SM16GZ51,SM16JZ51 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16GZ51,SM16JZ51 AC POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak off−State Voltage : VDRM = 400, 600 V l R.M.S On−State Current : IT (RMS) = 16 A l High Commutating (dv / dt) : (dv / dt) c = 10 V / µs l Isolation Voltage : VISOL = 1500 V AC MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage SM16GZ51 SM16JZ51 SYMBOL VDRM R. M. S. On−tate Current (Full Sine Waveform Ta = 82°C) IT (RMS) Peak One Cylce Surge On−State Current (Non−Repetitive) ITSM 2 I t Limit Value 2 RATING 400 600 16 150 (50 Hz) 165 (60 Hz) UNIT V A A 2 I t 112.5 A s Critical Rate of Rise of On−State Current (Note 1) di / dt 50 A / µs Peak Gate Power Dissipation PGM 5 W PG (AV) 0.5 W Peak Gate Voltage VGM 10 V Peak Gate Current IGM 2 A Tj −40~125 °C Tstg −40~125 °C VISOL 1500 V Average Gate Power Dissipation Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1 min.) JEDEC JEITA TOSHIBA Weight: 2.0g ― ― 13−16A1A Note 1: di / dt test condition VDRM = 0.5 × Rated, ITM ≤ 25 A, tgw ≥ 10 µs, tgr ≤ 250 ns, igp = IGT × 2.0 1 2001-07-10 SM16GZ51,SM16JZ51 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL MIN TYP. MAX UNIT ― ― 20 µA T2 (+) , Gate (+) ― ― 1.5 T2 (+) , Gate (−) ― ― 1.5 T2 (−) , Gate (−) ― ― 1.5 IV T2 (−) , Gate (+) ― ― ― I T2 (+) , Gate (+) ― ― 30 T2 (+) , Gate (−) ― ― 30 T2 (−) , Gate (−) ― ― 30 T2 (−) , Gate (+) ― ― ― Repetitive Peak Off−State Current IDRM TEST CONDITION VDRM = Rated I II Gate Trigger Voltage III II Gate Trigger Current III VGT IGT VD = 12 V, RL = 20 Ω VD = 12 V, RL = 20 Ω IV V mA Peak On−State Voltage VTM ITM = 25 A ― ― 1.5 V Gate Non−Trigger Voltage VGD VD = Rated, Tc = 125°C 0.2 ― ― V IH VD = 12 V, ITM = 1 A ― ― 50 mA Rth (j−c) Junction to Case, AC ― ― 1.8 °C / W Holding Current Thermal Resistance Critical Rate of Rise of Off−State Voltage dv / dt VDRM = Rated, Tj = 125°C Exponential Rise ― 300 ― V / µs Critical Rate of Rise of Off−State Voltage at Commutation (dv / dt) c VDRM = 400 V, Tj = 125°C (di / dt) c = −8.7 A / ms 10 ― ― V / µs MARKING *NUMBER *1 SYMBOL TYPE MARK M16GZ51 SM16GZ51 M16JZ51 SM16JZ51 Example 8A : January 1998 8B : February 1998 8L : December 1998 *2 2 2001-07-10 SM16GZ51,SM16JZ51 3 2001-07-10 SM16GZ51,SM16JZ51 4 2001-07-10 SM16GZ51,SM16JZ51 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2001-07-10