TOSHIBA TLN233

TLN233(F)
TOSHIBA Infrared LED
GaAℓAs Infrared Emitter
TLN233(F)
Lead(Pb)-Free
Infrared LED for Space-Optical-Transmission
•
High radiant intensity: 80 mW/sr (typ.) at IF = 50 mA
•
Half-angle value: θ1/2 = ±13° (typ.)
•
A light source for remote control
•
Wireless AV-signal transmission purposes
•
High-speed data transmission purposes
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Forward current
IF
100
mA
Pulse forward current
IFP
1000
(Note 1)
mA
Power dissipation
PD
200
mW
Reverse voltage
VR
4
V
Operating temperature range
Topr
−25~85
°C
Storage temperature range
Tstg
−30~100
°C
Soldering temperature (5 s), (Note 2)
Tsol
260
°C
TOSHIBA
4-5V3
Weight: 0.3 g (typ.)
Pin Connection
Note: Using continuously under heavy loads (e.g. the application of high
1. Anode
1
2
2. Cathode
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: f = 100 kHz, duty = 1%
Note 2: Soldering must be performed under the stopper.
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TLN233(F)
Optical and Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 100 mA
⎯
1.6
2.0
V
Reverse current
IR
VR = 4 V
⎯
⎯
60
μA
Radiant intensity
IE
IF = 50 mA
46
80
⎯
mW/sr
Radiant power
PO
IF = 50 mA
⎯
30
⎯
mW
⎯
15
⎯
MHz
Cut-off frequency
fc
IF = 50 mA + 5 mAP-P
Peak emission wavelength
λP
IF = 50 mA
⎯
870
⎯
nm
1
2
IF = 50 mA
⎯
±13
⎯
°
Half-angle value
θ
(Note 3)
Note 3: This is the frequency when modulation light power decreases by 3 dB from 1 MHz.
Handling Precautions
•
Soldering must be performed under the stopper.
•
When forming the leads, bend each lead at least 5 mm from the package body. Soldering must be performed
after the leads have been formed.
•
The radiant intensity decreases over time due to current flowing in the infrared LED. When designing circuits,
take into account the change in radiant intensity over time. The change in radiant intensity is equal to the
reciprocal of the change in LED infrared optical output:
IE (t) P o (t)
.
=
IE (0) P o (0)
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TLN233(F)
IF – Ta
IF – V F
75°C
(mA)
100
80
60
40
−25°C
10
1
85°C
0°C
Ta = 25°C
50°C
0.1
20
0
0
20
40
60
80
0.01
0.8
100
1
1.2
Ambient temperature Ta (°C)
VF – Ta
1.6
1.8
2
(V)
IFP – VFP
(typ.)
(typ.)
1000
Pulse forward current IFP (mA)
1.7
(V)
1.4
Forward voltage VF
1.8
Forward voltage VF
(typ.)
100
Forward current IF
Allowable forward current
IF (mA)
120
100 mA
1.6
70 mA
1.5
50 mA
1.4
30 mA
1.3
IF = 10 mA
1.2
1.1
300
100
30
10
Pulse width <
= 100 μs
3
Repetitive frequency = 100 Hz
Ta = 25°C
1
−50
−25
0
25
50
75
1
0
100
Ambient temperature Ta (°C)
1
IFP – Pw
VFP (V)
Pulse width = 1 ms
1.0
Relative radiant intensity
Allowable pulse forward current IFP (mA)
5
Relative IE – IFP
3000
f = 100 Hz
1000
200 Hz
500 Hz
1 kHz
2 kHz
5 kHz
10 kHz
Duty = 10%
Ta = 25°C
0.8
0.6
0.4
0.2
30
10
1
4
1.2
Ta = 25°C
100
3
Pulse forward voltage
10000
300
2
10
100
Pulse width
1000
Pw
0
0
10000
(μs)
200
400
600
800
1000
1200
Pulse forward current IFP (mA)
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TLN233(F)
Wavelength characteristic
Relative IE – Ta
1
(typ.)
10
IF = 50 mA
IF = 50 mA
Relative radiant intensity
Relative power intensity
0.8
0.6
0.4
0.2
0
700
740
780
820
860
900
940
3
1
0.3
0.1
−50
980
Wavelength λ (nm)
−25
0
25
50
75
100
Ambient temperature Ta (°C)
Radiation pattern
(typ.)
Ta = 25°C
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
80°
0
0.2
0.4
0.6
0.8
90°
1.0
Relative radiant power
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TLN233(F)
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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