Composite Transistors XP01531 Silicon NPN epitaxial planer transistor 2.1±0.1 0.65 Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SC3130 × 2 elements 0 to 0.1 ● 0.7±0.1 ■ Basic Part Number of Element 0.12 – 0.02 0.2 ● 2.0±0.1 ■ Features 0.65 0.425 ● 0.2±0.05 Unit: mm For high frequency, oscillation and mixing ■ Absolute Maximum Ratings Parameter (Ta=25˚C) 1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2) 4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC–88A S–Mini Type Package (5–pin) Symbol Ratings Unit Collector to base voltage VCBO 15 V Rating Collector to emitter voltage of element Emitter to base voltage Collector current VCEO 10 V VEBO 3 V IC 50 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 ˚C 1 Tstg –55 to +150 ˚C 2 Storage temperature Marking Symbol: 9F Internal Connection 3 ■ Electrical Characteristics Parameter Tr1 Tr2 5 4 (Ta=25˚C) Symbol Conditions min Collector to emitter voltage VCEO IC = 2mA, IB = 0 10 Emitter to base voltage VEBO IE = 10µA, IC = 0 3 ICBO VCB = 10V, IE = 0 Collector cutoff current 0.2±0.1 typ max Unit V V ICEO VCE = 10V, IB = 0 Forward current transfer ratio hFE VCE = 4V, IC = 5mA Collector to emitter saturation voltage VCE(sat) IC = 20mA, IB = 4mA Transition frequency fT VCB = 4V, IE = –5mA, f = 200MHz Collector output capacitance Cob VCB = 4V, IE = 0, f = 1MHz Collector to base parameter rbb'·CC VCB = 4V, IE = –5mA, f = 31.9MHz Common base reverse transfer capacitance Crb VCB = 4V, IE = 0, f = 1MHz 0.25 75 200 1.4 1.9 1 µA 10 µA 400 0.5 V 2.5 GHz 0.9 1.1 pF 11.8 13.5 ps 0.35 pF 1 Composite Transistors XP01531 PT — Ta IC — VCE 80 120 100 80 60 40 IB=500µA 40 400µA 300µA 20 200µA Collector current IC (mA) 140 60 Ta=75˚C –25˚C 40 30 20 10 100µA 20 40 60 0 0 80 100 120 140 160 0 2 3 1 Ta=75˚C 25˚C 0.1 –25˚C 0.03 3 10 30 100 Collector current IC (mA) Cob — VCB f=1MHz IE=0 Ta=25˚C 1.2 1.0 0.8 0.6 0.4 0.2 0 1 3 10 0.4 30 100 Collector to base voltage VCB (V) 0.8 1.2 1.6 2.0 Base to emitter voltage VBE (V) fT — I E 4.0 300 Ta=75˚C 240 25˚C 180 –25˚C 120 60 VCB=4V Ta=25˚C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.1 0.3 1 3 10 30 Collector current IC (mA) 1.6 1.4 0 12 VCE=4V Forward current transfer ratio hFE 10 1 10 hFE — IC 30 0.3 8 360 IC/IB=10 0.01 0.1 6 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 0.3 4 Transition frequency fT (GHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C 50 160 0 Collector output capacitance Cob (pF) VCE=4V Ta=25˚C 0 2 IC — VBE 60 180 Collector current IC (mA) Total power dissipation PT (mW) 200 100 0 –0.1 –0.3 –1 –3 –10 –30 Emitter current IE (mA) –100