TLP227GA, TLP227GA-2 TOSHIBA Photocoupler Photo Relay TLP227GA, TLP227GA-2 Modem Telecommunications PBXs Unit: mm The Toshiba TLP227GA series consist of a gallium arsenide infrared-emitting diode optically coupled to a photo-MOSFET in a 4-pin DIP or a 8-pin DIP package, and has a peak off-State voltage of 400 V. · Normally off function · TLP227GA TLP227GA-2 : DIP8 (2 form A) · Peak off-state voltage : 400 V (min) · Trigger LED current : 3 mA (max) · On-state current : 120 mA (max) : DIP4 (1 form A) · On-state resistance : 35Ω (max) · Isolation voltage : 2500 Vrms (min) Pin Configuration (top view) JEDEC ― JEITA ― TOSHIBA TLP227GA-2 TLP227GA Weight: 0.26 g (typ.) 1 4 1 8 2 3 2 7 3 6 4 5 1: Anode 2: Cathode 3: Drain 4: Drain 11-5B2 1, 3 : Anode 2, 4 : Cathode 5 : Drain D1 6 : Drain D2 7 : Drain D3 8 : Drain D4 JEDEC ― JEITA ― TOSHIBA 11-10C4 Weight: 0.54 g (typ.) 1 2002-03-13 TLP227GA, TLP227GA-2 Maximum Rating (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA DIF/°C -0.5 mA/°C Peak forward current (100 ms pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C VOFF 400 V ION 120 Ma DION/°C -1.2 mA/°C Tj 125 °C Storage temperature range Tstg -55~125 °C Operating temperature range Topr -40~85 °C Lead soldering temperature (10 s) Tsol 260 °C Isolation voltage (AC, 1 min., R.H. < = 60%) (Note 1) BVS 2500 Vrms Forward current Led Forward current derating (Ta > = 25°C) Off-state output terminal voltage TLP227GA Detector On-state current TLP227GA-2 One channel Both channel TLP227GA On-state One current channel rating TLP227GA-2 (Ta > 25°C) = Both channel Junction temperature Note 1: LED pins are shorted together. Detector pins are also shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage VDD ¾ ¾ 320 V Forward current IF 5 7.5 25 mA On-state current ION ¾ ¾ 100 mA Operating temperature Topr -20 ¾ 65 °C Individual Electrical Characteristics (Ta = 25°C) Detector Led Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ¾ ¾ 10 mA Capacitance CT V = 0, f = 1 MHz ¾ 30 ¾ pF Off-state current IOFF VOFF = 400 V ¾ ¾ 1 mA Capacitance COFF V = 0, f = 1 MHz ¾ ¾ ¾ pF 2 2002-03-13 TLP227GA, TLP227GA-2 Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Trigger LED current IFT On-state resistance RON Test Condition Min Typ. Max Unit ION = 120 mA ¾ 1 3 mA ION = 120 mA, IF = 5 mA ¾ 18 35 W Min Typ. Max Unit 0.8 ¾ pF ¾ W Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance input to output CS Isolation resistance RS Test Condition VS = 0 V, f = 1 MHz ¾ 10 VS = 500 V, R.H. < = 60% 5 ´ 10 BVS 10 2500 ¾ ¾ AC, 1 s (in oil) ¾ 5000 ¾ DC, 1 min (in oil) ¾ 5000 ¾ Vdc Min Typ. Max Unit ¾ ¾ 1 ¾ ¾ 1 AC, 1 min Isolation voltage 14 Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Turn-on time tON Turn-off time tOFF Test Condition RL = 200 W VDD = 20 V, IF = 5 mA (Note 2) ms Note 2: Switching time test circuit IF TLP227GA 4 1 2 RL VDD IF VOUT 3 VOUT 90% 10% tON IF TLP227GA-2 1 8 2 7 RL tOFF VDD VOUT 3 2002-03-13 TLP227GA, TLP227GA-2 IF – Ta ION – Ta 100 280 240 (mA) On-state current ION Allowable forward current IF (mA) 80 60 40 20 200 160 120 80 40 0 -20 0 20 40 60 80 100 0 -20 120 0 Ambient temperature Ta (°C) 20 40 IF – VF Ta = 25°C 3 1 0.1 0.6 0.8 1 1.2 Forward voltage 1.4 1.6 Ta = 25°C IF = 5 mA 100 0 -100 -200 -3 1.8 -2 VF (V) -1 RON – Ta 1 2 3 (V) IFT – Ta 5 ION = 120 mA ION = 120 mA (mA) IF = 5 mA t<1s IFT 40 Trigger led current (W) 0 On-state voltage VON 60 RON 120 (mA) On-state current ION (mA) Forward current IF 10 0.3 On-state resistance 100 ION – VON 200 30 30 20 10 0 -20 80 Ambient temperature Ta (°C) 100 50 60 0 20 40 60 80 t<1s 4 3 2 1 0 -40 100 Ambient temperature Ta (°C) -20 0 20 40 60 80 100 Ambient temperature Ta (°C) 4 2002-03-13 TLP227GA, TLP227GA-2 tON, tOFF – IF tON, tOFF – Ta 3000 Ta = 25°C tON (ms) IF = 5 mA VDD = 20 V RL = 200 W 1000 tON, tOFF (ms) 500 300 100 Switching time tON, tOFF Switching time 1000 tOFF 50 30 0.5 1 3 5 10 Input current IF 30 50 800 tON 600 400 200 0 -40 100 (mA) VDD = 20 V, RL = 200 W IF = 5 mA tOFF -20 0 20 40 60 80 100 Ambient temperature Ta (°C) IOFF – Ta 300 VOFF = 400 V Off-state current IOFF (nA) 100 30 10 3 1 0.3 0.1 -20 0 20 40 60 80 100 Ambient temperature Ta (°C) 5 2002-03-13 TLP227GA, TLP227GA-2 RESTRICTIONS ON PRODUCT USE 000707EBC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2002-03-13