TOSHIBA T6C25

T6C25
TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
T6C25
COLUMN AND ROW DRIVER FOR A DOT MATRIX LCD
The T6C25 is a 160-channel-output column and row driver for an STN
dot matrix LCD.
The T6C25 features a 42-V LCD drive voltage and an 8-MHz maximum
operating frequency. The T6C25 is able to drive LCD panels with a duty
ratio of up to 1 / 480.
FEATURES
l Display duty application
: to 1 / 480
l LCD drive signal
: 160
l Data transfer
: Column : 4 / 8-bit bidirectional
Row : Single / Dual bidirectional
l Operating frequency
: 8 MHz
l LCD drive voltage
: 14 to 42 V
l Power supply voltage
: 2.7 to 5.5 V
l Operating temperature
: −20 to 75°C
l LCD drive output resistance : 1.3 kΩ (max) (20 V, 1 / 13 bias)
l Display-off function
: When / DSPOF is L, all LCD drive outputs (O1 to O160) remain at the V5 level.
l Low power consumption
: Cascade connection and auto enable transfer functions are available.
l EI / LP input
: EI / LP Input enables LSI operation.
Connect EIO 1 / 2 from the 1st LSI to L.
000707EBE1
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
· Polyimide base film is hard and thin. Be careful not to injure yourself on the film or to scratch any other parts with the film. Try to
design and manufacture products so that there is no chance of users touching the film after assembly, or if they do , that there is no
chance of them injuring themselves. When cutting out the film, try to ensure that the film shavings do not cause accidents. After use,
treat the leftover film and reel spacers as industrial waste.
· Light striking a semiconductor device generates electromotive force due to photoelectric effects. In some cases this can cause the
device to malfunction.
This is especially true for devices in which the surface (back), or side of the chip is exposed. When designing circuits, make sure
that devices are protected against incident light from external sources. Exposure to light both during regular operation and during
inspection must be taken into account.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
· The information contained herein is subject to change without notice.
2000-12-05
1/11
T6C25
BLOCK DIAGRAM
2000-12-05
2/11
T6C25
PIN ASSIGNMENT
* : The above diagram shows the pin configuration of the LSI Chip, not that of the tape carrier package.
2000-12-05
3/11
T6C25
PIN FUNCTIONS
PIN NAME
I/O
O1 to O160
Output
EIO1, EIO4
I/O
FUNCTIONS
Output for LCD drive signal
(Column mode)
Input for data signal
Input
DIR
Input
(Direction)
Input for data flow direction select,
/ DSPOF
Input
(Display Off)
/ DSPOF = L : Display-off mode, (O1 to O160) remain at the V5 level.
/ DSPOF = H : Display-on mode, (O1 to O160) are operational.
DUAL
Input
Input
V0 to V5
Input / output for enable signal
DIR selects In or Out.
Connect EIO (IN) of 1st LSI to L.
For a cascade connection, connect EIO (OUT) to EIO (IN) of next LSI.
DI1 to DI8
DF
LEVEL
(Row mode)
Fix to H or L
(Column mode)
Input for data bit select
(Row mode)
Fix to H or L
(Column mode)
Fix to H or L
VDD to VSS
(Row mode)
Input for dual / single select
(Column mode)
Display data is latched on falling edges of LP.
LP
―
When EIO (IN) = L, setting SCP ·LP = H enables the 1st LSI.
(Row mode)
Input for shift clock pulse
FR
Input
(Frame)
Input for frame signal
(Column mode)
Input for shift clock pulse
SCP
Input
TEST
Input
(TEST)
Fix to L
S/C
Input
Input for mode select : H = Column mode, L = Row mode
VDD
―
Power supply for internal logic (+5.0 V)
VSS
―
Power supply for internal logic (0 V)
V5L·R
―
Power supply for LCD drive circuit
V3 / 4L·R
―
Power supply for LCD drive circuit
V2 / 1L·R
―
Power supply for LCD drive circuit
V0L·R
―
Power supply for LCD drive circuit
VCCL·R
―
Power supply for LCD drive circuit
(Row mode)
Fix to H or L
―
2000-12-05
4/11
T6C25
RELATION BETWEEN FR, DATA INPUT AND OUTPUT LEVEL
FR
DATA INPUT (DI1 to DI8)
/ DSPOF
OUTPUT LEVEL
(CULUMN MODE)
OUTPUT LEVEL
(ROW MODE)
L
L
H
V3
V4
L
H
H
V5
V0
H
L
H
V2
V1
H
H
H
V0
V5
*
*
L
V5
V5
*:
Don’t Care
DATA INPUT FORMAT
Column mode
DIR
DF
BIT MODE
H
ENABLE PIN
EIO1
EIO2
OUT
L
4-BIT
L
IN
H
H
OUT
OUT
IN
IN
OUT
8-BIT
L
*1 :
IN
(*1)
DI1
INPUT DATA LINE AND OUTPUT BUFFERS
DI2
DI3
DI4
DI5
DI6
DI7
DI8
O157
―
―
―
―
O2
O1
―
―
―
―
O3
O4
―
―
―
―
L
O160
O159
O158
F
O4
O3
L
O1
O2
F
O157
O158
O159
O160
―
―
―
―
L
O160
O159
O158
O157
O156
O155
O154
O153
F
O8
O7
O6
O5
O4
O3
O2
O1
L
O1
O2
O3
O4
O5
O6
O7
O8
F
O153
O154
O155
O156
O157
O158
O159
O160
L: Last Data
F: First Data
Row Mode
DATA INPUT TERMINALS
EIO2
EIO3
DUAL
DIR
DATA FLOW
L
L
O160 → O1
OUT
―
―
IN
L
H
O1 → O160
IN
―
―
OUT
H
L
O160 → O81
O80 → O1
OUT
IN
OUT
IN
H
H
O1 → O80
O81 → O160
IN
OUT
IN
OUT
EIO1
DIN
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TIMING DIAGRAM (Column mode)
6/11
T6C25
2000-12-05
T6C25
TIMING DIAGRAM (Row mode)
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T6C25
ABSOLUTE MAXIMUM RATINGS
(Ensure that the following conditions are maintained, VCC≥V0≥V2≥V3≥V5≥VSS)
ITEM
SYMBOL
PIN NAME
RATING
UNIT
Supply Voltage (1)
VDD
VDD
−0.3 to 7.0
V
Supply Voltage (2)
VCC
VCCL / R
− 0.3 to 45.0
V
Supply Voltage (3)
V0, V2
V0L / R, V2L / R
−0.3 to VCC + 0.3
V
Supply Voltage (4)
V3, V5
V3L / R, V5L / R
−0.3 to 7.0
V
Input Voltage
VIN
(*2)
−0.3 to VDD + 0.3
V
Operating Temperature
Topr
―
− 20 to 75
°C
Storage Temperature
Tstg
―
− 40 to 125
°C
*2 : SCP, FR, LP, DIR, DF, DUAL, S / C, EIO1 to 4, DI1 to 8, / DSPOF, TEST
ELECTRICAL CHARACTERISTICS
DC CHARACTERISTICS
(Unless otherwise noted, VSS = 0V, VDD = 2.7 to 5.5V, Ta = −20 to 75°C)
SYMBOL
TEST
CIRCUIT
TEST CONDITION
MIN
TYP.
MAX
Supply Voltage 1
VDD
―
―
2.7
5.0
5.5
VDD
Supply Voltage 2
VCC
―
―
14
―
42
VCCL / R
H Level
VIH
―
0.8
VDD
―
VDD
L Level
VIL
―
0
―
0.2
VDD
H Level
VOH
―
IOH = −0.4 mA
VDD
−0.5
―
VDD
L Level
VOL
―
IOL = 0.4 mA
0
―
1.3
H Level
ROH
―
VOUT = V0 − 0.5 V
(*3)
―
0.6
1.3
M Level
ROM
―
VOUT = V2 ± 0.5 V
(*3)
―
0.6
1.3
―
VOUT = V3 ± 0.5 V
(*3)
―
0.6
1.3
L Level
ROL
―
VOUT = V5 + 0.5 V
(*3)
―
0.6
1.3
―
VDD = 5.5 V
VCC = 42 V
fFR = 40 Hz
fscp = 8.0 MHz
Input Data : every bit inverted
VIH = 5.5 V, VIL = 0 V
―
―
3.0
ITEM
Input
Voltage
Output
Voltage
Output
Resistance
Current
Consumption (*4)
IDD
(*2)
UNIT
V
PIN NAME
SCP, FR, LP,
DIR, DF, DUAL
S / C, EIO1 to 4,
DI1 to 8,
/ DSPOF, TEST,
EIO1, to 4
kΩ
O1 to O160
mA
VDD
*3 : VCC = 20 V, 1 / 13 bias
*4 : Current consumption while the internal data receiver is operating.
2000-12-05
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T6C25
AC ELECTRICAL CHARACTERISTICS (Column Mode)
TEST CONDITIONS (1) (VSS = 0 V, VDD = 4.5 to 5.5 V, VCC = 14 to 42 V, Ta = −20 to 75°C)
ITEM
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
tC
―
125
―
ns
tCWH, tCWL
―
50
―
ns
Data Set-up Time
tDSU
―
50
―
ns
Data Hold Time
tDHD
―
50
―
ns
SCP Rise / Fall Time
tr, tf
―
―
(*5)
ns
LP Rise Time
tLRP
―
50
―
ns
LP Fall Time
tLFP
―
50
―
ns
LP Pulse Width
tLW
―
45
―
ns
SCP-to-LP Delay Time
tSL
―
40
―
ns
LP-to-SCP Delay Time
tLS
―
40
―
ns
EIO-In Fall Time
tEIFP
―
40
―
ns
EIO-In Pulse Width
tEIW
―
40
―
ns
SCP-to-EIO Delay Time
tSE
―
20
―
ns
tEOD
(*6)
―
80
ns
Clock Cycle
SCP Pulse Width
EIO-Out Delay Time
*5 : tr, tf≤ (tC − tCWH − tCWL) / 2 and tr, tf≤50 ns
*6 : CL = 30 pF
2000-12-05
9/11
T6C25
TEST CONDITIONS (2) (VSS = 0 V, VDD = 2.7 to 4.5 V, VCC = 14 to 42 V, Ta = −20 to 75°C)
ITEM
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
tC
―
500
―
ns
SCP Pulse Width
tCWH, tCWL
―
240
―
ns
Data Set-up Time
tDSU
―
240
―
ns
Data Hold Time
tDHD
―
240
―
ns
SCP Rise / Fall Time
tr, tf
―
―
(*5)
ns
LP Rise Time
tLRP
―
240
―
ns
LP Fall Time
tLFP
―
240
―
ns
LP Pulse Width
tLW
―
240
―
ns
SCP-to-LP Delay Time
tSL
―
50
―
ns
Clock Cycle
LP-to-SCP Delay Time
tLS
―
100
―
ns
EIO-In Fall Time
tEIFP
―
240
―
ns
EIO-In Pulse Width
tEIW
―
240
―
ns
SCP-to-EIO Delay Time
tSE
―
50
―
ns
tEOD
(*6)
―
260
ns
EIO-Out Delay Time
*5 : tr, tf≤ (tC − tCWH − tCWL) / 2 and tr, tf≤50 ns
*6 : CL = 30 pF
2000-12-05
10/11
T6C25
AC ELECTRICAL CHARACTERISTICS (Row mode)
TEST CONDITIONS (1) (VSS = 0 V, VDD = 4.5 to 5.5 V, VCC = 14 to 42 V, Ta = −20 to 75°C)
ITEM
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
LP Pulse Width H
tCWH
LP
30
―
ns
LP Pulse Width L
tCWL
LP
195
―
ns
SCP Rise / Fall Time
tr , tf
LP, FR, EIO1 to 4
―
20
ns
Data Set-up Time
tDSU
EIO1 to 4
80
―
ns
Data Hold Time
tDHD
EIO1 to 4
0
―
ns
EIO-Out Delay Time A (*7)
tpdA
EIO1 to 4
5
―
ns
EIO-Out Delay Time B (*7)
tpdB
EIO1 to 4
―
150
ns
TEST CONDITIONS (2) (VSS = 0 V, VDD = 2.7 to 5.5 V, VCC = 14 to 42 V, Ta = −20 to 75°C)
ITEM
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
LP Pulse Width H
tCWH
LP
100
―
ns
LP Pulse Width L
tCWL
LP
400
―
ns
SCP Rise / Fall Time
tr , tf
LP, FR, EIO1 to 4
―
20
ns
Data Set-up Time
tDSU
EIO1 to 4
130
―
ns
Data Hold Time
tDHD
EIO1 to 4
0
―
ns
EIO-Out Delay Time A (*7)
tpdA
EIO1 to 4
5
―
ns
EIO-Out Delay Time B (*7)
tpdB
EIO1 to 4
―
400
ns
*7 :
CL = 30 pF
Note : Insert the bypass capacitor (0.1µF) between VDD and VSS to decrease power supply noise.
Place the bypass capacitor as close to the LSI as possible.
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