TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8102 Lithium-Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm z Small footprint due to a small and slim package z Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) z High forward transfer admittance: |Yfs| = 17 S (typ.) z Low leakage current: IDSS = −10 μA (max.) (VDS = −20 V) z Enhancement mode: Vth = −0.5~−1.2 V (VDS = −10 V, ID = −200 μA) Absolute Maximum Ratings (Ta = 25°C) Characteristics JEDEC ― JEITA ― Symbol Rating Unit Drain-source voltage VDSS −20 V TOSHIBA Drain-gate voltage (RGS = 20 kΩ) VDGR −20 V Weight: 0.035 g (typ.) Gate-source voltage VGSS ±12 V DC (Note 1) ID −6 Pulse (Note 1) IDP −24 Drain power dissipation (t = 10 s) (Note 2a) PD 1.5 W Drain power dissipation (t = 10 s) (Note 2b) PD 0.6 W Single-pulse avalanche energy (Note 3) EAS 46.8 mJ Avalanche current IAR −6 A Repetitive avalanche energy (Note 2a, Note 4) EAR 0.15 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current A 2-3R1B Circuit Configuration Note: For Notes 1 to 5, see the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-16 TPCS8102 Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 83.3 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 208 °C/W Marking (Note 5) Part No. (or abbreviation code) S8102 Lot No. (weekly code) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) Note 3: VDD = −16 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = −6.0 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: ○ on the lower right of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (“01” for the first week of the year, continuing up to “52” or “53”) Year of manufacture (the last digit of the calendar year) 2 2006-11-16 TPCS8102 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min. Typ. Max. Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-off current IDSS VDS = −20 V, VGS = 0 V ⎯ ⎯ −10 μA V (BR) DSS ID = −10 mA, VGS = 0 V −20 ⎯ ⎯ V (BR) DSX ID = −10 mA, VGS = 12 V −8 ⎯ ⎯ −0.5 ⎯ −1.2 Drain-source breakdown voltage Gate threshold voltage Vth VDS = −10 V, ID = −200 μA V V RDS (ON) VGS = −2.0 V, ID = −3 A ⎯ 30 60 RDS (ON) VGS = −2.5 V, ID = −3 A ⎯ 23 38 RDS (ON) VGS = −4 V, ID = −3 A ⎯ 16 20 Forward transfer admittance |Yfs| VDS = −10 V, ID = −3 A 8.5 17 ⎯ S Input capacitance Ciss ⎯ 2740 ⎯ pF Reverse transfer capacitance Crss ⎯ 780 ⎯ pF Output capacitance Coss ⎯ 1030 ⎯ pF ⎯ 7.6 ⎯ ⎯ 16 ⎯ Rise time VDS = −10 V, VGS = 0 V, f = 1 MHz tr VGS ID = −3 A VOUT −5 V ton 4.7 Ω Turn-on time 0V Switching time Fall time RL = 3.3 Ω Drain-source ON resistance tf mΩ ns ⎯ 110 ⎯ ⎯ 230 ⎯ ⎯ 37 ⎯ nC ⎯ 27 ⎯ nC ⎯ 10 ⎯ nC VDD ∼ − −10 V Turn-off time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd Duty < = 1%, tw = 10 μs VDD ≈ −16 V, VGS = −5 V, ID = −6 A Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Pulse (Note 1) Forward voltage (diode) Symbol Test Condition Min. Typ. Max. Unit IDRP — — — −24 A — — 1.2 V VDSF IDR = −6 A, VGS = 0 V 3 2006-11-16 TPCS8102 4 2006-11-16 TPCS8102 5 2006-11-16 TPCS8102 rth − tw 500 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (°C/W) 300 100 (1) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a) (2) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (2) (1) 50 30 10 5 3 1 0.5 0.3 SINGLE PULSE 0.1 1m 10 m 100 m 1 PULSE WIDTH 10 100 1000 tw (s) −100 (A) ID max. (pulse)* 1 ms* −10 Drain current ID 10 ms* −1 −0.1 *: Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. −0.01 −0. 01 −0.1 VDSS max −1 Drain−source voltage −10 VDS −100 (V) 6 2006-11-16 TPCS8102 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-11-16