TOSHIBA SF3G48

SF3G48,SF3J48,USF3G48,USF3J48
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF3G48,SF3J48,USF3G48,USF3J48
MEDIUM POWER CONTROL APPLICATIONS
l Repetitive Peak Off−State Voltage : VDRM = 400,600V
Repetitive Peak Reverse Voltage
: VRRM = 400,600V
l Average On−State Current
: IT (AV) = 3A
l Gate Trigger Current
: IGT = 10mA MAX.
Unit: mm
SF3G48·SF3J48
JEDEC
JEITA
TOSHIBA
USF3G48·USF3J48
―
―
13−10J1B
JEDEC
JEITA
TOSHIBA
―
―
13−10J2B
Weight: 1.7g
MARKING
*1
F3G48
MARK
F3J48
TYPE
NAME
SF3G48, USF3G48
SF3J48, USF3J48
*2
1
2001-07-10
SF3G48,SF3J48,USF3G48,USF3J48
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage and
Repetitive Peak
Reverse Voltage
SF3G48
USF3G48
Non−Repetitive Peak
Reverse Voltage
(Non−Repetitive <5ms,
Tj = 0~125°C)
SF3G48
USF3G48
SF3J48
USF3J48
SF3J48
USF3J48
Average On−State Current
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non−Repetitive)
2
I t Limit Value
SYMBOL
RATING
UNIT
400
VDRM
VRRM
V
600
500
VRSM
V
720
IT (AV)
3
A
IT (RMS)
4.7
A
50 (50Hz)
ITSM
55 (60Hz)
2
A
2
I t
12.5
A s
Critical Rate of Rise of On−State
Current
(Note 1)
di / dt
100
A / µs
Peak Gate Power Dissipation
PGM
5
W
PG (AV)
0.5
W
Peak Forward Gate Voltage
VFGM
10
V
Peak Reverse Gate Voltage
VRGM
−5
V
Peak Forward Gate Current
IGM
2
A
Tj
−40~125
°C
Tstg
−40~125
°C
Average Gate Power Dissipation
Junction Temperature
Storage Temperature Range
Note 1: VDRM = 0.5 × Rated
ITM ≤ 12A
tgw ≥ 10µs
tgr ≤ 250ns
igp = IGT × 2.0
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Repetitive Peak Off−State Current and
Repetitive Peak Reverse Current
IDRM
IRRM
VDRM = VRRM = Rated
―
―
10
µA
Peak On−State Voltage
VTM
ITM = 12A
―
―
1.5
V
Gate Trigger Voltage
VGT
―
―
1.0
V
Gate Trigger Current
IGT
―
―
10
mA
Gate Non−Trigger Voltage
VGD
VD = Rated × 2 / 3, Tc = 125°C
0.2
―
―
V
VDRM = Rated, Tc = 125°C
Exponential Rise
―
50
―
V / µs
Critical Rate of Rise of Off−State Voltage
dv / dt
VD = 6V, RL = 10Ω
Holding Current
IH
VD = 6V, ITM = 1A
―
―
40
mA
Latching Current
IL
VD = 6V, f = 50Hz
tgw = 50µs, iG = 30mA
―
―
50
mA
Rth (j−c)
Junction to Case, DC
―
―
3.6
°C / W
Thermal Resistance
2
2001-07-10
SF3G48,SF3J48,USF3G48,USF3J48
3
2001-07-10
SF3G48,SF3J48,USF3G48,USF3J48
4
2001-07-10
SF3G48,SF3J48,USF3G48,USF3J48
5
2001-07-10
SF3G48,SF3J48,USF3G48,USF3J48
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
6
2001-07-10