BDS13 BDS13SMD BDS14 BDS14SMD BDS15 BDS15SMD SEME LAB MECHANICAL DATA Dimensions in mm SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES 4.6 1 0.6 1 0 .6 3.6 Dia. 1 3 .5 16.5 0.8 1 23 1 3 .7 0 FEATURES • HERMETIC METAL OR CERAMIC PACKAGES • HIGH RELIABILITY 1.0 2 .5 4 BSC 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) Pin 1 – Base 3 .6 0 (0 .1 4 2 ) M a x . • FULLY ISOLATED (METAL VERSION) APPLICATIONS 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 2 • POWER LINEAR AND SWITCHING APPLICATIONS • GENERAL PURPOSE POWER 9 .6 9 .3 1 1 .5 1 1 .2 TO220M SMD1 • SCREENING TO CECC LEVELS 3 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 1 • MILITARY AND SPACE OPTIONS 2. 70 BSC 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) - TO220 Metal Package - Isolated - Ceramic Surface Mount Package Pin 2 – Collector Pin 3 – Emitter ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) BDS13 VCBO VCEO VEBO IE , IC IB Ptot Tstg Tj Semelab plc. Collector - Base voltage (IE = 0) Collector - Emitter voltage (IB = 0) Emitter - Base voltage (IC = 0) Emitter , Collector current Base current Total power dissipation at Tcase £ 75°C Storage Temperature Junction Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk BDS14 BDS15 –60V –80V –100V –60V –80V –100V –5V –15A –5A 90W –65 TO 200°C 200°C PRELIM. 7/00 BDS13 BDS13SMD BDS14 BDS14SMD BDS15 BDS15SMD SEME LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Collector cut-off current (IE = 0) ICBO Collector cut-off current (IB = 0) ICEO VCB = –60V VCB = –80V VCB = –100V VCE = –30V VCE = –40V VCE = –50V BDS13 BDS14 BDS15 BDS13 BDS14 BDS15 IEBO Emitter cut-off current (IC = 0) VCEO(sus)* Collector - Emitter BDS14 sustaining voltage (IB = 0) VBE(sat)* VBE* hFE* DC Current gain fT Transition frequency Max. –500 –500 –500 –1 –1 –1 IC = –100mA Unit mA mA mA –1 BDS15 Collector - Emitter saturation voltage Base - Emitter saturation voltage Base - Emitter voltage Typ. VEB = –5V BDS13 VCE(sat)* Min. –60 –80 –100 V IC = –5A IC = –10A IB = –0.5A IB = –2.5A –1 –3 V IC = –10A IB = –2.5A –2.5 V IC = –5A IC = –0.5A IC = –5A IC = –10A IC = –0.5A VCE = –4V VCE = –4V VCE = –4V VCE = –4V VCE = –4V –1.5 250 150 V 40 15 5 3 MHz *Pulsed : Pulse duration = 300 ms , duty cycle = 1.5% SWITCHING CHARACTERISTICS Parameter ton ts tr On Time Storage Time Fall Time (td + tr) Test Conditions Max. IC = 4A VCC = 30V IB1 = 0.4A IC = 4A VCC = 30V IB1 = –IB2 = 0.4A 0.7 1.0 0.8 Unit ms ms ms THERMAL DATA RTHj-case Thermal resistance junction - case Max. 1.4°C/W RTHcase-sink Thermal resistance case - heatsink ** Typ. 1.0°C/W RTHj-a Thermal resistance junction - ambient Max. 80°C/W ** Smooth flat surface using thermal grease. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk PRELIM. 7/00