TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP TOSHIBA InGaAℓP LED TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP Panel Circuit Indicator Unit: mm · 5 mm package · InGaAℓP technology · All plastic mold type · Transparent lens · Line-up: 3 colors (pure green, green, pure yellow) · High intensity light emission · Excellent low current light output · Stopper lead type is also available · Applications: traffic signals, safety equipment, etc. TLPGE23T, TLFGE23T, TLGE23T, TLPYE23T Line-up Product Name Color TLPGE23TP Pure Green TLFGE23TP Green TLGE23TP Green TLPYE23TP Pure Yellow Material InGaAlP JEDEC ― JEITA ― TOSHIBA ― Weight: 0.31 g Maximum Ratings (Ta = 25°C) Product Name Forward Current IF (mA) Reverse Voltage VR (V) Power Dissipation PD (mW) TLPGE23TP 50 4 120 TLFGE23TP 50 4 120 TLGE23TP 50 4 120 TLPYE23TP 50 4 120 1 Operating Temperature Topr (°C) Storage Temperature Tstg (°C) -40~100 -40~120 2002-01-18 TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP Electrical and Optical Characteristics (Ta = 25°C) Product Name Typ. Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR ld lP Dl IF Min Typ. IF Typ. Max IF Max VR TLPGE23TP 558 (562) 14 20 850 3000 20 2.1 2.4 20 50 4 TLFGE23TP 565 (568) 15 20 1530 5000 20 2.0 2.4 20 50 4 TLGE23TP 571 (574) 17 20 2720 7000 20 2.0 2.4 20 50 4 TLPYE23TP 580 (583) 14 20 2720 8000 20 2.0 2.4 20 50 4 mA mA V Unit nm mA mcd mA V Precautions · Please be careful of the following: Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 2 mm from the body of the device) · If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. · This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. 2 2002-01-18 TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP TLPGE23TP IF – VF IV – IF 100 10000 (mcd) Ta = 25°C 30 Luminous intensity IV Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 2.2 3000 1000 300 100 30 2.3 1 3 VF (V) 5 10 Forward current IV – Tc 30 50 100 IF (mA) Relative luminous intensity – Wavelength 10 1.0 Ta = 25°C Relative luminous intensity 3 1 0.5 0.3 0.1 -20 0 20 40 Case temperature Tc 60 0.8 0.6 0.4 0.2 0 520 80 540 560 Radiation pattern 20° 10° 0° 10° 40° 50° 50° 60° 60° 70° 70° 80° 80° 0.2 640 100 120 (nm) (mA) 20° 30° 0 620 IF – Ta 40° 90° 600 80 Ta = 25°C 30° 580 Wavelength l (°C) Allowable forward current IF Relative luminous intensity IV IF = 20 mA 5 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 80 Ambient temperature Ta (°C) 3 2002-01-18 TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP TLFGE23TP IF – VF IV – IF 100 30000 (mcd) 30 Luminous intensity IV Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 2.2 Ta = 25°C 10000 3000 1000 300 100 2.3 1 3 VF (V) 5 10 Forward current IV – Tc 30 50 100 IF (mA) Relative luminous intensity – Wavelength 10 1.0 Ta = 25°C Relative luminous intensity 3 1 0.5 0.3 0.1 -20 0 20 40 Case temperature Tc 60 0.8 0.6 0.4 0.2 0 520 80 540 560 Radiation pattern 20° 10° 0° 10° 40° 50° 50° 60° 60° 70° 70° 80° 80° 0.2 640 100 120 (nm) (mA) 20° 30° 0 620 IF – Ta 40° 90° 600 80 Ta = 25°C 30° 580 Wavelength l (°C) Allowable forward current IF Relative luminous intensity IV IF = 20 mA 5 0.4 0.6 0.8 60 40 20 0 0 90° 1.0 20 40 60 80 Ambient temperature Ta (°C) 4 2002-01-18 TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP TLGE23TP IF – VF IV – IF 30000 100 (mcd) 30 Luminous intensity IV Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 2.2 Ta = 25°C 10000 3000 1000 300 100 2.3 1 3 VF (V) 5 10 Forward current 30 50 100 IF (mA) Relative luminous intensity – Wavelength IV – Tc 1.0 10 Ta = 25°C Relative luminous intensity 3 1 0.5 0.3 0.1 -20 0 20 40 Case temperature Tc 60 0.8 0.6 0.4 0.2 0 520 80 540 560 Radiation pattern 20° 10° 0° 10° 40° 50° 50° 60° 60° 70° 70° 80° 80° 0.2 640 100 120 (nm) (mA) 20° 30° 0 620 IF – Ta 40° 90° 600 80 Ta = 25°C 30° 580 Wavelength l (°C) Allowable forward current IF Relative luminous intensity IV IF = 20 mA 5 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 80 Ambient temperature Ta (°C) 5 2002-01-18 TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP TLPYE23TP IF – VF IV – IF 100 30000 (mcd) 30 Luminous intensity IV Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 2.2 Ta = 25°C 10000 3000 1000 300 100 2.3 1 3 VF (V) 5 10 Forward current IV – Tc 30 50 100 IF (mA) Relative luminous intensity – Wavelength 10 1.0 Ta = 25°C Relative luminous intensity 3 1 0.5 0.3 0.1 -20 0 20 40 Case temperature Tc 60 0.8 0.6 0.4 0.2 0 540 80 560 580 Radiation pattern 20° 10° 0° 10° 40° 50° 50° 60° 60° 70° 70° 80° 80° 0.2 660 100 120 (nm) (mA) 20° 30° 0 640 IF – Ta 40° 90° 620 80 Ta = 25°C 30° 600 Wavelength l (°C) Allowable forward current IF Relative luminous intensity IV IF = 20 mA 5 0.4 0.6 0.8 60 40 20 0 0 90° 1.0 20 40 60 80 Ambient temperature Ta (°C) 6 2002-01-18 TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP RESTRICTIONS ON PRODUCT USE 000707EAC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 2002-01-18