IRFY210 Dimensions in mm (inches). N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 200V ID = 1.8A RDS(ON) = 1.725Ω Ω 1.0 (0.039) 2.54 (0.1) BSC 2.70 (0.106) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO257AB (TO220M) PINOUTS 1 – Gate 2 – Drain Case – Source Parameter Min. Typ. Max. Units VDSS Drain – Source Breakdown Voltage 200 V ID Continuous Drain Current 1.8 A PD Power Dissipation 11 W RDS(ON) Static Drain – Source On–State Resistance 1.725 Ω CISS Input Capacitance Qg Total Gate Charge 6.2 nC ttd(on) Turn–On Delay Time 15 ns ttr Rise Time 20 ns ttd(off) Turn–Off Delay Time 30 ns tf Fall Time 20 ns 140 pF This is a shortform datasheet. For a full datasheet please contact [email protected]. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Generated 13-Sep-02