PHILIPS PMD5001K

PMD5001K
MOSFET driver
Rev. 01 — 3 November 2006
Product data sheet
1. Product profile
1.1 General description
PNP transistor and high-speed switching diode to protect the base-emitter junction in
reverse direction in a SOT346 (SC-59A/TO-236) small Surface-Mounted Device (SMD)
plastic package.
1.2 Features
n
n
n
n
n
n
General-purpose transistor and high-speed switching diode as driver
High-speed switching diode to protect the base-emitter junction
Application-optimized pinout
Internal connections to minimize layout effort
Space-saving solution
Reduces component count
1.3 Applications
n Power MOSFET driver
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
open base
-
-
−40
V
-
-
−0.1
A
-
-
−0.2
A
-
-
0.2
A
-
-
1.1
V
PNP transistor
VCEO
collector-emitter voltage
IC
collector current
ICM
peak collector current
single pulse;
tp ≤ 1 ms
Diode
IF
VF
[1]
forward current
forward voltage
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
IF = 200 mA
[1]
PMD5001K
NXP Semiconductors
MOSFET driver
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
1
base TR1, anode D1
2
emitter TR1, cathode D1
3
collector TR1
Symbol
3
3
TR1
1
2
D1
1
2
006aaa656
3. Ordering information
Table 3.
Ordering information
Type number
PMD5001K
Package
Name
Description
Version
SC-59A
plastic surface-mounted package; 3 leads
SOT346
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMD5001K
D4
PMD5001K_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 3 November 2006
2 of 15
PMD5001K
NXP Semiconductors
MOSFET driver
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
PNP transistor
VCBO
collector-base voltage
open emitter
-
−40
V
VCEO
collector-emitter voltage
open base
-
−40
V
IC
collector current
-
−0.1
A
ICM
peak collector current
-
−0.2
A
IB
base current
-
−0.1
A
IBM
peak base current
single pulse;
tp ≤ 1 ms
-
−0.2
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
230
mW
[2]
-
300
mW
[3]
-
375
mW
single pulse;
tp ≤ 1 ms
Diode
IF
forward current
IFRM
repetitive peak forward
current
tp ≤ 1 ms; δ = 0.25
-
0.2
A
-
0.6
A
IFSM
non-repetitive peak forward
current
square wave
tp ≤ 1 µs
-
9
A
tp ≤ 100 µs
-
3
A
tp ≤ 10 ms
-
1.7
A
Device
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
PMD5001K_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 3 November 2006
3 of 15
PMD5001K
NXP Semiconductors
MOSFET driver
006aaa859
500
Ptot
(mW)
400
(1)
(2)
300
(3)
200
100
0
−75
−25
25
75
125
175
Tamb (°C)
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
[1]
-
-
540
K/W
[2]
-
-
415
K/W
[3]
-
-
330
K/W
PNP transistor
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
PMD5001K_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 3 November 2006
4 of 15
PMD5001K
NXP Semiconductors
MOSFET driver
103
006aaa860
duty cycle =
1
Zth(j-a)
(K/W)
0.5
102
0.2
0.75
0.33
0.1
0.05
0.02
10 0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa861
103
duty cycle =
Zth(j-a)
(K/W)
1
0.75
0.5
0.33
102
0.2
0.1
0.05
10
0.02
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMD5001K_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 3 November 2006
5 of 15
PMD5001K
NXP Semiconductors
MOSFET driver
006aaa862
103
duty cycle =
Zth(j-a)
(K/W)
1
0.75
0.5
102
0.33
0.2
0.1
0.05
0.02
10
0.01 0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMD5001K_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 3 November 2006
6 of 15
PMD5001K
NXP Semiconductors
MOSFET driver
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
VCB = −40 V; IE = 0 A
-
-
−15
nA
VCB = −40 V; IE = 0 A;
Tj = 150 °C
-
-
−5
µA
VCE = −5 V; IC = −1 mA
200
290
450
VCE = −5 V; IC = −100 mA
95
150
-
PNP transistor
ICBO
collector-base cut-off
current
DC current gain
hFE
VCEsat
collector-emitter
saturation voltage
VCE = −5 V; IC = −200 mA
24
55
-
IC = −10 mA; IB = −0.5 mA
-
−90
−250
mV
IC = −100 mA; IB = −5 mA
-
−200
−400
mV
IC = −200 mA; IB = −20 mA
-
−350
−500
mV
IC = −10 mA; IB = −0.5 mA
-
−0.7
-
V
IC = −100 mA; IB = −5 mA
-
−0.85 -
V
IC = −200 mA; IB = −20 mA
-
−1
−1.2
V
base-emitter voltage
VCE = −5 V; IC = −2 mA
-
−650
-
mV
forward voltage
IF = 200 mA
-
-
1.1
V
td
delay time
IC = −0.05 A; IB = −2.5 mA
-
8
-
ns
VBEsat
VBE
base-emitter saturation
voltage
Diode
VF
[1]
Device
tr
rise time
-
56
-
ns
ton
turn-on time
-
64
-
ns
ts
storage time
-
588
-
ns
tf
fall time
-
216
-
ns
toff
turn-off time
-
804
-
ns
-
4
-
ns
-
6
-
ns
Device with optional capacitor C1
IC = −0.05 A; IB = −2.5 mA;
C1 = 1 nF
td
delay time
tr
rise time
ton
turn-on time
-
10
-
ns
ts
storage time
-
108
-
ns
tf
fall time
-
57
-
ns
toff
turn-off time
-
165
-
ns
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PMD5001K_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 3 November 2006
7 of 15
PMD5001K
NXP Semiconductors
MOSFET driver
006aaa890
500
hFE
006aaa891
−0.20
IB (mA) = −4
−3.6
−3.2
−2.8
IC
(A)
−0.16
400
(2)
−0.12
300
(3)
(4)
(5)
−0.08
200
(1)
−2.4
−2.0
−1.6
−1.2
−0.8
−0.4
−0.04
100
0
−10−1
−1
−10
−102
−103
0
0
−1
−2
−3
IC (mA)
VCE = −5 V
−4
−5
VCE (V)
Tamb = 25 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(4) Tamb = 125 °C
(5) Tamb = 150 °C
Fig 5. DC current gain as a function of collector
current; typical values
006aaa892
−1.1
VBE
(V)
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
006aaa893
−1.2
VBEsat
(V)
−0.9
−1.0
(1)
(1)
−0.7
−0.8
(2)
(2)
(3)
−0.5
−0.6
(3)
−0.3
−10−2
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −5 V
−0.4
−10−1
−1
−102
−103
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
Fig 8. Base-emitter saturation voltage as a function of
collector current; typical values
PMD5001K_1
Product data sheet
−10
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 3 November 2006
8 of 15
PMD5001K
NXP Semiconductors
MOSFET driver
006aaa894
−1
006aaa895
−1
VCEsat
(V)
VCEsat
(V)
−10−1
−10−1
(1)
(2)
(1)
(2)
(3)
(3)
−10−2
−10−1
−1
−10
−102
−10−2
−10−1
−103
−1
−10
−102
IC (mA)
−103
IC (mA)
Tamb = 25 °C
IC/IB = 20
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
8. Test information
VCC
RC
oscilloscope
(probe)
VO
C1
450 Ω
(probe)
3 kΩ
oscilloscope
R2
VI
TR1
DUT
R1
D1
006aaa896
IC = −0.05 A; IB = −2.5 mA; R1 = 50 Ω; R2 = 3 kΩ; RC = 180 Ω; C1 = 1 nF
Fig 11. Test circuit for switching times
PMD5001K_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 3 November 2006
9 of 15
PMD5001K
NXP Semiconductors
MOSFET driver
9. Package outline
1.3
1.0
3.1
2.7
3
0.6
0.2
3.0 1.7
2.5 1.3
1
2
1.9
0.50
0.35
Dimensions in mm
0.26
0.10
04-11-11
Fig 12. Package outline SOT346 (SC-59A/TO-236)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PMD5001K
[1]
Package
SOT346
Description
4 mm pitch, 8 mm tape and reel
3000
10000
-115
-135
For further information and the availability of packing methods, see Section 15.
PMD5001K_1
Product data sheet
Packing quantity
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 3 November 2006
10 of 15
PMD5001K
NXP Semiconductors
MOSFET driver
11. Soldering
3.30
1.00
0.70 (3x)
0.60 (3x)
0.70
(3x)
3
0.95
3.15
3.40
1.55
0.95
1
2
1.20
2.60
2.90
solder lands
solder resist
solder paste
occupied area
sot346
Dimensions in mm
Fig 13. Reflow soldering footprint
4.70
2.80
solder lands
solder resist
occupied area
Dimensions in mm
3
5.20 4.60 1.20
1
2
sot346
1.20 (2x)
3.40
preferred transport direction during soldering
Fig 14. Wave soldering footprint
PMD5001K_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 3 November 2006
11 of 15
PMD5001K
NXP Semiconductors
MOSFET driver
12. Mounting
43.4
43.4
10
0.7
10
0.8
40
40
0.8
0.7
0.5
0.5
Dimensions in mm
006aaa674
PCB thickness:
Dimensions in mm
006aaa675
PCB thickness = 1.6 mm
FR4 PCB = 1.6 mm
ceramic PCB = 0.635 mm
Fig 15. FR4 PCB, standard footprint;
ceramic PCB, Al2O3, standard
footprint
PMD5001K_1
Product data sheet
Fig 16. FR4 PCB, mounting pad for
collector 1 cm2
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 3 November 2006
12 of 15
PMD5001K
NXP Semiconductors
MOSFET driver
13. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMD5001K_1
20061103
Product data sheet
-
-
PMD5001K_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 3 November 2006
13 of 15
PMD5001K
NXP Semiconductors
MOSFET driver
14. Legal information
14.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
14.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
15. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
PMD5001K_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 3 November 2006
14 of 15
PMD5001K
NXP Semiconductors
MOSFET driver
16. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
14
14.1
14.2
14.3
14.4
15
16
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information. . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2006.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 3 November 2006
Document identifier: PMD5001K_1