PHILIPS BUJ205AX

Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ205AX
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the plastic full-pack envelope
intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators,
motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCBO
VCEO
IC
ICM
Ptot
VCEsat
tf
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Fall time
VBE = 0 V
PINNING - SOT186A
PIN
TYP.
MAX.
UNIT
-
850
850
450
8
12
32
1.5
300
V
V
V
A
A
W
V
µs
Tmb ≤ 25 ˚C
IC = 5.0 A;IB = 1.0 A
Ic=6A,IB1=1.2A
PIN CONFIGURATION
SYMBOL
DESCRIPTION
c
case
1
base
2
collector
3
emitter
b
case isolated
e
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
VCBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Tmb ≤ 25 ˚C
MIN.
MAX.
UNIT
-65
-
850
450
850
8
12
4
6
32
150
150
V
V
V
A
A
A
A
W
˚C
˚C
TYP.
MAX.
UNIT
-
3.95
K/W
60
-
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
Junction to heatsink
with heatsink compound
Rth j-a
Junction to ambient
in free air
November 1998
1
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ205AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all
three terminals to external
heatsink
f = 50-60 Hz; sinusoidal
waveform;
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
TYP.
-
MAX.
UNIT
2500
V
-
10
-
pF
MIN.
TYP.
MAX.
UNIT
-
-
1
3
mA
mA
450
-
10
-
mA
V
10
10
-
1.5
1.5
35
35
V
V
TYP.
MAX.
UNIT
-
1.0
4
0.8
µs
µs
µs
-
1.5
300
µs
ns
-
2.5
300
µs
ns
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
1
ICES
ICES
Collector cut-off current
IEBO
VCEOsust
Emitter cut-off current
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 9 V; IC = 0 A
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 5 A; IB = 1.0 A
IC = 6 A; IB = 1.2 A
IC = 10 mA; VCE = 5 V
IC = 1.0A; VCE = 5 V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
ton
ts
tf
PARAMETER
CONDITIONS
Switching times (resistive load)
ICon = 6.0 A; IBon = -IBoff = 1.2 A;
RL = 75 ohms; VBB2 = 4 V;
Turn-on time
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
ts
tf
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
ts
tf
Turn-off storage time
Turn-off fall time
ICon = 6.0 A; IBon = 1.2 A; LB = 1 µH;
-VBB = 5 V
ICon = 6.0 A; IBon = 1.2 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ˚C
1 Measured with half sine-wave voltage (curve tracer).
November 1998
2
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ205AX
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
2.5
0.8 max. depth
6.4
15.8
19
max. max.
15.8
max
seating
plane
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
2
3
M
1.0 (2x)
0.6
2.54
0.9
0.7
0.5
2.5
5.08
1.3
Fig.1. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
November 1998
3
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ205AX
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1998
4
Rev 1.000