TOSHIBA RN1102F

RN1101F∼RN1106F
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1101F,RN1102F,RN1103F
RN1104F,RN1105F,RN1106F
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit in mm
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN2101F~RN2106F
Equivalent Circuit And Bias Resister Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN1101F
4.7
4.7
RN1102F
10
10
RN1103F
22
22
RN1104F
47
47
RN1105F
2.2
47
RN1106F
4.7
47
JEDEC
―
EIAJ
―
TOSHIBA
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
RN1101F~1106F
RN1101F~1104F
RN1105F, 1106F
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1101F~1106F
2-2H1A
Weight: 2.3 mg
Symbol
Rating
Unit
VCBO
50
V
VCEO
50
V
10
VEBO
5
V
IC
100
mA
PC
100
mW
Tj
150
°C
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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2007-11-01
RN1101F∼RN1106F
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off
current
Test
Circuit
Min
Typ.
Max
VCB = 50V, IE = 0
―
―
100
VCE = 50V, IB = 0
―
―
500
0.82
―
1.52
0.38
―
0.71
0.17
―
0.33
0.082
―
0.15
0.078
―
0.145
0.074
―
0.138
RN1101F
30
―
―
RN1102F
50
―
―
70
―
―
80
―
―
RN1105F
80
―
―
RN1106F
80
―
―
―
0.1
0.3
RN1101F
1.1
―
2.0
RN1102F
1.2
―
2.4
1.3
―
3.0
1.5
―
5.0
RN1105F
0.6
―
1.1
RN1106F
0.7
―
1.3
1.0
―
1.5
0.5
―
0.8
RN1101F
~1106F
Symbol
ICBO
―
ICEO
Test Condition
RN1101F
RN1102F
Emitter cut-off current
RN1103F
RN1104F
VEB = 10V, IC = 0
IEBO
―
RN1105F
VEB = 5V, IC = 0
RN1106F
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
RN1103F
RN1104F
RN1101F
~1106F
RN1103F
RN1104F
RN1101F
~1104F
RN1105F,
1106F
hFE
VCE (sat)
VI (ON)
VI (OFF)
―
―
―
―
VCE = 5V, IC = 10mA
IC = 5mA, IB = 0.25mA
VCE = 0.2V, IC = 5mA
VCE = 5V, IC = 0.1mA
Unit
nA
mA
―
V
V
V
Transition frequency
RN1101F
~1106F
fT
―
VCE = 10V, IC = 5mA
―
250
―
MHz
Collector Output
capacitance
RN1101F
~1106F
Cob
―
VCB = 10V, IE = 0,
f = 1MHz
―
3
6
pF
RN1101F
3.29
4.7
6.11
RN1102F
7
10
13
15.4
22
28.6
RN1104F
32.9
47
61.1
RN1105F
1.54
2.2
2.86
RN1106F
3.29
4.7
6.11
RN1101F
~1104F
0.9
1.0
1.1
0.0421
0.0468
0.0515
0.09
0.1
0.11
Input resistor
Resistor ratio
RN1103F
RN1105F
R1
R1/R2
―
―
RN1106F
2
―
―
kΩ
2007-11-01
RN1101F∼RN1106F
3
2007-11-01
RN1101F∼RN1106F
4
2007-11-01
RN1101F∼RN1106F
5
2007-11-01
RN1101F∼RN1106F
6
2007-11-01
RN1101F∼RN1106F
Type Name
Marking
RN1101F
RN1102F
RN1103F
RN1104F
RN1105F
RN1106F
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2007-11-01
RN1101F∼RN1106F
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2007-11-01