MT6L55E Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the super-thin and ultra-super-mini (6-pin) ES6 package. Mounted Devices Three-pin (SSM/TESM) product No. Q1: SSM (TESM) Q2: TESM MT3S07S (MT3S07T) MT3S05T Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Q1 Q2 Unit Collector-base voltage VCBO 10 10 V Collector-emitter voltage VCEO 5 5 V JEDEC ― Emitter-base voltage VEBO 1.5 2 V JEITA ― Collector current IC 25 40 mA Base current IB 10 10 mA Collector power dissipation Junction temperature Storage temperature range Note: PC (Note 1) 150 mW Tj 125 °C Tstg −55~125 °C TOSHIBA 2-2N1C Weight: 3 mg (typ.) Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total power dissipation of Q1 and Q2 mounted on the circuit board Marking Pin Connections 6 5 4 B1 A R 1 2 E2 Q1 3 C1 1 B2 Q2 E1 C2 2007-11-01 MT6L55E Electrical Characteristics Q1-Side (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 5 V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cut-off current IEBO VEB = 1 V, IC = 0 ⎯ ⎯ 1 μA DC current gain hFE VCE = 1 V, IC = 5 mA 70 ⎯ 140 ⎯ fT GHz Transition frequency Insertion gain Noise figure Reverse transfer capacitance VCE = 3 V, IC = 10 mA 10 12 ⎯ 2 VCE = 1 V, IC = 5 mA, f = 2 GHz ⎯ 6.5 ⎯ ⎪S21e⎪ (2) 2 VCE = 3 V, IC = 15 mA, f = 2 GHz 4 7 ⎯ NF (1) VCE = 1 V, IC = 5 mA, f = 2 GHz ⎯ 1.6 3 NF (2) VCE = 3 V, IC = 5 mA, f = 2 GHz ⎯ 1.5 3 ⎯ 0.45 0.85 pF Min Typ. Max Unit ⎪S21e⎪ (1) Cre VCB = 1 V, IE = 0, f = 1 MHz (Note 2) dB dB Electrical Characteristics Q2-Side (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current ICBO VCB = 5 V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cut-off current IEBO VEB = 1 V, IC = 0 ⎯ ⎯ 1 μA DC current gain hFE VCE = 1 V, IC = 5 mA 80 ⎯ 140 ⎯ fT GHz VCE = 1 V, IC = 5 mA 2 4.5 ⎯ 2 VCE = 1 V, IC = 5 mA, f = 1 GHz ⎯ 7.5 ⎯ 2 ⎪S21e⎪ (2) VCE = 3 V, IC = 20 mA, f = 1 GHz 7.5 10.5 ⎯ Noise figure NF VCE = 1 V, IC = 5 mA, f = 1 GHz ⎯ 1.4 2.2 dB Reverse transfer capacitance Cre VCB = 1 V, IE = 0, f = 1 MHz ⎯ 0.95 1.15 pF Transition frequency Insertion gain ⎪S21e⎪ (1) (Note 2) dB Note 2: Cre is measured by 3 terminal method with capacitance bridge. Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 2 2007-11-01 MT6L55E RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 3 2007-11-01