2SC5087 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base current IB 40 mA Collector current IC 80 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C Tstg −55~125 °C Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― JEITA ― TOSHIBA 2-3J1C Weight: 0.012 g (typ.) Microwave Characteristics (Ta = 25°C) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition Min Typ. Max Unit GHz VCE = 10 V, IC = 20 mA 5 7 ⎯ 2 VCE = 10 V, IC = 20 mA, f = 500 MHz ⎯ 18 ⎯ 2 VCE = 10 V, IC = 20 mA, f = 1 GHz 9.5 13 ⎯ NF (1) VCE = 10 V, IC = 5 mA, f = 500 MHz ⎯ 1 ⎯ NF (2) VCE = 10 V, IC = 5 mA, f = 1 GHz ⎯ 1.1 2 Min Typ. Max Unit fT ⎪S21e⎪ (1) ⎪S21e⎪ (2) dB dB Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current ICBO VCB = 10 V, IE = 0 ⎯ ⎯ 1 μA Emitter cut-off current IEBO VEB = 1 V, IC = 0 ⎯ ⎯ 1 μA VCE = 10 V, IC = 20 mA 80 ⎯ 240 ⎯ 1.1 1.6 pF ⎯ 0.65 1.05 pF DC current gain hFE (Note 1) Output capacitance Cob Reverse transfer capacitance Cre VCB = 10 V, IE = 0, f = 1 MHz (Note 2) Note 1: hFE classification O: 80~160, Y: 120~240 Note 2: Cre is measured by 3 terminal method with capacitance bridge. 1 2007-11-01 2SC5087 Marking 2 1 Type Name hFE Rank CO 3 4 2 2007-11-01 2SC5087 VCE = 10 V Ta = 25°C DC CURRENT GAIN 300 200 100 70 50 30 1 2 3 5 7 10 20 30 COLLECTOR CURRENT IC 50 70 100 (mA) OUTPUT CAPACITANSE Cob (pF) REVERSE TRANSFER CAPACITANCE Cre hFE 500 (pF) hFE – IC 1000 Cob, Cre – VCB 10 f = 1 MHz Ta = 25°C 5 3 2 Cob Cre 1 0.7 0.5 0.3 0.1 0.2 0.3 7 VCB 10 (V) (dB) VCE = 10 V f = 1 GHz Ta = 25°C ⎪S21e⎪ 2 8 6 INSERTION GAIN (GHz) TRANSITION FREQUENCY fT Ta = 25°C 4 2 3 5 7 10 30 12 8 4 0 1 50 70 100 (mA) 3 5 7 10 30 COLLECTOR CURRENT IC 2 ⎪S21e⎪ – f 50 70 100 (mA) NF – IC 5 VCE = 10 V VCE = 10 V (dB) IC = 20 mA 30 Ta = 25°C NF 2 (dB) 5 2 35 20 NOISE FIGURE ⎪S21e⎪ 3 ⎪S21e⎪ – IC COLLECTOR CURRENT IC INSERTION GAIN 2 16 VCE = 10 V 10 0 0.1 1 COLLECTOR-BASE VOLTAGE fT – IC 10 0 1 0.5 0.7 0.3 0.5 0.7 0 FREQUENCY f 3 5 7 4 3 2 1 0 1 10 (GHz) f = 1 GHz Ta = 25°C 3 5 7 10 30 COLLECTOR CURRENT IC 3 50 70 100 (mA) 2007-11-01 2SC5087 2 ⎪S21e⎪ – VCE PC – Ta (mW) PC 14 12 COLLECTOR POWER DISSIPATION INSERTION GAIN ⎪S21e⎪ 2 (dB) 16 10 8 6 4 IC = 20 mA f = 1 GHz Ta = 25°C 2 0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE S-Parameter 10 VCE 12 (V) 200 160 120 80 40 0 0 25 50 75 100 AMBIENT TEMPERATURE 125 Ta 150 (°C) ZO = 50 Ω, Ta = 25°C VCE = 10 V, IC = 5 mA Frequency S11 S21 S12 S22 MHz Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. 200 0.793 −82.4 11.923 133.4 0.050 52.7 0.788 −36.4 400 0.736 −128.0 7.835 108.5 0.066 38.0 0.584 −53.4 600 0.719 −152.1 5.578 94.5 0.071 34.1 0.490 −63.5 800 0.701 −168.6 4.279 84.4 0.073 33.9 0.445 −72.2 1000 0.698 178.9 3.451 76.6 0.074 36.7 0.424 −80.5 1200 0.697 168.3 2.855 69.9 0.076 40.8 0.413 −88.9 1400 0.699 159.4 2.440 64.0 0.078 46.6 0.404 −97.3 1600 0.703 150.8 2.121 59.3 0.084 52.5 0.401 −105.4 1800 0.713 142.9 1.876 54.5 0.091 58.3 0.398 −112.6 2000 0.722 134.7 1.681 50.3 0.100 63.5 0.398 −119.6 VCE = 10 V, IC = 20 mA Frequency S11 S21 S12 S22 MHz Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. 200 0.655 −129.4 20.724 113.2 0.031 48.0 0.496 −59.6 400 0.650 −161.5 11.288 95.5 0.040 50.4 0.319 −74.1 600 0.660 −176.3 7.643 86.4 0.049 56.4 0.263 −83.5 800 0.666 172.8 5.758 79.6 0.059 60.0 0.242 −92.9 1000 0.667 164.0 4.605 74.2 0.070 63.6 0.233 −102.0 1200 0.668 156.8 3.809 69.3 0.080 65.9 0.229 −111.0 1400 0.677 148.4 3.277 65.1 0.091 68.2 0.226 −119.1 1600 0.676 141.1 2.862 61.2 0.104 70.0 0.223 −126.5 1800 0.688 133.9 2.559 57.5 0.117 71.2 0.220 −132.4 2000 0.690 126.7 2.303 54.1 0.131 72.4 0.217 −137.8 4 2007-11-01 2SC5087 S21e VCE = 10 V IC = 5 mA Ta = 25°C S11e VCE = 10 V IC = 5 mA Ta = 25°C (Unit: Ω) j50 90° 120° j25 16 j150 2.0 j10 60° j100 1.6 12 150° f = 0.2 GHz 0.4 j250 30° 8 0.8 1.2 1.6 2.0 2 1.2 10 0 25 50 250 100 ±180° 0.8 16 12 8 0° 0 4 −j250 −j10 −150° 0.4 f = 0.2 GHz −j25 −30° −j150 −j100 −60° −120° −90° −j50 S12e VCE = 10 V IC = 5 mA Ta = 25°C 120° S22e VCE = 10 V IC = 5 mA Ta = 25°C (Unit: Ω) 90° 0.20 60° j50 j25 0.16 j100 j150 0.12 150° 30° 2.0 0.08 1.6 f = 0.2 GHz 1.2 0.04 0.8 0.4 ±180°0.20 0.16 0.12 0.08 0.04 j10 0° 0 0 j250 10 25 2.0 −150° −j10 −30° 100 50 250 1.2 1.6 0.8 −j250 0.4 f = 0.2 GHz −j150 −j25 −60° −120° −90° −j100 −j50 5 2007-11-01 2SC5087 S21e VCE = 10 V IC = 20 mA Ta = 25°C S11e VCE = 10 V IC = 20 mA Ta = 25°C (Unit: Ω) j50 90° 120° j25 20 f = 0.2 GHz j150 2.0 1.6 j10 60° j100 15 150° 0.4 j250 1.2 0.8 10 0 25 250 100 50 ±180° 20 15 10 30° 10 0.8 1.2 5 1.6 2.0 0° 0 5 0.4 −j250 −j10 −150° f = 0.2 GHz −30° −j150 −j25 −j100 −60° −120° −90° −j50 S12e VCE = 10 V IC = 20 mA Ta = 25°C 120° S22e VCE = 10 V IC = 20 mA Ta = 25°C (Unit: Ω) 90° 0.20 60° j50 j25 0.16 j100 2.0 j150 0.12 150° 1.6 0.08 j10 1.2 0.04 0.4 ±180°0.20 0.16 0.12 0.08 0.04 30° j250 0.8 f = 0.2 GHz 0° 0 0 10 25 50 2.0 1.2 −150° 100 250 0.8 0.4 −j10 −30° 1.6 −j250 f = 0.2 GHz −j150 −j25 −60° −120° −90° −j100 −j50 6 2007-11-01 2SC5087 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-11-01