TC7W66F/FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7W66F,TC7W66FU,TC7W66FK Dual Bilateral Switch The TC7W66 is a high speed CMOS Dual Bilateral Switch fabricated with silicon gate CMOS technology. It consists of four independent high speed switches capable of controlling either digital or analog signals while maintaining the CMOS low power dissipation. Control input (C) is provided to control the switch. The switch turns ON while the C input is high, and the switch turns OFF while low. All inputs are equipped with protection circuits against static discharge or transient excess voltage. TC7W66F TC7W66FU Features • High speed: tpd = 7 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 1 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Low ON resistance: RON = 50 Ω (typ.) at VCC = 9 V • High degree of linearity: THD = 0.05 (typ.) at VCC = 5 V • Pin and function compatible with TC4W66 TC7W66FK Marking FM8 Part No. 7 W 6 6 F Lot No. Weight SOP8-P-1.27: 0.05 g (typ.) SSOP8-P-0.65: 0.02 g (typ.) SSOP8-P-0.50A: 0.01 g (typ.) SM8 Part No. 7W66 Pin Configuration (top view) Lot No. OUT/IN 2 IN/OUT 2 VCC CONT 1 5 8 7 6 US8 Part No. W 66 2 4 3 1 IN/OUT 1 CONT 2 GND OUT/IN 1 1 2009-09-30 TC7W66F/FU/FK Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage range VCC −0.5 to 13 V DC input voltage VIN −0.5 to VCC + 0.5 V VOUT −0.5 to VCC + 0.5 V Input diode current IIK ±20 mA Output diode current IOK ±20 mA DC output current IOUT ±25 mA DC VCC/ground current ICC ±25 mA Power dissipation PD Storage temperature range Tstg −65 to 150 °C TL 260 °C DC output voltage Lead temperature (10 s) 300 (FM8, SM8) 200 (US8) mW Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Logic Diagram CONT 1 IN/OUT 1 CONT 2 IN/OUT 2 (7) (1) (3) X1 I I (5) (2) (6) OUT/IN 1 OUT/IN 2 Logic Diagram (1/2 TC7W66) IN/OUT Truth Table OUT/IN Control Switch Function H ON L OFF CONT 2 2009-09-30 TC7W66F/FU/FK Operating Ranges Characteristics Symbol Rating Unit Supply voltage VCC 2 to 12 V Control input voltage VIN 0 to VCC V Switch I/O voltage VI/O 0 to VCC V Operating temperature range Topr −40 to 85 °C Input rise and fall time 0 to 1000 (VCC = 2.0 V) 0 to 500 (VCC = 4.5 V) 0 to 400 (VCC = 6.0 V) tr, tf ns 0 to 250 (VCC = 10.0 V) Electrical Characteristics DC Electrical Characteristics Characteristics High level Symbol VIHC ⎯ Control input voltage Low level VILC ⎯ VIN = VIHC VI/O = VCC to GND II/O ≤ 1 mA ON resistance Ta = –40 to 85°C Ta = 25°C Test Condition RON VIN = VIHC VI/O = VCC or GND II/O ≤ 1 mA VIN = VIHC VI/O = VCC to GND II/O ≤ 1 mA VCC (V) Min Typ. Max Min Max 2.0 1.5 ⎯ ⎯ 1.5 ⎯ 4.5 3.15 ⎯ ⎯ 3.15 ⎯ 9.0 6.3 ⎯ ⎯ 6.3 ⎯ 12.0 8.4 ⎯ ⎯ 8.4 ⎯ 2.0 ⎯ ⎯ 0.5 ⎯ 0.5 4.5 ⎯ ⎯ 1.35 ⎯ 1.35 9.0 ⎯ ⎯ 2.7 ⎯ 2.7 12.0 ⎯ ⎯ 3.6 ⎯ 3.6 4.5 ⎯ 96 170 ⎯ 200 9.0 ⎯ 55 85 ⎯ 100 12.0 ⎯ 45 80 ⎯ 90 2.0 ⎯ 160 ⎯ ⎯ ⎯ 4.5 ⎯ 70 100 ⎯ 130 9.0 ⎯ 50 75 ⎯ 95 12.0 ⎯ 45 70 ⎯ 90 4.5 ⎯ 10 ⎯ ⎯ ⎯ 9.0 ⎯ 5 ⎯ ⎯ ⎯ 12.0 ⎯ 5 ⎯ ⎯ ⎯ Unit V Ω Difference of ON resistance between switches ΔRON Input/output leakage current (switch off) IOFF VOS = VCC or GND VIS = GND or VCC VIN = VILC 12.0 ⎯ ⎯ ±100 ⎯ ±1000 nA Switch input leakage current (switch on output open) IIZ VOS = VCC or GND VINH = VIHC 12.0 ⎯ ⎯ ±100 ⎯ ±1000 nA Control input current IIN VIN = VCC or GND 6.0 ⎯ ⎯ ±100 ⎯ ±1000 nA 6.0 ⎯ ⎯ 1.0 ⎯ 10.0 Quiescent supply current ICC VIN = VCC or GND 9.0 ⎯ ⎯ 4.0 ⎯ 40.0 12.0 ⎯ ⎯ 8.0 ⎯ 80.0 3 Ω μA 2009-09-30 TC7W66F/FU/FK AC Electrical Characteristics (CL = 50 pF, input tr = tf = 6 ns) Characteristics Symbol Phase difference between input and output Output enable time Output disable time Maximum control input frequency φI/O tpZL tpZH tpLZ tpHZ ⎯ RL = 1 kΩ RL = 1 kΩ RL = 1 kΩ ⎯ Ta = −40 to 85°C Ta = 25°C Test Condition CL = 15 pF VOUT = 1/2 VCC VCC (V) Min Typ. Max Min Max 2.0 ⎯ 10 50 ⎯ 65 4.5 ⎯ 4 10 ⎯ 13 9.0 ⎯ 3 8 ⎯ 10 12.0 ⎯ 3 7 ⎯ 9 2.0 ⎯ 18 100 ⎯ 125 4.5 ⎯ 8 20 ⎯ 25 9.0 ⎯ 6 12 ⎯ 22 12.0 ⎯ 6 12 ⎯ 18 2.0 ⎯ 20 115 ⎯ 145 4.5 ⎯ 10 23 ⎯ 29 9.0 ⎯ 8 20 ⎯ 25 12.0 ⎯ 8 18 ⎯ 22 2.0 ⎯ 30 ⎯ ⎯ ⎯ 4.5 ⎯ 30 ⎯ ⎯ ⎯ 9.0 ⎯ 30 ⎯ ⎯ ⎯ 12.0 ⎯ 30 ⎯ ⎯ ⎯ Unit ns ns ns MHz Control input capacitance CIN ⎯ ⎯ 5 10 ⎯ 10 pF Switch terminal capacitance CI/O ⎯ ⎯ 6 ⎯ ⎯ ⎯ pF Feed through capacitance CIOS ⎯ ⎯ 0.5 ⎯ ⎯ ⎯ pF Power dissipation capacitance CPD ⎯ 15 ⎯ ⎯ ⎯ pF (Note) Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD • VCC • fIN + ICC/2 Analog Switch Characteristics (GND = 0 V, Ta = 25°C) Characteristics Symbol Typ. Test Condition Unit VCC (V) Sine wave distortion (T.H.D) Frequency response (switch ON) ⎯ fmax fIN = 1 kHz, VIN = 4.0 Vp-p @VCC = 4.5 V RL = 10 kΩ, VIN = 8.0 Vp-p @VCC = 9.0 V CL = 50 pF Adjust fIN voltage to obtain 0dBm at VOS Increase fIN frequency until dB Meter reads −3dB RL = 50 Ω,CL = 10 pF fIN = 1 MHz, sine wave VIN is centered at VCC/2 Adjust input for 0dBm RL = 600 Ω, CL = 50 pF fIN = 1 MHz, sine wave 4.5 0.05 % 9.0 0.04 4.5 200 9.0 200 4.5 −60 9.0 −60 MHz Feedthrough attenuation (switch OFF) ⎯ Crosstalk (control input to signal output) ⎯ RL = 600 Ω, CL = 50 pF fIN = 1 MHz, square wave (tr = tf = 6 ns) 4.5 60 9.0 100 Crosstalk (between any switches) ⎯ Adjust VIN to obtain 0dBm at input RL = 600 Ω, CL = 50 pF fIN = 1 MHz, sine wave 4.5 −60 9.0 −60 4 dB mV dB 2009-09-30 TC7W66F/FU/FK Switching Characteristics Test Circuits 1. tpLZ, tpHZ, tpZL, tpZH 6 ns 6 ns VCC 90% VC VCC O/I I/O 50% 1 kΩ GND 10% tpZH 90% VO/I S1 = VCC S2 = GND VOH 50% tpZL VOL tpLZ VOH VO/I S1 = GND S2 = VCC GND tpHZ S2 50 pF S1 50% 10% C from P.G. VCC 90% 50% 10% VOL 2. Cross Talk (control input-switch output) fin = 1 MHz, duty = 50%, tr = tf = 6 ns VCC VCC GND VCC C 50 pF 50 pF GND 600 Ω O/I I/O 600 Ω 600 Ω from P.G. 3. Feed Through Attenuation VCC VCC C 0.1 μF 600 Ω VIN I/O O/I GND 5 2009-09-30 TC7W66F/FU/FK 4. Clos, CI/O CIOS VCC VCC C COS CI/O O/I I/O GND 5. Cross Talk (between any two switches) VCC VCC C VCC 50 pF GND 10 pF O/I I/O 600 Ω 600 Ω C 50 pF O/I I/O 600 Ω 600 Ω 0.1 μF 50 Ω VIN 6. Frequency Response (switch ON) VCC C 0.1 μF I/O O/I GND 6 2009-09-30 TC7W66F/FU/FK Package Dimensions Weight: 0.05 g (typ.) 7 2009-09-30 TC7W66F/FU/FK Package Dimensions Weight: 0.02 g (typ.) 8 2009-09-30 TC7W66F/FU/FK Package Dimensions Weight: 0.01 g (typ.) 9 2009-09-30 TC7W66F/FU/FK RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. 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