TC7W14F/FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7W14F,TC7W14FU,TC7W14FK Schmitt Inverter The TC7W14 is high speed C2MOS Schmitt Inverter fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the C2MOS low power dissipation. Pin configuration and function are the same as the TC7WU04 but the inputs have 25% VCC hysteresis and with its schmitt trigger function, the TC7W14 can be used as a line receivers which will receive slow input signals. All inputs are equipped with protection circuits against static discharge or transient excess voltage. TC7W14F TC7W14FU Features • High speed: tpd = 11 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 1μA (max) at Ta = 25°C • High noise immunity: VH = 1.1 V at VCC = 5V • Output drive capability: 10 LSTTL loads • • Symmetrical output impedance: |IOH| = IOL = 4mA (min) Balanced propagation delays: tpLH ∼ − tpHL • Wide operating voltage range: VCC (opr) = 2 to 6V TC7W14FK Marking TC7W14F Part No. 7 W 1 4 F Lot No. Weight SOP8-P-1.27: 0.05 g (typ.) SSOP8-P-0.65: 0.02 g (typ.) SSOP8-P-0.50A: 0.01 g (typ.) TC7W14FU Part No. 7W14 Lot No. TC7W14FK Part No. W 14 1 2009-09-30 TC7W14F/FU/FK Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage range VCC −0.5 to 7 V DC input voltage VIN −0.5 to VCC + 0.5 V VOUT −0.5 to VCC + 0.5 V Input diode current IIK ±20 mA Output diode current IOK ±20 mA DC output current IOUT ±25 mA DC VCC/ground current ICC ±25 mA Power dissipation PD Storage temperature range Tstg −65 to 150 °C TL 260 °C DC output voltage Lead temperature (10 s) 300 (FM8, SM8) mW 200 (US8) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Pin Configuration (top view) VCC 8 1Y 7 3A 6 2Y 5 1A 1 3Y 2 2A 3 GND 4 Logic Diagram Truth Table 1A 1Y 2A 2Y 3A 3Y 2 A Y L H H L 2009-09-30 TC7W14F/FU/FK Operating Ranges Characteristics Symbol Rating Unit Supply voltage VCC 2 to 6 V Input voltage VIN 0 to VCC V VOUT 0 to VCC V Topr −40 to 85 °C Output voltage Operating temperature range Electrical Characteristics DC Electrical Characteristics Characteristics High level Symbol VCC (V) Min Typ. Max Min Max 2.0 1.0 1.25 1.5 1.0 1.5 4.5 2.3 2.7 3.15 2.3 3.15 6.0 3.0 3.5 4.2 3.0 4.2 2.0 0.3 0.65 0.9 0.3 0.9 4.5 1.13 1.6 2.0 1.13 2.0 6.0 1.5 2.3 2.6 1.5 2.6 2.0 0.3 0.6 1.0 0.3 1.0 4.5 0.6 1.1 1.4 0.6 1.4 6.0 0.8 1.2 1.7 0.8 1.7 2.0 1.9 2.0 ⎯ 1.9 ⎯ 4.5 4.4 4.5 ⎯ 4.4 ⎯ 6.0 5.9 6.0 ⎯ 5.9 ⎯ IOH = −4 mA 4.5 4.18 4.31 ⎯ 4.13 ⎯ IOH = −5.2 mA 6.0 5.68 5.80 ⎯ 5.63 ⎯ 2.0 ⎯ 0 0.1 ⎯ 0.1 4.5 ⎯ 0 0.1 ⎯ 0.1 6.0 ⎯ 0 0.1 ⎯ 0.1 IOL = 4 mA 4.5 ⎯ 0.17 0.26 ⎯ 0.33 IOL = 5.2 mA 6.0 ⎯ 0.18 0.26 ⎯ 0.33 ⎯ VP Threshold voltage Low level Hysteresis voltage ⎯ VN ⎯ VH IOH = −20 μA High level VOH VIN = VIL Output voltage IOL = 20 μA Low level VOL Ta = −40 to 85°C Ta = 25°C Test Condition VIN = VIH Unit V V V Input leakage current IIN VIN = VCC or GND 6.0 ⎯ ⎯ ±0.1 ⎯ ±1.0 μA Quiescent supply current ICC VIN = VCC or GND 6.0 ⎯ ⎯ 1.0 ⎯ 10.0 μA 3 2009-09-30 TC7W14F/FU/FK AC Electrical Characteristics (CL = 15 pF, VCC = 5 V, Ta = 25°C) Characteristics Symbol tTLH Output transition time tTHL tpLH Propagation delay time Ta = 25°C Test Condition tpHL Unit Min Typ. Max ⎯ ⎯ 4 8 ns ⎯ ⎯ 11 21 ns AC Electrical Characteristics (CL = 50 pF, input tr = tf = 6 ns) Characteristics Output transition time Propagation delay time Symbol tTLH tTHL tpLH tpHL Input capacitance CIN Power dissipation capacitance CPD Ta = −40 to 85°C Ta = 25°C Test Condition ⎯ ⎯ Unit VCC (V) Min Typ. Max Min Max 2.0 ⎯ 30 75 ⎯ 95 4.5 ⎯ 8 15 ⎯ 19 6.0 ⎯ 7 13 ⎯ 16 2.0 ⎯ 42 125 ⎯ 155 4.5 ⎯ 14 25 ⎯ 31 6.0 ⎯ 12 21 ⎯ 26 ⎯ 5 10 ⎯ 10 pF ⎯ 28 ⎯ ⎯ ⎯ pF ⎯ (Note) ns ns Note: CPD is defined as the value of internal equivalent capacitance of IC which is calculated from the operating current consumption without load (refer to test circuit). Average operating current can be obtained by the equation hereunder. ICC (opr) = CPD • VCC • fIN + ICC/2 (per gate) 4 2009-09-30 TC7W14F/FU/FK Package Dimensions Weight: 0.05 g (typ.) 5 2009-09-30 TC7W14F/FU/FK Package Dimensions Weight: 0.02 g (typ.) 6 2009-09-30 TC7W14F/FU/FK Package Dimensions Weight: 0.01 g (typ.) 7 2009-09-30 TC7W14F/FU/FK RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. 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