TLP4027G TOSHIBA Photocoupler Photorelay TLP4027G Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4027G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the 1-form-A/B photorelay with 350-V withstanding voltage. · Normally closed (1-form-B) device, normally opened (1-form-A) device · Peak off-state voltage: 350 V (min) · Trigger LED current: 3 mA (max) · On-state current: 90 mA (max) · On-state resistance: 50 Ω (max) · Isolation voltage: 1500 Vrms (min) Pin Configuration (top view) 1 8 JEDEC ― JEITA ― TOSHIBA 11-10H1 Weight: 0.2 g (typ.) 2 7 1: Anode (1b) 3 6 2: Cathode (1b) 3: Anode (1a) 4: Cathode (1a) 5: Drain D1 (1a) 6: Drain D2 (1a) 4 5 7: Drain D3 (1b) 8: Drain D4 (1b) 1 2003-01-14 TLP4027G Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit IF 50 mA DIF/°C -0.5 mA/°C Peak forward current IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C VOFF 350 V ION 90 mA DION/°C -0.9 mA/°C Tj 125 °C Storage temperature range Tstg -55 to 125 °C Operating temperature range Topr -40 to 85 °C Lead soldering temperature (10 s) Tsol 260 °C BVS 1500 Vrms Forward current LED Forward current derating (Ta > = 25°C) Off-state output terminal voltage One channel operation Detector On-state current On-state current derating (Ta > = 25°C) Two channel operations (1a1b simultaneous operation) One channel operation Two channel operations (1a1b simultaneous operation) Junction temperature Isolation voltage (AC, 1 min, R.H. < = 60%) (Note 1) Note 1: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage VDD ¾ ¾ 280 V Forward current IF 5 10 25 mA On-state current ION ¾ ¾ 90 mA Operating temperature Topr -20 ¾ 65 °C Electrical Characteristics (Ta = 25°C) Detector LED Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ¾ ¾ 10 mA Capacitance CT V = 0, f = 1 MHz ¾ 30 ¾ pF VOFF = 350 V ¾ ¾ 1 mA V = 0, f = 1 MHz, IF = 5 mA ¾ 30 ¾ V = 0, f = 1 MHz ¾ 30 ¾ Off-state current Capacitance (1b) Capacitance (1a) IOFF COFF 2 pF 2003-01-14 TLP4027G Coupled Electrical Characteristics (Ta = 25°C) Characteristics Trigger LED current Return LED current On-state resistance (Note 2) Form Symbol Test Condition Min Typ. Max Unit 1a IFT ION = 90 mA 1b IFC IOFF = 10 mA ¾ 1 3 mA 1a IFC IOFF = 10 mA 1b IFT ION = 90 mA 0.1 ¾ ¾ mA ¾ RON ION = 90 mA, t < 1s ¾ 30 35 ION = 90 mA ¾ 40 50 Min Typ. Max Unit W Note 2: 1-form-A: IF = 5 mA, 1-form-B: IF = 0 mA Isolation Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Capacitance input to output CS VS = 0, f = 1 MHz Isolation resistance RS VS = 500 V, R.H. < = 60% ¾ 0.8 ¾ pF 5 ´ 1010 1014 ¾ W 1500 ¾ ¾ AC, 1 s, in oil ¾ 3000 ¾ DC, 1 min, in oil ¾ 3000 ¾ Vdc Min Typ. Max Unit ¾ 0.25 1 ¾ 0.5 1 ¾ 0.3 1 ¾ 0.15 1 AC, 1 min Isolation voltage BVS Vrms Switching Characteristics (Ta = 25°C) Characteristics 1b 1a Symbol Turn-on time tON Turn-off time tOFF Turn-on time tON Turn-off time tOFF Test Condition RL = 200 W VDD = 20 V, IF = 5 mA (Note 3) RL = 200 W VDD = 20 V, IF = 5 mA (Note 3) ms ms Note 3: Switching time test circuit IF 1 1b 8 RL VDD IF VOUT 2 VOUT 7 10% tON IF 3 1a 6 RL 90% tOFF VDD IF VOUT 4 VOUT 5 10% tON 3 90% tOFF 2003-01-14 TLP4027G Characteristics curves for 1-form-A/B IF – Ta ION – Ta (mA) 160 Allowable on-state current ION 80 Allowable forward current IF (mA) 100 60 40 20 0 -20 0 20 40 60 80 100 120 80 40 0 -20 120 Ambient temperature Ta (°C) 0 20 40 60 80 100 120 Ambient temperature Ta (°C) IF – VF 100 Ta = 25°C Forward current IF (mA) 30 10 3 1 0.3 0.1 0.6 0.8 1 1.2 Forward voltage 1.4 VF 1.6 1.8 (V) 4 2003-01-14 TLP4027G Characteristics curves for 1-form-B RON – Ta IFC – Ta 50 5 ION = 90 mA (mA) t<1s 40 t<1s 4 IFC 30 3 Trigger LED current On-state resistance RON (W) ION = 90 mA 20 10 0 -40 -20 0 20 40 60 80 2 1 0 -40 100 -20 Ambient temperature Ta (°C) 0 IOFF – Ta 80 100 ION – VON Ta = 25°C (mA) 300 IF = 5 mA 100 On-state current ION (nA) 60 150 VOFF = 350 V Off-state current IOFF 40 Ambient temperature Ta (°C) 1000 30 10 3 1 0 20 20 40 60 80 100 50 0 -50 -100 -150 -4 100 -3 Ambient temperature Ta (°C) -2 -1 0 On-state voltage 1 2 VON (V) 3 4 tON, tOFF – IF 3000 tON, tOFF – Ta Ta = 25°C 3000 VDD = 20 V, RL = 200 W IF = 5 mA 100 30 10 1 tOFF 3 5 10 Input current 30 IF 50 (ms) tON, tOFF tON 300 1000 300 Switching time Switching time tON, tOFF (ms) VDD = 20 V, RL = 200 W 1000 100 tON 100 30 10 -40 300 (mA) tOFF -20 0 20 40 60 80 100 Ambient temperature Ta (°C) 5 2003-01-14 TLP4027G Characteristics curves for 1-form-A IFT – Ta RON – Ta 5 ION = 90 mA IF = 5 mA t<1s (mA) t<1s 4 IFC 40 ION = 90 mA 30 3 Trigger LED current On-state resistance RON (W) 50 20 10 0 -20 0 20 40 60 80 2 1 0 -40 100 -20 0 IOFF – Ta 100 (mA) Ta = 25°C 30 On-state current ION (nA) 80 150 VOFF = 350 V Off-state current IOFF 60 ION – VON 100 10 3 1 -40 -20 0 20 40 60 80 100 50 0 -50 -100 -150 -4 100 IF = 5 mA -3 Ambient temperature Ta (°C) -2 -1 tON, tOFF – IF 1 2 VON (V) 3 4 tON, tOFF – Ta 2000 Ta = 25°C 1000 0 On-state voltage 2000 (ms) VDD = 20 V, RL = 200 W tON, tOFF (ms) 300 tON 100 Switching time tON, tOFF 40 Ambient temperature Ta (°C) Ambient temperature Ta (°C) Switching time 20 30 VDD = 20 V, RL = 200 W 1000 IF = 5 mA tON 300 100 tOFF 30 tOFF 10 1 3 10 Input current 30 IF 10 -40 100 (mA) -20 0 20 40 60 80 100 Ambient temperature Ta (°C) 6 2003-01-14 TLP4027G RESTRICTIONS ON PRODUCT USE 020704EBC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium (GaAs) Arsenide is a substance used in the products described in this document. GaAs dust or vapor is harmful to the human body. Do not break, cut, crushu or dissolve chemically. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 2003-01-14