TLN108(F) TOSHIBA Infrared LED GaAs Infrared Emitter TLN108(F) Lead(Pb)-Free Opto−Electronic Switches Tape And Card Readers Equipment Using Infrared Transmission Unit: mm • TO−18 metal package • High radiant intensity: IE = 20 mW/sr (typ.) • Excellent radiant−intensity linearity. Modulation by pulse operation and high frequency is possible. • Highly reliable due to hermetic seal Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 100 mA ΔIF / °C −1 mA / °C IFP 1 A TOSHIBA Weight: 0.33 g (typ.) Forward current Forward current derating (Ta > 25°C) Pulse forward current (Note 1) Reverse voltage VR 5 V Operating temperature range Topr −40~125 °C Storage temperature range Tstg −55~150 °C 4−5Q2 Pin Connection Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 1. 2. 2 Anode Cathode (case) Note 1: Pulse width ≦100μs, repetitive frequency = 100 Hz Markings Product No. (TL omitted) Monthly lot number N108 ･ Letter color：Red Month of manufacture (January to December denoted by letters A to L respectively) Year of manufacture (last digit of year of manufacture) 1 2007-10-01 TLN108(F) Optical And Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 50 mA ― 1.3 1.4 V Pulse forward voltage VFP IFP = 1 A ― 2.4 ― V IR VR = 5 V ― ― 10 μA Radiant intensity IE IF = 50 mA 10 20 ― mW / sr Radiant power PO IF = 50 mA ― 3 ― mW Capacitance CT VR = 0, f = 1 MHz ― 30 ― pF Peak emission wavelength λP IF = 50 mA ― 940 ― nm Spectral line half width Δλ IF = 50 mA ― 50 ― nm IF = 50 mA ― ±8 ― ° Reverse current Half value angle θ 1 2 Precautions Please be careful of the followings. 1. Soldering temperature: 260°C max Soldering time: 5s max (Soldering must be performed 1.5m from the bottom of the package.) 2. When forming the leads, bend each lead under the 2mm from the body of the device. Soldering must be performed after the leads have been formed. 3. Radiant intensity falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in radiant power over time. The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 : 1. I E (t) PO (t) = I E (0) PO (0) 2 2007-10-01 TLN108(F) IFP – VFP 1000 100 500 60 40 20 0 0 (typ.) 300 80 Pulse forward current IFP (mA) Allowable forward current IF (mA) IF – Ta 120 20 60 40 100 80 120 140 160 Ambient temperature Ta (°C) IF – V F 100 50 30 10 5 (typ.) 100 Pulse width ≦ 100μs Repetitive frequency = 100Hz Ta = 25°C 3 50 1 1.0 1.2 1.6 1.4 1.8 2.0 2.2 2.4 Forward current IF (mA) 30 Pulse forward voltage Ta = 100°C 75 50 25 10 0 -30 5 IE – IF 3 300 100 1.1 1.2 1.3 Forward voltage VF 1.4 Pulse width ≦ 100μs Repetitive frequency = 100Hz Ta = 25°C Pulse 50 (V) Wavelength Characteristic 1.0 (typ.) 1.5 (mW / sr) 1.0 (typ.) IF = 50mA Radiant intensity IE 1 0.9 Ta = 25°C 0.8 Relative intensity VFP (V) 0.6 30 10 5 3 DC 1 0.4 0.5 0.3 0.2 0 900 920 940 960 980 1000 0.1 1 1020 Wavelength λ (nm) 3 10 30 Forward current IF 3 100 300 1000 (mA) 2007-10-01 TLN108(F) Radiation Pattern Relative IE – Ta (typ.) (typ.) 10 (Ta = 25°C) 20° 0° 10° 10° Relative radiant intensity 5 20° 30° 30° 40° 40° 50° 50° 60° 60° 70° 70° 3 1 0.5 0.3 80° 80° 90° 0 0.4 0.2 0.6 0.8 90° 1.0 0.1 -40 -20 Relative intensity 0 40 20 80 60 Coupling Characteristics With TPS601A(F) 3000 100 Ta = 25°C Ta = 25°C 50 500 30 IE = 42mW / sr f = 100Hz 300 23 10kHz 2kHz 5kHz 50 500Hz 1kHz 200Hz 30 10 3μ 10μ 30μ 100μ Pulse width 300μ PW 1m 3m 10m (s) (mA) 11.7 100 10 Collector current IC (mA) 1000 IFP 140 Ambient temperature Ta (°C) IFP – PW Allowable pulse forward current 120 100 5 3 1 0.5 TPS601A(F)･･･IL = 226μA at VCE = 3V E = 0.1mW / cm2 0.3 d 0.1 1 3 5 Distance 4 10 30 50 100 d (ｍｍ) 2007-10-01 TLN108(F) RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-10-01