TL(RE,RME,SE,OE,YE,GE)28C(F) TOSHIBA InGaAℓP LED TLRE28C(F),TLRME28C(F),TLSE28C(F),TLOE28C(F), TLYE28C(F),TLGE28C(F) Unit: mm ○ Panel Circuit Indicator • Lead(Pb)-free products (lead: Sn-Ag-Cu) • 4.3x5mm • InGaAℓP technology • Colored Transparent lens • Lineup: 6 colors (red,yellow, green) • Excellent low current light output • High intensity light emission • Applications: message boards, dashboard displays Lineup Product Name Color Material JEDEC ― TLRE28C(F) Red InGaAℓP EIAJ ― TLRME28C(F) Red InGaAℓP TOSHIBA TLSE28C(F) Red InGaAℓP Weight: 0.25 g (Typ.) TLOE28C(F) Orange InGaAℓP TLYE28C(F) Yellow InGaAℓP TLGE28C(F) Green InGaAℓP 4-5AQ1 Absolute Maximum Ratings (Ta = 25°C) Product Name Forward Current IF (mA) Reverse Voltage VR (V) Power Dissipation PD (mW) TLRE28C(F) 50 4 120 TLRME28C(F) 50 4 120 TLSE28C(F) 50 4 120 TLOE28C(F) 50 4 120 TLYE28C(F) 50 4 120 TLGE28C(F) 50 4 120 Operating Temperature Topr (°C) Storage Temperature Tstg (°C) −40~100 −40~120 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-10-01 TL(RE,RME,SE,OE,YE,GE)28C(F) Electrical and Optical Characteristics (Ta = 25°C) Product Name Reverse Current IR Forward Voltage VF λd λP Δλ IF Min Typ. IF Typ. Max IF Max VR TLRE28C(F) 630 (644) 20 20 85 200 20 1.9 2.4 20 50 4 TLRME28C(F) 626 (636) 23 20 85 200 20 1.9 2.4 20 50 4 TLSE28C(F) 613 (623) 20 20 85 300 20 1.9 2.4 20 50 4 TLOE28C(F) 605 (612) 20 20 153 500 20 2.0 2.4 20 50 4 TLYE28C(F) 587 (590) 17 20 153 350 20 2.0 2.4 20 50 4 TLGE28C(F) 571 (574) 17 20 47.6 150 20 2.0 2.4 20 50 4 mA μA V Unit • Luminous Intensity IV Typ. Emission Wavelength nm mA mcd mA V Please be careful of the following: Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: below the lead stopper of the device) • If the lead is formed, the lead should be formed up to below the lead stopper of the device without forming stress to the resin. Soldering should be performed after lead forming. • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. 2 2007-10-01 TL(RE,RME,SE,OE,YE,GE)28C(F) TLRE28C(F) IF – V F IV – IF 3000 IV (mcd) Ta = 25 °C 50 30 Luminous intensity Forward current IF (mA) 100 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 2.2 1000 100 10 2.3 Ta = 25 °C 1 10 Forward current (V) IV – Tc Relative luminous intensity 3 1 0.5 0.3 20 Case temperature (mA) 40 Tc 60 IF = 20mA Ta = 25 °C 0.8 0.6 0.4 0.2 0 580 0.1 80 600 620 640 Wavelength (°C) 660 680 700 λ (nm) Radiation pattern IF (mA) IF – Ta Allowable forward current IV Relative luminous intensity 5 0 IF Relative luminous intensity – Wavelength 1.0 10 −20 100 80 60 40 20 0 0 20 40 60 Ambient temperature 3 80 Ta 100 120 (°C) 2007-10-01 TL(RE,RME,SE,OE,YE,GE)28C(F) TLRME28C(F) IF – V F IV – IF 3000 IV (mcd) Ta = 25 °C 50 30 Luminous intensity Forward current IF (mA) 100 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 2.2 1000 100 10 2.3 Ta = 25 °C (V) IV – Tc Relative luminous intensity 3 1 0.5 0.3 Case temperature (mA) 40 Tc 60 80 IF = 20mA Ta = 25 °C 0.8 0.6 0.4 0.2 0 580 0.1 600 620 640 Wavelength (°C) 660 680 700 100 120 λ (nm) Radiation pattern IF (mA) IF – Ta Allowable forward current IV Relative luminous intensity 5 20 IF Relative luminous intensity – Wavelength 1.0 0 100 Forward current 10 −20 10 1 80 60 40 20 0 0 20 40 60 Ambient temperature 4 80 Ta (°C) 2007-10-01 TL(RE,RME,SE,OE,YE,GE)28C(F) TLSE28C(F) IF – V F IV – IF 10000 IV (mcd) Ta = 25 °C 50 30 Luminous intensity Forward current IF (mA) 100 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 2.2 1000 100 10 2.3 1 Relative luminous intensity IV 0.5 0.3 40 Tc 60 80 IF = 20mA Ta = 25 °C 0.8 0.6 0.4 0.2 0 560 0.1 580 600 620 Wavelength (°C) 640 660 680 λ (nm) Radiation pattern IF (mA) IF – Ta Allowable forward current Relative luminous intensity 1 Case temperature (mA) IF Relative luminous intensity – Wavelength 1.0 20 100 Forward current IV – Tc 0 10 (V) 3 −20 Ta = 25 °C 80 60 40 20 0 0 20 40 60 Ambient temperature 5 80 Ta 100 120 (°C) 2007-10-01 TL(RE,RME,SE,OE,YE,GE)28C(F) TLOE28C(F) IF – V F IV – IF 100 10000 IV (mcd) 30 Luminous intensity Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1000 100 10 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 2.2 2.3 Ta = 25 °C 1 10 100 Forward current (V) IV – Tc (mA) IF Relative luminous intensity – Wavelength 1.0 IF =IF20 mA = 20mA Ta Ta = 25°C = 25 °C Relative luminous intensity 1 0.5 0.3 0.1 20 Case temperature 40 Tc 60 0.8 0.6 0.4 0.2 0 540 80 560 (°C) 580 600 Wavelength 620 640 660 100 120 λ (nm) Radiation pattern IF – Ta (mA) 0 IF −20 Allowable forward current Relative luminous intensity IV 3 80 60 40 20 0 0 20 40 60 Ambient temperature 6 80 Ta (°C) 2007-10-01 TL(RE,RME,SE,OE,YE,GE)28C(F) TLYE28C(F) IF – V F IV – IF 10000 IV (mcd) Ta = 25 °C 50 30 Luminous intensity Forward current IF (mA) 100 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 2.2 1000 100 10 2.3 Ta = 25 °C 1 10 100 Forward current (V) IV – Tc (mA) IF Relative luminous intensity – Wavelength 3 1.0 Relative luminous intensity 1 0.5 0.3 0.1 20 Case temperature 40 Tc 60 Ta = 25 °C 0.8 0.6 0.4 0.2 0 540 80 560 (°C) 580 600 Wavelength 620 640 660 100 120 λ (nm) Radiation pattern IF – Ta (mA) 0 IF −20 Allowable forward current Relative luminous intensity IV IF = 20mA 80 60 40 20 0 0 20 40 60 Ambient temperature 7 80 Ta (°C) 2007-10-01 TL(RE,RME,SE,OE,YE,GE)28C(F) TLGE28C(F) IF – V F IV – IF 3000 IV (mcd) Ta = 25 °C 50 30 Luminous intensity Forward current IF (mA) 100 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 2.2 1000 100 10 2.3 1 100 Forward current IV – Tc (mA) IF Relative luminous intensity – Wavelength 1.0 Relative luminous intensity 5 3 1 0.5 0.3 20 Case temperature 40 Tc 60 80 Ta = 25 °C 0.6 0.4 0.2 540 560 580 Wavelength (°C) 600 620 640 100 120 λ (nm) Radiation pattern IF – Ta (mA) 0 IF −20 IF = 20mA 0.8 0 520 0.1 Allowable forward current IV 10 (V) 10 Relative luminous intensity Ta = 25 °C 80 60 40 20 0 0 20 40 60 Ambient temperature 8 80 Ta (°C) 2007-10-01 TL(RE,RME,SE,OE,YE,GE)28C(F) RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2007-10-01