TOSHIBA HN1B04F

HN1B04F
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
HN1B04F
Unit: mm
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
Switching application
Q1:
Excellent hFE linearity
z
: hFE(2) =25 (Min.) at VCE = −6V IC = −400mA
Q2:
z
Excellent hFE linearity
: hFE(2) =25 (Min.) at VCE = 6V IC = 400mA
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
−35
V
Collector-emitter voltage
VCEO
−30
V
Emitter-base voltage
VEBO
−5
V
IC
−500
mA
Collector current
1.EMITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
JEDEC
―
JEITA
―
TOSHIBA
2-3N1A
Weight: 0.015g(typ.)
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
IC
500
mA
Collector current
Q1,Q2 Common Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
PC*
300
mW
Tj
150
°C
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating. 200mW per element must be exceeded.
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HN1B04F
Q1 Electrical Characteristics (Ta = 25°C)
Symbol
Test
Circuit
Collector cut-off current
ICBO
―
Emitter cut-off current
IEBO
Characteristic
Min
Typ.
Max
Unit
VCB = −35V, IE = 0
―
―
−100
nA
―
VEB = −5V, IC = 0
―
―
−100
nA
hFE(1)
―
VCE = −1V, IC = −100mA
70
―
400
hFE(2)
―
VCE = −6V, IC = −400mA
25
―
―
VCE (sat)
―
IC = −100mA, IB = −10mA
―
−0.1
−0.25
V
Base-Emitter Voltage
VBE
―
VCE = −1V, IC = −100mA
―
−0.8
−1.0
V
Transition frequency
fT
―
VCE = −6V, IC = −20mA
―
200
―
MHz
Cob
―
VCB = −6V, IE = 0, f = 1MHz
―
7
―
pF
Min
Typ.
Max
Unit
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Test Condition
Q2 Electrical Characteristics (Ta = 25°C)
Symbol
Test
Circuit
Collector cut-off current
ICBO
―
VCB = 35V, IE = 0
―
―
100
nA
Emitter cut-off current
IEBO
―
VEB = 5V, IC = 0
―
―
100
nA
hFE(1)
―
VCE = 1V, IC = 100mA
70
―
400
hFE(2)
―
VCE = 6V, IC = 400mA
25
―
―
VCE (sat)
―
IC = 100mA, IB = 10mA
―
0.1
0.25
V
Base-Emitter Voltage
VBE
―
VCE = 1V, IC = 100mA
―
0.8
1.0
V
Transition frequency
fT
―
VCE = 6V, IC = 20mA
―
300
―
MHz
Cob
―
VCB = 6V, IE = 0, f = 1MHz
―
7
―
pF
Characteristic
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Marking
Test Condition
Equivalent Circuit (Top View)
6
5
50
4
Q2
Q1
1
2
2
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HN1B04F
Q1 (PNP transistor)
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HN1B04F
Q2 (NPN transistor)
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HN1B04F
(Q1, Q2 Common)
PC* – Ta
500
COLLECTOR POWER
DISSPATION
PC (mW)
400
300
200
100
0
0
25
50
75
100
AMBIENT TEMPERATURE
125
Ta
150
175
(°C)
*Total Rating.
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HN1B04F
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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