TOSHIBA 2SA1315_07

2SA1315
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1315
Power Amplifier Applications
Power Switching Applications
Unit: mm
•
Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)
•
High-speed switching time: tstg = 1.0 μs (typ.)
•
Complementary to 2SC3328
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−80
V
Collector-emitter voltage
VCEO
−80
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−2
A
Base current
IB
−1
A
Collector power dissipation
PC
900
mW
Junction temperature
Tj
150
°C
JEDEC
Tstg
−55 to 150
°C
JEITA
Storage temperature range
TO-92MOD
―
TOSHIBA
2-5J1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.36 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09
2SA1315
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −80 V, IE = 0
―
―
−1.0
μA
Emitter cut-off current
IEBO
VEB = −5 V, IC = 0
―
―
−1.0
μA
V (BR) CEO
IC = −10 mA, IB = 0
−80
―
―
V
VCE = −2 V, IC = −0.5 A
70
―
240
hFE (2)
VCE = −2 V, IB = −1.5 A
40
―
―
Collector-emitter saturation voltage
VCE (sat)
IC = −1 A, IB = −0.05 A
―
−0.2
−0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = −1 A, IB = −0.05 A
―
−0.9
−1.2
V
fT
VCE = −2 V, IC = −0.5 A
―
80
―
MHz
VCB = −10 V, IE = 0, f = 1 MHz
―
45
―
pF
―
0.2
―
―
1.0
―
―
0.2
―
hFE (1)
DC current gain
(Note)
Transition frequency
Collector output capacitance
Cob
Turn-on time
ton
Storage time
tstg
IB1
Switching time
Input
IB2
20 μs
IB1
IB2
Output
30 Ω
Collector-emitter breakdown voltage
μs
VCC = −30 V
Fall time
tf
−IB1 = IB2 = 0.05 A, duty cycle ≤ 1%
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
A1315
Part No. (or abbreviation code)
Lot No.
Characteristics
indicator
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-09
2SA1315
IC – VCE
−30
−15
Common emitter
−1.6
−10
Collector-emitter voltage
(A)
−20
Collector current IC
VCE – IC
−1
VCE (V)
−2.0
−1.2
IB = −5 mA
−0.8
Common emitter
−0.4
Ta = 25°C
Ta = 25°C
−0.8
IB = −5 mA −10
−2
−4
−6
−8
Collector-emitter voltage
−10
−30 −50 −70
−0.6
−100
−0.4
−0.2
0
0
0
−20
0
0
−12
−0.4
VCE (V)
−0.8
−1.2
−1.6
Collector current IC
VCE – IC
(A)
−1
Common emitter
VCE (V)
Common emitter
Ta = 100°C
−0.8
IB = −5 mA −10
−20
−30
−50 −70
Collector-emitter voltage
VCE (V)
−2.4
VCE – IC
−1
−0.6
−100
−0.4
−0.2
−0.8
IB = −5 mA
Ta = −55°C
−15
−10
−20 −30 −40
−50 −70
−0.6
−100
−0.4
−0.2
)
Collector-emitter voltage
−2.0
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
Collector current IC
0
0
−2.4
(A)
DC current gain hFE
300
VCE = −2 V
Ta = 100°C
25
100
−55
50
30
−0.3
Collector current IC
Collector-emitter saturation voltage
VCE (sat) (V)
Common emitter
−0.1
−1.2
−1.6
−2.0
−2.4
(A)
VCE (sat) – IC
500
−0.03
−0.8
Collector current IC
hFE – IC
10
−0.01
−0.4
−0.5
Common emitter
IC/IB = 20
−0.3
Ta = 100°C
−0.1
25
−0.05
−0.01
−0.01
−1
(A)
−55
−0.03
−0.03
−0.1
−0.3
Collector current IC
3
−1
(A)
2006-11-09
2SA1315
IC – VBE
−2.0
Common emitter
Common emitter
VCE = −2 V
IC/IB = 20
−0.5
(A)
Ta = −55°C
−1
Collector current IC
Base-emitter saturation voltage
VBE (sat) (V)
VBE (sat) – IC
−3
25
100
−0.3
−0.1
−0.01
−0.03
−0.1
−0.3
Collector current IC
−1
−1.6
−1.2
Ta = 100°C
−0.8
25
−55
−0.4
(A)
0
0
−0.2
−0.4
−0.6
−0.8
Base-emitter voltage
IC max (pulsed)*
1 ms*
IC max (continuous)
10 ms*
Collector power dissipation PC
Collector current IC
(A)
−1
100 ms*
−0.5
1 s*
−0.3
DC operation
Ta = 25°C
−0.1
−0.05
−0.03
*: Single nonrepetitive pulse
Ta = 25°C
−0.01 Curves must be derated
linearly with increase in
−0.005 temperature.
−0.003
−0.3
−1
−1.6
240
280
VBE (V)
1200
(mW)
−3
−1.2
PC – Ta
Safe Operating Area
−5
−1.0
−3
−30
800
600
400
200
0
0
VCEO max
−10
1000
40
80
120
160
200
Ambient temperature Ta (°C)
−100
Collector-emitter voltage VCE (V)
4
2006-11-09
2SA1315
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2006-11-09