TPCP8103-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra High speed U-MOSIII) TPCP8103-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications • Small footprint due to a small and thin package • High speed switching Unit: mm 0.33±0.05 0.05 M A 5 0.475 1 4 B 0.65 0.05 M B 2.9±0.1 • Small gate charge: QSW = 6.5 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 31 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = -40V) • Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1mA) A 0.8±0.05 0.025 S S 0.28 +0.1 -0.11 0.17±0.02 +0.13 1.12 -0.12 1.12 +0.13 -0.12 Absolute Maximum Ratings (Ta = 25°C) Characteristic 1．Source 0.28 +0.1 -0.11 5．Drain 2．Source 6．Drain 3．Source 7．Drain 4．Gate 8．Drain Symbol Rating Unit Drain-source voltage VDSS -40 V JEDEC ― Drain-gate voltage (RGS = 20 kΩ) VDGR -40 V JEITA ― Gate-source voltage VGSS ±20 V TOSHIBA (Note 1) ID -4.8 IDP -19.2 A Weight: 0.017 g (typ.) Pulsed (Note 1) PD 1.68 W PD 0.84 W EAS 10.7 mJ IAR -4.8 A EAR 0.09 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current Drain power dissipation (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) 2.8±0.1 2.4±0.1 8 Circuit Configuration 8 7 6 5 1 2 3 4 8 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 2-3V1K 7 6 5 8103H ※ 1 2 3 4 Lot No. 1 2007-06-22 TPCP8103-H Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Max Unit Rth (ch-a) 74.4 °C/W Rth (ch-a) 148.8 °C/W Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = -24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = -4.8A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2007-06-22 TPCP8103-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS VDS = -40 V, VGS = 0 V ⎯ ⎯ -10 μA V (BR) DSS ID = -10 mA, VGS = 0 V -40 ⎯ ⎯ V (BR) DSX ID = -10 mA, VGS = −20 V -20 ⎯ ⎯ VDS = -10 V, ID = -1 mA -0.8 ⎯ -2.0 VGS = -4.5 V, ID = -2.4 A ⎯ 42 54 VGS = -10 V, ID = -2.4 A ⎯ 31 40 VDS = -10 V, ID = -2.4 A 5 10 ⎯ ⎯ 800 ⎯ ⎯ 115 ⎯ ⎯ 165 ⎯ ⎯ 6.5 ⎯ ⎯ 12.5 ⎯ Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time tr ton Switching time Fall time tf Turn-off time ID =−2.4A 出力 VGS −10 V 4.7 Ω Turn-on time VDS = -10 V, VGS = 0 V, f = 1 MHz RL =8.33Ω Drain-source breakdown voltage Qg Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd Gate switch charge QSW V mΩ S pF ns ⎯ 9 ⎯ ⎯ 37 ⎯ VDD ∼ − -32 V, VGS = -10 V, ID = -4.8 A ⎯ 19 ⎯ VDD ∼ − -32 V, VGS = -5 V, ID = -4.8 A ⎯ 11 ⎯ ⎯ 1.5 ⎯ ⎯ 5.5 ⎯ ⎯ 6.5 ⎯ Test Condition Min Typ. Max Unit ⎯ ⎯ ⎯ -19.2 A ⎯ ⎯ 1.2 V VDD ∼ − −20 V Duty < = 1%, tw = 10 μs toff Total gate charge (gate-source plus gate-drain) V VDD ∼ − -32 V, VGS = -10 V, ID = -4.8 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse Symbol (Note 1) IDRP VDSF IDR = −4.8 A, VGS = 0 V 3 2007-06-22 TPCP8103-H RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2007-06-22