TK20E60U MOSFETs Silicon N-Channel MOS (DTMOS) TK20E60U 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.165 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 12 S (typ.) (3) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-220 1 2012-02-06 Rev.1.0 TK20E60U unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25 25 Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 20 Drain current (pulsed) (Note 1) IDP 40 PD 190 W Power dissipation (Tc = 25) A Single-pulse avalanche energy (Note 2) EAS 144 mJ Avalanche current (Note 3) IAR 10 A Repetitive avalanche energy (Note 3) EAR 19 mJ Reverse drain current (DC) (Note 1) IDR 20 A Reverse drain current (pulsed) (Note 1) IDRP 40 Channel temperature Tch 150 Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance Rth(ch-c) 0.658 /W Channel-to-ambient thermal resistance Rth(ch-a) 83.3 Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25 (initial), L = 2.52 mH, RG = 25 Ω, IAR = 10 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2012-02-06 Rev.1.0 TK20E60U 6. Electrical Characteristics unless otherwise specified) 6.1. Static Characteristics (Ta = 25 25 Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Symbol Test Condition IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = 600 V, VGS = 0 V Min Typ. Max Unit ±1 µA 100 V(BR)DSS ID = 10 mA, VGS = 0 V 600 V Vth VDS = 10 V, ID = 1 mA 3.0 5.0 Drain-source on-resistance RDS(ON) VGS = 10 V, ID = 10 A 0.165 0.19 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 10 A 3 12 S Min Typ. Max Unit 1470 pF 150 3500 40 unless otherwise specified) 6.2. Dynamic Characteristics (Ta = 25 25 Characteristics Symbol Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Test Condition VDS = 10 V, VGS = 0 V, f = 1 MHz Switching time (rise time) tr Switching time (turn-on time) ton 80 tf 12 toff 100 Switching time (fall time) Switching time (turn-off time) See Figure 6.2.1 ns Fig. 6.2.1 Switching Time Test Circuit unless otherwise specified) 25 6.3. Gate Charge Characteristics (Ta = 25 Characteristics Total gate charge (gate-source plus gate-drain) Symbol Qg Test Condition VDD ≈ 400 V, VGS = 10 V, ID = 20 A Min Typ. Max Unit 27 nC Gate-source charge Qgs 16 Gate-drain charge Qgd 11 Typ. Max unless otherwise specified) 25 6.4. Source-Drain Characteristics (Ta = 25 Characteristics Symbol Test Condition Min Unit Diode forward voltage VDSF IDR = 20 A, VGS = 0 V -1.7 V Reverse recovery time trr 450 ns Reverse recovery charge Qrr IDR = 20 A, VGS = 0 V -dIDR/dt = 100 A/µs 8.1 µC 3 2012-02-06 Rev.1.0 TK20E60U 7. Marking Fig. 7.1 Marking 4 2012-02-06 Rev.1.0 TK20E60U 8. Characteristics Curves (Note) Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 |Yfs| - ID Fig. 8.6 RDS(ON) - ID 5 2012-02-06 Rev.1.0 TK20E60U Fig. 8.7 RDS(ON) - Ta Fig. 8.8 IDR - VDS Fig. 8.9 C - VDS Fig. 8.10 Vth - Ta Fig. 8.11 PD - Tc (Guaranteed Maximum) Fig. 8.12 Dynamic Input/Output Characteristics 6 2012-02-06 Rev.1.0 TK20E60U Fig. 8.13 rth/Rth(ch-c) - tw (Guaranteed Maximum) Fig. 8.15 EAS - Tch (Guaranteed Maximum) Fig. 8.14 Safe Operating Area (Guaranteed Maximum) Fig. 8.16 Test Circuit/Waveform Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 7 2012-02-06 Rev.1.0 TK20E60U Package Dimensions Unit: mm Weight: 1.93 g (typ.) Package Name(s) TOSHIBA: 2-10X1A Nickname: TO-220 8 2012-02-06 Rev.1.0 TK20E60U RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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