Composite Transistors XN4509 Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification +0.2 2.8 –0.3 +0.25 3 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 50 V Rating Collector to emitter voltage of element Emitter to base voltage Collector current VCEO 50 V VEBO 5 V IC 50 mA PT 200 mW Total power dissipation Overall Junction temperature Storage temperature +0.1 +0.1 0 to 0.05 0.4±0.2 ■ Absolute Maximum Ratings Tj 150 ˚C Tstg –55 to +150 ˚C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: AO Internal Connection 6 Tr1 4 Parameter Collector to base voltage 1 2 5 ■ Electrical Characteristics 1.45±0.1 +0.1 4 0.1 to 0.3 Parameter 0.5 –0.05 0.95 2 0.16–0.06 2SC4561 × 2 elements 5 0.95 +0.2 2.9 –0.05 1.1–0.1 ● +0.2 ■ Basic Part Number of Element 1.9±0.1 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 0.8 ● 0.65±0.15 1 6 ■ Features ● 1.5 –0.05 0.3 –0.05 0.65±0.15 Tr2 3 (Ta=25˚C) Symbol Conditions min typ max Unit VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V ICBO VCB = 10V, IE = 0 0.1 µA ICEO VCE = 10V, IB = 0 100 µA Forward current transfer ratio hFE VCE = 10V, IC = 2mA Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA 0.06 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 250 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 1.5 pF Collector cutoff current 200 500 0.3 V 1 XN4509 Composite Transistors PT — Ta IC — VCE IC — VBE 60 120 240 VCE=10V 120 80 IB=300µA 80 250µA 60 200µA 150µA 40 100µA 40 80 120 2 VCE(sat) — IC 3 1 0.3 Ta=75˚C –25˚C 0.01 10 3 30 100 300 1000 Collector current IC (mA) Collector output capacitance Cob (pF) f=1MHz IE=0 Ta=25˚C 5 4 3 2 1 0 1 3 10 30 100 Collector to base voltage VCB (V) 2 8 10 0 12 0.2 0.4 0.6 0.8 1.2 fT — I E VCB=10V Ta=25˚C 500 Ta=75˚C 400 25˚C –25˚C 300 200 100 0 0.1 1.0 Base to emitter voltage VBE (V) 600 0.3 1 3 10 30 Collector current IC (mA) Cob — VCB 6 6 VCE=10V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 10 1 4 600 IC/IB=10 30 0.03 20 hFE — IC 100 25˚C 30 Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C) 0.1 40 0 0 160 Transition frequency fT (MHz) 0 –25˚C 50µA 0 0 Ta=75˚C 10 20 40 Collector current IC (mA) 160 25˚C 50 100 200 Collector current IC (mA) Total power dissipation PT (mW) Ta=25˚C 100 500 400 300 200 100 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) 100