐A5
Figure 72. SELF REFRESH Entry Command
T0
T1
T2
Ta0
Tb0
Tb1
Tb2
Tc0
Td0
CK#
CK
tCKSRE
tCKSRX
CKE#
tRDSRE or tWRSRE
tRP
CMD
NOP
SRE
tCMDS
tXSRW
tXSNRW
tCPDED
NOP
NOP
NOP
SRX
PREA
Valid
ADDR
DQ
Enter Self Refresh Mode Exit Self Refresh Mode
Donʹt Care
Self refresh exit requires WCK2CK training prior to any WRITE or READ operation
At least one REFRESH command shall be issued after tXSNRW for output driver and termination impedance updates. Figure 73. Self Refresh Entry and Exit
Note: 1. Clock(CK and CK#) must be stable before exiting self refresh mode.
2. Device must be in the all banks idle state prior to entering self refresh mode.
3. tXSNRW is required before any non‐READ or WRITE command can be applied, and tXSRW is required before a READ or WRITE command can be applied.
4. REF = REFRESH command.
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Table 27 Pin States During Self Refresh
Pin
State
EDC
High
DQ/DBI#
ODT
ADR/CMD
ODT
CKE#
ODT (Driven High by Controller)
WCK/WCK#
ODT
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5.17. POWER‐DOWN
GDDR5 SGRAMs requires CKE# to be LOW at all times an access is in progress: from the issuing of a READ or WRITE command until completion of the burst. For READs, a burst completion is defined as when the last data element including CRC has been transmitted on the DQ outputs, for WRITEs, a burst completion is defined as when the last data element has been written to the memory array and CRC data has been returned to the controller.
POWER‐DOWN is entered when CKE# is registered HIGH. If POWER‐DOWN occurs when all banks are idle, this mode is referred to as precharge POWER‐DOWN; if POWER‐DOWN occurs when there is a row active in any bank, this mode is referred to as active POWER‐DOWN. Entering POWER‐DOWN deacti‐
vates the input and output buffers, excluding CK, CK#, WCK, WCK#, EDC pins and CKE#. For maximum power savings, the user has the option of disabling the PLL prior to entering POWER‐
DOWN. In that case, on exiting POWER‐DOWN, WCK2CK training is required to set the internal synchro‐
nizers which will include the enabling of the PLL, PLL reset, and tLK clock cycles must occur before any READ or WRITE command can be issued. While in power‐down, CKE# HIGH and stable CK and WCK signals must be maintained at the device inputs. The EDC pins continuously drive the EDC hold pattern; if the controller does not require CDR, users may program the EDC hold pattern to ’1111’ prior to entering power‐down mode. POWER‐DOWN duration is limited by the refresh requirements of the device.
The POWER‐DOWN state is synchronously exited when CKE# is registered LOW (in conjunction with a NOP or DESELECT command). A valid executable command may be applied tXPN cycles later. The min. power‐down duration is specified by tPD.
T0
T1
T2
T3
T4
Ta0
Ta1
Tb0
Ta2
CK#
CK
CKE#
tCPDED
tRDSRE or tWRSRE
CMD
NOP
tPD
PDE
NOP
tXPN
NOP
NOP
PDX
Valid
WCK
WCK#
Enter Power‐Down Mode
Exit Power‐Down Mode
Donʹt Care
Figure 74. Power-Down Entry and Exit
Note:
1. Minimum CKE# pulse width must satisfy tCKE.
2. After issuing Power‐Down command, two more NOPs should be issued.
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Table 28 Pin States During Power Down
Pin
EDC
LP2
State
WCK
‘Hold’
no WCK
High
DQ/DBI#
x
ODT
ADR/CMD
x
ODT
CKE#
x
ODT (Driven High by Controller)
WCK/WCK#
x
ODT
5.18. COMMAND TRUTH TABLES
Table 29 Truth Table – CKE#
CURRENT STATE
CKE#n‐1
CKE#n
COMMANDn
ACTIONn
H
H
Power‐Down
X
Maintain Power‐Down
H
H
Self Refresh
X
Maintain Self Refresh
H
L
Power‐Down
DESELECT or NOP
Exit Power‐Down
H
L
Self Refresh
DESELECT or NOP
Exit Self Refresh
L
H
All Banks Idle
DESELECT or NOP
Precharge Power‐Down Entry
L
H
Bank(s) Active
DESELECT or NOP
Active Power‐Down Entry
L
H
All Banks Idle
REFRESH
Self Refresh Entry
L
L
See <Link>Table 30 and <Link>Table 31
NOTES
5
1, 2, 3
Notes:
1. CKE#n is the logic state of CKE# at clock edge n; CKE#n‐1 was the state of CKE# at the previous clock edge.
2. Current state is the state of the GDDR5 SGRAM immediately prior to clock edge n.
3. COMMANDn is the command registered at clock edge n, and ACTIONn is a result of COMMANDn.
4. All states and sequences not shown are illegal or reserved.
5. DESELECT or NOP commands should be issued on any clock edges occurring during the tXSRW period. A minimum of tLK is needed for the PLL to lock before applying a READ or WRITE command if the PLL was disabled.
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Table 30 Truth Table – Current State Bank n – Command To Bank n CURRENT STATE
Any
Idle
Row Active
Read
(Auto Precharge Disabled)
Write
(Auto Precharge Disabled)
(WOM, WSM or WDM)
CS#
RAS# CAS#
WE#
COMMAND/ACTION
NOTES
H
X
X
X
DESELECT (NOP/continue previous operation)
L
H
H
H
NO OPERATION (NOP/continue previous operation)
L
L
H
H
ACTIVE (select and activate row)
L
L
L
H
REFRESH
4
L
L
L
L
MODE REGISTER SET
4
L
H
L
H
READ (select column and start READ burst)
6
L
WRITE (select column and start WRITE burst)
(WOM, WSM or WDM)
6
L
H
L
L
L
H
L
PRECHARGE (deactivate row in bank or banks)
5
L
H
L
H
READ (select column and start new READ burst)
6
L
H
L
L
WRITE (select column and start WRITE burst)
(WOM, WSM or WDM)
L
L
H
L
PRECHARGE (only after the READ burst is complete
L
H
L
H
READ (select column and start READ burst)
L
H
L
L
WRITE (select column and start new WRITE burst)
(WOM, WSM or WDM)
L
L
H
L
PRECHARGE (only after the WRITE burst is complete)
6, 8
5
6, 7
6
5, 7
Notes
1. This table applies when CKE#n‐1 was LOW and CKE#n is LOW (see <Link>Table 29) and after tXSNR has been met (if the previous state was self refresh).
2. This table is bank‐specific, except where noted (i.e., the current state is for a specific bank and the commands shown are those allowed to be issued to that bank when in that state). Exceptions are covered in the notes below.
3. Current state definitions:
Idle: The bank has been precharged, and tRP has been met.
Row Active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are in progress.
Read: A READ burst has been initiated, with auto precharge disabled.
Write: A WRITE burst has been initiated, with auto precharge disabled.
4. The following states must not be interrupted by a command issued to the same bank. DESELECT or NOP commands, or allowable commands to the other bank should be issued on any clock edge occurring during these states. Allowable commands to the other bank are determined by its current state and <Link>Table 30, and according to <Link>Table 31.
Precharging: Starts with registration of a PRECHARGE command and ends when tRP is met. Once tRP is met, the bank will be in the idle state.
Row Activating: Starts with registration of an ACTIVE command and ends when tRCD is met. Once tRCD is met, the bank will be in the “row active” state.
Read w/Auto‐Precharge Enabled: Starts with registration of a READ command with auto precharge enabled and ends when tRP has been met. Once tRP is met, the bank will be in the idle state.
Write w/Auto‐Precharge Enabled: Starts with registration of a WRITE command with auto precharge enabled and ends when tRP has been met. Once tRP is met, the bank will be in the idle state.
5. The following states must not be interrupted by any executable command; DESELECT or NOP commands must be applied on each positive clock edge during these states.
Refreshing: Starts with registration of a REFRESH command and ends when tRC is met. Once tRC is met, the GDDR5 SGRAM will be in the all banks idle state.
Accessing Mode Register: Starts with registration of a MODE REGISTER SET command and ends when tMRD has been met. Once tMRD is met, the GDDR5 SGRAM will be in the all banks idle state.
Precharging All: Starts with registration of a PRECHARGE ALL command and ends when tRP is met. Once tRP is met, all banks will be in the idle state.
READ or WRITE: Starts with the registration of the ACTIVE command and ends the last valid data nibble.
6. All states and sequences not shown are illegal or reserved.
7. Not bank‐specific; requires that all banks are idle, and bursts are not in progress.
8. May or may not be bank‐specific; if multiple banks are to be precharged, each must be in a valid state for precharging.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
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9. Reads or Writes listed in the Command/Action column include Reads or Writes with auto precharge enabled and Reads or Writes with auto precharge disabled.
10. A WRITE command may be applied after the completion of the READ burst
Table 31 Truth Table – Current State Bank n – Command To Bank m
CURRENT STATE
CS#
Any
H
X
X
X
DESELECT (NOP/continue previous operation)
L
H
H
H
NO OPERATION (NOP/continue previous operation)
Idle
X
X
X
X
Any Command Otherwise Allowed to Bank m
Row Activating, Active, or Precharging
L
L
H
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start READ burst)
6
L
H
L
L
WRITE (select column and start WRITE burst)
(WOM, WSM or WDM)
6
Read (Auto Precharge Disabled)
RAS#
CAS#
WE#
COMMAND/ACTION
NOTES
L
L
H
L
PRECHARGE
L
L
H
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start new READ burst)
6
L
H
L
L
WRITE (select column and start WRITE burst)
(WOM, WSM or WDM)
6
L
L
H
L
PRECHARGE
Write (Auto Precharge Disabled)
L
L
H
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start READ burst)
L
H
L
L
WRITE (select column and start new WRITE burst)
(WOM, WSM or WDM)
L
L
H
L
PRECHARGE
Read (With Auto Precharge)
L
L
H
H
ACTIVE (select and activate row)
L
L
H
L
PRECHARGE
Write (With Auto Precharge)
L
L
H
H
ACTIVE (select and activate row)
6, 7
6
L
H
L
H
READ (select column and start new READ burst)
6
L
H
L
L
WRITE (select column and start WRITE burst)
(WOM, WSM or WDM)
6
L
H
L
H
READ (select column and start READ burst)
6
L
H
L
L
WRITE (select column and start new WRITE burst)
(WOM, WSM or WDM)
6
L
L
H
L
PRECHARGE
Notes
1. This table applies when CKE#n‐1 was LOW and CKE#n is LOW (see <Link>Table 30) and after tXSNR has been met (if the previous state was self refresh).
2. WRITE in this table refers to both WOM/WOMA, WSM/WSMA and WDM/WDMA commands
3. This table describes alternate bank operation, except where noted (i.e., the current state is for bank n and the commands shown are those allowed to be issued to bank m, assuming that bank m is in such a state that the given command is allowable). Exceptions are covered in the notes below. 4. Current state definitions:
Idle: The bank has been precharged, and tRP has been met.
Row Active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are in progress.
Read: A READ burst has been initiated, with auto precharge disabled.
Write: A WRITE burst has been initiated, with auto precharge disabled.
Read with Auto Precharge Enabled: See following text
Write with Auto Precharge Enabled: See following text
4a. The read with auto precharge enabled or write with auto precharge enabled states can each be broken into two parts: the access period and the precharge period. For read with auto precharge, the precharge period is defined as if the same burst was This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
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executed with auto precharge disabled and then followed with the earliest possible PRECHARGE command that still accesses all of the data in the burst. For write with auto precharge, the precharge period begins when tWR ends, with tWR measured as if auto precharge was disabled. The access period starts with registration of the command and ends where the precharge period (or tRP) begins. During the precharge period of the read with auto precharge enabled or write with auto precharge enabled states, ACTIVE, PRECHARGE, READ and WRITE commands to the other bank may be applied. In either case, all other related limitations apply (e.g., contention between read data and write data must be avoided).
4b. The minimum delay from a READ or WRITE command with auto precharge enabled, to a command to a different bank is summarized below.
5. REFRESH and MODE REGISTER SET commands may only be issued when all banks are idle.
6. All states and sequences not shown are illegal or reserved.
7. READs or WRITEs listed in the Command/Action column include READs or WRITEs with auto precharge enabled and READs or WRITEs with auto precharge disabled.
Table 32 Minimum Delay Between Commands to Different Banks with Auto Precharge Enabled
From Command
To Command
WRITE with AUTO PRECHARGE
(WOMA)
WRITE or WRITE with AUTO PRECHARGE (WOM/WOMA, WSM/WSMA or WDM/WDMA)
READ or READ with AUTO PRECHARGE
Minimum delay (with concurrent auto precharge)
[WLmrs + (BL/4)] tCK + tWTRL ***
2 * tCK
1 tCK
PRECHARGE
1 tCK
ACTIVE
READ or READ with AUTO PRECHARGE
WRITE with AUTO PRECHARGE
(WDMA)
[WL + (BL/4)] tCK + tWTR ***
2 * tCK
WRITE or WRITE with AUTO PRECHARGE (WOM/WOMA, WSM/WSMA or WDM/WDMA)
2 tCK
PRECHARGE
2 tCK
ACTIVE
READ or READ with AUTO PRECHARGE
WRITE with AUTO PRECHARGE
(WSMA)
[WL + (BL/4)] tCK + tWTR ***
3 * tCK
WRITE or WRITE with AUTO PRECHARGE (WOM/WOMA, WSM/WSMA or WDM/WDMA)
3 tCK
PRECHARGE
3 tCK
ACTIVE
2 * tCK
READ or READ with AUTO PRECHARGE
READ with AUTO PRECHARGE
WRITE or WRITE with AUTO PRECHARGE (WOM/WOMA, WSM/WSMA or WDM/ WDMA)
[CLmrs + (BL/4) + 2 ‐ WL] * tCK ***
PRECHARGE
1 tCK
ACTIVE
1 tCK
*** CL = CAS latency (CL)
BL = Burst length
WL = WRITE latency
tWTR = tWTRL if Bank Groups enabled and access to the same bank otherwise tWTR=tWTRS
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5.19. RDQS MODE
For device operation at lower clock frequencies the GDDR5 SGRAM may be set into RDQS mode in which a READ DATA STROBE (RDQS) in the style of GDDR4 will be sent on the EDC pins along with the READ data. The controller will use the RDQS to latch the READ data. RDQS mode is entered by setting the RDQS Mode bit A5 in Mode Register 3 (MR3). When the bit is set, the GDDR5 SGRAM will asynchronously terminate any EDC hold pattern and drive a logic HIGH after tMRD at the latest. All features controlled by MR4 are ignored by RDQS mode.
READ commands are executed as in normal mode regarding command to data out delay and pro‐
grammed READ latencies. A fixed clock‐like pattern as shown in Figure 75 is driven on EDC pins in phase (edge aligned) with the DQ. Prior to the first valid data element, this fixed clock‐like pattern or READ pre‐
amble is driven for 2 tWCK.
No CRC is calculated in RDQS mode, neither for READs nor for WRITEs. The CRC engine is effectively disabled, and the corresponding WRCRC and RDCRC Mode Register bits are ignored. The PLL may be on or off with RDQS mode, depending on system considerations and the PLL’s minimum clock frequency.
There is no equivalent WDQS mode; WRITE commands to the GDDR5 SGRAM are not affected by RDQS mode.
RDQS mode is exited by resetting the RDQS Mode bit. In this case the GDDR5 SGRAM will asynchro‐
nously start driving the EDC hold pattern after tMRD.
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The WCK2CK training should be performed prior to entering RDQS mode. No WCK2CK training can be done when the RDQS mode is active. T0
T1
Ta0
Ta1
Tb0
Tb1
Tb2
Tb3
Tb4
Tb5
Tc0
MRS
NOP
READ
NOP
NOP
NOP
NOP
NOP
MRS
NOP
NOP
CK#
CK
CMD
ADDR
BA CA
MRA MRA
tMRD
MRA MRA
tMRD
CLmrs
WCK
D0
D1
D2
D3
D4
D5
D6
D7
WCK#
DQ
EDC EDC
Hold
EDC
Hold
Enter RDQS Mode
Exit RDQS Mode
Donʹt Care
1. MRA = Mode Register address and opcode; BA = bank address; CA = column address
2. WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
3. Before the READ command, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and tRCDRD must be met.
4. tWCK2DQO = 0 is shown for illustration purposes.
Figure 75. RDQS Mode Timings
EDC1 and EDC3 can be treated as pseudo‐differential to EDC0 and EDC2 respectively, by setting the EDC13Inv field, bit A11 in MR4, as shown in Table 34. Table 33 EDC pin behavior in RDQS mode including pseudo‐differential RDQS
NOP
MRS Set
RDQS Mode
WCK2CK Training
On
Off
READ/RDTR
(except
RD/RDTR/
PDN/SRF)
POWER‐
DOWN/SELF REFRESH
EDC13 Invert
EDC02 Output
EDC13 Output
EDC0123 Output
EDC0123 Output
Off
RDQS
RDQS
1111
High
On
RDQS
Inverted RDQS
1111
High
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5.20. CLOCK FREQUENCY CHANGE SEQUENCE
Step 1) Wait until all commands have finished, all banks are idle.
Step 2) Send NOP or DESELECT (must meet setup/hold relative to clock while clock is changing) to GDDR5 SGRAM for the entire sequence unless stated to do otherwise. The user must take care of refresh requirements.
Step 3) If the new desired clock frequency is below the min frequency supported by PLL‐on mode, turn the PLL off via an MRS command.
Step 4) Change the clock frequency and wait until clock is stabilized.
Step 5) If the new clock frequency is within the PLL on range and the PLL on state is desired, enable the PLL via an MRS Command if it is not already enabled.
Step 6) Perform address training if required.
Step 7) Perform WCK2CK training. As defined in the WCK2CK training process, if the PLL is enabled, then complete steps 7a and 7b: 7a) Reset the PLL by writing to the MRS register.
7b) Wait tLK clock cycles before issuing any commands to the GDDR5 SGRAM.
Step 8) Exit WCK2CK training.
Step 9) Perform READ and WRITE training, if required.
Step 10) GDDR5 SGRAM is ready for normal operation after any necessary interface training.
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5.21. DYNAMIC VOLTAGE SWITCHING (DVS)
GDDR5 SGRAM’s allow the supply voltage to be changed during the course of normal operation using the GDDR5 Dynamic Voltage Switching (DVS) feature. By using DVS the GDDR5 SGRAM’s power consump‐
tion can be reduced whenever only a fraction of the maximum available bandwidth is required by the cur‐
rent work load. DVS requires the GDDR5 SGRAM to be properly placed into self refresh before the voltage is changed from the exising stable voltage, Voriginal to the new desired voltage Vnew . The DVS procedure may also require changes to the VDD Range mode register using MR7 bits A8 and A9, depending on whether the feature is supported. The datasheet shall be consulted regarding the supported supply voltages for DVS, and any dependencies of AC timing parameters on the selected supply voltage.
Clock frequency changes can also take place before or after entering self refresh mode using the standard Clock Frequency Change procedure. A clock frequency change in conjunction with DVS is required if tCK is less than tCKmin supported by Vnew . In this case normal device operation including self refresh exit is not guaranteed without a frequency change. Changing the frequency while in self refresh is the most safe procedure.
Once self refresh is entered, tCKSRE must be met before the supply voltage is allowed to transition from Voriginal to Vnew. After VDD and VDDQ are stable at Vnew, tVS must be met to allow for internal voltages in the GDDR5 SGRAM to stabilize before self refresh mode may be exited. During the voltage transition the voltage must not go below Vmin of the lower voltage of either Voriginal or Vnew in order to prevent false chip reset. Vmin is the minimum voltage allowed by VDD or VDDQ in the DC operating conditions table. VREF shall continue to track VDDQ.
DVS Procedure
Step 1) Complete all operations and precharge all banks.
Step 2) Issue an MRS command to set VDD Range to proper values for Vnew. This step is only required when the VDD Range mode register field is supported by the GDDR5 SGRAM. Step 3) Enter self refresh mode. Self refresh entry procedure must be met.
Step 4) Wait required time tCKSRE before changing voltage to Vnew.
Step 5) Change VDD and VDDQ to Vnew.
Step 6) Wait required time tVS for voltage stabilization.
Step 7) Exit self refresh. The self refresh exit procedure must be met.
Step 8) Issue MRS commands to adjust mode register settings as desired (e.g. latencies, PLL on/off, CRC on/off, RDQS mode on/off).
Step 9) Perform any interface training as required.
Step 10) Continue normal operation.
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T0
T1
T2
Ta0
Tb0
Tb1
Tb2
Tc0
Td0
Voriginal
VDD,
VDDQ VSS, VSSQ
Vnew
Voltage ramp
tVS
CK#
CK
tCKSRE
CKE#
tRDSRE or tWRSRE
NOP
tXSRW
tXSNRW
tCPDED
tRP
CMD
tCKSRX
SRE
NOP
NOP
Enter Self‐Refresh Mode NOP
SRX
Exit Self‐ Refresh Mode
PREA
Valid
Donʹt Care
Self refresh exit requires WCK2CK training prior to any WRITE or READ operation
At least one REFRESH command shall be issued after tXSNRW for output driver and termination impedance updates Voriginal > Vnew shown as an example of a voltage change
Figure 76. DVS Sequence
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5.22. TEMPERATURE SENSOR
GDDR5 SGRAMs incorporate a temperature sensor with digital temperature readout function. This func‐
tion allows the controller to monitor the GDDR5 SGRAM die’s junction temperature and use this informa‐
tion to make sure the device is operated within the specified temperature range or to adjust interface timings relative to temperature changes over time.
The temperature sensor is enabled by bit A6 in Mode Register 7 (MR7). In this case the temperature read‐
out is valid after tTSEN. Hynix applies 10us to tTSEN.
The temperature readout uses the DRAM Info mode feature. The digital value is driven asynchronously on the DQ bus following the MRS command to Mode Register 3 (MR3) that sets bit A7 to 1 and bit A6 to 0. The temperature readout will be continuously driven until an MRS command sets both bits to 0. The GDDR5 SGRAM’s junction temperature is linearly encoded as shown in Table 35. Hynix has the read‐
out to a subset of six digital codes out of Table 35, corresponding to six temperature thresholds. Table 34 Temperature Sensor Readout Pattern
Binary Temperature Readout
Temperature [°C]
MF=0: DQ[5:0]
MF=1: DQ[31:26]
＜ 45
000000
55
000001
65
000011
75
000111
85
001111
95
011111
＞ 95
111111
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5.23. DUTY CYCLE CORRECTOR (DCC)
As GDDR5 SGRAMs can operate with the PLL off during normal operation, the use of a Duty Cycle Cor‐
rector (DCC) can correct for the duty cycle of the WCK. DCC can be used at any time, however, rising and falling edges of WCK can be shifted according to the DCC type. The DCC should be enabled before WCK training and should be run for tDCC in order to effectively correct any error. Table 35 DCC Timings
Parameter
Symbol
Min
Max
Unit
tDCC
150
‐
tCK
Required time for duty cycle corrector
DCC can correct the duty cycle error within the range of ± 100ps.
WCK#
WCK
CK#
CK
CMD
NOP
MRS
NOP
tWCKTMRS
DCC reset
NOP
tMRD
Enter WCK2CK
Training (reset WCK
divide by circuits)
NOP
NOP
tWCKTTR
MRS
NOP
tLK
tDCC
Start WCK2CK Phase
Training
PLL Reset
A.C.
MRS
tMRD
Enter WCK2CK
Training (sets data
synchronizers, resets
FIFO pointers) DCC start
DCC stop or not Figure 77. Timing Diagram of DCC Control Signals
DCC control signals
• DCC reset : The DCC reset is used to initialize the DCC code and should be issued anytime before the WCK enables (MRS7 A11:1, A10:0)
• DCC start : The DCC start is used to update the DCC code and should be issued anytime after the WCK is stable (MRS7 A11:0, A10:1)
• DCC stop : The DCC stop is used to make it stop to update the DCC code while the DCC code is held. This should be issued after enough time from DCC start if needs (MRS7 A11:0, A10:0)
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Table 36 DCC Control Signals
A11
A10
DCC
0
0
no DCC & DCC stop
0
1
DCC start
1
0
DCC reset
1
1
RFU
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6. OPERATING CONDITIONS
6.1. ABSOLUTE MAXIMUM RATINGS
Voltage on Vdd Supply
Relative to Vss................................................... ‐0.5V to +2.0V
Voltage on VddQ Supply
Relative to Vss .................................................. ‐0.5V to +2.0V
Voltage on Vref and Inputs
Relative to Vss .................................................. ‐0.5V to +2.0V
Voltage on I/O Pins
Relative to Vss .................................................. ‐0.5V to VddQ +0.5V
Storage Temperature (plastic) ............................ ‐55°C to +150°C
Short Circuit Output Current ............................. 50mA
*Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Table 37 Capacitance
PARAMETER
SYMBOL
MIN
MAX
UNITS
Delta Input/Output Capacitance: DQs, DBI#, EDC, WCK, WCK#
DCio
0
0.5
pF
Delta Input Capacitance: Command and Address
DCi1
0
0.5
pF
Delta Input Capacitance: CK, CK#
DCi2
0
0.3
pF
Input/Output Capacitance: DQs, DBI#, EDC, WCK, WCK#
Cio
1.2
1.9
pF
Input Capacitance: Command and Address
Ci1
0.9
1.6
pF
Input Capacitance: CK, CK#, WCK, WCK#
Ci2
0.9
1.6
pF
Input Capacitance: CKE#
Ci3
0.9
1.6
pF
NOTES
Table 38 Thermal Characteristics
Parameter
Description
Value
Thermal resistance junction to ambient
2s2p
Notes
45
33
oC/W
1,4,5 (at Tc 115oC)
30
oC/W
1,2,4,5
o
C/W
1,3
oC/W
1,6
1s
Theta_JA
Units
o
Theta_JB
Thermal resistance junction to board
12
Theta_JC
Thermal resistance junction to case
3
C/W
1,2,4,5
Notes: 1. Measurement procedures for each parameter must follow standard procedures defined in the current JEDEC JESD‐51 standard.
2. Theta_JA measured with the low and high thermal conductivity test board defined in JESD51‐9
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3. Theta_JB measured with the special boundary condition defined in JESD51‐8
4. Theta_JA should only be used for comparing the thermal performance of single package and not for system related junction.
5. Theta_JA is the natural convection junction‐to‐ambient air thermal resistance measured in one cubic foot sealed enclosure
as decribed in JESD 51‐2. The environment is sometimes refered to as “still‐air” although natural convection causes the air to move.
6. Theta_JC case surface is defined as the “outside surface of the package (case) closest to the chip mounting area when that
same surface is properly hear sunk” so as to minimize temperature variation across that surface.
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6.2. AC & DC CHARACTERISTICS
All GDDR5 SGRAMs are designed for 1.5V typical voltage supplies. The interface of GDDR5 with 1.5V VDDQ will follow the POD15 specification. All AC and DC values are measured at the ball.
Table 39 DC Operating Conditions
Symbol
Min
Typ
Max
Unit
Device Supply Voltage
Parameter
VDD
1.452
1.6
1.648
V
Note
1
Output Supply Voltage
VDDQ
1.452
1.6
1.648
V
1
Device Supply Voltage
VDD
1.455
1.5
1.545
V
2
Output Supply Voltage
VDDQ
1.455
1.5
1.545
V
2
Reference Voltage for DQ and DBI# pins
VREFD
0.69 * VDDQ
0.71 * VDDQ
V
3, 4
Reference Voltage for DQ and DBI# pins
VREFD2
0.49 * VDDQ
0.51 * VDDQ
V
3, 4, 5
External Reference Voltage for address and command
VREFC
0.69 * VDDQ
0.71 * VDDQ
V
6
DC Input Logic HIGH Voltage for address and command
VIHA (DC)
VREFC + 0.15
DC Input Logic LOW Voltage for address and command
VILA (DC)
DC Input Logic HIGH Voltage for DQ and DBI# pins with VREFD
VIHD (DC)
DC Input Logic LOW Voltage for DQ and DBI# pins with VREFD
VILD (DC)
DC Input Logic HIGH Voltage for DQ and DBI# pins with VREFD2
VIHD2 (DC)
DC Input Logic LOW Voltage for DQ and DBI# pins with VREFD2
VILD2 (DC)
Input Logic HIGH Voltage for RESET#, SEN, MF
VIHR
Input Logic LOW Voltage for RESET#, SEN, MF
VILR
Input logic HIGH voltage for EDC1/2 (x16 mode detect)
VIHX
Input logic LOW voltage for EDC1/2 (x16 mode detect)
VILX
Il
Input Leakage Current
Any Input 0V <= VIN <= VDDQ
(All other pins not under test = 0V) Output Leakage Current (DQs are disabled; 0V <= Vout <= VDDQ)
Output Logic LOW Voltage
V
VREFC ‐ 0.15
VREFD + 0.10
V
V
VREFD ‐ 0.10
VREFD2 + 0.30
V
V
VREFD2 ‐ 0.30
VDDQ ‐ 0.50
V
V
0.30
VDDQ ‐ 0.3 V
V
9
0.30
V
9
10
μA
Ioz
10
μA
VOL (DC)
0.62
V
Notes: 1. VDD/VDDQ 1.6V is for 6Gbps
2. GDDR5 SGRAMs are designed to tolerate PCB designs with separate VDD and VDDQ power regulators.
3. AC noise in the system is estimated at 50mV pk‐pk for the purpose of DRAM design.
4. Source of Reference Voltage and control of Reference Voltage for DQ and DBI# pins is determined by VREFD, Half VREFD, Auto VREFD, VREFD MERGE and VREFD Offsets mode registers.
5. VREFD Offsets are not supported with VREFD2.
6. External VREFC is to be provided by the controller as there is no other alternative supply.
7. DQ/DBI# input slew rate must be greater than or equal to 3V/ns. The slew rate is measured between VREFD crossing and VIHD(AC) or VILD(AC) or VREFD2 crossing and VIHD2(AC) or VILD2(AC).
8. ADR/CMD input slew rate must be greater than or equal to 3V/ns. The slew rate is measured between VREFC crossing and VIHA(AC) or VILA(AC).
9. VIHX and VILX define the voltage levels for the receiver that detects x32 or x16 mode with RESET# going High.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
124
H5GQ1H24AFR
Table 40 AC Operating Conditions
POD15
Parameter
Symbol
Min
AC Input Logic HIGH Voltage for address and command
VIHA (AC)
VREFC + 0.20
AC Input Logic LOW Voltage for address and command
VILA (AC)
AC Input Logic HIGH Voltage for DQ and DBI# pins with VREFD
VIHD (AC)
AC Input Logic LOW Voltage for DQ and DBI# pins with VREFD
VILD (AC)
AC Input Logic HIGH Voltage for DQ and DBI# pins with VREFD2
VIHD2 (AC)
AC Input Logic LOW Voltage for DQ and DBI# pins with VREFD2
VILD2 (AC)
Typ
Max
Unit
Note
V
VREFC ‐ 0.20
VREFD + 0.15
V
V
VREFD ‐ 0.15
VREFD2 + 0.40
V
V
VREFD2 ‐ 0.40
V
VDDQ
VOH
System Noise Margin (Power/Ground, Crosstalk, Signal Integrity Attenuation)
VIH (AC)
VIH (DC)
VREF + AC Noise
VREF + DC Noise
VREF ‐ DC Noise
VREF ‐ AC Noise
VIL (DC)
VIL (AC)
VIN (AC) ‐ Provides margin
between VOL (MAX) and
VIL (AC)
VOL (MAX)
Note: VREF, VIH, VIL refer to
whichever VREFxx (VREFD, VREFD2, or VREFC) is being used. Output
Input
Figure 78. Voltage Waveform
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
125
H5GQ1H24AFR
Table 41 Clock Input Operating Conditions
POD15
Parameter
Symbol
Min
Max
Unit
Note
VREFC + 0.10
V
1, 6
Clock Input Mid‐Point Voltage; CK and CK#
VMP (DC)
VREFC ‐ 0.10
Clock Input Differential Voltage; CK and CK#
VIDCK (DC)
0.22
V
4, 6
Clock Input Differential Voltage; CK and CK# VIDCK (AC)
0.40
V
2, 4, 6
V
Clock Input Differential Voltage; WCK and WCK#
VIDWCK (DC)
0.20
Clock Input Differential Voltage; WCK and WCK# VIDWCK (AC)
0.30
VIN
‐0.30
Clock Input Voltage Level; CK, CK#, WCK and WCK# single ended CK/CK# Single ended slew rate
WCK/WCK# Single ended slew rate
Clock Input Crossing Point Voltage; CK and CK#
Clock Input Crossing Point Voltage; WCK and WCK#
Allowed time before ringback of CK/WCK below VIDCK/WCK(AC)
5, 7
2, 5, 7
VDDQ + 0.30
CKslew
3
V/ns
9
WCKslew
3
V/ns
10
VIXCK (AC)
VREFC ‐ 0.12
VIXWCK (AC)
tDVAC
VREFD ‐ 0.10
VREFC + 0.12
VREFD + 0.10
V
2, 3, 6
V
2, 3, 7, 8
ps
11, 12, 13
Notes:
1. This provides a minimum of 0.9V to a maximum of 1.2V, and is nominally 70% of VDDQ with POD15. DRAM timings relative to CK cannot be guaranteed if these limits are exceeded.
2. For AC operations, all DC clock requirements must be satisfied as well.
3. The value of VIXCK and VIXWCK is expected to equal 70% VDDQ for the transmitting device and must track variations in the DC level of the same.
4. VIDCK is the magnitude of the difference between the input level in CK and the input level on CK#. The input reference level for signals other than CK and CK# is VREFC.
5. VIDWCK is the magnitude of the difference between the input level in WCK and the input level on WCK#. The input reference level for signals other than WCK and WCK# is either VREFD, VREFD2 or the internal VREFD.
6. The CK and CK# input reference level (for timing referenced to CK and CK#) is the point at which CK and CK# cross. Please refer to the applicable timings in the AC timings table (Table 44).
7. The WCK and WCK# input reference level (for timing referenced to WCK and WCK#) is the point at which WCK and WCK# cross. Please refer to the applicable timings in the AC Timings table (Table 44).
8. VREFD is either VREFD, VREFD2 or the internal VREFD.
9. The slew rate is measured between VREFC crossing and VIXCK(AC).
10. The slew rate is measured between VREFD crossing and VIXWCK(AC).
11. Figure illustrates the exact relationship between (CK‐CK#) or (WCK‐WCK#) and VID(AC), VID(DC) and tDVAC
12. Ringback below VID(DC) is not allowed.
13. tDVAC is not measured in and of itself as a compliance specification, but is relied upon in measurement of clock operating conditions and clock related parameters.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
126
H5GQ1H24AFR
Maximum Clock Level
CK
VMP (DC)
VIX(AC)
VID (DC)
VID (AC)
CK#
Minimum Clock Level
Figure 79. Clock Waveform
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
127
H5GQ1H24AFR
Differential Input Voltage (i.e. WCK ‐ WCK#, CK ‐ CK#)
tDVAC
VID (AC) MIN
VID (DC) MIN
0
half cycle
‐(VID (DC) MIN)
‐(VID (AC) MIN)
tDVAC
time
Figure 80. Definition of differential ac-swing and “time above ac-level” tDVAC
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
128
H5GQ1H24AFR
Table 42 IDD Specifications and Test Conditions
PARAMETER/CONDITION
SYMBOL
NOTES
One Bank Activate Precharge Current: tCK = tCK(min); tWCK = tWCK(min); tRC = tRC(min); CKE# = LOW; DQ, DBI# are HIGH; random bank and row addresses (4 address inputs set LOW) with ACT command
IDD0
1
One Bank Activate Read Precharge Current: tCK = tCK (min); tWCK = tWCK(min); tRC = tRC(min); CKE# = LOW; one bank activated; single read burst with 50% data toggle on each data transfer, with 4 outputs per data byte driven LOW; otherwise DQ, DBI# are HIGH; random bank, row and column addresses (4 address inputs set LOW) with ACT and READ commands; IOUT = 0mA
IDD1
1
Precharge Power‐down Current: tCK = tCK (min); tWCK = tWCK(min); all banks idle; CKE# = HIGH; all other inputs are HIGH; PLLs are off
IDD2P
Precharge Standby Current: tCK = tCK (min); tWCK = tWCK(min); all banks idle; CKE# = LOW; all other inputs are HIGH
IDD2N
Active Power‐down Current: tCK = tCK (min); tWCK = tWCK(min); one bank active; CKE# = HIGH; all other inputs are HIGH
IDD3P
Active Standby Current: tCK = tCK (min); tWCK = tWCK(min); one bank active; CKE# = LOW; all other inputs are HIGH
IDD3N
Read Burst Current: tCK = tCK (min); tWCK = tWCK(min); CKE# = LOW; one bank in each of the 4 bank groups activated; continuous read burst across bank groups with 50% data toggle on each data transfer, with 4 outputs per data byte driven LOW; random bank and column addresses (4 address inputs set LOW) with READ command; IOUT = 0mA
IDD4R
Write Burst Current: tCK = tCK (min); tWCK = tWCK(min); CKE# = LOW; one bank in each of the 4 bank groups activated; continuous write burst across bank groups with 50% data toggle on each data transfer, with 4 inputs per data byte set LOW; random bank and column addresses (4 address inputs set LOW) with WRITE command; no data mask
IDD4W
Refresh Current: tCK = tCK (min); tWCK = tWCK(min); tRFC = tRFC(min); CKE# = LOW; DQ, DBI# are HIGH; address inputs are HIGH
IDD5
Self Refresh Current: CKE# = HIGH; all other inputs are HIGH
IDD6
Four Bank Interleave Read Current: tCK = tCK(min); tWCK = tWCK(min); CKE# = LOW; one bank in each of the 4 bank groups activated and precharged at tRC(min); continuous read burst across bank groups with 50% data toggle on each data transfer, with 4 outputs per data byte driven LOW; random bank, row and column addresses (4 address inputs set LOW) with ACT and READ/
READA commands; IOUT = 0mA IDD7
1
NOTE: Min tRC or tRFC for IDD measurements is the smallest multiple of tCK that meets the minimum of the absolute value for the respective parameter. Common Test conditions:
1) 2) 3) 4) 5) 6) 7) 8) 9) Device is configured to x32 mode
ABI and DBI are enabled
All ODTs are enabled with ZQ/2
PLLs are enabled unless otherwise noted
CRC is enabled for READs and WRITEs, and the EDC hold pattern is programmed to’1010’
Bank groups are enabled if required for device operation at tCK(min)
Address inputs include ABI# pin
Each data byte consists of eight DQs and one DBI# pin
DESELECT condition during idle command cycles
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
129
H5GQ1H24AFR
Table 43. IDD SPECIFICATIONS AND CONDITIONS
1. × 32 Mode IDD
Symbol
4.0Gbps
4.5Gbps
5.0Gbps
5.5Gbps
6.0Gbps
Units
IDD0
550
590
630
670
710
mA
IDD1
590
630
670
710
750
mA
IDD2P
240
260
280
300
320
mA
IDD2N
260
280
300
320
340
mA
IDD3P
385
405
425
445
465
mA
IDD3N
540
580
620
660
700
mA
IDD4W
1300
1430
1560
1690
1820
mA
IDD4R
1370
1500
1630
1760
1890
mA
IDD5
545
580
615
650
685
mA
IDD6
60
60
60
60
60
mA
IDD7
900
1000
1100
1200
1300
mA
2. × 16 Mode IDD
Symbol
4.0Gbps
4.5Gbps
5.0Gbps
5.5Gbps
6.0Gbps
Units
IDD0
370
400
420
450
490
mA
IDD1
390
420
450
480
520
mA
IDD2P
170
175
185
195
210
mA
IDD2N
190
200
210
230
250
mA
IDD3P
250
260
275
290
310
mA
IDD3N
350
370
390
420
450
mA
IDD4W
830
910
990
1070
1160
mA
IDD4R
850
930
1010
1090
1080
mA
IDD5
350
370
390
420
450
mA
IDD6
60
60
60
60
60
mA
IDD7
660
710
770
840
910
mA
Rev. 1.0 /Nov. 2009
130
H5GQ1H24AFR
Table 44. AC Timings (@1.5V)
6.0Gbps
PARAMETER a, b
5.5Gbps
SYMBOL
UNIT
MIN
NOTES
MAX
MIN
MAX
0.667
2
0.727
2
0.667
20
0.727
20
0.470
0.530
tCK
C
C
CK and WCK Timings
PLL on
CK Clock cycle time
tCK
PLL off
ns
CK Clock high-level width
tCH
0.470
0.530
CK Clock low-level width
tCL
0.470
0.530
0.470
0.530
tCK
Min CK Clock half period
tHP
0.470
-
0.470
-
tCK
Max CK Clock frequency with bank groups disabled
fCKBG
-
1500
-
1375
MHz
d
Max CK Clock frequency with bank groups enabled
and tCCDL=3tCK
fCKBG4
-
1500
-
1375
MHz
d
Max CK Clock frequency with WCK2CK alignment
at pins
fCKPIN
-
1500
-
1375
MHz
e
fCKRDQS
-
TBD
-
TBD
MHz
f
fCKVREFD2
-
TBD
-
TBD
MHz
g
fCKAUTOSYNC
-
1500
-
1375
MHz
h
fCKLF
-
900
-
900
MHz
i
0.333
1
0.364
1
ns
j
0.333
10
0.364
10
Max CK Clock frequency in RDQS Mode
Max CK Clock frequency for device operation with
VREFD2
Max CK Clock frequency for WCK-to-CK
auto synchronization in WCK2CK training mode
Max CK Clock frequency for device operation with
Low Frequency Mode enabled
PLL on
WCK Clock cycle time
tWCK
PLL off
WCK Clock high-level width
tWCKH
0.470
0.530
0.470
0.530
tWCK
k,l
WCK Clock low-level width
tWCKL
0.470
0.530
0.470
0.530
tWCK
k,l
Min WCK Clock half period
tWCKHP
0.470
-
0.470
-
tWCK
0.25
-
ns
Command and Address Input Timings
Command input setup time
Command input hold time
tCMDS
0.25
-
m,n
tCMDH
0.25
-
0.25
-
ns
m,n
tCMDPW
0.60
-
0.65
-
ns
m,n,o
Address input setup time
tAS
0.1
-
0.1
-
ns
m,n,p
Address input hold time
tAH
0.1
-
0.1
-
ns
m,n,p
tAPW
0.3
-
0.32
-
ns
m,n,o,p
Command input pulse width
Address input pulse width
Rev. 1.0 /Nov. 2009
131
H5GQ1H24AFR
Table 44. AC Timings (@1.5V)
6.0Gbps
PARAMETER a, b
5.5Gbps
SYMBOL
UNIT
MIN
MAX
MIN
MAX
NOTES
WCK2CK Timings
WCK stop to MRS delay for entering WCK2CK
training
tWCK2MRS
3
-
3
-
ns
MRS to WCK restart delay after entering WCK2CK
training
tMRSTWCK
10
-
10
-
ns
WCK start to WCK phase movement delay
tWCK2TR
10
-
10
-
tCK
WCK phase change to phase detector out delay
tWCK2PH
5
-
5
-
ns
WCK Clock high-level width during WCK2CK
training
tWCKHTR
0.42
0.58
0.42
0.58
tWCK
k,l,r
WCK Clock low-level width during WCK2CK
training
tWCKLTR
0.42
0.58
0.42
0.58
tWCK
k,l,r
-0.2
0.2
-0.2
0.2
-0.2
0.2
-0.2
0.2
ns
s
PLL off;MR6A0=0
(at phase detector)
-0.2
0.2
-0.2
0.2
PLL off;MR6A0=1
(at pins)
-0.2
0.2
-0.2
0.2
-0.25
0.25
-0.25
0.25
tCK
-0.25
0.25
-0.25
0.25
ns
-0.4
0.4
-0.4
0.4
tCK
-0.4
0.4
-0.4
0.4
ns
PLL on;MR6A0=0
(at phase detector)
WCK2CK offset when zero
offset at phase detector or at
pins
WCK2CK phase offset upon
WCK2CK training exit
PLL on;MR6A0=1
(at pins)
tWCK2CKPIN
MR6A0=0
(at phase detector)
tWCK2CKSYNC
MR6A0=1
(at pins)
MR6A0=0
(at phase detector)
WCK2CK phase offset
t
tWCK2CK
MR6A0=1
(at pins)
q
u
PLL Input and Output Timings
WCK to DQ/DBI# offset for
input data
WCK to DQ/DBI#/EDC/
offset for output data
DQ/DBI# input pulse width
Rev. 1.0 /Nov. 2009
PLL on
0.7
1.7
0.7
1.7
0.7
1.7
0.7
1.7
1.1
2.2
1.1
2.2
1.1
2.2
1.1
2.2
0.15
-
0.164
-
tWCK2DQI
PLL off
PLL on
tWCK2DQO
PLL off
tDIPW
ns
v
ns
w,x
ns
y,z,aa
132
H5GQ1H24AFR
Table 44. AC Timings (@1.5V)
6.0Gbps
PARAMETER a, b
DQ/DBI# data input valid
window
5.5Gbps
SYMBOL
PLL on
MIN
MAX
MIN
MAX
0.1
-
0.11
-
0.1
-
0.11
-
tDIVW
PLL off
UNIT
NOTES
ns
y,z,ab
DQ/DBI# input skew within double byte
tDQDQI
-0.1
0.1
-0.1
0.1
ns
ac
DQ/DBI#/EDC output skew within double byte
tDQDQO
-0.125
0.125
-0.125
0.125
ns
ad
40
-
40
-
ns
Row Access Timings
Active to Active command period
Active to PRECHARGE command period
tRC
tRAS
28
9*tREFI
28
9*tREFI
ns
Active to READ command delay
tRCDRD
12
-
12
-
ns
ae
Active to WRITE command delay
tRCDWR
10
-
10
-
ns
Active to RDTR command delay
tRCDRTR
10
-
10
-
ns
Active to WRTR command delay
tRCDWTR
10
-
10
-
ns
Active to LDFF command delay
tRCDLTR
10
-
10
-
ns
REFRESH to RDTR or WRTR command delay
tREFTR
10
-
10
-
ns
Active bank A to Active bank B command delay same
bank group
tRRDL
5.5
-
5.5
-
ns
af
Active bank A to Active bank B command delay
different bank groups
tRRDS
5.5
-
5.5
-
ns
ag
Four bank activate window
tFAW
23
-
23
-
ns
ah
Thirty two bank activate window
t32AW
184
-
184
-
ns
ai
READ to PRECHARGE command delay same bank
with bank groups enabled
tRTPL
2
-
2
-
tCK
aj
READ to PRECHARGE command delay same bank
with bank groups disabled
tRTPS
2
-
2
-
tCK
ak
PRECHARGE to PRECHARGE command delay
tPPD
1
-
1
-
ns
PRECHARGE command period
tRP
12
-
12
-
ns
WRITE recovery time
tWR
12
-
12
-
ns
Auto precharge write recovery + precharge time
tDAL
24
-
24
-
tCK
al
Column Access Timings
RD/WR bank A to RD/WR bank B command delay
same bank group
tCCDL
3
-
3
-
tCK
af,am
RD/WR bank A to RD/WR bank B command delay
different bank groups
tCCDS
2
-
2
-
tCK
ag,an
Rev. 1.0 /Nov. 2009
133
H5GQ1H24AFR
Table 44. AC Timings (@1.5V)
6.0Gbps
PARAMETER a, b
5.5Gbps
SYMBOL
UNIT
MIN
MAX
MIN
MAX
LDFF to LDFF command cycle time
tLTLTR
4
-
4
-
tCK
LDFF(111) to LDFF command cycle time
tLTL7TR
4
-
4
-
tCK
LDFF(111) to RDTR command cycle delay
tLTRTR
4
-
4
-
tCK
NOTES
ao
READ or RDTR to LDFF command delay
tRDTLT
4
-
4
-
tCK
WRITE to LDFF command delay
tWRTLT
WL+5
-
WL+5
-
tCK
WRTR to RDTR command delay
tWTRTR
WLtWLmin
-
WLtWLmin
-
tCK
WRITE to WRTR command delay
tWRWTR
WL+tCR
CWL+2
-
WL+tCR
CWL+2
-
tCK
Internal WRITE to READ command delay same bank
group
tWTRL
5
-
5
-
ns
af
Internal WRITE to READ command delay different
bank groups
tWTRS
5
-
5
-
ns
ag
tRTW
[CLmrs+(BL
/4)+2WLmrs]*tC
K
-
[CLmrs+(BL
/4)+2WLmrs]*tC
K
-
tCK
ap
tWL
4
7
4
7
tCK
aq
READ or RDTR to WRITE or WRTR command
delay
Write Latency
Power-Down and Refresh Timings
CKE# min high and low pulse width
tCKE
16
-
14
-
tCK
Valid CK Clock required after self refresh entry
tCKSRE
16
-
14
-
tCK
Valid CK Clock required before self refresh exit
tCKSRX
16
-
14
-
tCK
READ to SELF REFRESH ENTRY or POWER
DOWN ENTRY command delay
tRDSRE
CL+2tCK
-
CL+2tCK
-
tCK
ar
WRITE to SELF REFRESH ENTRY or POWER
DOWN ENTRY command delay
tWRSRE
TBD
-
TBD
-
tCK
as
tRFC
65
-
65
-
ns
Exit self refresh to non-READ/WRITE command
delay
tXSNRW
tRFC
-
tRFC
-
ns
Exit self refresh to READ/WRITE command delay
tXSRW
tRFC+
tRCD
-
tRFC+
tRCD
-
tCK
tREF
-
32
-
32
ms
-
3.9
-
3.9
-
1.9
-
1.9
REFRESH command period
Refresh period
Average periodic refresh
interval
Min Power down entry to exit time
Rev. 1.0 /Nov. 2009
8k rows
tREFI
16k rows
tPD
us
16
14
at
au
tCK
134
H5GQ1H24AFR
Table 44. AC Timings (@1.5V)
6.0Gbps
PARAMETER a, b
NOP/DESELECT commands required upon powerdown and self refresh entry
Power down exit time
5.5Gbps
SYMBOL
UNIT
MIN
MAX
MIN
MAX
tCPDED
4
-
3
-
tCK
tXPN
17
-
15
-
tCK
NOTES
Miscellaneous Timings
MODE REGISTER SET command period
PLL enabled to PLL lock delay
PLL standby time
DVS voltage stabilization time
tMRD
4
-
4
-
tCK
tLK
-
5000
-
5000
tCK
tSTDBTY
-
TBD
-
TBD
us
tVS
TBD
-
TBD
-
us
REFRESH to calibration update complete delay
tKO
-
40
-
40
ns
Active termination setup time
tATS
10
-
10
-
ns
Active termination hold time
tATH
10
-
10
-
ns
READ to data out delay in address training mode
tADR
0.5*tCK+
0
0.5*tCK+
10
0.5*tCK+
0
0.5*tCK+
10
tCK
Address training exit to DQ in ODT state delay
tADZ
-
0.5*tCK+
10
-
0.5*tCK+
10
ns
Vendor ID on
tWRIDON
-
11
-
11
ns
Venodr ID off
tWRIDOFF
-
11
-
11
ns
tTSEN
10
-
10
-
us
Temperature sensor enable delay
Rev. 1.0 /Nov. 2009
ax
q
135
H5GQ1H24AFR
Table 44. AC Timings (@1.5V)
5.0Gbps
PARAMETER a, b
4.5Gbps
SYMBOL
UNIT
MIN
MAX
MIN
MAX
0.8
2
0.89
2
0.8
20
0.89
20
0.470
0.530
0.470
0.530
NOTES
CK and WCK Timings
PLL on
CK Clock cycle time
tCK
PLL off
CK Clock high-level width
tCH
ns
tCK
C
C
CK Clock low-level width
tCL
0.470
0.530
0.470
0.530
tCK
Min CK Clock half period
tHP
0.470
-
0.470
-
tCK
Max CK Clock frequency with bank groups disabled
fCKBG
-
1250
-
1125
MHz
d
Max CK Clock frequency with bank groups enabled
and tCCDL=3tCK
fCKBG4
-
1250
-
1125
MHz
d
Max CK Clock frequency with WCK2CK alignment
at pins
fCKPIN
-
1250
-
1125
MHz
e
fCKRDQS
-
TBD
-
TBD
MHz
f
fCKVREFD2
-
TBD
-
TBD
MHz
g
fCKAUTOSYNC
-
1250
-
1125
MHz
h
fCKLF
-
900
-
900
MHz
i
0.4
1
0.444
1
ns
j
0.4
10
0.444
10
Max CK Clock frequency in RDQS Mode
Max CK Clock frequency for device operation with
VREFD2
Max CK Clock frequency for WCK-to-CK
auto synchronization in WCK2CK training mode
Max CK Clock frequency for device operation with
Low Frequency Mode enabled
PLL on
WCK Clock cycle time
tWCK
PLL off
WCK Clock high-level width
tWCKH
0.470
0.530
0.470
0.530
tWCK
k,l
WCK Clock low-level width
tWCKL
0.470
0.530
0.470
0.530
tWCK
k,l
Min WCK Clock half period
tWCKHP
0.470
-
0.470
-
tWCK
Command and Address Input Timings
Command input setup time
Command input hold time
tCMDS
0.25
-
0.25
-
ns
m,n
tCMDH
0.25
-
0.25
-
ns
m,n
tCMDPW
0.7
-
0.7
-
ns
m,n,o
Address input setup time
tAS
0.1
-
0.125
-
ns
m,n,p
Address input hold time
tAH
0.1
-
0.125
-
ns
m,n,p
tAPW
0.36
-
0.4
-
ns
m,n,o,p
Command input pulse width
Address input pulse width
Rev. 1.0 /Nov. 2009
136
H5GQ1H24AFR
Table 44. AC Timings (@1.5V)
5.0Gbps
PARAMETER a, b
4.5Gbps
SYMBOL
UNIT
MIN
MAX
MIN
MAX
NOTES
WCK2CK Timings
WCK stop to MRS delay for entering WCK2CK
training
tWCK2MRS
3
-
3
-
ns
MRS to WCK restart delay after entering WCK2CK
training
tMRSTWCK
10
-
10
-
ns
WCK start to WCK phase movement delay
tWCK2TR
10
-
10
-
tCK
WCK phase change to phase detector out delay
tWCK2PH
5
-
5
-
ns
WCK Clock high-level width during WCK2CK
training
tWCKHTR
0.42
0.58
0.42
0.58
tWCK
k,l,r
WCK Clock low-level width during WCK2CK
training
tWCKLTR
0.42
0.58
0.42
0.58
tWCK
k,l,r
-0.2
0.2
-0.2
0.2
-0.2
0.2
-0.2
0.2
ns
s
PLL off;MR6A0=0
(at phase detector)
-0.2
0.2
-0.2
0.2
PLL off;MR6A0=1
(at pins)
-0.2
0.2
-0.2
0.2
-0.25
0.25
-0.25
0.25
tCK
-0.25
0.25
-0.25
0.25
ns
-0.4
0.4
-0.4
0.4
tCK
-0.4
0.4
-0.4
0.4
ns
PLL on;MR6A0=0
(at phase detector)
WCK2CK offset when zero
offset at phase detector or at
pins
WCK2CK phase offset upon
WCK2CK training exit
PLL on;MR6A0=1
(at pins)
tWCK2CKPIN
MR6A0=0
(at phase detector)
tWCK2CKSYNC
MR6A0=1
(at pins)
MR6A0=0
(at phase detector)
WCK2CK phase offset
t
tWCK2CK
MR6A0=1
(at pins)
q
u
PLL Input and Output Timings
WCK to DQ/DBI# offset for
input data
WCK to DQ/DBI#/EDC/
offset for output data
DQ/DBI# input pulse width
Rev. 1.0 /Nov. 2009
PLL on
0.7
1.7
0.7
1.7
0.7
1.7
0.7
1.7
1.1
2.2
1.1
2.2
1.1
2.2
1.1
2.2
0.18
-
0.197
-
tWCK2DQI
PLL off
PLL on
tWCK2DQO
PLL off
tDIPW
ns
v
ns
w,x
ns
y,z,aa
137
H5GQ1H24AFR
Table 44. AC Timings (@1.5V)
5.0Gbps
PARAMETER a, b
DQ/DBI# data input valid
window
4.5Gbps
SYMBOL
PLL on
MIN
MAX
MIN
MAX
0.12
-
0.13
-
0.12
-
0.13
-
tDIVW
PLL off
UNIT
NOTES
ns
y,z,ab
DQ/DBI# input skew within double byte
tDQDQI
-0.1
0.1
-0.1
0.1
ns
ac
DQ/DBI#/EDC output skew within double byte
tDQDQO
-0.125
0.125
-0.125
0.125
ns
ad
40
-
40
-
ns
Row Access Timings
Active to Active command period
Active to PRECHARGE command period
tRC
tRAS
28
9*tREFI
28
9*tREFI
ns
Active to READ command delay
tRCDRD
12
-
12
-
ns
ae
Active to WRITE command delay
tRCDWR
10
-
10
-
ns
Active to RDTR command delay
tRCDRTR
10
-
10
-
ns
Active to WRTR command delay
tRCDWTR
10
-
10
-
ns
Active to LDFF command delay
tRCDLTR
10
-
10
-
ns
REFRESH to RDTR or WRTR command delay
tREFTR
10
-
10
-
ns
Active bank A to Active bank B command delay same
bank group
tRRDL
5.5
-
5.5
-
ns
af
Active bank A to Active bank B command delay
different bank groups
tRRDS
5.5
-
5.5
-
ns
ag
Four bank activate window
tFAW
23
-
23
-
ns
ah
Thirty two bank activate window
t32AW
184
-
184
-
ns
ai
READ to PRECHARGE command delay same bank
with bank groups enabled
tRTPL
2
-
2
-
tCK
aj
READ to PRECHARGE command delay same bank
with bank groups disabled
tRTPS
2
-
2
-
tCK
ak
PRECHARGE to PRECHARGE command delay
tPPD
1
-
1
-
ns
PRECHARGE command period
tRP
12
-
12
-
ns
WRITE recovery time
tWR
12
-
12
-
ns
Auto precharge write recovery + precharge time
tDAL
24
-
24
-
tCK
al
Column Access Timings
RD/WR bank A to RD/WR bank B command delay
same bank group
tCCDL
3
-
3
-
tCK
af,am
RD/WR bank A to RD/WR bank B command delay
different bank groups
tCCDS
2
-
2
-
tCK
ag,an
Rev. 1.0 /Nov. 2009
138
H5GQ1H24AFR
Table 44. AC Timings (@1.5V)
5.0Gbps
PARAMETER a, b
4.5Gbps
SYMBOL
UNIT
MIN
MAX
MIN
MAX
LDFF to LDFF command cycle time
tLTLTR
4
-
4
-
tCK
LDFF(111) to LDFF command cycle time
tLTL7TR
4
-
4
-
tCK
LDFF(111) to RDTR command cycle delay
tLTRTR
4
-
4
-
tCK
NOTES
ao
READ or RDTR to LDFF command delay
tRDTLT
4
-
4
-
tCK
WRITE to LDFF command delay
tWRTLT
WL+5
-
WL+5
-
tCK
WRTR to RDTR command delay
tWTRTR
WLtWLmin
-
WLtWLmin
-
tCK
WRITE to WRTR command delay
tWRWTR
WL+tCR
CWL+2
-
WL+tCR
CWL+2
-
tCK
Internal WRITE to READ command delay same bank
group
tWTRL
5
-
5
-
ns
af
Internal WRITE to READ command delay different
bank groups
tWTRS
5
-
5
-
ns
ag
tRTW
[CLmrs+(BL
/4)+2WLmrs]*tC
-
[CLmrs+(BL
/4)+2WLmrs]*tC
-
tCK
ap
3
7
tCK
aq
READ or RDTR to WRITE or WRTR command
delay
K
Write Latency
tWL
3
K
7
Power-Down and Refresh Timings
CKE# min high and low pulse width
tCKE
12
-
11
-
tCK
Valid CK Clock required after self refresh entry
tCKSRE
12
-
11
-
tCK
Valid CK Clock required before self refresh exit
tCKSRX
12
-
11
-
tCK
READ to SELF REFRESH ENTRY or POWER
DOWN ENTRY command delay
tRDSRE
CL+2tCK
-
CL+2tCK
-
tCK
ar
WRITE to SELF REFRESH ENTRY or POWER
DOWN ENTRY command delay
tWRSRE
TBD
-
TBD
-
tCK
as
tRFC
65
-
65
-
ns
Exit self refresh to non-READ/WRITE command
delay
tXSNRW
tRFC
-
tRFC
-
ns
Exit self refresh to READ/WRITE command delay
tXSRW
tRFC+
tRCD
-
tRFC+
tRCD
-
tCK
tREF
-
32
-
32
ms
-
3.9
-
3.9
-
1.9
-
1.9
REFRESH command period
Refresh period
Average periodic refresh
interval
Min Power down entry to exit time
Rev. 1.0 /Nov. 2009
8k rows
tREFI
16k rows
tPD
us
12
11
at
au
tCK
139
H5GQ1H24AFR
Table 44. AC Timings (@1.5V)
5.0Gbps
PARAMETER a, b
NOP/DESELECT commands required upon powerdown and self refresh entry
Power down exit time
4.5Gbps
SYMBOL
UNIT
MIN
MAX
MIN
MAX
tCPDED
3
-
3
-
tCK
tXPN
13
-
11
-
tCK
NOTES
Miscellaneous Timings
MODE REGISTER SET command period
PLL enabled to PLL lock delay
PLL standby time
DVS voltage stabilization time
tMRD
4
-
4
-
tCK
tLK
-
5000
-
5000
tCK
tSTDBTY
-
TBD
-
TBD
us
tVS
TBD
-
TBD
-
us
REFRESH to calibration update complete delay
tKO
-
40
-
40
ns
Active termination setup time
tATS
10
-
10
-
ns
Active termination hold time
tATH
10
-
10
-
ns
READ to data out delay in address training mode
tADR
0.5*tCK+
0
0.5*tCK+
10
0.5*tCK+
0
0.5*tCK+
10
tCK
Address training exit to DQ in ODT state delay
tADZ
-
0.5*tCK+
10
-
0.5*tCK+
10
ns
Vendor ID on
tWRIDON
-
11
-
11
ns
Venodr ID off
tWRIDOFF
-
11
-
11
ns
tTSEN
10
-
10
-
us
Temperature sensor enable delay
Rev. 1.0 /Nov. 2009
ax
q
140
H5GQ1H24AFR
Table 44. AC Timings (@1.5V)
4.0Gbps
PARAMETER a, b
-
SYMBOL
UNIT
MIN
MAX
MIN
NOTES
MAX
CK and WCK Timings
PLL on
CK Clock cycle time
1
2
1
20
tCK
PLL off
ns
CK Clock high-level width
tCH
0.470
0.530
tCK
C
CK Clock low-level width
tCL
0.470
0.530
tCK
C
Min CK Clock half period
tHP
0.470
-
tCK
Max CK Clock frequency with bank groups disabled
fCKBG
-
1000
MHz
d
Max CK Clock frequency with bank groups enabled
and tCCDL=3tCK
fCKBG4
-
1000
MHz
d
Max CK Clock frequency with WCK2CK alignment
at pins
fCKPIN
-
1000
MHz
e
fCKRDQS
-
TBD
MHz
f
fCKVREFD2
-
TBD
MHz
g
fCKAUTOSYNC
-
100
MHz
h
fCKLF
-
800
MHz
i
0.5
1
ns
j
0.5
10
0.470
0.530
tWCK
k,l
k,l
Max CK Clock frequency in RDQS Mode
Max CK Clock frequency for device operation with
VREFD2
Max CK Clock frequency for WCK-to-CK
auto synchronization in WCK2CK training mode
Max CK Clock frequency for device operation with
Low Frequency Mode enabled
PLL on
WCK Clock cycle time
tWCK
PLL off
WCK Clock high-level width
tWCKH
WCK Clock low-level width
tWCKL
0.470
0.530
tWCK
Min WCK Clock half period
tWCKHP
0.470
-
tWCK
Command and Address Input Timings
Command input setup time
tCMDS
0.25
-
ns
m,n
Command input hold time
tCMDH
0.25
-
ns
m,n
tCMDPW
0.7
-
ns
m,n,o
tAS
0.125
-
ns
m,n,p
tAH
0.125
-
ns
m,n,p
tAPW
0.45
-
ns
m,n,o,p
Command input pulse width
Address input setup time
Address input hold time
Address input pulse width
Rev. 1.0 /Nov. 2009
141
H5GQ1H24AFR
Table 44. AC Timings (@1.5V)
4.0Gbps
PARAMETER a, b
-
SYMBOL
UNIT
MIN
MAX
MIN
NOTES
MAX
WCK2CK Timings
WCK stop to MRS delay for entering WCK2CK
training
tWCK2MRS
3
-
ns
MRS to WCK restart delay after entering WCK2CK
training
tMRSTWCK
10
-
ns
WCK start to WCK phase movement delay
tWCK2TR
10
-
tCK
WCK phase change to phase detector out delay
tWCK2PH
5
-
ns
WCK Clock high-level width during WCK2CK
training
tWCKHTR
0.42
0.58
tWCK
k,l,r
WCK Clock low-level width during WCK2CK
training
tWCKLTR
0.42
0.58
tWCK
k,l,r
-0.2
0.2
-0.2
0.2
ns
s
PLL off;MR6A0=0
(at phase detector)
-0.2
0.2
PLL off;MR6A0=1
(at pins)
-0.2
0.2
-0.25
0.25
tCK
-0.25
0.25
ns
-0.4
0.4
tCK
-0.4
0.4
ns
PLL on;MR6A0=0
(at phase detector)
WCK2CK offset when zero
offset at phase detector or at
pins
WCK2CK phase offset upon
WCK2CK training exit
PLL on;MR6A0=1
(at pins)
tWCK2CKPIN
MR6A0=0
(at phase detector)
tWCK2CKSYNC
MR6A0=1
(at pins)
MR6A0=0
(at phase detector)
WCK2CK phase offset
t
tWCK2CK
MR6A0=1
(at pins)
q
u
PLL Input and Output Timings
WCK to DQ/DBI# offset for
input data
WCK to DQ/DBI#/EDC/
offset for output data
DQ/DBI# input pulse width
Rev. 1.0 /Nov. 2009
PLL on
0.7
1.7
0.7
1.7
1.1
2.2
1.1
2.2
0.225
-
tWCK2DQI
PLL off
PLL on
tWCK2DQO
PLL off
tDIPW
ns
v
ns
w,x
ns
y,z,aa
142
H5GQ1H24AFR
Table 44. AC Timings (@1.5V)
4.0Gbps
PARAMETER a, b
DQ/DBI# data input valid
window
-
SYMBOL
PLL on
MIN
MAX
0.15
-
0.15
-
tDIVW
PLL off
MIN
UNIT
NOTES
ns
y,z,ab
MAX
DQ/DBI# input skew within double byte
tDQDQI
-0.1
0.1
ns
ac
DQ/DBI#/EDC output skew within double byte
tDQDQO
-0.125
0.125
ns
ad
40
-
ns
Row Access Timings
Active to Active command period
Active to PRECHARGE command period
tRC
tRAS
28
9*tREFI
ns
Active to READ command delay
tRCDRD
12
-
ns
ae
Active to WRITE command delay
tRCDWR
10
-
ns
Active to RDTR command delay
tRCDRTR
10
-
ns
Active to WRTR command delay
tRCDWTR
10
-
ns
Active to LDFF command delay
tRCDLTR
10
-
ns
REFRESH to RDTR or WRTR command delay
tREFTR
10
-
ns
Active bank A to Active bank B command delay same
bank group
tRRDL
5.5
-
ns
af
Active bank A to Active bank B command delay
different bank groups
tRRDS
5.5
-
ns
ag
Four bank activate window
tFAW
23
-
ns
ah
Thirty two bank activate window
t32AW
184
-
ns
ai
READ to PRECHARGE command delay same bank
with bank groups enabled
tRTPL
2
-
tCK
aj
READ to PRECHARGE command delay same bank
with bank groups disabled
tRTPS
2
-
tCK
ak
PRECHARGE to PRECHARGE command delay
tPPD
1
-
ns
PRECHARGE command period
tRP
12
-
ns
WRITE recovery time
tWR
12
-
ns
Auto precharge write recovery + precharge time
tDAL
24
-
tCK
al
Column Access Timings
RD/WR bank A to RD/WR bank B command delay
same bank group
tCCDL
3
-
tCK
af,am
RD/WR bank A to RD/WR bank B command delay
different bank groups
tCCDS
2
-
tCK
ag,an
Rev. 1.0 /Nov. 2009
143
H5GQ1H24AFR
Table 44. AC Timings (@1.5V)
4.0Gbps
PARAMETER a, b
-
SYMBOL
UNIT
MIN
MAX
MIN
NOTES
MAX
LDFF to LDFF command cycle time
tLTLTR
4
-
tCK
LDFF(111) to LDFF command cycle time
tLTL7TR
4
-
tCK
LDFF(111) to RDTR command cycle delay
tLTRTR
4
-
tCK
READ or RDTR to LDFF command delay
tRDTLT
4
-
tCK
WRITE to LDFF command delay
tWRTLT
WL+5
-
tCK
WRTR to RDTR command delay
tWTRTR
WLtWLmin
-
tCK
WRITE to WRTR command delay
tWRWTR
WL+tCR
CWL+2
-
tCK
Internal WRITE to READ command delay same bank
group
tWTRL
5
-
ns
af
Internal WRITE to READ command delay different
bank groups
tWTRS
5
-
ns
ag
tRTW
[CLmrs+(BL
/4)+2WLmrs]*tC
-
tCK
ap
7
tCK
aq
READ or RDTR to WRITE or WRTR command
delay
ao
K
Write Latency
tWL
3
Power-Down and Refresh Timings
CKE# min high and low pulse width
tCKE
10
-
tCK
Valid CK Clock required after self refresh entry
tCKSRE
10
-
tCK
Valid CK Clock required before self refresh exit
tCKSRX
10
-
tCK
READ to SELF REFRESH ENTRY or POWER
DOWN ENTRY command delay
tRDSRE
CL+2tCK
-
tCK
ar
WRITE to SELF REFRESH ENTRY or POWER
DOWN ENTRY command delay
tWRSRE
TBD
-
tCK
as
tRFC
65
-
ns
Exit self refresh to non-READ/WRITE command
delay
tXSNRW
tRFC
-
ns
Exit self refresh to READ/WRITE command delay
tXSRW
tRFC+
tRCD
-
tCK
tREF
-
32
ms
-
3.9
-
1.9
REFRESH command period
Refresh period
Average periodic refresh
interval
Min Power down entry to exit time
Rev. 1.0 /Nov. 2009
8k rows
tREFI
16k rows
tPD
us
10
at
au
tCK
144
H5GQ1H24AFR
Table 44. AC Timings (@1.5V)
4.0Gbps
PARAMETER a, b
NOP/DESELECT commands required upon powerdown and self refresh entry
Power down exit time
-
SYMBOL
UNIT
MIN
MAX
MIN
tCPDED
2
-
tCK
tXPN
10
-
tCK
NOTES
MAX
Miscellaneous Timings
MODE REGISTER SET command period
tMRD
4
-
tCK
tLK
-
5000
tCK
tSTDBTY
-
TBD
us
DVS voltage stabilization time
tVS
TBD
-
us
REFRESH to calibration update complete delay
tKO
-
40
ns
Active termination setup time
tATS
10
-
ns
Active termination hold time
tATH
10
-
ns
READ to data out delay in address training mode
tADR
0.5*tCK+
0
0.5*tCK+
10
tCK
Address training exit to DQ in ODT state delay
tADZ
-
0.5*tCK+
10
ns
Vendor ID on
tWRIDON
-
11
ns
Venodr ID off
tWRIDOFF
-
11
ns
tTSEN
10
-
us
PLL enabled to PLL lock delay
PLL standby time
Temperature sensor enable delay
Rev. 1.0 /Nov. 2009
ax
q
145
H5GQ1H24AFR
Table 44. AC Timings (@1.35V)
3.2Gbps
PARAMETER a, b
-
SYMBOL
UNIT
MIN
MAX
MIN
NOTES
MAX
CK and WCK Timings
PLL on
CK Clock cycle time
1.25
2
1.25
20
tCK
PLL off
ns
CK Clock high-level width
tCH
0.470
0.530
tCK
C
CK Clock low-level width
tCL
0.470
0.530
tCK
C
Min CK Clock half period
tHP
0.470
-
tCK
Max CK Clock frequency with bank groups disabled
fCKBG
-
800
MHz
d
Max CK Clock frequency with bank groups enabled
and tCCDL=3tCK
fCKBG4
-
800
MHz
d
Max CK Clock frequency with WCK2CK alignment
at pins
fCKPIN
-
800
MHz
e
fCKRDQS
-
TBD
MHz
f
fCKVREFD2
-
TBD
MHz
g
fCKAUTOSYNC
-
800
MHz
h
fCKLF
-
700
MHz
i
0.625
1
ns
j
0.625
10
0.470
0.530
tWCK
k,l
k,l
Max CK Clock frequency in RDQS Mode
Max CK Clock frequency for device operation with
VREFD2
Max CK Clock frequency for WCK-to-CK
auto synchronization in WCK2CK training mode
Max CK Clock frequency for device operation with
Low Frequency Mode enabled
PLL on
WCK Clock cycle time
tWCK
PLL off
WCK Clock high-level width
tWCKH
WCK Clock low-level width
tWCKL
0.470
0.530
tWCK
Min WCK Clock half period
tWCKHP
0.470
-
tWCK
Command and Address Input Timings
Command input setup time
tCMDS
0.3
-
ns
m,n
Command input hold time
tCMDH
0.3
-
ns
m,n
tCMDPW
1.0
-
ns
m,n,o
tAS
0.15
-
ns
m,n,p
Command input pulse width
Address input setup time
Address input hold time
Address input pulse width
Rev. 1.0/Nov. 2009
tAH
0.15
-
ns
m,n,p
tAPW
0.55
-
ns
m,n,o,p
146
H5GQ1H24AFR
Table 44. AC Timings (@1.35V)
3.2Gbps
PARAMETER a, b
-
SYMBOL
UNIT
MIN
MAX
MIN
NOTES
MAX
WCK2CK Timings
WCK stop to MRS delay for entering WCK2CK
training
tWCK2MRS
3
-
ns
MRS to WCK restart delay after entering WCK2CK
training
tMRSTWCK
10
-
ns
WCK start to WCK phase movement delay
tWCK2TR
10
-
tCK
WCK phase change to phase detector out delay
tWCK2PH
5
-
ns
WCK Clock high-level width during WCK2CK
training
tWCKHTR
0.42
0.58
tWCK
k,l,r
WCK Clock low-level width during WCK2CK
training
tWCKLTR
0.42
0.58
tWCK
k,l,r
-0.2
0.2
-0.2
0.2
ns
s
PLL off;MR6A0=0
(at phase detector)
-0.2
0.2
PLL off;MR6A0=1
(at pins)
-0.2
0.2
-0.25
0.25
tCK
-0.25
0.25
ns
-0.4
0.4
tCK
-0.4
0.4
ns
PLL on;MR6A0=0
(at phase detector)
WCK2CK offset when zero
offset at phase detector or at
pins
WCK2CK phase offset upon
WCK2CK training exit
PLL on;MR6A0=1
(at pins)
tWCK2CKPIN
MR6A0=0
(at phase detector)
tWCK2CKSYNC
MR6A0=1
(at pins)
MR6A0=0
(at phase detector)
WCK2CK phase offset
t
tWCK2CK
MR6A0=1
(at pins)
q
u
PLL Input and Output Timings
WCK to DQ/DBI# offset for
input data
WCK to DQ/DBI#/EDC/
offset for output data
DQ/DBI# input pulse width
Rev. 1.0/Nov. 2009
PLL on
0.7
1.7
0.7
1.7
1.1
2.2
1.1
2.2
0.295
-
tWCK2DQI
PLL off
PLL on
tWCK2DQO
PLL off
tDIPW
ns
v
ns
w,x
ns
y,z,aa
147
H5GQ1H24AFR
Table 44. AC Timings (@1.35V)
3.2Gbps
PARAMETER a, b
DQ/DBI# data input valid
window
-
SYMBOL
PLL on
MIN
MAX
0.19
-
0.19
-
tDIVW
PLL off
MIN
UNIT
NOTES
ns
y,z,ab
MAX
DQ/DBI# input skew within double byte
tDQDQI
-0.1
0.1
ns
ac
DQ/DBI#/EDC output skew within double byte
tDQDQO
-0.125
0.125
ns
ad
48
-
ns
Row Access Timings
Active to Active command period
Active to PRECHARGE command period
tRC
tRAS
32
9*tREFI
ns
Active to READ command delay
tRCDRD
16
-
ns
ae
Active to WRITE command delay
tRCDWR
14
-
ns
Active to RDTR command delay
tRCDRTR
16
-
ns
Active to WRTR command delay
tRCDWTR
14
-
ns
Active to LDFF command delay
tRCDLTR
14
-
ns
REFRESH to RDTR or WRTR command delay
tREFTR
14
-
ns
Active bank A to Active bank B command delay same
bank group
tRRDL
12
-
ns
af
Active bank A to Active bank B command delay
different bank groups
tRRDS
7
-
ns
ag
Four bank activate window
tFAW
30
-
ns
ah
Thirty two bank activate window
t32AW
245
-
ns
ai
READ to PRECHARGE command delay same bank
with bank groups enabled
tRTPL
2
-
tCK
aj
READ to PRECHARGE command delay same bank
with bank groups disabled
tRTPS
2
-
tCK
ak
PRECHARGE to PRECHARGE command delay
tPPD
1
-
ns
PRECHARGE command period
tRP
16
-
ns
WRITE recovery time
tWR
16
-
ns
Auto precharge write recovery + precharge time
tDAL
32
-
tCK
al
Column Access Timings
RD/WR bank A to RD/WR bank B command delay
same bank group
tCCDL
3
-
tCK
af,am
RD/WR bank A to RD/WR bank B command delay
different bank groups
tCCDS
2
-
tCK
ag,an
Rev. 1.0/Nov. 2009
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H5GQ1H24AFR
Table 44. AC Timings (@1.35V)
3.2Gbps
PARAMETER a, b
-
SYMBOL
UNIT
MIN
MAX
MIN
NOTES
MAX
LDFF to LDFF command cycle time
tLTLTR
4
-
tCK
LDFF(111) to LDFF command cycle time
tLTL7TR
4
-
tCK
LDFF(111) to RDTR command cycle delay
tLTRTR
4
-
tCK
READ or RDTR to LDFF command delay
tRDTLT
4
-
tCK
WRITE to LDFF command delay
tWRTLT
WL+5
-
tCK
WRTR to RDTR command delay
tWTRTR
WLtWLmin
-
tCK
WRITE to WRTR command delay
tWRWTR
WL+tCR
CWL+2
-
tCK
Internal WRITE to READ command delay same bank
group
tWTRL
5
-
ns
af
Internal WRITE to READ command delay different
bank groups
tWTRS
5
-
ns
ag
tRTW
[CLmrs+(BL
/4)+2WLmrs]*tC
-
tCK
ap
7
tCK
aq
READ or RDTR to WRITE or WRTR command
delay
ao
K
Write Latency
tWL
3
Power-Down and Refresh Timings
CKE# min high and low pulse width
tCKE
11
-
tCK
Valid CK Clock required after self refresh entry
tCKSRE
11
-
tCK
Valid CK Clock required before self refresh exit
tCKSRX
11
-
tCK
READ to SELF REFRESH ENTRY or POWER
DOWN ENTRY command delay
tRDSRE
CL+2tCK
-
tCK
ar
WRITE to SELF REFRESH ENTRY or POWER
DOWN ENTRY command delay
tWRSRE
TBD
-
tCK
as
tRFC
120
-
ns
Exit self refresh to non-READ/WRITE command
delay
tXSNRW
tRFC
-
ns
Exit self refresh to READ/WRITE command delay
tXSRW
tRFC+
tRCD
-
tCK
tREF
-
32
ms
-
3.9
-
1.9
REFRESH command period
Refresh period
Average periodic refresh
interval
Min Power down entry to exit time
Rev. 1.0/Nov. 2009
8k rows
tREFI
16k rows
tPD
us
11
at
au
tCK
149
H5GQ1H24AFR
Table 44. AC Timings (@1.35V)
3.2Gbps
PARAMETER a, b
NOP/DESELECT commands required upon powerdown and self refresh entry
Power down exit time
-
SYMBOL
UNIT
MIN
MAX
MIN
tCPDED
2
-
tCK
tXPN
10
-
tCK
NOTES
MAX
Miscellaneous Timings
MODE REGISTER SET command period
tMRD
4
-
tCK
tLK
-
5000
tCK
tSTDBTY
-
TBD
us
DVS voltage stabilization time
tVS
TBD
-
us
REFRESH to calibration update complete delay
tKO
-
40
ns
Active termination setup time
tATS
10
-
ns
Active termination hold time
tATH
10
-
ns
READ to data out delay in address training mode
tADR
0.5*tCK+
0
0.5*tCK+
10
tCK
Address training exit to DQ in ODT state delay
tADZ
-
0.5*tCK+
10
ns
Vendor ID on
tWRIDON
-
11
ns
Venodr ID off
tWRIDOFF
-
11
ns
tTSEN
10
-
us
PLL enabled to PLL lock delay
PLL standby time
Temperature sensor enable delay
ax
q
a. All parameters assume proper device initialization.
b. Tests for AC timing may be considered at norminal supply voltage levels, but the related specification and device operation are guaranteed for the full
voltage and temperature range specified.
c. CK and CK# single-ended input slew rate must be greater than or equal to 3V/ns. The slew rate is measured between VREFC crossing and VIXCK(AC)
d. Parameter fCKBG4 is required for those devices supporting both 3*tCK and 4*tCK setting for bank groups. Devices supporting only 3*tCK or 4*tCK
need only to specify fCKBG.
e. Parameter fCKPIN applies when the alignment point in MR6, bit A0 is set to “at pins”, the phase difference between the WCK and CK clocks at the
DRAM pins is within tWCK2CKSYNC or tWCK2CK for pin mode and no phase search in WCK2CK training is performed.
f. Parameter fCKRDQS applies when RDQS mode is enabled in AR3, bit A5.
g. Parameter fCKBREFD2 applies when the data input reference voltage in MR7, bit A7 (Half VREFD) is set to VREFD2.
h. Parameter fCKAUTOSYNC applies when WCK2CK Auto Synchronization is enabled in MR7, bit A4.
i. Parameter fCKLF applies when Low Frequency Mode is enabled in MR7, bit A3.
j. By definition the norminal WCK clock cycle time always is 1/2 of the CK clock cycle time (not including jitter).
k. WCK and WCK# single-ended input slew rate must be greater than or equal to 3V/ns. The slew rate is measured between VREFD crossing and
VIXWCK(AC).
Rev. 1.0/Nov. 2009
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H5GQ1H24AFR
l. The phase relationship between WCK/WCK# and CK/CK# clocks must meet the tWCK2CK specification.
m. Command and address input timings are referenced to VREFC.
n. Command and address input slew rate must be greater than or equal to 3V/ns. The slew rate is measured between VREFC crossing and VIHA(AC)
or VILA(AC).
o. Command and address input pulse widths are design targets. The value will be characterized but not tested on each device.
p. Address input timings are only valid with ABI beging enabled and a maximum of 4 address input driven LOW.
q. Parameter may be specified as a combination of tCK and ns.
r. Parameters tWCKHTR and tWCKLTR specify the max. allowed WCK clock-to-clock phase shift during WCK2CK training. For READ and WRITE
bursts use tWCKH and tWCKL.
s. Parameter tWCK2CKPIN defines the WCK2CK phase offset range at the CK and WCK pins for ideal (phase=0 °) clock alignment at the
GDDR5 SGRAM’s phase detector (when the alignment point in MR6, bit A0 is set to “at phase detector”), or at the WCK and CK pins (when the
alignment in MR6, bit A0 is set to “at pins”). The minimum and maximum values could be negative or positive numbers, depending on the selected
WCK2CK alignment point, PLL-on or PLL-off mode and design implementation.
t. Parameter tWCK2CKSYNC defines the max. phase offset from the ideal (phase = 0 °) clock alignment at the GDDR5 SGRAM’s phase
detector (when the alignment point in MR6, bit A0 is set to “at the phase detector”), or at the WCK and CK pins (when the alignment point
in MR6, bit A0 is set to “at pins”), where the internal logic synchronizes the CK and WCK clocks; it is expected to be a fraction of tWCK2CK.
u. Parameter tWCK2CK defines the max. phase offset from the ideal (phase = 0 °) clock alignment at the GDDR5 SGRAM’s phase detector
(when the alignment point in MR6, bit A0 is set to “at phase detector”) or at the WCK and CK pins (when the alignment point in MR6, bit A0 is set to
“at pins”), for stable device operation.
v. Parameter tWCK2DQI defines the WCK to DQ/DBI# time delay range for WRITEs for PLL-on and PLL-off mode. The minimum and maximum values
could be negative or positive numbers, depending on design implementation and PLL-on or PLL-off mode. They also vary across PVT.
Data training is required to determine the actual tWCK2DQI value for reliable WRITE operation.
w. Parameter tWCK2DQO defines the WCK to DQ/DBI# time delay range for READs for PLL-on and PLL-off mode. The minimum and maxium values
could be negative or positive numbers, depending on design implementation and PLL-on or PLL-off mode. They also vary across PVT.
Data training is required to determind the actual tWCK2DQO value for reliable READ operation.
x. Outputs measured with equivalent load terminated with 60 Ohms to VDDQ
y. DQ/DBI# input timings are valid only with DBI being enabled and a maximum of 4 data inputs per byte driven LOW.
z. Data input slew rate must be greater than or equal to 3V/ns. The slew rate is measured between VREFD crossing and VIHD(AC) or VILD(AC).
aa. The data input pulse width, tDIPW, defines the minimum positive or negative input pulse width for any worst-case channel required for proper
propagation of an external signal to the receiver. tDIPW is measured at the pins. tDIPW is independent of the PLL mode.
In general tDIPW is larger than tDIVW
ab. The data input valid width, tDIVW, defines the time region where input data must be valid for reliable data capture at the receiver for any one worst
case channel. It accounts for jitter between data and clock at the latching point introduced in the path between DARM pads and the latching point.
Any additional jitter introduced into the source signals (e.g. within the system before the DRAM pad) must be accounted for in the final timing
budget together with the chosen PLL mode and bandwidth. tDIVW is measured at the pins. tDIVW is defined for PLL off and on mode separately.
In the case of PLL on, tDIVW must be specified for each supported bandwidth. In general, tDIVW is smaller than tDIPW.
ac. tDQDQI defines the maximum skew among all DQ/DBI# inputs of a double byte (when configured to × 32 mode) or a single byte (when
configured to × 16 mode) under worst case conditions. Parameter tWCK2DQI defines the mean value of the earliest and latest DQ/DBI# pin,
tDQDQI(min) the negative offset to tWCK2DQI for the earliest DQ/DBI# pin and tDQDQI(max) the positive offset to tWCK2DQI for the latest
DQ/DBI# pin.
ad. tDQDQO defines the maximum skew among all DQ/DBI# outputs of a double byte (when configured to × 32mode) or a single byte (when
configured to × 16 mode) under worst case conditions. Parameter tWCK2DQO defines the mean value of of the earliest and latest DQ/DBI#
/EDC pin, tDQDQO(min) the negative offset to tWCK2DQO for earliest DQ/DBI#/EDC pin and tDQDQO(max) the positive offset to tWCK2DQO
for the latest DQ/DBI#/EDC pin.
ae. For READs and WRITEs with AUTO PRECHARGE enabled the device will hold off the internal PRECHARGE until tRAS(min) has been satisfied.
af. Parameter applies when bank groups are enabled and consecutive commands access the same bank group.
ag. Parameter applies when bank groups are disabled or consecutive commands access different bank group.
ah. Not more than 4 ACTIVE commands are allowed within period.
ai. Not more than 32 ACTIVE commands are allowed within t32AW period. The parameter need not to be specified in case t32AW(min) would not be
greater than 8*tFAW(min).
aj. Parameter applies when bank groups are enabled and READ and PRECHARGE commands access the same bank.
ak. Parameter applies when bank groups are disabled or READ and PRECHARGE commands access the same bank.
al. tDAL = (tWR/tCK) + ( tRP/tCK). For each of the terms, if not already an integer, round up to the next integer.
am. tCCDL is either for gapless consecutive READ or gapless consecutive WRITE commands
an. tCCDS is either for gapless consecutive READ or RDTR (any combination), gapless consecutive WRITE, or gapless consecutive WRTR commands.
ao. The min. value does not exceed 8 tCK
ap. tRTW is not a device limit but determined by the system bus turnaround time. The difference between tWCK2DQO and tWCK2DQI shall be considered
in the calculation of the bus turnaround time.
Rev. 1.0 /Nov. 2009
151
H5GQ1H24AFR
aq. The WRITE latency WLmrs cna be set to 3 to 7 clocks. When the WRITE latency is set to small values (3 ~ 4 clocks), the input buffers are always on,
reducing the latency but adding power. When the WRITE latency is set to larger values (5 ~ 7 clocks), the input buffers are turned on with the WRITE
command, thus saving power.
ar. Read data including CRC data must have been clocked out before entering self refresh or power down mode.
as. Write data must have been written to the memory core and CRC data must have been clocked out before entering self refresh or power down mode.
at. Time for WCK2CK training and data training not included.
au. A maximum of 8 consecutive REFRESH commands can be posted to a GDDR5 SGRAM device, meaning that the maximum absolute interval
between any REFRESH command and the next REFRESH command is 9*tREFI.
av. Replaces parameter tLK when PLL Fast Lock has been neabled prior to the PLL enable or reset.
aw. Replaces parameter tLK when PLL Standby has been enabed and the WCK clock frequency has not charged while in standby mode.
ax. The PLL standby time tSTDBY ismeasured from self refresh entry until after self refresh exit a subsequent PLL reset is given (with PLL Standby
enabled)
Rev. 1.0 /Nov. 2009
152
H5GQ1H24AFR
6.3 CLOCK-TO-DATA TIMING SENSITIVITY
The availability of clock‐to‐data (WCK2DQ) timing sensitivity information provides the controller the opportunity to anticipate the impact to timings from variations in environmental conditions (such as changes in voltage or temperature) allowing the controller to take corrective action if necessary (e.g. realigning WCK and DQ). Variations in relative timing between WCK and data are reported for READ and WRITE paths. This speci‐
fication calls out one zone each for VDDQ, VDD, and Tcase temperature over a specified range. Vendors may choose to provide information for additional zones covering, in total, a wider range or a finer granu‐
larity or both. However, within a given zone if an approximated value (i.e. the specified slope) deviates from the charac‐
terized slope to such a degree that the approximated WCK‐to‐DQ time delay would be in error by more than 5% of one UI relative to the characterized delay then the splitting of this zone into more than one zone is required. All zones and their associated specified slopes must form a continuous piece‐wise‐linear curve such that, after calibration during normal operation, traversing the approximated curve (i.e. the set of specified slopes) does not lead to time delay errors in excess of the 5% of one UI.
Tables 45, 46, and 47 below describe the minimum set of defined zones.
Table 45. VDDQ Voltage Zone
Zone_VQ1
VDDQ High
VDDQ Low
Notes
VDDQmax
VDDQmin
a
a. VDDQ(max) is the maximum specified operating voltage. VDDQ(min) is the minimum specified operating
voltage.
Table 46. VDD Voltage Zone
Zone_VD1
VDD High
VDD Low
Notes
VDDmax
VDDmin
a
a. VDD(max) is the maximum specified operating voltage. VDD(min) is the minimum specified operating
voltage.
Table 47. Tcase Temperature Zone
Zone_T1
Tcase High
Tcase Low
Notes
Tcasemax
10°C
a
a. Tcase(max) is the maximum specified operating temperature.
As noted, variations in relative timing are reported for READ and WRITE paths. Tables 48,49 and 50 below
provide information for READ timings while Tables 51,52 and 53 provide information for WRITE timings
Rev. 1.0 /Nov. 2009
153
H5GQ1H24AFR
Table 48. WCK-to-Data READ Timing Sensitivity to VDDQ
Parameter
Symbol
WCK2DQO Sensitivity to variations in VDDQ for zone_VQ1
PLL on
PLL off
tO2VQSensZ1
Values
Units
Notes
ps/V
ab
TBD
TBD
,
a. Calculation of tO2VQSensZ1 is performed as follows: tO2VQSensZ1 equals the quantity (tWCK2DQO(Zone_VQ1(max)) ‐ tWCK2DQO(Zone_VQ1(min))) divided by (VDDQ(Zone_VQ1(max)) ‐ VDDQ(Zone_VQ1(min))) = (tWCK2DQO(VDDQ(max)) ‐ tWCK2DQO(VDDQ(min))) / (VDDQ(max) ‐ VDDQ(min)). b. VDD(typ), Tcase = 85°C, worst‐case process corner.
Table 49. WCK-to-Data READ Timing Sensitivity to VDD
Parameter
Symbol
PLL on
WCK2DQO Sensitivity to variations in VDD for zone_VD1
PLL off
tO2VDSensZ1
Values
Units
Notes
ps/V
a,b
TBD
TBD
a. Calculation of tO2VDSensZ1 is performed as follows: tO2VDSensZ1 equals the quantity (tWCK2DQO(Zone_VD1(max)) ‐ tWCK2DQO(Zone_VD1(min))) divided by (VDD(Zone_VD1(max)) ‐ VDD(Zone_VD1(min))) = (tWCK2DQO(VDD(max)) ‐ tWCK2DQO(VDD(min))) / (VDD(max) ‐ VDD(min)). b. VDDQ(typ), Tcase = 85°C, worst‐case process corner.
Table 50. WCK-to-Data READ Timing Sensitivity to Tcase
Parameter
Symbol
PLL on
WCK2DQO Sensitivity to variations in Tcase for zone_T1
PLL off
tO2TSensZ1
Values
Units
Notes
ps/°C
ab
TBD
TBD
,
a. Calculation of tO2TSensZ1 is performed as follows: tO2TSensZ1 equals the quantity (tWCK2DQO(Zone_T1(max)) ‐ tWCK2DQO(Zone_T1(min))) divided by (Tcase(Zone_T1(max)) ‐ Tcase(Zone_T1(min))) = (tWCK2DQO(Tcase(max)) ‐ tWCK2DQO(Tcase(min))) / (Tcase(max) ‐ Tcase(min)).
b. VDDQ(typ), VDD(typ), worst‐case process corner.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
154
H5GQ1H24AFR
Tables 51, 52 and 53 below provide information for WRITE timings.
.
Table 51. WCK-to-Data WRITE Timing Sensitivity to VDDQ
Parameter
Symbol
PLL on
WCK2DQI Sensitivity to variations in VDDQ for zone_VQ1
PLL off
tI2VQSensZ1
Values
Units
Notes
ps/V
a,b
TBD
TBD
a. Calculation of tI2VQSensZ1 is performed as follows: tI2VQSensZ1 equals the quantity (tWCK2DQI(Zone_VQ1(max)) ‐ tWCK2DQI(Zone_VQ1(min))) divided by (VDDQ(Zone_VQ1(max)) ‐ VDDQ(Zone_VQ1(min))) = (tWCK2DQI(VDDQ(max)) ‐ tWCK2DQI(VDDQ(min))) / (VDDQ(max) ‐ VDDQ(min)).
b. VDD(typ), Tcase = 85°C, worst‐case process corner.
Table 52. WCK-to-Data WRITE Timing Sensitivity to VDD
Parameter
Symbol
PLL on
WCK2DQI Sensitivity to variations in VDD for zone_VD1
PLL off
tI2VDSensZ1
Values
Units
Notes
ps/V
a,b
TBD
TBD
a. Calculation of tO2VDSensZ1 is performed as follows: tI2VDSensZ1 equals the quantity (tWCK2DQI(Zone_VD1(max)) ‐ tWCK2DQI(Zone_VD1(min))) divided by (VDD(Zone_VD1(max)) ‐ VDD(Zone_VD1(min))) = (tWCK2DQI(VDD(max)) ‐ tWCK2DQI(VDD(min))) / (VDD(max) ‐ VDD(min)). b. VDDQ(typ), Tcase = 85°C, worst‐case process corner.
Table 53. WCK-to-Data WRITE Timing Sensitivity to Tcase
Parameter
Symbol
PLL on
WCK2DQI Sensitivity to variations in Tcase for zone_T1
PLL off
tI2TSensZ1
Values
Units
Notes
ps/°C
a,b
TBD
TBD
a. Calculation of tI2TSensZ1 is performed as follows: tI2TSensZ1 equals the quantity (tWCK2DQI(Zone_T1(max)) ‐ tWCK2DQI(Zone_T1(min))) divided by (Tcase(Zone_T1(max)) ‐ Tcase(Zone_T1(min))) = (tWCK2DQI(Tcase(max)) ‐ tWCK2DQI(Tcase(min))) / (Tcase(max) ‐ Tcase(min)). b. VDDQ(typ), VDD(typ), worst‐case process corner.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
7. PACKAGE SPECIFICATION 1
2
VSSQ
DQ1
VSSQ
DQ0
VPP,
VDDQ
DQ3
VDDQ
DQ2
VSSQ
EDC0
VSSQ
VSSQ
VDDQ
DBI0#
VSSQ
DQ5
VSSQ
VDDQ
DQ7
VDD
VSS
MF
3
4
BYTE 0
5
6
7
8
9
10
11
12
13
BYTE 1
14
A
VREFD
DQ8
VSSQ
DQ9
VSSQ
VSS
B
VSS
DQ10
VDDQ
DQ11
VDDQ
VDD
C
VDD
VSSQ
VSSQ
EDC1
VSSQ
VDDQ WCK01 WCK01#
D
VSS
VDD
VDDQ
DBI1#
VDDQ
DQ4
VDDQ
E
VDDQ
DQ12
VSSQ
DQ13
VSSQ
VDDQ
DQ6
VSSQ
F
VSSQ
DQ14
VDDQ
DQ15
VDDQ
VDDQ
RAS#
VDD
VSS
G
VSS
VDD
VDDQ
VDD
VSSQ
VDDQ
A10
A0
A9
A1
H
BA3
A3
BA0
A2
VDDQ
VSSQ
VSS
ABI#
A12
RFU,
NC
J
SEN
CK#
CK
ZQ
VREFC
A8
A7
A11
A6
K
BA1
A5
BA2
A4
VDDQ
VSSQ
VSS
VDD
VSS
L
VSS
VDD
WE#
VDDQ
VDD
RESET# CKE#
NC
CS#
VSS
VSSQ
VDDQ
VDD
VDDQ
CAS#
VDDQ
DQ31
VDDQ
DQ30
VSSQ
M
VSSQ
DQ22
VDDQ
DQ23
VDDQ
VSSQ
DQ29
VSSQ
DQ28
VDDQ
N
VDDQ
DQ20
VSSQ
DQ21
VSSQ
VDDQ
DBI3#
VDDQ WCK23 WCK23#
P
VSS
VDD
VDDQ
DBI2#
VDDQ
VSSQ
EDC3
VSSQ
VDD
R
VDD
VSSQ
VSSQ
EDC2
VSSQ
VDDQ
DQ27
VDDQ
DQ26
VSS
T
VSS
DQ18
VDDQ
DQ19
VDDQ
VSSQ
DQ25
VSSQ
DQ24
U
VREFD
DQ16
VSSQ
DQ17
VSSQ
BYTE 3
VSSQ
VPP,
NC
x32 mode: ON
x16 mode: ON
x32 mode: ON
x16 mode: OFF
BYTE 2
Note) Top View (as seen thru package), MF = LOW (MF = 0)
Figure 81. GDDR5 SGRAM 170ball BGA Ball-out MF=0
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1
2
3
4
BYTE 3
5
VSSQ
DQ25
VSSQ
DQ24
VPP,
VDDQ
DQ27
VDDQ
DQ26
VSSQ
EDC3
VSSQ
VDDQ
DBI3#
VSSQ
6
7
8
9
10
11
12
13
BYTE 2
14
A
VREFD
DQ16
VSSQ
DQ17
VSSQ
VSS
B
VSS
DQ18
VDDQ
DQ19
VDDQ
VDD
C
VDD
VSSQ
VSSQ
EDC2
VSSQ
VDDQ WCK23 WCK23#
D
VSS
VDD
VDDQ
DBI2#
VDDQ
DQ29
VSSQ
DQ28
VDDQ
E
VDDQ
DQ20
VSSQ
DQ21
VSSQ
VDDQ
DQ31
VDDQ
DQ30
VSSQ
F
VSSQ
DQ22
VDDQ
DQ23
VDDQ
VDD
VDDQ
CAS#
VDD
VSS
G
VSS
VDD
WE#
VDDQ
VDD
VSS
VSSQ
VDDQ
A8
A7
A11
A6
H
BA1
A5
BA2
A4
VDDQ
VSSQ
VSS
ABI#
A12
RFU,
NC
J
SEN
CK#
ZQ
VREFC
VDDQ
VSSQ
VSS
CS#
VDDQ
VDD
MF
RESET# CKE#
VSSQ
NC
CK
VSS
VSSQ
VDDQ
A10
A0
A9
A1
K
BA3
A3
BA0
A2
VDD
VDDQ
RAS#
VDD
VSS
L
VSS
VDD
VDDQ
DQ7
VDDQ
DQ6
VSSQ
M
VSSQ
DQ14
VDDQ
DQ15
VDDQ
VSSQ
DQ5
VSSQ
DQ4
VDDQ
N
VDDQ
DQ12
VSSQ
DQ13
VSSQ
VDDQ
DBI0#
VDDQ WCK01 WCK01#
P
VSS
VDD
VDDQ
DBI1#
VDDQ
VSSQ
EDC0
VSSQ
VSSQ
VDD
R
VDD
VSSQ
VSSQ
EDC1
VSSQ
VDDQ
DQ3
VDDQ
DQ2
VSS
T
VSS
DQ10
VDDQ
DQ11
VDDQ
VSSQ
DQ1
VSSQ
DQ0
U
VREFD
DQ8
VSSQ
DQ9
VSSQ
BYTE 0
VPP,
NC
x32 mode: ON
x16 mode: ON
x32 mode: ON
x16 mode: OFF
BYTE 1
Note) Top View (as seen thru package), MF = HIGH (MF = 1)
Figure 82. GDDR5 SGRAM 170ball BGA Ball-out MF=1
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7.1. SIGNALS
Table 54. Ball-out Description
SYMBOL
TYPE
DESCRIPTION
CK, CK#
Input
WCK01, WCK01#, WCK23, WCK23#
CKE#
Input
Clock: CK and CK# are differential clock inputs. Command inputs are latched on the rising edge of CK. Address inputs are latched on the rising edge of CK and the rising edge of CK#. All latencies are referenced to CK. CK and CK# are externally terminated.
Write Clocks: WCK and WCK# are differential clocks used for WRITE data capture and READ data output. WCK01/WCK01# is associated with DQ0‐DQ15, DBI0#, DBI1#, EDC0 and EDC1. WCK23/WCK23# is associated with DQ16‐DQ31, DBI2#, DBI3#, EDC2 and EDC3.
Input
CS#
Input
RAS#, CAS#,WE#
BA0–BA3
Input
A0–A11 (A12)
Input
DQ0–31
DBI#0‐3
I/O
I/O
EDC0‐3
Output
Input
ABI#
Input
VddQ
VssQ
Supply
Supply
Vdd
Vss
Vrefd
Supply
Supply
Supply
Vrefc
Vpp
Supply
Supply
MF
ZQ
Reference
Reference
Clock Enable: CKE# LOW activates and CKE# HIGH deactivates the internal clock, device input buffers, and output drivers. Taking CKE# HIGH provides PRECHARGE POWER‐
DOWN and SELF REFRESH operations (all banks idle), or ACTIVE POWER‐DOWN (row ACTIVE in any bank). CKE# must be maintained LOW throughout read and write accesses. The value of CKE# latched at power‐up with RESET# going High determines the termination value of the address and command inputs.
Chip Select: CS# LOW enables and CS# HIGH disables the command decoder. All commands are masked when CS# is registered HIGH. CS# provides for external rank selection on systems with multiple ranks. CS# is considered part of the command code.
Command Inputs: RAS#, CAS#, and WE# (along with CS#) define the command being entered. Bank Address Inputs: BA0 ‐ BA3 define to which bank an ACTIVE, READ, WRITE, or PRECHARGE command is being applied. BA0‐BA3 also determine which Mode Register is accessed with an MODE REGISTER SET command. BA0‐BA3 are sampled with the rising edge of CK.
Address Inputs: A0‐A11 (A12) provide the row address for ACTIVE commands, A0‐A5 (A6) provide the column address and A8 defines the auto precharge function for READ/WRITE commands, to select one location out of the memory array in the respective bank. A8 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A8 LOW, bank selected by BA0‐BA3) or all banks (A8 HIGH). The address inputs also provide the op‐code during a MODE REGISTER SET command and the data bits during a LDFF command. A8‐A11(A12) are sampled with the rising edge of CK and A0‐A7 are sampled with the rising edge of CK#.
Data Input/Output: 32‐bit data bus
Data Bus Inversion. DBI#0 is associated with DQ0‐DQ7, DBI#1 is associated with DQ8‐DQ15, DBI#2 is associated with DQ16‐DQ23, DBI#3 is associated with DQ24‐DQ31.
Error Detection Code. The calculated CRC data is transmitted on these pins. In addition these pins drive a ‘hold’ pattern when idle and can be used as an RDQS function. EDC0 is associated with DQ0‐DQ7, EDC1 is associated with DQ8‐DQ15, EDC2 is associated with DQ16‐DQ23, EDC3 is associated with DQ24‐DQ31.
Address Bus Inversion I/O Power Supply. Isolated on the die for improved noise immunity.
I/O Ground: Isolated on the die for improved noise immunity.
Power Supply
Ground
Reference Voltage for DQ, DBI#, and EDC pins.
Reference Voltage for address and command pins.
Pump Voltage
Mirror Function: VDDQ CMOS input. Must be tied to power or ground.
External Reference Pin for autocalibration
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Table 54. Ball-out Description
SYMBOL
TYPE
RFU
NC
SEN
RESET#
DESCRIPTION
Reserved for Future Use
Input
Input
Not connected
Scan enable. VDDQ CMOS input. Must be tied to the ground when not in use.
Reset Pin. VDDQ CMOS input. RESET# Low asynchronously initiates a full chip reset. With RESET# Low all ODTs are disabled.
Figure clarifies the use of the MF=0 and MF=1 ball‐outs in x16 mode and why the bytes are renumbered to give the controller the view of the same bytes that a controller sees with a single x32 device. This is impor‐
tant for Address Training, DM and EDC functionality. For more details see the x16 enable and MF enable section.
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1
0
3
Top view thru package
(PCB below)
1
3
2
=
+
2
0
Top view thru PCB
(PCB above)
x16 MF=0 Controller view
x16 MF=0 x16 MF=1 x16 MF=1 Legend:
DQ
ADDRESS/COMMAND (except CS#)
CS#
Figure 83. Byte Orientation in Clamshell Topology
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7.2. ON DIE TERMINATION (ODT)
GDDR5 SGRAMs support multiple termination modes for its high speed input signals. When the termina‐
tion is enabled for a receiver, an impedance defined for that termination mode is applied between that input receiver and the VDDQ supply rail. This is commonly referred to as VDDQ termination. Registers have been defined to control the termination modes. ADD/CMD Termination is controlled using MR1 bits A4 and A5. Data termination is controlled using MR1 bits A2 and A3. WCK termination is controlled using MR3 bits A8 and A9.
Table 55 includes all the high speed GDDR5 SGRAM signals whose receivers include on die termination to VDDQ and whether their termination can be disabled by ADD/CMD Term, DQ Term, or WCK Term. A “Yes” indicates whether the mode register field controls termination for the signal. Table 55. Signals Affected by Termination Control Registers
ADD/CMD Term
MR1 (A4,A5)
DQ Term
MR1 (A2,A3)
WCK Term MR3 (A8,A9)
Signal
x32 x16
x32 x16 x32 x16 RAS#, CAS#, WE, CS#, CKE#
Yes
Yes
No
No
No
No
A10/A0, A9/A1, BA0/A2, BA3/A3,
BA2/A4, BA1/A5, A11/A6, A8/A7, A12/RFU/(NC), ABI#
Yes
Yes
No
No
No
No
DQ[7:0], DBI0#
No
No
Yes
Yes
No
No
DQ[15:8], DBI1#
No
Disabled
Yes
Disabled
No
Disabled
DQ[23:16], DBI2#
No
No
Yes
Yes
No
No
DQ[31:24], DBI3#
No
Disabled
Yes
Disabled
No
Disabled
WCK01, WCK01#, WCK23, WCK23#
No
No
No
No
Yes
Yes
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7.3. PACKAGE OUTLINE
TOP VIEW
BOTTOM VIEW
(170 ball)
SIDE VIEW
pkgheight
U
T
R
p
N
M
pkgY
J
H
14
16 x 0.8 = 12.8
L
K
G
F
E
D
0.8
C
B
A
pkgstandoff
5x0.8=4.0
0.8
13x0.8=10.4
12
pkgx
Figure 84. Package Dimensions
Table 56. Package Height Parameters
Nominal
Variation
pkgstandoff
0.350
+/‐ 0.050
pkgheight
1.100
+/‐ 0.100
Notes: 1) GDDR5 package height specification is compliant to MO‐207 Rev L, variation DAA‐z
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7.4. MIRROR FUNCTION (MF) ENABLE and x16 MODE ENABLE
The GDDR5 SGRAM provides a mirror function (MF) pin to change the physical location of the command, address, data, and WCK pins assisting in routing devices back to back. The MF ball should be tied directly to VSSQ or VDDQ depending on the control line orientation desired.
The GDDR5 SGRAM can operate in a x32 mode or a x16 mode to allow a clamshell configuration with a point to point connection on the high speed data signal. The disabled pins in x16 mode should all be in a Hi‐Z state, non‐terminating.
The x16 mode is detected at power up on the pin at location C‐13 which is EDC1 when configured to MF=0 and EDC2 when configured to MF=1. For x16 mode this pin is tied to VSSQ; the pin is part of the two bytes that are disabled in this mode and therefore not needed for EDC functionality. For x32 mode this pin is active and always terminated to VDDQ in the system or by the controller. The configuration is set with RESET# going High. Once the configuration has been set, it cannot be changed during normal operation. Usually the configuration is fixed in the system. Details of the x16 mode detection are depicted in Figure . A comparison of x32 mode and x16 mode systems is shown in Figure . This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
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GDDR5
in x16 mode
MF=0
VDDQ
EDC data from
other DRAM
enable
Termination
EDC1
RX
EDC1
EDC
x16
Controller
RX
VSSQ
RESET#
TX
EN
Termination
EDC2
EDC2
EDC
TX
EN
x16
Controller
RX
VSSQ
RESET#
D
0 = x16
GDDR5
in x32 mode
MF=0 or 1
VDDQ
EDC1
EDC Data
RESET#
RESET#
enable
Termination
RX
0 = x16
GDDR5
in x16 mode
MF=1
EDC data from
other DRAM
RX
D
RESET#
RESET#
VDDQ
enable
EDC Data
EDC1
EDC
TX
EN
EDC Data
x32
1 = x32
RX
VSSQ
D
Controller
RESET#
RESET#
RESET#
Figure 85. Enabling x16 mode
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Table 57. x16 mode and MF
MODE
MF
EDC1 (MF=0) or EDC2 (MF=1)
x16 non‐mirrored
VSSQ
VSSQ
x32 non‐mirrored
VSSQ
VDDQ (terminated by the system or controller)
x16 mirrored
VDDQ
VSSQ
x32 mirrored
VDDQ
VDDQ (terminated by the system or controller)
GDDR5
x32
DQ0‐DQ7,DBI0#
GDDR5
x16
DQ0‐DQ7,DBI0#
Byte0
EDC0
WCK01,WCK01#
DQ8‐DQ15,DBI1#
Byte1
DQ8‐DQ15,DBI1#
Byte2
Byte3
Controller
Controller
Command Bus
EDC2
Byte1
EDC1
Byte2
DQ16‐DQ23,DBI2#
EDC2
WCK23,WCK23#
DQ24‐DQ31,DBI3#
EDC3
Address Bus
EDC1
WCK01,WCK01#
EDC2
WCK23,WCK23#
DQ24‐DQ31,DBI3#
Byte0
EDC0
EDC1
DQ16‐DQ23,DBI2#
GDDR5
x16
Byte3
EDC3
Address Bus
ADD/
CMD
CK,CK#
RESET#
ADD/
CMD
Command Bus
CK,CK#
RESET
MF
MF
VSSQ
VSSQ
MF
VDDQ
Figure 86. System view for x32 mode vs. x16 mode
Figure 86 and Figure 87 show examples of the board channels and topologies that are supported in GDDR5 in order to illustrate the expected usage of x16 mode and the MF pin.
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64bit channel 32bit channel 16 DQ
(P2P)
32 DQ
(P2P)
32 DQ
(P2P)
ADD/CMD
(P22P)
ADD/CMD
(P2P)
ADD/CMD
(P22P)
16 DQ
(P2P)
32 DQ
(P2P)
Figure 87. Example Channel Topologies
For flexibility of PCB routing GDDR5 SGRAM devices, the ball‐out includes definition of both MF=0 and MF=1. The following simple block diagrams in Figure 88 demonstrate some of the flexibility of PCB rout‐
ing.
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Single side configurations
1
x32 MF=0
1
x32 MF=0
1
x32 MF=1
x32 MF=0
x32 MF=1
x32 MF=0
x32 MF=0
x32 MF=0
x32 MF=1
x32 MF=1
x32 MF=1
x16 MF=0
x16 MF=1
x32 MF=1
Clamshell configurations
x32 MF=0
1
x16 MF=0
x32 MF=1
x32 MF=1
1
x16 MF=1
x16 MF=1
x32 MF=1
x32 MF=0
1
x16 MF=0
Legend:
x32 MF=0
Note 1: 32bit channel is shown as an example.
Also applies with x16 on a 16bit channel.
DQ
ADDRESS/COMMAND (except CS#)
CS#
Figure 88. Example GDDR5 PCB Layout Topologies
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BOUNDARY SCAN
The GDDR5 SGRAM incorporates a modified boundary scan test mode. This mode does not operate in accordance with IEEE Standard 1149.1‐1990. To save the current GDDR5 SGRAM’s ball‐out, this mode will scan the parallel data input and output the scanned data on EDC0 located at C‐2 controlled by an add‐on pin, SEN which is located at J‐10 of the 170 ball package. Scan mode is entered directly after power‐up while the device is in reset state. This ensures that no unwanted access commands are being executed prior to scan mode.
Boundary scan does not distinguish between x16 and x32 modes, and data is captured on all pins. The user has to make sure to mask those bits in the test program which are not wired in the system.
For normal device operation, i.e. after scan mode operation, it is required that device re‐initialization occurs through device power‐down and then power‐up.
It is possible to operate the GDDR5 SGRAM without using the boundary scan feature. SEN should be tied Low to prevent the device from entering the boundary scan mode. The other pins which are used for scan mode (RESET#, MF, EDC0 and CS#) will be operating as normal when SEN is deasserted.
Table 58. Boundary Scan Exit Order
BIT#
BALL
BIT#
BALL
BIT#
BALL
BIT#
BALL
BIT#
BALL
1
D‐5
13
J‐3
25
T‐2
37
M‐11
49
E‐13
2
D‐4
14
K‐4
26
T‐4
38
M‐13
50
E‐11
3
D‐2
15
K‐5
27
U‐2
39
L‐12
51
D‐13
4
E‐4
16
L‐3
28
U‐4
40
K‐10
52
C‐13
5
E‐2
17
M‐2
29
U‐11
41
K‐11
53
B‐13
6
F‐4
18
M‐4
30
U‐13
42
J‐13
54
B‐11
7
F‐2
19
N‐2
31
T‐11
43
J‐12
55
A‐13
8
G‐3
20
N‐4
32
T‐13
44
J‐11
56
A‐11
9
H‐5
21
P‐2
33
R‐13
45
H‐11
57
A‐4
10
H‐4
22
P‐4
34
P‐13
46
H‐10
58
A‐2
11
J‐5
23
P‐5
35
N‐11
47
F‐13
59
B‐4
12
J‐4
24
R‐2
36
N‐13
48
F‐11
60
B‐2
Note: When the device is in scan mode, mirror function is disabled (MF=0) and none of the pins are remapped.
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Table 59. Scan Pin Description
PACKAGE SYMBOL
BALL
NORMAL FUNCTION
TYPE
DESCRIPTION
J‐2
SSH
RESET#
Input
Scan Shift: capture the data input from the pad at logic LOW and shift the data on the chain at logic HIGH.
G‐12
SCK
CS#
Input
Scan Clock. Not a true clock, could be a single pulse or series of pulses. All scan inputs will be referenced to the rising edge of the scan clock.
C‐2
SOUT
EDC0
Output
J‐10
SEN
RFU
Input
Scan Enable: logic HIGH enables scan mode. Scan mode is disabled at logic LOW. Must be tied to VSSQ when not in use.
Input
Scan Output Enable: enables (registered LOW) and disables (registered HIGH) SOUT data. This pin will be tied to VDDQ or GND through a resistor (typically 1K Ohm) for normal operation. Tester needs to overdrive this pin to guarantee the required input logic level in scan mode.
J‐1
SOE#
MF
Scan Output.
Notes:
1. When SEN is asserted, no commands are to be executed by the GDDR5 SGRAM. This applies to both user commands and manufacturing commands which may exist while RESET# is deasserted.
2. All scan functionality is valid only after the appropriate power‐up (Steps 1‐4 of initialization sequence). 3. In scan mode, all ODT will be disabled. Table 60. Scan AC Electrical Characteristics
PARAMETER/CONDITION
SYMBOL
MIN
MAX
UNIT
S
NOTES
Clock
tSCK
40
‐
ns
1
Scan enable setup time
tSES
20
‐
ns
1
Scan enable hold time
tSEH
20
‐
ns
1
Scan command setup time for SSH, SOE# and SOUT
tSCS
14
‐
ns
1
Scan command hold time for SSH, SOE# and SOUT
tSCH
14
‐
ns
1
Scan capture setup time
tSDS
10
‐
ns
1
Scan capture hold time
tSDH
10
‐
ns
1
Clock cycle time
Scan Command Time
Scan Capture Time
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Table 60. Scan AC Electrical Characteristics
PARAMETER/CONDITION
SYMBOL
MIN
MAX
UNIT
S
NOTES
Scan Shift Time
Scan clock to valid scan output
tSAC
‐
6
ns
1
Scan clock to scan output hold
tSOH
1.5
‐
ns
1
Notes:
1. The parameter applies only when SEN is asserted.
Not a true clock, but a single pulse or a series of pulses
SCK
tSES
SEN
SSH
(Low)
tSCS
SOE#
tSDS
Pins under Test
tSDH
VALID
Figure. 89 Scan Capture Timing
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SCK
tSES
SEN
tSCS
SSH
tSCS
SOE#
tSOH
SOUT
tSAC
Scan Out
bit 1
Scan Out
bit 2
Scan Out
bit 3
Scan Out
bit 4
Figure. 90 Scan Shift Timing
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H5GQ1H24AFR
VDD
VDDQ
VREF
RESET#
(SSH in Scan Mode)
tSCS
SEN
tSES
tSCK
SCK
tSCS
SOE#
tSCS
SOUT
tSDS
Pins under Test
tSDH
tSAC
Scan Out
bit 1
VALID
200us
Power‐up RESET at power‐up
VDD stable
Boundary Scan Mode
Don’t Care
Figure 91. Scan Initialization Sequence
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
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H5GQ1H24AFR
DQ3
D
SET
CLR
DQ2
D
SET
CLR
Q
Q
Q
Signals in scan chain:
DQ[31:0], EDC[3:1], DBI#[3:0], WCK01, WCK01#, WCK23, WCK23#,
RAS#, CAS#, WE#, CKE#, ABI#, A[7:0]***, CK, CK#, ZQ
Q
Note: A[7:0]*** are multiplexed pins and represent A[12:8] and BA[3:0]
Q
Pins under test
DQ1
D
SET
CLR
WCK01#
SSH, Scan Shift Pin RESET# D
SET
CLR
Dedicated Scan D FF per signal under test
Q
Signals not in the scan chain:
VDDQ, VSSQ, VDD, VSS, VREFx
Q
SOUT, Scan Out Pin EDC0
Q
SCK, Scan Clock Pin CS# SEN, Scan Enable Pin SEN SOE#, Scan Output Enable Pin MF Figure. 92 Internal Block Diagram
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
173