DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Product specification Supersedes data of 2003 Feb 26 2003 Jun 06 Philips Semiconductors Product specification GSM800 EDGE power module BGF844 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of 26 V: PIN – Output power = 2.5 W – Gain = 30 dB – Efficiency = 16% DESCRIPTION 1 RF input 2 VS 3 RF output Flange – ACPR < −65 dBc at 400 kHz ground – rms EVM < 0.4% – peak EVM < 1.2% • Low distortion to a GSM EDGE signal • Excellent 2-tone performance • Low die temperature due to copper flange 1 • Integrated temperature compensated bias • 50 Ω input/output impedance 23 Top view MBL257 • Flat gain over frequency band. Fig.1 Simplified outline. APPLICATIONS • Base station RF power amplifiers in the 869 to 894 MHz frequency range • GSM, GSM EDGE, multi carrier applications • Macrocell (driver stage) and Microcell (final stage). DESCRIPTION 23 W LDMOS power amplifier module for base station amplifier applications in the 869 to 894 MHz band. QUICK REFERENCE DATA Typical RF performance at Tmb = 25 °C. MODE OF OPERATION CW GSM EDGE f (MHz) VS (V) PL (W) Gp (dB) η (%) ACPR (dBc) rms EVM (%) 869 to 894 26 23 29 50 − − 16 −65(1) 0.4 869 to 894 26 2.5 Note 1. ACPR 400 kHz at 30 kHz resolution bandwidth. 2003 Jun 06 2 30 Philips Semiconductors Product specification GSM800 EDGE power module BGF844 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT VS DC supply voltage − 30 V PD input drive power − 100 mW PL load power − 27 W Tstg storage temperature −30 +100 °C Tmb operating mounting base temperature −20 +90 °C CHARACTERISTICS Tmb = 25 °C; VS = 26 V; PL = 2.5 W; f = 869 to 894 MHz; ZS = ZL = 50 Ω; unless otherwise specified. SYMBOL PARAMETER IDQ quiescent current (pin 2) CONDITIONS PD = 0 mW MIN. TYP. MAX. UNIT 245 280 320 mA Gp power gain 28 30 32 dB ∆Gp freq gain flatness over frequency range − 0.2 1 dB ∆Gp pwr gain flatness over power band PL = 25 mW up to 2.5 W −0.8 −0.2 +0.2 dB GOB out of band gain − − GPi max + 1 dB note 1 VSWRin input VSWR − 1.6 : 1 2:1 IMDr reverse intermodulation − −67 −64 dBc H2 second harmonic − −38 −34 dBc H3 third harmonic − −61 −58 dBc small signal, PD = 0 dBm; f < 869 MHz, f > 894 MHz fi = fc ±200 kHz; Pcarrier = 2.5 W; Pinterference = −40 dBc; stability VSWR ≤ 3 : 1 through all phases; VS2 = 25 to 28 V ruggedness VSWR = 10 : 1 through all phases; PL = 5 W all spurious outputs more than 60 dB below desired signal no degradation in output power EDGE (PL = 2.5 W average) η efficiency SR200 spectral regrowth; EDGE GSM signal SR400 SR600 13 16 − % 200 kHz − −36 −35 dBc 400 kHz − −65 −63 dBc 600 kHz − −75 −73 dBc EVMrms rms EDGE signal distortion − 0.4 1.2 % EVMM peak EDGE signal distortion − 1.2 4 % Intermodulation distortion (PL = 2.5 W average) d3 third order intermodulation − −45 − dBc d5 fifth order intermodulation − −52 − dBc d7 seventh order intermodulation − −60 − dBc carrier spacing = 200 kHz Note 1. GPi is small signal in-band gain. 2003 Jun 06 3 Philips Semiconductors Product specification GSM800 EDGE power module BGF844 MBL772 η Gp (dB) MBL773 −58 ACPR (dBc) 48 30 handbook, halfpage handbook, halfpage η (%) −60 36 29.6 Gp −62 24 29.2 −64 28.8 12 −66 −68 0 28.4 0 4 8 12 16 20 PL (AV)(W) 0 2 4 6 8 10 12 PL (AV) (W) Fig.3 f = 882 MHz. Fig.2 f = 882 MHz. GSM EDGE power gain and efficiency as functions of load power; typical values. Fig.3 MBL774 4 GSM EDGE ACPR at 400 kHz as a function of load power; typical values. MBL775 12 EVM (%) handbook, halfpage handbook, halfpage EVM (%) 10 3 8 2 6 4 1 2 0 0 0 2 4 6 8 10 12 0 2 PL (AV) (W) f = 882 MHz. f = 882 MHz. Fig.4 Fig.5 GSM EDGE rms EVM as a function of average load power; typical values. 2003 Jun 06 4 4 6 8 10 12 PL (AV) (W) GSM EDGE peak EVM as function of average load power; typical values. Philips Semiconductors Product specification GSM800 EDGE power module BGF844 MBL776 30.4 Gp (dB) 30 handbook, halfpage η (%) η MBL777 30 60 handbook, halfpage 48 η Gp (dB) η (%) 48 29.6 29.6 36 Gp 36 29.2 29.2 24 28.8 12 24 Gp 28.8 12 0 28.4 0 8 16 24 28.4 32 0 0 4 8 12 PL (W) PL (W) f = 882 MHz. f1 = 882 MHz; f2 = 883 MHz. Fig.6 Fig.7 CW gain power and efficiency as functions of load power; typical values. MBL778 −20 MBL779 handbook, halfpage s21 (dB) dim (dBc) −30 −50 d7 −60 4 8 s11 0 s11 (dB) −6 s11 d5 −40 s21 28 d3 0 Two tone gain power and efficiency as functions of load power; typical values. 30 handbook, halfpage −70 16 26 −12 24 −18 22 −24 20 750 12 16 PL (AV) (W) 850 950 f (kHz) −30 1050 f1 = 882 MHz; f2 = 883 MHz. Fig.8 Two tone intermodulation distortion as a function of average load power; typical values. 2003 Jun 06 Fig.9 s-parameters as a function of frequency. 5 Philips Semiconductors Product specification GSM800 EDGE power module BGF844 MOUNTING RECOMMENDATIONS CAUTION General During the following procedures ESD precautions should be taken to protect the device from electrostatic damage. LDMOST base station modules are manufactured with the dies directly mounted onto a copper flange. The matching and bias circuit components are mounted on a printed-circuit board (PCB), which is also soldered onto the copper flange. The dies and the PCB are encapsulated in a plastic cap, and pins extending from the module provide a means of electrical connection. This construction allows the module to withstand a limited amount of flexing, although bending of the module is to be avoided as much as possible. Mechanical stress can occur if the bottom surface of the module and the surface of the amplifier casing (external heatsink) are not mutually flat. This, therefore, should be a consideration when mounting the module in the amplifier. Another cause of mechanical stress can arise from thermal mismatch after soldering of the pins. Precautions should be taken during soldering, and efforts made to ensure a good thermal contact between the flange and the external heatsink. PROCEDURE 1. Apply a thin, evenly spread layer of thermal compound to the module flange bottom surface. Excessive use of thermal compound may result in increased thermal resistance and possible bending of the of the flange. Too little thermal compound will result in an increase in thermal resistance. 2. Take care that there is some space between the cap and the PCB. Bring the module into contact with the external heatsink casing, ensuring that there is sufficient space for excessive thermal compound to escape. 3. Carefully align the module with the heatsink casing mounting holes, and secure with two 3 mm bolts and two flat washers. Initially tighten the bolts to “finger tight” (approximately 0.05 Nm). Using a torque wrench, tighten each bolt in alternating steps to a final torque of 0.4 Nm. External heatsink (amplifier casing) The module should always be mounted on a heatsink with a low thermal resistance to keep the module temperature as low as possible. The mounting area of the heatsink should be flat and free from burrs and loose particles. We recommend a flatness for the mounting area of between 50 µm concave and 50 µm convex. The 50 µm concave value is to ensure optimal thermal behaviour, while the 50 µm convex value is intended to limit mechanical stress due to bending. 4. After the module is secured to the casing, the module leads may be soldered to the PCB. The leads are for electrical connection only, and should not be used to support the module at any time in the assembly process. In order to ensure optimal thermal behaviour, the use of thermal compound is recommended when mounting the module onto the amplifier external heatsink. Electrical connections A soldering iron may be used up to a temperature of 250 °C for a maximum of 10 seconds. Avoid contact between the soldering iron and the plastic cap. The main ground path of all modules is via the flange. It is therefore important that the flange is well grounded and that return paths are kept as short as possible. An incorrectly grounded flange can result in a loss of output power or in oscillation. The following recommended thermal compounds have a thermal conductivity of >0.5 W/mK: • WPS II (silicone-free) from Austerlitz-Electronics • Comp. Trans. from KF The RF input and output of the module are designed for 50 Ω connections. • 340 from Dow Corning • Trans-Heat from E. Friis-Mikkelsen. Incoming inspection The use of thermal pads instead of thermal compound is not recommended as the pads may not maintain a uniform flatness over a period of time. When incoming inspection is performed, use a properly designed test fixture to avoid excessive mechanical stress and to ensure optimal RF performance. Philips can deliver dedicated test fixtures on request. Mounting PREPARATION Ensure that the surface finishes are free from burrs, dirt and grease. 2003 Jun 06 6 Philips Semiconductors Product specification GSM800 EDGE power module BGF844 APPLICATION INFORMATION handbook, halfpage TEMPERATURE COMPENSATED GATE BIAS C1 C2 C3 C4 + Z1 R1 L1 Z2 C5 50 Ω input VS MBL781 50 Ω output Fig.10 Test circuit. List of components (see Figs 10 and 11) COMPONENT DESCRIPTION VALUE C1, C3 multilayer X7R ceramic chip capacitor 100 nF; 50 V C2, C5 tantalum SMD capacitor 10 µF; 35 V C4 electrolytic capacitor 100 µF; 35 V L1 grade 4S2 Ferroxcube bead R1 metal film resistor 10 Ω; 0.4 W Z1, Z2 stripline; note 1 50 Ω CATALOGUE NUMBER 4330 030 36300 2322 195 13109 Note 1. The striplines are on a double copper-clad printed-circuit board (RO5880) with εr = 2.2 and thickness = 0.79 mm. 2003 Jun 06 7 Philips Semiconductors Product specification GSM800 EDGE power module BGF844 90 handbook, full pagewidth 42 C5 L1 R1 output 50 Ω C4 Z2 Z1 C3 C2 C1 DUT MBL780 Dimensions in mm. Fig.11 Printed-circuit board and component layout. 2003 Jun 06 8 input 50 Ω Philips Semiconductors Product specification GSM800 EDGE power module BGF844 PACKAGE OUTLINE Plastic rectangular single-ended flat package; flange mounted; 2 mounting holes; 3 in-line leads SOT365C D A F y U q A U3 U2 p E L 1 2 3 b e1 U1 w M e 0 c v A Z Q 10 20 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b c D E mm 9.5 9.0 0.56 0.46 0.3 0.2 30.1 29.9 18.6 18.4 OUTLINE VERSION e F L p Q 3.3 3.1 3.7 3.3 3.55 3.45 4.0 3.8 e1 2.54 20.32 REFERENCES IEC JEDEC JEITA U 41.75 48.4 41.65 48.0 U1 U2 U3 v w y Z 15.4 15.2 7.75 7.55 1.1 0.0 0.3 0.25 0.1 12.8 12.6 EUROPEAN PROJECTION ISSUE DATE 01-06-06 02-11-13 SOT365C 2003 Jun 06 q 9 Philips Semiconductors Product specification GSM800 EDGE power module BGF844 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Jun 06 10 Philips Semiconductors Product specification GSM800 EDGE power module BGF844 NOTES 2003 Jun 06 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/07/pp12 Date of release: 2003 Jun 06 Document order number: 9397 750 11507