SEMICONDUCTOR TECHNICAL DATA High–Performance Silicon–Gate CMOS The MC54/74HC688 is identical in pinout to the LS688. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. The HC688 compares two 8–bit binary or BCD words and indicates whether or not they are equal. By using the Cascade Input, two or more of the devices may be cascaded to compare words of more than 8 bits. • • • • • • Output Drive Capability: 10 LSTTL Loads Outputs Directly Interface to CMOS, NMOS, and TTL Operating Voltage Range: 2 to 6 V Low Input Current: 1 µA High Noise Immunity Characteristic of CMOS Devices In Compliance with the Requirements Defined by JEDEC Standard No. 7A • Chip Complexity: 116 FETs or 29 Equivalent Gates J SUFFIX CERAMIC PACKAGE CASE 732–03 20 1 N SUFFIX PLASTIC PACKAGE CASE 738–03 20 1 DW SUFFIX SOIC PACKAGE CASE 751D–04 20 1 ORDERING INFORMATION MC54HCXXXJ MC74HCXXXN MC74HCXXXDW Ceramic Plastic SOIC LOGIC DIAGRAM A0 A1 A2 DATA WORD A INPUTS A3 A4 A5 A6 A7 B0 B1 DATA WORD B INPUTS B2 B3 B4 B5 B6 B7 CASCADE INPUT 2 4 PIN ASSIGNMENT 6 CASCADE INPUT A0 1 20 VCC 2 19 A=B 13 B0 3 18 15 A1 4 17 A7 B1 5 16 B6 8 11 17 19 3 A=B OUTPUT 5 7 9 12 6 15 A6 7 14 B5 A3 8 13 A5 B3 9 12 B4 10 11 GND 14 16 18 FUNCTION TABLE 1 Inputs PIN 20 = VCC PIN 10 = GND 10/95 Motorola, Inc. 1995 A2 B2 1 REV 6 Output Data Words Cascade A=B A=B A>B A<B X L L L H L H H H ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MC54/74HC688 MAXIMUM RATINGS* Symbol VCC Parameter DC Supply Voltage (Referenced to GND) Value Unit – 0.5 to + 7.0 V Vin DC Input Voltage (Referenced to GND) – 1.5 to VCC + 1.5 V Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V DC Input Current, per Pin ± 20 mA Iout DC Output Current, per Pin ± 25 mA ICC DC Supply Current, VCC and GND Pins ± 50 mA PD Power Dissipation in Still Air, Plastic or Ceramic DIP† SOIC Package† 750 500 mW Tstg Storage Temperature – 65 to + 150 _C Iin TL This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND (Vin or Vout) VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. v v _C Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) (Ceramic DIP) 260 300 * Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. †Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C Ceramic DIP: – 10 mW/_C from 100_ to 125_C SOIC Package: – 7 mW/_C from 65_ to 125_C For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D). ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ v ÎÎÎÎ v ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RECOMMENDED OPERATING CONDITIONS Symbol VCC Vin, Vout Parameter DC Supply Voltage (Referenced to GND) Min Max Unit 2.0 6.0 V 0 VCC V – 55 + 125 _C 0 0 0 1000 500 400 ns DC Input Voltage, Output Voltage (Referenced to GND) TA Operating Temperature, All Package Types tr, tf Input Rise and Fall Time (Figure 2) VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Guaranteed Limit Symbol Parameter Test Conditions VCC V – 55 to 25_C 85_C 125_C Unit VIH Minimum High–Level Input Voltage Vout = 0.1 V or VCC – 0.1 V |Iout| 20 µA 2.0 4.5 6.0 1.5 3.15 4.2 1.5 3.15 4.2 1.5 3.15 4.2 V VIL Maximum Low–Level Input Voltage Vout = 0.1 V or VCC – 0.1 V |Iout| 20 µA 2.0 4.5 6.0 0.3 0.9 1.2 0.3 0.9 1.2 0.3 0.9 1.2 V Minimum High–Level Output Voltage Vin = VIH or VIL |Iout| 20 µA 2.0 4.5 6.0 1.9 4.4 5.9 1.9 4.4 5.9 1.9 4.4 5.9 V 4.5 6.0 3.98 5.48 3.84 5.34 3.70 5.20 2.0 4.5 6.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 4.5 6.0 0.26 0.26 0.33 0.33 0.40 0.40 6.0 ± 0.1 ± 1.0 ± 1.0 VOH Vin = VIH or VIL |Iout| |Iout| VOL Maximum Low–Level Output Voltage Vin = VIH or VIL |Iout| 20 µA Vin = VIH or VIL |Iout| |Iout| Iin Maximum Input Leakage Current 4.0 mA 5.2 mA Vin = VCC or GND 4.0 mA 5.2 mA V µA Vin = VCC or GND 6.0 8 80 160 µA Iout = 0 µA NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D). ICC MOTOROLA Maximum Quiescent Supply Current (per Package) 2 High–Speed CMOS Logic Data DL129 — Rev 6 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎ v ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MC54/74HC688 AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns) Guaranteed Limit VCC V – 55 to 25_C 85_C 125_C tPLH, tPHL Maximum Propagation Delay, Input A or B to Output A = B (Figures 1 and 3) 2.0 4.5 6.0 210 42 36 265 53 45 315 63 54 ns tPLH, tPHL Maximum Propagation Delay, Cascade Input to Output A = B (Figures 2 and 3) 2.0 4.5 6.0 120 24 20 150 30 26 180 36 31 ns tTLH, tTHL Maximum Output Transition Time, Any Output (Figures 2 and 3) 2.0 4.5 6.0 75 15 13 95 19 16 110 22 19 ns Maximum Input Capacitance — 10 10 10 pF Symbol Cin Parameter Unit NOTES: 1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D). 2. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D). Typical @ 25°C, VCC = 5.0 V CPD Power Dissipation Capacitance (Per Package)* pF 30 * Used to determine the no–load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D). SWITCHING WAVEFORMS VALID INPUT A OR B tr tf VCC 90% 50% CASCADE 10% INPUT 50% GND tPLH A=B OUTPUT VALID tPHL 50% VCC GND tPHL tPLH 90% 50% 10% A=B OUTPUT tTHL tTLH Figure 2. Figure 1. TEST CIRCUITS TEST POINT OUTPUT DEVICE UNDER TEST CL* * Includes all probe and jig capacitance Figure 3. High–Speed CMOS Logic Data DL129 — Rev 6 3 MOTOROLA MC54/74HC688 TYPICAL APPLICATION Two or more HC688 8–bit Equality Comparators may be cascaded to compare binary or BCD numbers having more than 8 bits. One method of accomplishing this is shown here. An HC688 An–1 HC688 Ao A=B Bn 8 MOST– SIGNIFICANT BITS A=B Bo Bn–1 CASCADE INPUT HC688 CASCADE INPUT 8 LEAST– SIGNIFICANT BITS A=B OUTPUT CASCADE INPUT EXPANDED LOGIC DIAGRAM A7 B7 A6 B6 A5 B5 A4 B4 A3 B3 A2 B2 A1 B1 A0 B0 17 18 15 16 13 14 11 12 19 8 A=B OUTPUT 9 6 7 4 5 2 3 CASCADE 1 INPUT MOTOROLA 4 High–Speed CMOS Logic Data DL129 — Rev 6 MC54/74HC688 OUTLINE DIMENSIONS 20 11 1 10 J SUFFIX CERAMIC PACKAGE CASE 732–03 ISSUE E NOTES: 1. LEADS WITHIN 0.25 (0.010) DIAMETER, TRUE POSITION AT SEATING PLANE, AT MAXIMUM MATERIAL CONDITION. 2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 3. DIMENSIONS A AND B INCLUDE MENISCUS. B A L C F DIM A B C D F G H J K L M N N H G D J K M MILLIMETERS MIN MAX 23.88 25.15 6.60 7.49 3.81 5.08 0.38 0.56 1.40 1.65 2.54 BSC 0.51 1.27 0.20 0.30 3.18 4.06 7.62 BSC 0_ 15 _ 0.25 1.02 INCHES MIN MAX 0.940 0.990 0.260 0.295 0.150 0.200 0.015 0.022 0.055 0.065 0.100 BSC 0.020 0.050 0.008 0.012 0.125 0.160 0.300 BSC 0_ 15_ 0.010 0.040 SEATING PLANE N SUFFIX PLASTIC PACKAGE CASE 738–03 ISSUE E –A– 20 11 1 10 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. B L C –T– DIM A B C D E F G J K L M N K SEATING PLANE M N E G F J D 0.25 (0.010) M T A 11 –B– 10X P 0.010 (0.25) 1 M B M 10 20X D 0.010 (0.25) M T A B S J S F R X 45 _ C –T– 18X G High–Speed CMOS Logic Data DL129 — Rev 6 K SEATING PLANE M T B M M DW SUFFIX PLASTIC SOIC PACKAGE CASE 751D–04 ISSUE E –A– 20 20 PL 0.25 (0.010) 20 PL INCHES MIN MAX 1.010 1.070 0.240 0.260 0.150 0.180 0.015 0.022 0.050 BSC 0.050 0.070 0.100 BSC 0.008 0.015 0.110 0.140 0.300 BSC 0_ 15 _ 0.020 0.040 MILLIMETERS MIN MAX 25.66 27.17 6.10 6.60 3.81 4.57 0.39 0.55 1.27 BSC 1.27 1.77 2.54 BSC 0.21 0.38 2.80 3.55 7.62 BSC 0_ 15_ 0.51 1.01 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.150 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN EXCESS OF D DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A B C D F G J K M P R MILLIMETERS MIN MAX 12.65 12.95 7.40 7.60 2.35 2.65 0.35 0.49 0.50 0.90 1.27 BSC 0.25 0.32 0.10 0.25 0_ 7_ 10.05 10.55 0.25 0.75 INCHES MIN MAX 0.499 0.510 0.292 0.299 0.093 0.104 0.014 0.019 0.020 0.035 0.050 BSC 0.010 0.012 0.004 0.009 0_ 7_ 0.395 0.415 0.010 0.029 M 5 MOTOROLA MC54/74HC688 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] –TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MOTOROLA ◊ CODELINE 6 *MC54/74HC688/D* MC54/74HC688/D High–Speed CMOS Logic Data DL129 — Rev 6