BOURNS CDDFN10

NT
IA
PL
M
CO
S
oH
*R
Features
Applications
■ Lead free as standard
■ FireWire, T1/E1, T3/E3 chip side protection
■ RoHS compliant*
■ Digital Visual Interface (DVI)
■ Low capacitance - 4 pF
■ Ethernet 10/100/1000 Base T
■ ESD protection >24 kV
■ High speed port protection
■ Surge protection
■ Portable electronics
CDDFN10-3304N - TVS/Steering Diode Array
General Information
The CDDFN10-3304N device provides ESD, EFT and Surge protection for high speed
data ports meeting IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5
(Surge) requirements. The Transient Voltage Suppressor array, protecting up to 4 data
lines, offers a Working Peak Reverse Voltage of 3.3 V.
Pin
5
Pin
1
The DFN-10 packaged device will mount directly onto the industry standard
DFN-10 footprint. Bourns® Chip Diodes are easy to handle with standard pick and
place equipment and their flat configuration minimizes roll away.
Pin
3
Pin
7
Pin
9
Pin
2
Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
CDDFN10-3304N
Unit
Peak Pulse Power (tp = 8/20 µs) (NOTE 1)
PPK
400
W
Storage Temperature
TSTG
-55 to +150
ºC
Operating Temperature
TOPR
-55 to +150
ºC
Symbol
CDDFN10-3304N
Unit
Minimum Snap-Back Voltage @ 50 mA
VSB
3.3
V
Maximum Working Peak Voltage
VWM
3.3
V
Maximum Leakage Current @ VWM
ID
1
µA
Maximum Clamping Voltage1 @ IP = 1 A
VC
5.5
V
Maximum Clamping Voltage1 @ IP = 10 A
VC
10
V
Minimum Punch-Through Voltage @ 5 A
VP
3.5
V
Maximum Junction Capacitance2 @ 0 V 1 MHz
CD
4.0
pF
ESD Protection per IEC 61000-4-2
Minimum Contact Discharge
Minimum Air Discharge
8
15
kV
kV
EFT Protection per IEC 61000-4-4 @ 5/50 ns
40
A
Surge Protection per IEC 61000-4-5 @ 8/20 µs
Level 2 (Line-Gnd) & Level 3 (Line-Line)
18
A
Notes:
1. See Peak Pulse Power vs. Pulse Time.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Note 1: Pin 5 to ground.
Note 2: Pin 1,3,7 or 9 to ground.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications
Asia-Pacific: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116
Europe: Tel: +41-41 768 5555 • Fax: +41-41 768 5510
The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700
www.bourns.com
CDDFN10-3304N - TVS/Steering Diode Array
Product Dimensions
Recommended Footprint
This is a molded DFN10 package with lead free Nickel-PaladiumGold (Ni/Pd/Au) on the lead frame. It has a flammability rating of
UL 94V-0.
0.30
(.012)
0.50
(.020)
3.15
(.124)
2.50 - 2.70
(0.098 - 0.106)
1.26
(.050)
1.85
(.073)
2.50
(.100)
2.50 - 2.70
(0.098 - 0.106)
PIN 1
INDICATOR
0.65
(.026)
2.05
(.081)
Typical Part Marking
CDDFN10-3304N ........................................................................334
0.45 - 0.55
(0.018 - 0.022)
How to Order
0.13
(0.005)
CD DFN10 - 33 04 N
0.50
(.020)
Common Diode
Chip Diode
Package
DFN10 = DFN-10 Package
0.25 - 45 °
1.21 - 1.31
(0.048 - 0.052)
Working Peak Reverse Voltage
33 = 3.3 VRWM (Volts)
Number of Lines
04 = 4 Data Lines
Suffix
N = Low Capacitance
Pin Out
2.10 - 2.20
(0.083 - 0.087)
DIMENSIONS:
MM
(INCHES)
0.35 - 0.45
(0.014 - 0.018)
Pin
Function
1
I/O
2
N.C.
3
I/O
4
N.C.
5
VCC
6
N.C.
7
I/O
8
N.C.
9
I/O
10
N.C.
GND
GROUND
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications
CDDFN10-3304N - TVS/Steering Diode Array
Rating & Characteristic Curves
Pulse Waveform
IPP – Peak Pulse Current (% of IPP)
Peak Pulse Power vs. Pulse Time
PPP – Peak Pulse (W)
10,000
500 W, 8/20 µs Waveform
1000
100
10
0.01
120
Test Waveform Parameters
tt = 8 µs
td = 20 µs
tt
100
80
et
60
40
td = t|IPP/2
20
0
1
10
100
1,000
5
0
10,000
10
15
20
25
t – Time (µs)
td – Pulse Duration (µs)
Overshoot & Clamping Voltage
Power Derating Curve
100
Peak Pulse Power
8/20 µs
80
% of Rated Power
5 Volts per Division
20
10
c1
1
0
60
40
20
-10
Average Power
-20
0
-250.00 ns
250.00 ns
real time
0.000 ns
50.0 ns/div.
0
Typical Reverse Voltage vs. Capacitance
C – Capacitance (pF)
5.0
4.0
3.0
2.0
0
1
2
3
4
VR – Reverse Voltage (V)
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications
50
75
100
125
TL - Lead Temperature (°C)
ESD Test Pulse: 25 kilovolt, 1/30 ns (waveshape)
0
25
5
150
30
CDDFN10-3304N - TVS/Steering Diode Array
Packaging Information
The product will be dispensed in tape and reel format (see diagram below).
P
0
P
1
d
T
E
Index Hole
120 °
F
D2
W
B
D1 D
P
A
Trailer
.......
.......
End
C
Device
.......
.......
.......
.......
Leader
.......
.......
W1
Start
DIMENSIONS:
10 pitches (min.)
10 pitches (min.)
Direction of Feed
Item
Symbol
DFN-10
Carrier Width
A
2.90 ± 0.10
(0.114 ± 0.004)
Carrier Length
B
2.90 ± 0.10
(0.114 ± 0.004)
Carrier Depth
C
0.90 ± 0.10
(0.035 ± 0.004)
Sprocket Hole
d
1.55 ± 0.05
(0.061 ± 0.002)
Reel Outside Diameter
D
178
(7.008)
Reel Inner Diameter
D1
50.0
MIN.
(1.969)
Feed Hole Diameter
D2
13.0 ± 0.20
(0.512 ± 0.008)
Sprocket Hole Position
E
1.75 ± 0.10
(0.069 ± 0.004)
Punch Hole Position
F
3.50 ± 0.05
(0.138 ± 0.002)
Punch Hole Pitch
P
4.00 ± 0.10
(0.157 ± 0.004)
Sprocket Hole Pitch
P0
4.00 ± 0.10
(0.157 ± 0.004)
Embossment Center
P1
2.00 ± 0.05
(0.079 ± 0.002)
Overall Tape Thickness
T
0.20 ± 0.10
(0.008 ± 0.004)
Tape Width
W
8.00 ± 0.20
(0.315 ± 0.008)
Reel Width
W1
Quantity per Reel
MM
(INCHES)
--
14.4
MAX.
(0.567)
3000
Devices are packed in accordance with EIA standard
RS-481-A.
09/08
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications