TPC8134
MOSFETs
Silicon P-Channel MOS (U-MOS)
TPC8134
1. Applications
•
Lithium-Ion Secondary Batteries
•
Power Management Switches
2. Features
(1)
Small footprint due to small and thin package
(2)
Low drain-source on-resistance: RDS(ON) = 39 mΩ (typ.) (VGS = -10 V)
(3)
Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)
(4)
Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
SOP-8
unless otherwise specified)
25
4. Absolute Maximum Ratings (Note) (Ta = 25
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Symbol
Rating
Unit
VDSS
-40
V
VGSS
-25/+20
(Note 1)
ID
-5
A
(Note 1)
IDP
-20
Power dissipation
(t = 10 s)
(Note 2)
PD
1.9
Power dissipation
(t = 10 s)
(Note 3)
PD
1.0
W
(Note 4)
EAS
11
mJ
Single-pulse avalanche energy
W
Avalanche current
IAR
-5
A
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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5. Thermal Characteristics
Characteristics
Symbol
Max
Unit
Channel-to-ambient thermal resistance
(t = 10 s)
(Note 2)
Rth(ch-a)
65.7
/W
Channel-to-ambient thermal resistance
(t = 10 s)
(Note 3)
Rth(ch-a)
125
/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 4: VDD = -24 V, Tch = 25 (initial), L = 0.5 mH, RG = 25 Ω, IAR = -5 A
Fig. 5.1 Device Mounted on a Glass-Epoxy
Board (a)
Note:
Fig. 5.2 Device Mounted on a Glass-Epoxy
Board (b)
This transistor is sensitive to electrostatic discharge and should be handled with care.
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6. Electrical Characteristics
unless otherwise specified)
6.1. Static Characteristics (Ta = 25
25
Characteristics
Symbol
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
Drain cut-off current
Drain-source breakdown voltage
Drain-source breakdown voltage
(Note 5)
Min
Typ.
Max
Unit
±0.1
µA
IDSS
VDS = -40 V, VGS = 0 V
-10
V(BR)DSS
ID = -10 mA, VGS = 0 V
-40
V(BR)DSX
ID = -10 mA, VGS = 10 V
-30
Vth
VDS = -10 V, ID = -0.1 mA
-0.8
-2.0
RDS(ON)
VGS = -4.5 V, ID = -2.5 A
49
66
VGS = -10 V, ID = -2.5 A
39
52
Gate threshold voltage
Drain-source on-resistance
Test Condition
V
mΩ
Note 5: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode.
unless otherwise specified)
6.2. Dynamic Characteristics (Ta = 25
25
Characteristics
Symbol
Input capacitance
Ciss
Test Condition
VDS = -10 V, VGS = 0 V, f = 1 MHz
Min
Typ.
Max
Unit
890
pF
Reverse transfer capacitance
Crss
100
Output capacitance
Coss
130
Switching time (rise time)
tr
8
Switching time (turn-on time)
ton
15
tf
30
toff
125
Switching time (fall time)
Switching time (turn-off time)
See Figure 6.2.1.
ns
Fig. 6.2.1 Switching Time Test Circuit
unless otherwise specified)
6.3. Gate Charge Characteristics (Ta = 25
25
Characteristics
Symbol
Total gate charge (gate-source plus
gate-drain)
Test Condition
VDD ≈ -32 V, VGS = -10 V, ID = -5 A
Qg
Min
Typ.
Max
Unit
20
nC
Gate-source charge 1
Qgs1
2.2
Gate-drain charge
Qgd
5
Min
Typ.
Max
Unit
unless otherwise specified)
25
6.4. Source-Drain Characteristics (Ta = 25
Characteristics
Reverse drain current (pulsed)
Diode forward voltage
Symbol
(Note 6)
Test Condition
IDRP
-20
A
VDSF
IDR = -5 A, VGS = 0 V
1.2
V
Note 6: Ensure that the channel temperature does not exceed 150.
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7. Marking (Note)
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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8. Characteristics Curves (Note)
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 RDS(ON) - ID
Fig. 8.6 RDS(ON) - Ta
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Fig. 8.7 IDR - VDS
Fig. 8.8 Capacitance - VDS
Fig. 8.9 Vth - Ta
Fig. 8.10 Dynamic Input/Output Characteristics
Fig. 8.11 PD - Ta
(Guaranteed Maximum)
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Fig. 8.12 rth - tw
(Guaranteed Maximum)
Fig. 8.13 Safe Operating Area
(Guaranteed Maximum)
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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Package Dimensions
Unit: mm
Weight: 0.085 g (typ.)
Package Name(s)
TOSHIBA: 2-5R1S
Nickname: SOP-8
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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
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written permission, reproduction is permissible only if reproduction is without alteration/omission.
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for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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