2SC5087 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base current IB 40 mA Collector current IC 80 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C Tstg −55~125 °C Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― JEITA ― TOSHIBA 2-3J1C Weight: 0.012 g (typ.) Microwave Characteristics (Ta = 25°C) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition Min Typ. Max Unit GHz VCE = 10 V, IC = 20 mA 5 7 ⎯ 2 VCE = 10 V, IC = 20 mA, f = 500 MHz ⎯ 18 ⎯ 2 VCE = 10 V, IC = 20 mA, f = 1 GHz 9.5 13 ⎯ NF (1) VCE = 10 V, IC = 5 mA, f = 500 MHz ⎯ 1 ⎯ NF (2) VCE = 10 V, IC = 5 mA, f = 1 GHz ⎯ 1.1 2 Min Typ. Max Unit fT ⎪S21e⎪ (1) ⎪S21e⎪ (2) dB dB Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current ICBO VCB = 10 V, IE = 0 ⎯ ⎯ 1 μA Emitter cut-off current IEBO VEB = 1 V, IC = 0 ⎯ ⎯ 1 μA VCE = 10 V, IC = 20 mA 80 ⎯ 240 ⎯ 1.1 1.6 pF ⎯ 0.65 1.05 pF DC current gain hFE (Note 1) Output capacitance Cob Reverse transfer capacitance Cre VCB = 10 V, IE = 0, f = 1 MHz (Note 2) Note 1: hFE classification O: 80~160, Y: 120~240 Note 2: Cre is measured by 3 terminal method with capacitance bridge. 1 2007-11-01 2SC5087 Marking 2 1 Type Name hFE Rank CO 3 4 2 2007-11-01 2SC5087 VCE = 10 V Ta = 25°C DC CURRENT GAIN 300 200 100 70 50 30 1 2 3 5 7 10 20 30 COLLECTOR CURRENT IC 50 70 100 (mA) OUTPUT CAPACITANSE Cob (pF) REVERSE TRANSFER CAPACITANCE Cre hFE 500 (pF) hFE – IC 1000 Cob, Cre – VCB 10 f = 1 MHz Ta = 25°C 5 3 2 Cob Cre 1 0.7 0.5 0.3 0.1 0.2 0.3 7 VCB 10 (V) (dB) VCE = 10 V f = 1 GHz Ta = 25°C ⎪S21e⎪ 2 8 6 INSERTION GAIN (GHz) TRANSITION FREQUENCY fT Ta = 25°C 4 2 3 5 7 10 30 12 8 4 0 1 50 70 100 (mA) 3 5 7 10 30 COLLECTOR CURRENT IC 2 ⎪S21e⎪ – f 50 70 100 (mA) NF – IC 5 VCE = 10 V VCE = 10 V (dB) IC = 20 mA 30 Ta = 25°C NF 2 (dB) 5 2 35 20 NOISE FIGURE ⎪S21e⎪ 3 ⎪S21e⎪ – IC COLLECTOR CURRENT IC INSERTION GAIN 2 16 VCE = 10 V 10 0 0.1 1 COLLECTOR-BASE VOLTAGE fT – IC 10 0 1 0.5 0.7 0.3 0.5 0.7 0 FREQUENCY f 3 5 7 4 3 2 1 0 1 10 (GHz) f = 1 GHz Ta = 25°C 3 5 7 10 30 COLLECTOR CURRENT IC 3 50 70 100 (mA) 2007-11-01 2SC5087 2 ⎪S21e⎪ – VCE PC – Ta (mW) PC 14 12 COLLECTOR POWER DISSIPATION INSERTION GAIN ⎪S21e⎪ 2 (dB) 16 10 8 6 4 IC = 20 mA f = 1 GHz Ta = 25°C 2 0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE S-Parameter 10 VCE 12 (V) 200 160 120 80 40 0 0 25 50 75 100 AMBIENT TEMPERATURE 125 Ta 150 (°C) ZO = 50 Ω, Ta = 25°C VCE = 10 V, IC = 5 mA Frequency S11 S21 S12 S22 MHz Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. 200 0.793 −82.4 11.923 133.4 0.050 52.7 0.788 −36.4 400 0.736 −128.0 7.835 108.5 0.066 38.0 0.584 −53.4 600 0.719 −152.1 5.578 94.5 0.071 34.1 0.490 −63.5 800 0.701 −168.6 4.279 84.4 0.073 33.9 0.445 −72.2 1000 0.698 178.9 3.451 76.6 0.074 36.7 0.424 −80.5 1200 0.697 168.3 2.855 69.9 0.076 40.8 0.413 −88.9 1400 0.699 159.4 2.440 64.0 0.078 46.6 0.404 −97.3 1600 0.703 150.8 2.121 59.3 0.084 52.5 0.401 −105.4 1800 0.713 142.9 1.876 54.5 0.091 58.3 0.398 −112.6 2000 0.722 134.7 1.681 50.3 0.100 63.5 0.398 −119.6 VCE = 10 V, IC = 20 mA Frequency S11 S21 S12 S22 MHz Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. 200 0.655 −129.4 20.724 113.2 0.031 48.0 0.496 −59.6 400 0.650 −161.5 11.288 95.5 0.040 50.4 0.319 −74.1 600 0.660 −176.3 7.643 86.4 0.049 56.4 0.263 −83.5 800 0.666 172.8 5.758 79.6 0.059 60.0 0.242 −92.9 1000 0.667 164.0 4.605 74.2 0.070 63.6 0.233 −102.0 1200 0.668 156.8 3.809 69.3 0.080 65.9 0.229 −111.0 1400 0.677 148.4 3.277 65.1 0.091 68.2 0.226 −119.1 1600 0.676 141.1 2.862 61.2 0.104 70.0 0.223 −126.5 1800 0.688 133.9 2.559 57.5 0.117 71.2 0.220 −132.4 2000 0.690 126.7 2.303 54.1 0.131 72.4 0.217 −137.8 4 2007-11-01 2SC5087 S21e VCE = 10 V IC = 5 mA Ta = 25°C S11e VCE = 10 V IC = 5 mA Ta = 25°C (Unit: Ω) j50 90° 120° j25 16 j150 2.0 j10 60° j100 1.6 12 150° f = 0.2 GHz 0.4 j250 30° 8 0.8 1.2 1.6 2.0 2 1.2 10 0 25 50 250 100 ±180° 0.8 16 12 8 0° 0 4 −j250 −j10 −150° 0.4 f = 0.2 GHz −j25 −30° −j150 −j100 −60° −120° −90° −j50 S12e VCE = 10 V IC = 5 mA Ta = 25°C 120° S22e VCE = 10 V IC = 5 mA Ta = 25°C (Unit: Ω) 90° 0.20 60° j50 j25 0.16 j100 j150 0.12 150° 30° 2.0 0.08 1.6 f = 0.2 GHz 1.2 0.04 0.8 0.4 ±180°0.20 0.16 0.12 0.08 0.04 j10 0° 0 0 j250 10 25 2.0 −150° −j10 −30° 100 50 250 1.2 1.6 0.8 −j250 0.4 f = 0.2 GHz −j150 −j25 −60° −120° −90° −j100 −j50 5 2007-11-01 2SC5087 S21e VCE = 10 V IC = 20 mA Ta = 25°C S11e VCE = 10 V IC = 20 mA Ta = 25°C (Unit: Ω) j50 90° 120° j25 20 f = 0.2 GHz j150 2.0 1.6 j10 60° j100 15 150° 0.4 j250 1.2 0.8 10 0 25 250 100 50 ±180° 20 15 10 30° 10 0.8 1.2 5 1.6 2.0 0° 0 5 0.4 −j250 −j10 −150° f = 0.2 GHz −30° −j150 −j25 −j100 −60° −120° −90° −j50 S12e VCE = 10 V IC = 20 mA Ta = 25°C 120° S22e VCE = 10 V IC = 20 mA Ta = 25°C (Unit: Ω) 90° 0.20 60° j50 j25 0.16 j100 2.0 j150 0.12 150° 1.6 0.08 j10 1.2 0.04 0.4 ±180°0.20 0.16 0.12 0.08 0.04 30° j250 0.8 f = 0.2 GHz 0° 0 0 10 25 50 2.0 1.2 −150° 100 250 0.8 0.4 −j10 −30° 1.6 −j250 f = 0.2 GHz −j150 −j25 −60° −120° −90° −j100 −j50 6 2007-11-01 2SC5087 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-11-01