MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB(Typ.) (@f=1GHz) • High Gain: |S21e|2=11dB(Typ.) (@f=1GHz) Marking M U PW-Mini JEDEC JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (Typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 1.5 V Collector current IC 80 mA Base current IB 10 mA Collector power dissipation PC 400 mW Collector power dissipation PC(Note1) 1.8 W Tj 150 °C Tstg −55 to 150 °C Junction temperature Storage temperature range Note.1 : The device is mounted on a ceramic board (25mm X 25mm X 0.8 mm (t)) Note.2 : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-01 MT3S20P Microwave Characteristics (Ta = 25°C) Characteristics Transition frequency Symbol Noise figure Typ. Max Unit GHz VCE=5V, IC=30mA 5 7 ⎯ VCE=5V, IC=50mA, f=500MHz ⎯ 16.5 ⎯ 2 |S21e| (2) VCE=5V, IC=50mA, f=1GHz 9 11 ⎯ NF VCE=5V, IC=20mA, f=1GHz ⎯ 1.45 2 dB 27.5 31.5 ⎯ dBmW Min Typ. Max Unit rd 3 order intermodulation distortion output intercept point Min 2 fT |S21e| (1) Insertion gain Test Condition OIP3 VCE=5V,IC=50mA,f=500MHz, ⊿f=1MHz dB Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current ICBO VCB=10V, IE=0 ⎯ ⎯ 0.1 µA Emitter cut-off current IEBO VEB=1V, IC=0 ⎯ ⎯ 0.5 µA DC current gain hFE VCE=5V, IC=50mA 100 150 200 - Reverse transfer capacitance Cre VCB=5V, IE=0, f=1MHz (Note3) ⎯ 0.85 1.1 pF Note.3 : Cre is measured using a 3-terminal method with capacitance bridge. Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle. 2 2009-12-01 MT3S20P hFE-IC IC-VBE 1000 100 Collector-current IC(mA) DC current gain hFE COMMON EMITTER ＶＣＥ＝５Ｖ Ｔａ＝２５℃ 100 10 COMMON EMITTER ＶＣＥ＝５Ｖ Ｔａ＝２５℃ 10 1 0.1 0.01 0.001 1 10 100 0 Collector-current IC(mA) 0.2 0.4 0.6 0.8 1 Base-emitter voltage VBE(V) IC-VCE fT-IC 8 IB=800μA 80 720μA 640μA 560μA 480μA 400μA 60 320μA 40 240μA 160μA 20 80μA 0 ＶＣＥ＝５Ｖ Ｔａ＝２５℃ 7 6 5 4 3 2 1 0 0 3 6 9 12 15 1 Collector-emitter voltage VCE(V) 10 Collector-current IC(mA) |S21e|2-IC Insertion gain |S21e|2(dB) 4 ＶＣＥ＝５Ｖ Ｔａ＝２５℃ 20 NF, Ga -IC 14 12 10 f=1000MHz 8 6 4 2 12 ＶＣＥ＝５Ｖ ｆ＝１ＧＨｚ Ｔａ＝２５℃ 3.5 f=500MHz 18 16 Noise figure NF(dB) 22 Ｇａ 3 9 2.5 2 6 1.5 ＮＦ 1 3 0.5 0 1 10 100 100 1 Collector-current IC(mA) Associated gain Ga(dB) Collector-current IC(mA) 100 Transition frequency fT(GHz) ＣＯＭＭＯＮ ＥＭＩＴＴＥＲ Ｔａ＝２５℃ 0 100 10 Collector-current IC(mA) 3 2009-12-01 MT3S20P ＩＥ＝０ ｆ＝１ＭＨｚ Ｔａ＝２５℃ 2.5 Cob 2 1.5 Cre 1 0.5 0 0.1 1 10 Collector-base voltage VCB(V) Third order intermodulation distortion output intercept point OIP3(dBmW) OIP3-IC 3 Output capacitance Cob(pF) Reverse transfer capacitance Cre(pF) Cre,Cob-VCB 38 36 34 VCE=5V 32 30 VCE=4V 28 26 24 22 Ｐｉｎ＝－１５ｄＢｍＷ ｆ＝５００ＭＨｚ （⊿１ＭＨｚ） Ｔａ＝２５℃ 20 18 10 100 Collector-current IC(mA) Collector power dissipation PC(mW) PC-Ta 2000 The device is mounted on a ceramicboard(25mm×25mm×0.8mm(t)) 1800 1600 1400 1200 1000 800 Device only 600 400 200 0 0 25 50 75 100 125 150 Ambient temperature Ta(°C ) 4 2009-12-01 MT3S20P RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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