GI750 thru GI758 Vishay General Semiconductor High Current Axial Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward current capability • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC P600 TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes application. PRIMARY CHARACTERISTICS IF(AV) 6.0 A VRRM 50 V to 800 V IFSM 400 A VF 0.9 V, 0.95 V IR 5.0 μA TJ max. 150 °C Note • These devices are not AEC-Q101 qualified. MECHANICAL DATA Case: P600, void-free molded epoxy body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GI750 GI751 Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 V Maximum RMS voltage VRMS 35 70 140 280 420 560 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 V Maximum non-repetitive peak reverse voltage VRSM 60 120 240 480 720 1200 V Maximum average forward rectified current at GI752 TA = 60 °C, P.C.B. mounting (fig. 1) TL = 60 °C,0.125" (3.18 mm) lead length (fig. 2) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range GI754 GI756 GI758 UNIT 6.0 IF(AV) A 22 IFSM 400 A TJ, TSTG - 50 to + 150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage at 6.0 A VF 100 A Maximum DC reverse current at rated DC blocking voltage SYMBOL TA = 25 °C TA = 100 °C IR GI750 GI751 GI752 GI754 GI756 GI758 0.90 0.95 1.25 1.30 UNIT V 5.0 μA 1.0 mA Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 2.5 μs Typical junction capacitance 4.0 V, 1 MHz CJ 150 pF Document Number: 88627 Revision: 28-Oct-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 GI750 thru GI758 Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance GI750 GI751 GI752 GI754 RθJA (1) 20 (1) 4.0 RθJL GI756 GI758 UNIT °C/W Note (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted with 1.1" x 1.1" (30 mm x 30 mm) copper pads ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE GI756-E3/54 2.1 54 800 13" diameter paper tape and reel GI756-E3/73 2.1 73 300 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1000 60 Hz Resistive or Inductive Load 7.0 6.0 5.0 4.0 3.0 2.0 1.1" x 1.1" (30 mm x 30 mm) Copper Pads 1.0 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 8.0 Non-Repetitive TJ = 150 °C 100 TJ = 25 °C TJ = 150 °C Repetitive VRRM may be Applied Between Each Cycle of Surge, the TJ Noted is TJ Prior to Surge 10 0 0 20 40 60 80 100 10 1 100 120 140 160 180 200 Ambient Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Maximum Peak Forward Surge Current L 60 Hz Resistive or Inductive Load = 0. "( 0.2 5" (6. 8 20 1 3. L= 5 12 24 mm ) m L= 16 m 35 ) 0.3 75 " (9 .5 12 L= 8 Both Leads Attached to Heat Sinks with Length as Shown “L” mm ) 0.6 25" (15 .8 m m) 4 0 0 20 40 60 80 100 120 140 160 180 200 100 Instantaneous Forward Current (A) 28 Average Forward Current (A) TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle 10 TJ = 25 °C 1 0.1 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Lead Temperature (°C) Instantaneous Forward Voltage (V) Fig. 2 - Maximum Forward Current Derating Curve Fig. 4 - Typical Instantaneous Forward Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88627 Revision: 28-Oct-09 GI750 thru GI758 Vishay General Semiconductor 100 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (µA) 100 TJ = 125 °C TJ = 100 °C 1 TJ = 25 °C 0.1 20 40 60 80 10 1 0.1 0.01 0.01 0 Mounted on 0.20" x 0.27" (5.0 mm x 7.0 mm) Copper Pad Areas 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 5 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) P600 1.0 (25.4) MIN. 0.360 (9.1) 0.340 (8.6) 0.360 (9.1) 0.340 (8.6) 0.052 (1.32) 0.048 (1.22) DIA. Document Number: 88627 Revision: 28-Oct-09 1.0 (25.4) MIN. For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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